Abstract: An active matrix LED array precursor forming a precursor to a micro LED array is provided. The active matrix LED array precursor comprises a common first semiconducting layer comprising a substantially undoped Group III-nitride, a plurality of transistor-driven LED precursors, and a common source contact. Each transistor-driven LED precursor comprises a monolithic light emitting diode (LED) structure comprising a plurality of III-nitride semiconducting layers, a barrier semiconducting layer, and a gate contact. Each monolithic LED structure is formed on a portion of the common semiconducting layer. The barrier semiconducting is layer formed on a portion of the common semiconducting layer encircling the LED structure and configured to induce a two-dimensional electron channel layer at the interface between the common semiconducting layer and the barrier semiconducting layer. The gate contact is formed over a portion of the two-dimensional electron channel layer, the gate contact encircling the LED structure.

Abstract: A light source includes a substrate, an array of semiconductor structures grown on the substrate, and multi-color micro-LEDs grown on surfaces of the array of semiconductor structures. Each semiconductor structure of the array of semiconductor structures has a shape of a truncated pyramid. The light source includes multiple sets of micro-LEDs formed on top surfaces of multiple sets of semiconductor structures of the array of semiconductor structures, or formed on the top surfaces and/or multiple sidewall surfaces of the array of semiconductor structures. The multiple sets of micro-LEDs are configured to emit light of multiple colors.

Abstract: A method of manufacturing a light emitting diode array comprising a first layer having a plurality of light emitting diodes arranged to emit light from a light emitting surface of the first layer, the method comprising: depositing a layer of dielectric material over the light emitting surface of the first layer; forming a plurality of apertures extending through the layer of dielectric material, each aperture having an internal surface that is at least partially reflective, wherein at least one aperture of the plurality of apertures is centered on and aligned with a light emitting diode of the plurality of light emitting diodes of the first layer, such that light emitted from light emitting diode is collimated as it passes through the at least one aperture.

Abstract: An LED backlight for use with a display panel, the backlight comprising a monolithic LED array having a surface and comprising a plurality of LEDs for emitting light from the surface of the array; a monolithic collimator array comprising a plurality of collimating channels, and being aligned so that each of the collimating channels is aligned with one or more of the plurality of LEDs, wherein the collimating channels are configured to collimate emitted light emitted from the LEDs to angles in the range of about +/?50° from a line substantially normal to the surface of the LED array; a microlens array for focusing the collimated light to infinity, the microlens array comprising a plurality of lenslets, each lenslet aligned with a collimating channel of the monolithic collimator array; and a relay lens for focusing the light from the microlens array on a display panel.

Abstract: A light emitting diode structure comprising: a p-type region; an n-type region; a gate contact; a first light emitting region for recombination of carriers injectable by the p-type region and the n-type region; and a second light emitting region for recombination of carriers injectable by the p-type region and the n-type region, wherein the first light emitting region and the second light emitting region at least partially overlap to form a light emitting surface associated with the first light emitting region and the second light emitting region; wherein the p-type region is at least partially formed in a first channel through the first light emitting region and the second light emitting region, and the n-type region is at least partially formed in a second channel through the first light emitting region and the second light emitting region, wherein the light emitting device is configured such that the wavelength of light emitted by the light emitting surface is controllable by varying a gate voltage applied

Abstract: A light source includes an array of micro-light emitting diodes (micro-LEDs), an array of micro-lenses, and a bonding layer bonding the array of micro-lenses to the array of micro-LEDs. Each micro-LED of the array of micro-LEDs includes a first mesa structure formed in a plurality of semiconductor layers. The array of micro-lenses is bonded to a first semiconductor layer of the plurality of semiconductor layers by the bonding layer. The first semiconductor layer includes an array of second mesa structures formed therein. The first mesa structure and the second mesa structure are on opposite sides of the plurality of semiconductor layers. Each second mesa structure of the array of second mesa structures is aligned with a respective micro-lens of the array of micro-lenses and the first mesa structure of a respective micro-LED of the array of micro-LEDs.

Abstract: A method of forming a light emitting diode array comprising a plurality of light emitting pixels, wherein at least one of the light emitting pixels comprises: a light emitting diode configured to emit light of a first primary peak wavelength; a first region comprising a first down conversion material configured to receive and convert input light of the first primary peak wavelength from the light emitting diode to provide output light of a second primary peak wavelength and unconverted light of the first primary peak wavelength; and a second region comprising organic semiconductor material dispersed in a medium, the organic semiconductor material configured to absorb input light of the first primary peak wavelength, wherein the second region is configured to transmit output light of the second primary peak wavelength from the first region and absorb unconverted light of the first primary peak wavelength passing from the light emitting diode through the second region, thereby to increase the light colour purit

Abstract: A light source includes an array of core-shell nanowire micro-LEDs. Each core-shell nanowire micro-LED includes: a first semiconductor epitaxial layer including a nanowire core formed therein; a first dielectric material layer in physical contact with and surrounding sidewalls of a bottom portion of the nanowire core, or in physical contact with a bottom surface of the nanowire core; a second dielectric material layer in physical contact with a top surface of the nanowire core; active layers grown only on sidewalls of the nanowire core and configured to emit visible light; and a second semiconductor layer grown on the active layers, where the nanowire core and the second semiconductor layer are oppositely doped.

Abstract: A method of forming a multicolour light emitting array, the method comprising: providing a first light emitting device configured to emit light with a first primary peak wavelength and a second light emitting device configured to emit light with the first primary peak wavelength; forming a colour conversion region at least partially associated with the first light emitting device and the second light emitting device, wherein the colour conversion region is configured to absorb light with the first primary peak wavelength and emit light with a second primary peak wavelength longer than the first primary peak wavelength; and photo-bleaching a portion of the colour conversion region associated with the first light emitting device such that the colour conversion region associated with the first light emitting device is at least partially transparent to light with the first primary peak wavelength, thereby to enable light with the first primary peak wavelength to be emitted by a first pixel associated with the fir

Abstract: A light source includes a backplane including electrical circuits fabricated thereon, an array of micro-light emitting diodes (micro-LEDs) bonded to the backplane and configured to emit visible light, and an array of micro-lenses aligned with the array of micro-LEDs and configured to collimate the visible light emitted by the array of micro-LEDs. Each micro-lens of the array of micro-lenses has a plurality of discrete thickness levels. A pitch of the array of micro-lenses is equal to or less than about 5 ?m, such as about 2 ?m. The pitch of the array of micro-lenses can be the same as or different from the pitch of the array of micro-LEDs.

Abstract: A light source includes an array of micro-light emitting diodes (micro-LEDs), an array of micro-lenses, and a bonding layer bonding the array of micro-lenses to the array of micro-LEDs. Each micro-LED of the array of micro-LEDs includes a first mesa structure formed in a plurality of semiconductor layers. The array of micro-lenses is bonded to a first semiconductor layer of the plurality of semiconductor layers by the bonding layer. The first semiconductor layer includes an array of second mesa structures formed therein. The first mesa structure and the second mesa structure are on opposite sides of the plurality of semiconductor layers. Each second mesa structure of the array of second mesa structures is aligned with a respective micro-lens of the array of micro-lenses and the first mesa structure of a respective micro-LED of the array of micro-LEDs.

Abstract: A method of forming a light emitting structure, the light emitting structure comprising: a light emitting layer configured to emit light having a primary peak wavelength; a partially reflective layer; a reflective layer; and a colour conversion layer, wherein the light emitting layer is positioned at least partially between the partially reflective layer and the reflective layer and the colour conversion layer is positioned at least partially between the light emitting layer and the partially reflective layer, wherein the partially reflective layer is configured to reflect light within a predetermined range of wavelengths and transmit light outside the predetermined range of wavelengths and wherein the primary peak wavelength is within the predetermined range of wavelengths.

Abstract: A light source includes an array of micro-light emitting diodes (micro-LEDs) configured to emit light, a first semiconductor layer on the array of micro-LEDs and including porous structures formed therein to diffuse the light emitted by the array of micro-LEDs, and a second semiconductor layer on the first semiconductor layer. The second semiconductor layer includes a flat surface opposing the first semiconductor layer and is configured to couple the light diffused by the porous structures out of the light source through the flat surface.

Abstract: A light source comprises a backplane wafer with electrical circuits fabricated thereon, and an array of LEDs coupled to the backplane wafer. Each LED of the array of LEDs comprises a mesa structure including semiconductor epitaxial layers and characterized by inwardly tilted mesa sidewalls, a high-refractive index material region (e.g., with a refractive index greater than about 1.75, such as equal to or greater than a refractive index of the semiconductor epitaxial layers) surrounding the semiconductor epitaxial layers of the mesa structure and including outwardly tilted sidewalls, and a reflective layer on the outwardly tilted sidewalls of the high-refractive index material region. In one example, each LED of the array of LEDs also include a passivation layer on the inwardly tilted mesa sidewalls of the mesa structure.

Abstract: A pixel comprising a first sub-pixel. The first sub-pixel comprises an LED layer comprising a light-emitting material configured to emit pump light having a pump wavelength. A container layer has a container surface comprising a first container aperture that defines a first container volume extending through the container layer. A first colour converting layer provided in the first container volume is configured to receive pump light from the LED layer and emit first converted light of a first converted wavelength. A first lens is provided on the container layer over the first container aperture, having an outer side that comprises a first convex surface. A first reflector conforming to the first convex surface comprises a first reflector configured to reflect light at the pump wavelength and transmit light at the first converted wavelength; and a second reflector configured to reflect light at both the pump wavelength and the first converted wavelength.

Abstract: A method of manufacturing a LED precursor and a LED precursor is provided. The LED precursor is manufactured by forming a monolithic growth stack having a growth surface and forming a monolithic LED stack on the growth surface. The monolithic growth stack comprises a first semiconducting layer comprising a Group III-nitride, a second semiconducting layer, and third semi-conducting layer. The second semiconducting layer comprises a first Group III-nitride including a donor dopant such that the second semiconducting layer has a donor density of at least 5×1018 cm-3. The second semiconducting layer has an areal porosity of at least 15% and a first in-plane lattice constant. The third semiconducting layer comprises a second Group III-nitride different to the first Group-III-nitride.

Abstract: A method of forming a strain relaxation layer in an epitaxial crystalline structure, the method comprising: providing a crystalline template layer comprising a material with a first natural relaxed in-plane lattice parameter; forming a first epitaxial crystalline layer on the crystalline template layer, wherein the first epitaxial crystalline layer has an initial electrical conductivity that is higher than the electrical conductivity of the crystalline template layer; forming a second epitaxial crystalline layer on the first epitaxial crystalline layer, wherein the second epitaxial crystalline layer has an electrical conductivity lower than the initial electrical conductivity of the first epitaxial crystalline layer and comprises a material with a second natural relaxed in-plane lattice parameter that is different to the first natural relaxed in-plane lattice parameter of the crystalline template layer; forming pores in the first epitaxial crystalline layer by electrochemical etching of the first epitaxial cr

Abstract: A monolithic LED array precursor comprising a plurality of LED structures sharing a first semiconductor layer, wherein the first semiconductor layer defines a plane of the LED array precursor, each LED structure comprising (i) a second semiconductor layer on the first semiconductor layer, having an upper surface portion parallel to the plane of the LED array precursor, the second semiconductor layer having a regular trapezoidal cross-section normal to the upper surface portion, such that the second semiconductor layer has sloped sides, (ii) a third semiconductor layer on the second semiconductor layer, having an upper surface portion parallel to the plane of the LED array precursor, the third semiconductor layer having a regular trapezoidal cross-section normal to the upper surface portion, such that the third semiconductor layer has sloped sides parallel to the sloped sides of the second semiconductor layer, (iii) a fourth semiconductor layer on the third semiconductor layer, having an upper surface portion

Abstract: An optical device comprising a light emitting structure having substantially vertical sidewalls, the light emitting structure comprising an active layer, the active layer being configured to emit light when an electrical current is applied to the device; an electrically insulating, optically transparent spacer layer having an internal face facing the sidewalls of the light emitting structure and an opposing external face, wherein the spacer layer is configured to enhance light extraction from the active layer; and a reflective, electrically conducting mirror layer disposed on the external face of the spacer layer.

Abstract: A method of forming an optical device, the method comprising the steps of forming spacers on the substantially vertical sidewalls of a sacrificial mesa, the spacers being formed from a first electrically insulating, optically transparent material, and having an internal face contacting the mesa, and a second opposing external face; depositing a reflective, electrically conducting material so as to form a mirror layer on the external face of the spacers; removing the sacrificial mesa so as to form a pocket between the internal faces of the spacers; installing a die having substantially vertical sidewalls into the pocket between the internal faces of the spacers.