Abstract: A process of patterning magnetic multilayer films including the steps of successively depositing a plurality of magnetic multilayer films on a supporting substrate, selectively removing portions of the plurality of magnetic multilayer films using a reactive plasma etch including chlorine gas, and passivating in situ, or an adjacent evacuated chamber, remaining portions of the plurality of magnetic multilayer films, i.e. the memory elements, in a post-etch fluorinated plasma.

Abstract: A method of passivating interface states of oxide-compound semiconductor interfaces using molecular, atomic, or isotopic species wherein said species are applied before oxide deposition in ultra-high vacuum, or during interruption of oxide deposition in ultra-high vacuum (preferentially after oxide surface coverage of a submonolayer, a monolayer, or a few monolayers), or during oxide deposition in ultra-high vacuum, or after completion of oxide deposition, or before or after any processing steps of the as deposited interface structure. In a preferred embodiment, hydrogen or deuterium atoms are applied to a Ga.sub.2 O.sub.3 --GaAs interface at some point before, during, or after oxide deposition in ultra-high vacuum, or before or after any processing steps of the as deposited interface structure, at any given and useful substrate temperature wherein the atomic species can be provided by any one of RF discharge, microwave plasma discharge, or thermal dissociation.