Abstract: A method of inspecting a semiconductor substrate having a back surface and including at least one piece of metal embedded in the substrate comprises directing measuring light towards the back surface of the substrate and detecting a portion of the measuring light received back from the substrate. The method also includes determining a distance between the piece of metal and the back surface based upon the detected measuring light received back from the substrate.

Abstract: A method for detecting embedded voids present in a structure formed in or on a semiconductor substrate is described. The method includes performing a processing step P1 for forming the structure; measuring the mass M1 of the substrate; performing thermal treatment; measuring the mass M2 of the substrate; calculating the mass difference between the mass of the substrate measured before and after the performed thermal treatment; and deducing the presence of embedded voids in the structure by comparing the mass difference with a pre-determined value.

Abstract: A method of inspecting a semiconductor substrate having a back surface and including at least one piece of metal embedded in the substrate comprises directing measuring light towards the back surface of the substrate and detecting a portion of the measuring light received back from the substrate. The method also includes determining a distance between the piece of metal and the back surface based upon the detected measuring light received back from the substrate.

Abstract: Disclosed is a method for performing a physical force-assisted cleaning process on a patterned surface of a substrate, including providing a substrate having at least one patterned surface, supplying a cleaning liquid to the patterned surface, and applying a physical force to the cleaning liquid in contact with the patterned surface, whereby the physical force leads to bubble formation in the cleaning liquid. Furthermore, and prior to applying the physical force, an additive is supplied to the surface, and the additive is maintained in contact with the surface for a given time, the additive and the time being chosen so that a substantially complete wetting of the surface by the cleaning liquid is achieved.