Patents by Inventor Saneyuki Goya
Saneyuki Goya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8507312Abstract: An object is to obtain a high-efficiency photoelectric conversion device having a crystalline silicon i-layer in a photoelectric conversion layer. Disclosed is a fabrication method for a photoelectric conversion device that includes a step of forming, on a substrate, a photoelectric conversion layer having an i-layer formed mainly of crystalline silicon. The method includes the steps of determining an upper limit of an impurity concentration in the i-layer according to the Raman ratio of the i-layer; and forming the i-layer so as to have a value equal to or less than the determined upper limit of the impurity concentration. Alternatively, an upper limit of impurity-gas concentration in a film-formation atmosphere is determined according to the Raman ratio of the i-layer, and the i-layer is formed while controlling the impurity-gas concentration so as to have a value equal to or less than the determined upper limit.Type: GrantFiled: May 7, 2010Date of Patent: August 13, 2013Assignee: Mitsubishi Heavy Industries, Ltd.Inventors: Hiroomi Miyahara, Saneyuki Goya, Satoshi Sakai, Tatsuyuki Nishimiya
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Patent number: 8481848Abstract: A large surface area photovoltaic device having high conversion efficiency and excellent mass productivity is provided. A photovoltaic device 100 having a photovoltaic layer 3 comprising a crystalline silicon layer formed on a substrate 1, wherein the crystalline silicon layer has a crystalline silicon i-layer 42, and the crystalline silicon i-layer 42 has a substrate in-plane distribution represented by an average value for the Raman peak ratio, which represents the ratio of the Raman peak intensity for the crystalline silicon phase relative to the Raman peak intensity for the amorphous silicon phase, that is not less than 4 and not more than 8, a standard deviation for the Raman peak ratio that is not less than 1 and not more than 3, and a proportion of regions in which the Raman peak ratio is not more than 4 of not less than 0% and not more than 15%.Type: GrantFiled: January 7, 2009Date of Patent: July 9, 2013Assignee: Mitsubishi Heavy Industries, Ltd.Inventors: Saneyuki Goya, Eishiro Sasakawa, Hiroshi Mashima, Satoshi Sakai
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Publication number: 20120135561Abstract: An object is to obtain a high-efficiency photoelectric conversion device having a crystalline silicon i-layer in a photoelectric conversion layer. Disclosed is a fabrication method for a photoelectric conversion device that includes a step of forming, on a substrate, a photoelectric conversion layer having an i-layer formed mainly of crystalline silicon. The method includes the steps of determining an upper limit of an impurity concentration in the i-layer according to the Raman ratio of the i-layer; and forming the i-layer so as to have a value equal to or less than the determined upper limit of the impurity concentration. Alternatively, an upper limit of impurity-gas concentration in a film-formation atmosphere is determined according to the Raman ratio of the i-layer, and the i-layer is formed while controlling the impurity-gas concentration so as to have a value equal to or less than the determined upper limit.Type: ApplicationFiled: May 7, 2010Publication date: May 31, 2012Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.Inventors: Hiroomi Miyahara, Saneyuki Goya, Satoshi Sakai, Tatsuyuki Nishimiya
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Publication number: 20120012168Abstract: A film thickness configuration for a triple-junction photovoltaic device that is suitable for obtaining high conversion efficiency.Type: ApplicationFiled: January 7, 2009Publication date: January 19, 2012Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.Inventors: Saneyuki Goya, Yasuyuki Kobayashi, Satoshi Sakai
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Publication number: 20110303289Abstract: A process for producing a photovoltaic device that suppresses variations in the photovoltaic conversion efficiency within the plane of a large surface area substrate, suppresses fluctuations in the module power output between production lots, and enables an improvement in the productivity. A process for producing a photovoltaic device that includes forming a silicon-based photovoltaic layer on a substrate using a plasma enhanced CVD method that employs a gas containing a silane-based gas and hydrogen gas as the raw material gas, under conditions in which the flow rate of the hydrogen gas per unit surface area of the substrate is not less than 80 slm/m2.Type: ApplicationFiled: July 8, 2009Publication date: December 15, 2011Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.Inventors: Saneyuki Goya, Satoshi Sakai
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Publication number: 20110126903Abstract: A photovoltaic device in which, by optimizing the structures for a substrate-side transparent electrode layer, an intermediate layer, and a back electrode layer, the extracted electrical current can be increased. The photovoltaic device includes at least a transparent electrode layer, a photovoltaic layer and a back electrode layer provided on a substrate, wherein the surface of the transparent electrode layer on which the photovoltaic layer is disposed includes a textured structure composed of ridges and a fine micro-texture provided on the surface of the ridges, the pitch of the textured structure is not less than 1.2 ?m and not more than 1.6 ?m, the height of the ridges is not less than 0.2 ?m and not more than 0.8 ?m, the pitch between peaks in the fine micro-texture is not less than 0.05 ?m and not more than 0.14 ?m, and the height of peaks is not less than 0.02 ?m and not more than 0.1 ?m.Type: ApplicationFiled: August 11, 2009Publication date: June 2, 2011Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.Inventors: Yasuyuki Kobayashi, Satoshi Sakai, Saneyuki Goya
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Publication number: 20110100444Abstract: A photovoltaic device that exhibits increased open-circuit voltage and an improved fill factor due to an improvement in the contact properties between the n-layer and a back-side transparent electrode layer or intermediate contact layer, and a process for producing the photovoltaic device. The photovoltaic device comprises a photovoltaic layer having a p-layer, an i-layer and an n-layer stacked on top of a substrate, wherein the n-layer comprises a nitrogen-containing n-layer and an interface treatment layer formed on the opposite surface of the nitrogen-containing n-layer to the substrate, the nitrogen-containing n-layer comprises nitrogen atoms at an atomic concentration of not less than 1% and not more than 20%, and has a crystallization ratio of not less than 0 but less than 3, and the interface treatment layer has a crystallization ratio of not less than 1 and not more than 6.Type: ApplicationFiled: July 8, 2009Publication date: May 5, 2011Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.Inventors: Shigenori Tsuruga, Kengo Yamaguchi, Saneyuki Goya, Satoshi Sakai
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Publication number: 20100206373Abstract: A large surface area photovoltaic device having high conversion efficiency and excellent mass productivity is provided. A photovoltaic device 100 having a photovoltaic layer 3 comprising a crystalline silicon layer formed on a substrate 1, wherein the crystalline silicon layer has a crystalline silicon i-layer 42, and the crystalline silicon i-layer 42 has a substrate in-plane distribution represented by an average value for the Raman peak ratio, which represents the ratio of the Raman peak intensity for the crystalline silicon phase relative to the Raman peak intensity for the amorphous silicon phase, that is not less than 4 and not more than 8, a standard deviation for the Raman peak ratio that is not less than 1 and not more than 3, and a proportion of regions in which the Raman peak ratio is not more than 4 of not less than 0% and not more than 15%.Type: ApplicationFiled: January 7, 2009Publication date: August 19, 2010Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.Inventors: Saneyuki Goya, Eishiro Sasakawa, Hiroshi Mashima, Satoshi Sakai
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Publication number: 20100170565Abstract: A photovoltaic device having improved conversion efficiency as a result of an increase in the open-circuit voltage is provided. The photovoltaic device comprises a photovoltaic layer having a stacked p-layer, i-layer and n-layer, wherein the p-layer is a nitrogen-containing layer comprising nitrogen atoms at an atomic concentration of not less than 1% and not more than 25%, and the crystallization ratio of the p-layer is not less than 0 but less than 3. Alternatively, the n-layer may be a nitrogen-containing layer comprising nitrogen atoms at an atomic concentration of not less than 1% and not more than 20%, wherein the crystallization ratio of the n-layer is not less than 0 but less than 3. Alternatively, an interface layer may be formed at the interface between the p-layer and the i-layer, wherein the interface layer is a nitrogen-containing layer comprising nitrogen atoms at an atomic concentration of not less than 1% and not more than 30%.Type: ApplicationFiled: December 5, 2008Publication date: July 8, 2010Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.Inventors: Shigenori Tsuruga, Kengo Yamaguchi, Saneyuki Goya, Satoshi Sakai
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Publication number: 20100163100Abstract: A photovoltaic device with improved cell properties having a photovoltaic layer comprising microcrystalline silicon-germanium, and a process for producing the device. A buffer layer comprising microcrystalline silicon or microcrystalline silicon-germanium, and having a specific Raman peak ratio is provided between a substrate-side impurity-doped layer and an i-layer comprising microcrystalline silicon-germanium.Type: ApplicationFiled: April 3, 2007Publication date: July 1, 2010Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.Inventors: Saneyuki Goya, Satoshi Sakai, Kouji Satake
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Publication number: 20100116331Abstract: A photovoltaic device and a process for producing the device that enables a higher level of performance to be achieved at low cost. The photovoltaic device includes at least two laminated photovoltaic layers, and an intermediate layer that is disposed between the two photovoltaic layers and connects the two photovoltaic layers electrically and optically, wherein the surface of the intermediate layer has a plasma-resistant protective layer.Type: ApplicationFiled: February 8, 2008Publication date: May 13, 2010Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.Inventors: Yasuyuki Kobayashi, Satoshi Sakai, Kengo Yamaguchi, Yuji Asahara, Saneyuki Goya
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Publication number: 20090183775Abstract: A photovoltaic device having a high conversion efficiency is produced in a stable manner. The conditions for film deposition of a microcrystalline silicon photovoltaic layer (4) in a photovoltaic device are set based on the Raman peak ratio within a Raman spectrum obtained at the substrate (1) side of the microcrystalline silicon layer (4), and the Raman peak ratio within a Raman spectrum obtained at the opposite side to the substrate (1).Type: ApplicationFiled: August 30, 2007Publication date: July 23, 2009Applicant: Mitsubishi Heavy Industries, Ltd.Inventors: Saneyuki Goya, Youji Nakano, Kouji Satake
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Publication number: 20090095425Abstract: An apparatus for forming a metal film, including a reaction vessel for housing a substrate, a precursor feeding device for bubbling a carrier gas through a liquid organometallic complex, vaporizing the organometallic complex, producing a precursor from the vaporized organometallic complex, and feeding the precursor into the reaction vessel, a rotating magnetic field generator for creating a rotating magnetic field in a space above the substrate, and a second plasma generator for generating a plasma from a reducing gas fed into the reaction vessel.Type: ApplicationFiled: October 8, 2008Publication date: April 16, 2009Applicant: PHYZCHEMIX CORPORATIONInventors: Hitoshi SAKAMOTO, Toshihiko NISHIMORI, Saneyuki GOYA, Takao ABE, Noriaki UEDA
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Publication number: 20070221269Abstract: The efficiency of a thin film Si solar battery is improved. Between a back face electrode and a transparent conductive film provided on a front face side of the back face electrode, a refractive index adjustment layer is interposed made from a material that has a lower refractive index than that of the transparent conductive film. For example when the transparent conductive film is GZO, SiO2 is interposed between the transparent conductive film and the back face electrode made from Ag. As a result light that penetrates into and is absorbed at the back face electrode is reduced, and the reflectivity of light at the back face electrode is improved.Type: ApplicationFiled: October 24, 2006Publication date: September 27, 2007Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.Inventors: Satoshi Sakai, Yasuyuki Kobayashi, Saneyuki Goya, Youji Nakano
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Publication number: 20060191481Abstract: An apparatus for forming a metal film, including a reaction vessel for housing a substrate, a precursor feeding device for bubbling a carrier gas through a liquid organometallic complex, vaporizing the organometallic complex, producing a precursor from the vaporized organometallic complex, and feeding the precursor into the reaction vessel, a rotating magnetic field generator for creating a rotating magnetic field in a space above the substrate, and a second plasma generator for generating a plasma from a reducing gas fed into the reaction vessel.Type: ApplicationFiled: March 29, 2006Publication date: August 31, 2006Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.Inventors: Hitoshi Sakamoto, Toshihiko Nishimori, Saneyuki Goya, Takao Abe, Noriaki Ueda
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Publication number: 20060191477Abstract: An apparatus for forming a metal film, including a reaction vessel in which a substrate to be treated is placed, a raw material gas feed pipe inserted into the inlet vessel for feeding chlorine or hydrogen chloride, a spiral tube attached to the inner end of the raw material gas feed pipe, having a raw material gas flow passage whose inner surface is made of copper, and equipped with a heating element, an atomic reducing gas producing device for producing an atomic reducing gas within the reaction vessel, at least in the neighborhood of the substrate to be treated, and an evacuation device for evacuating any gas from the reaction vessel and the raw material gas flow passage.Type: ApplicationFiled: March 29, 2006Publication date: August 31, 2006Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.Inventors: Hitoshi Sakamoto, Toshihiko Nishimori, Saneyuki Goya, Takao Abe, Noriaki Ueda
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Publication number: 20060177583Abstract: A method for forming a metal film, including bringing a raw material gas containing a halogen into contact with a hot metallic filament, thereby etching the filament with the raw material gas to produce a precursor composed of a metallic component contained in the filament and the halogen contained in the raw material gas, producing an atomic reducing gas by heating a reducing gas to a high temperature, passing the precursor through the atomic reducing gas to remove the halogen from the precursor, and directing the resulting metallic ion or neutral metal onto a substrate to form a thin metal film on the substrate.Type: ApplicationFiled: March 29, 2006Publication date: August 10, 2006Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.Inventors: Hitoshi Sakamoto, Toshihiko Nishimori, Saneyuki Goya, Takao Abe, Noriaki Ueda
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Publication number: 20050205127Abstract: A photovoltaic device is formed by depositing at least a first transparent electrode, PIN-structured or NIP-structured microcrystalline silicon layers, a second transparent electrode, and a back electrode in sequence on an electrically insulating transparent substrate. The PIN-structured or NIP-structured microcrystalline silicon layers include a p-type silicon layer, an i-type silicon layer, and an n-type silicon layer. At least one of the first transparent electrode and the second transparent electrode is a ZnO layer doped with Ga, and the Ga concentration is 15 atomic percent or less with respect to Zn.Type: ApplicationFiled: January 4, 2005Publication date: September 22, 2005Applicant: MITSUBISHI HEAVY INDUSTRIES LTD.Inventors: Toshiya Watanabe, Nobuki Yamashita, Youji Nakano, Saneyuki Goya, Satoshi Sakai, Yoshimichi Yonekura
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Publication number: 20040091636Abstract: The present invention provides methods and apparatus for the formation of a thin noble metal film which can achieve a high rate of film growth, can use inexpensive raw materials, and do not allow any impurities to remain in the thin film.Type: ApplicationFiled: October 15, 2003Publication date: May 13, 2004Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.Inventors: Hitoshi Sakamoto, Toshihiko Nishimori, Saneyuki Goya, Takao Abe, Noriaki Ueda
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Patent number: 6656540Abstract: The present invention provides methods and apparatus for the formation of a thin noble metal film which can achieve a high rate of film growth, can use inexpensive raw materials, and do not allow any impurities to remain in the thin film.Type: GrantFiled: November 27, 2001Date of Patent: December 2, 2003Assignee: Mitsubishi Heavy Industries, Ltd.Inventors: Hitoshi Sakamoto, Toshihiko Nishimori, Saneyuki Goya, Takao Abe, Noriaki Ueda