Abstract: Disclosed is a thermo-therapeutic apparatus capable of controlling movement of a heating moxibustion device which can intensively massage a part desired by the user, can massage in various ways such as moxibustion or thermal massage, and can quickly move to a location desired by the user. To this end, a thermo-therapeutic apparatus capable of controlling movement of a heating moxibustion device includes a heating moxibustion device, a driving unit for moving the heating moxibustion device, a control unit for controlling an operation of the driving unit, and an input unit for selecting a thermal massage pattern desired by a user, wherein the control unit is equipped with an automatic mode in which when the user inputs a desired location, the heating moxibustion device is controlled to automatically move to the location to perform a thermal massage.

Abstract: Embodiments provide raised pad formations for step contacts in three-dimensional structures formed on microelectronic workpieces. Steps are formed in a multilayer stack that is used for the three-dimensional structure. The multilayer stack includes alternating non-conductive and conductive layers. For one embodiment, alternating oxide and polysilicon layers are used. The steps expose contact regions on different conductive layers. Material layers are formed on the contact regions to form raised pads. The material layers preferably have a high selectivity with respect to the non-conductive material for etch processes. A protective layer is formed over the steps and the raised pads, and contact holes are formed through the protective layer to the raised pads. Contacts are then formed within the contact holes. The raised pads inhibit punch-through of the non-conductive layers during the forming of the contact holes thereby improving performance of resulting devices formed in the microelectronic workpieces.

Abstract: A reflected-wave processing apparatus according to one embodiment of the present invention may comprise: a reference signal generation unit for applying, to a cable, a first reference signal, the frequency of which increases over time, and a second reference signal, the frequency of which decreases over time; a reflected-signal acquisition unit for acquiring a first reflected signal and a second reflected signal which are reflected from the cable upon applying the first and second reference signals thereto; and a signal analysis unit for analyzing the first and second reflected signals.

Abstract: Residue at the base of a feature in a substrate to be etched is limited so that improved profiles may be obtained when forming vertical, narrow pitch, high aspect ratio features, for example fin field effect transistor (FinFET) gates. A thin bottom layer of the feature is formed of a different material than the main layer of the feature. The bottom material may be comprised of a material that preferentially etches and/or preferentially oxidizes as compared to the main layer. The bottom layer may comprise silicon germanium. The preferential etching characteristics may provide a process in which un-etched residuals do not remain. Even if residuals remain, after etch of the feature, an oxidation process may be performed. Enhanced oxidation rates of the bottom material allow any remaining residual to be oxidized. Plasma oxidation may be used. The oxidized material may then be removed by utilizing standard oxide removal mechanisms.

Abstract: The present invention relates to a method for controlling an acupressure force and a body scan in real-time and, more specifically, the method comprises the steps of: (a) setting a reference vertical height for each horizontal position of an acupressure part, and setting a target acupressure force within the range of the reference vertical height; (b) calculating a current measurement acupressure force by means of a user's load measurement data applied to a load cell; and (c) comparing the target acupressure force with the current measurement acupressure force so as to control the vertical height of the acupressure part.

Abstract: The present invention relates to mesoporous silica embedded with alloy particles, and a preparation method thereof, and it is possible to prevent the release of metal particles to the outside because the inside of spherical mesoporous silica is embedded with metal nanoparticles, and as the aggregation of the metal is prevented, the stability is excellent and the production yield is high during the preparation process, so that mesoporous silica can be mass-produced, the efficacy of metal nanoparticles may be maintained by preventing the oxidation of metal nanoparticles, and mesoporous silica can be produced at low costs. Further, the inside of pores of mesoporous silica is embedded with metal nanoparticles, so that the discoloration and smell change phenomenon does not occur, and the far-infrared emission and deodorization effects are excellent.

Abstract: A massager controlling apparatus and a method thereof are provided. The massager controlling apparatus according to an embodiment of the present disclosure includes a setting part configured to set a massage mode and a control part configured to control a moving speed of a driving module performing massage to adjust at least one of an operation time of a corresponding massage pattern and massage strength according to the massage mode set by the setting part and a body shape of a user.

Abstract: Disclosed are a thermotherapeutic apparatus having a function of measuring a heart rate and a method of controlling the same. The thermotherapeutic apparatus includes a pretreatment portion which extracts a ballistocardiogram signal sensed by a weight detecting sensor, a heartbeat signal extractor which extracts a heartbeat signal from the pretreated signal, and a mode performer which performs control to calculate a heart rate on the basis of the extracted heartbeat signal, to determine a massage mode according to the calculated heart rate, and to automatically set a massage pattern, a massage level, and a massage temperature of the corresponding massage mode so as to perform the corresponding massage mode.

Abstract: A reflected-wave processing apparatus according to one embodiment of the present invention may comprise: a reference signal generation unit for applying, to a cable, a first reference signal, the frequency of which increases over time, and a second reference signal, the frequency of which decreases over time; a reflected-signal acquisition unit for acquiring a first reflected signal and a second reflected signal which are reflected from the cable upon applying the first and second reference signals thereto; and a signal analysis unit for analyzing the first and second reflected signals.

Abstract: Methods are described for protecting cobalt (Co) metal plugs used for making electrical connections within a semiconductor device. In one example, method includes providing a substrate containing a Co metal plug in a dielectric layer, and selectively forming a ruthenium (Ru) metal cap layer on the Co metal plug. In another example, the method includes providing a substrate containing a Co metal plug in a first dielectric layer, selectively forming a Ru metal cap layer on the Co metal plug, depositing a second dielectric layer on the Ru metal cap layer and on the first dielectric layer, etching a recessed feature in the second dielectric layer to expose the Ru metal cap layer, and performing a cleaning process that removes polymer etch residue from the Ru metal cap layer in the recessed feature.

Abstract: The present invention relates to a superconductive cable cooling system including: a refrigerator unit including a compressor and an after-cooler; a plurality of heat exchangers for performing heat exchange of a cooling fluid; an expansion valve for performing throttle expansion of the cooling fluid; an expander for adiabatically expanding the cooling fluid; a superconductive cable; and a plurality of branch points at which the cooling fluid is branched and joined, wherein the cooling fluid functions as both a refrigerant for the refrigerator unit and a coolant for the superconductive cable.

Abstract: An apparatus including a thermal ceramic module including a body, a first supporting plate located on the body, a second supporting plate located on the first plate, an ascending and descending driving part coupled to a lower portion of the first plate and configured to move the first plate in a vertical direction on the basis of the body, and a ceramic member coupled to the second plate; a weight sensor provided on a lower surface of the second plate to sense a body pressure of a user; and a controller configured to control a massage mode of the thermal ceramic module, wherein the controller controls a driving height of the ascending and descending driving part according to the body pressure of the user sensed by the weight sensor to provide the same pressure to the user through the ceramic member on the basis of a predetermined desired intensity.

Abstract: To provide a heating apparatus for a heat treatment machine configured to accurately bring each ceramic member into contact with a set moxibustion point, the present invention provides a heating apparatus for a heat treatment machine including a base plate, an ascending and descending member of which one end is coupled to the base plate through a coupler, a plurality of ceramic members provided in the ascending and descending member, a first driving part configured to raise and lower the ascending and descending member, and a second driving part configured to convey the base plate in a horizontal direction.

Abstract: The present invention relates to a method for controlling an acupressure force and a body scan in real-time and, more specifically, the method comprises the steps of: (a) setting a reference vertical height for each horizontal position of an acupressure part, and setting a target acupressure force within the range of the reference vertical height; (b) calculating a current measurement acupressure force by means of a user's load measurement data applied to a load cell; and (c) comparing the target acupressure force with the current measurement acupressure force so as to control the vertical height of the acupressure part.

Abstract: Aspects of the present invention generally relate to approaches for forming a semiconductor device such as a TSV device having a “buffer zone” or gap layer between the TSV and transistor(s). The gap layer is typically filled with a low stress thin film fill material that controls stresses and crack formation on the devices. Further, the gap layer ensures a certain spatial distance between TSVs and transistors to reduce the adverse effects of temperature excursion.

Abstract: Aspects of the present invention generally relate to approaches for forming a semiconductor device such as a TSV device having a “buffer zone” or gap layer between the TSV and transistor(s). The gap layer is typically filled with a low stress thin film fill material that controls stresses and crack formation on the devices. Further, the gap layer ensures a certain spatial distance between TSVs and transistors to reduce the adverse effects of temperature excursion.

Abstract: Aspects of the present invention generally relate to approaches for forming a semiconductor device such as a TSV device having a “buffer zone” or gap layer between the TSV and transistor(s). The gap layer is typically filled with a low stress thin film fill material that controls stresses and crack formation on the devices. Further, the gap layer ensures a certain spatial distance between TSVs and transistors to reduce the adverse effects of temperature excursion.

Abstract: The present invention relates to a method of preparing a spherical mesoporous silica structure containing silver nanoparticles dispersed therein by adding a silver nitrate solution to an aqueous surfactant solution and performing a sol-gel process and to spherical mesoporous silica prepared thereby. The spherical mesoporous silica is cost-effective compared to a conventional method that uses silver nanoparticles as a raw material, because the silver nitrate solution that is inexpensive compared to silver nanoparticles is used. Also, the spherical mesoporous silica can be with high productivity in large amounts, and thus is easily commercialized. Moreover, because silver nanoparticles are incorporated into the pores of the mesoporous silica, the silver nanoparticles are used stably and do not change color and odor. In addition, the spherical mesoporous silica exhibits various additional effects, including far-infrared ray emission and deodorization, attributable to silica.

Abstract: Methods for fabricating integrated circuits are provided herein. In an embodiment, a method for fabricating an integrated circuit includes providing a mandrel layer overlying a semiconductor substrate and patterning the mandrel layer into mandrel structures. The method further includes forming a protective layer between the mandrel structures. Spacers are formed around each of the mandrel structures and overlying the protective layer to define exposed regions of the protective layer and covered regions of the protective layer. The exposed regions of the protective layer are etched using the spacers and the mandrel structures as a mask. The spacers are removed from the covered regions of the protective layer. The covered regions of the protective layer form mask segments for etching the semiconductor substrate. The method removes the mandrel structures and etches the semiconductor substrate exposed between mask segments to form semiconductor fin structures.

Abstract: Aspects of the present invention generally relate to approaches for forming a semiconductor device such as a TSV device having a “buffer zone” or gap layer between the TSV and transistor(s). The gap layer is typically filled with a low stress thin film fill material that controls stresses and crack formation on the devices. Further, the gap layer ensures a certain spatial distance between TSVs and transistors to reduce the adverse effects of temperature excursion.