Abstract: Aspects of the present invention generally relate to approaches for forming a semiconductor device such as a TSV device having a “buffer zone” or gap layer between the TSV and transistor(s). The gap layer is typically filled with a low stress thin film fill material that controls stresses and crack formation on the devices. Further, the gap layer ensures a certain spatial distance between TSVs and transistors to reduce the adverse effects of temperature excursion.

Abstract: Methods for fabricating integrated circuits are provided herein. In an embodiment, a method for fabricating an integrated circuit includes providing a mandrel layer overlying a semiconductor substrate and patterning the mandrel layer into mandrel structures. The method further includes forming a protective layer between the mandrel structures. Spacers are formed around each of the mandrel structures and overlying the protective layer to define exposed regions of the protective layer and covered regions of the protective layer. The exposed regions of the protective layer are etched using the spacers and the mandrel structures as a mask. The spacers are removed from the covered regions of the protective layer. The covered regions of the protective layer form mask segments for etching the semiconductor substrate. The method removes the mandrel structures and etches the semiconductor substrate exposed between mask segments to form semiconductor fin structures.

Abstract: Disclosed herein are a method for synthesizing one-dimensional helical mesoporous structure, in which a self-assembled structure of a glycine-derived surfactant is used as a template at room temperature to synthesize the one-dimensional helical mesoporous silica structures having a uniform pore size and a method for synthesizing a glycine-derived surfactant for synthesizing the helical nanoporous structures, in which relatively expensive surfactant can be easily recovered using an organic solvent and reused, which provides economical and environment friendly effects and the glycine-derived surfactant is synthesized by homogeneously heating a reaction product of glycine and phthalic anhydride by dielectric heating with irradiation of microwave, whereby it is possible to realize high yield of the glycine-derived surfactant, shortened synthesis time and increase in energy efficiency, leading to improvement in productivity and reduction in production cost.

Abstract: The present invention relates to a method of preparing a spherical mesoporous silica structure containing silver nanoparticles dispersed therein by adding a silver nitrate solution to an aqueous surfactant solution and performing a sol-gel process and to spherical mesoporous silica prepared thereby. The spherical mesoporous silica is cost-effective compared to a conventional method that uses silver nanoparticles as a raw material, because the silver nitrate solution that is inexpensive compared to silver nanoparticles is used. Also, the spherical mesoporous silica can be with high productivity in large amounts, and thus is easily commercialized. Moreover, because silver nanoparticles are incorporated into the pores of the mesoporous silica, the silver nanoparticles are used stably and do not change color and odor. In addition, the spherical mesoporous silica exhibits various additional effects, including far-infrared ray emission and deodorization, attributable to silica.

Abstract: Disclosed herein are a method for synthesizing one-dimensional helical mesoporous structure, in which a self-assembled structure of a glycine-derived surfactant is used as a template at room temperature to synthesize the one-dimensional helical mesoporous silica structures having a uniform pore size and a method for synthesizing a glycine-derived surfactant for synthesizing the helical nanoporous structures, in which relatively expensive surfactant can be easily recovered using an organic solvent and reused, which provides economical and environment friendly effects and the glycine-derived surfactant is synthesized by homogeneously heating a reaction product of glycine and phthalic anhydride by dielectric heating with irradiation of microwave, whereby it is possible to realize high yield of the glycine-derived surfactant, shortened synthesis time and increase in energy efficiency, leading to improvement in productivity and reduction in production cost.

Abstract: A method of forming a dual damascene semiconductor interconnection and an etchant composition specially adapted for stripping a sacrificial layer in a dual damascene fabrication process without profile damage to a dual damascene pattern are provided. The method includes sequentially forming a first etch stop layer, a first intermetal dielectric, a second intermetal dielectric, and a capping layer on a surface of a semiconductor substrate on which a lower metal wiring is formed; etching the first intermetal dielectric, the second intermetal dielectric, and the capping layer to form a via; forming a sacrificial layer within the via; etching the sacrificial layer, the second intermetal dielectric, and the capping layer to form a trench; removing the sacrificial layer remaining around the via using an etchant composition including NH4F, HF, H2O and a surfactant; and forming an upper metal wiring within the thus formed dual damascene pattern including the via and the trench.

Abstract: A chair with a combination back support and cover plate is provided, which solves a burdensome affair that a user consistently holds up a back support folded on a seat until he or she sits on the seat, makes the back support automatically folded on the seat after use of the seat, to thereby enhance convenience of use, and prevents the back support from being unfolded upwards from the state where the back support has been folded on the seat due to wind, to thereby prevent the seat from being polluted due to dust or rainwater.

Abstract: Methods are provided for fabricating a semiconductor device that include the steps of: sequentially forming a metal interconnection and a protecting layer on a semiconductor substrate; forming a contact hole on the protecting layer; isolating the contact hole by forming a molding layer and an etching stop layer stacked thereon; forming a sacrificial layer on the etching stop layer so as to fill the contact hole; forming a photoresist layer with an opening so as to expose the sacrificial layer and such that the opening of the photoresist layer aligns with the contact hole; forming a trench in the molding layer to penetrate the sacrificial layer and the etching stop layer; and performing a wet etching on the semiconductor substrate having the trench to remove the photoresist layer and the sacrificial layer, wherein the wet etching step is performed using an organic compound and fluoride ion-based buffered solution.

Abstract: Methods of fabricating a microelectronic device having improved performance characteristics are disclosed which are characterized by using super critical fluid to perform a material removal step. In one illustrative embodiment, the method includes preparing a substrate, forming an HSQ layer covering at least a portion of the substrate, and thereafter removing at least portions of the HSQ layer using super critical fluid CO2.

Abstract: A flexible membrane for a polishing head and a chemical mechanical polishing (CMP) apparatus having the same are provided. The flexible membrane for a polishing head includes a compressing plate having a first face and a second face opposite to the first face. The first face of the compressing plate holds a substrate with a vacuum provided thereto and compresses the substrate on a polishing pad. The second face of the compressing plate is combined with a supporter of the polishing head. The second face and the supporter define a space to which the vacuum for holding the substrate and a first pneumatic pressure for compressing the substrate are applied. A dividing member combined with the supporter is formed on the second face. The dividing member divides the space into at least two regions. A pneumatic pressure-introducing portion is formed at the dividing member. A second pneumatic pressure is provided to the compressing plate through the pneumatic pressure-introducing portion.

Abstract: A a chair with a combination back support and cover plate is provided, which solves a burdensome affair that a user consistently holds up a back support folded on a seat until he or she sits on the seat, makes the back support automatically folded on the seat after use of the seat, to thereby enhance convenience of use, and prevents the back support from being unfolded upwards from the state where the back support has been folded on the seat due to wind, to thereby prevent the seat from being polluted due to dust or rainwater.

Abstract: Methods are provided for fabricating a semiconductor device that include the steps of: sequentially forming a metal interconnection and a protecting layer on a semiconductor substrate; forming a contact hole on the protecting layer; isolating the contact hole by forming a molding layer and an etching stop layer stacked thereon; forming a sacrificial layer on the etching stop layer so as to fill the contact hole; forming a photoresist layer with an opening so as to expose the sacrificial layer and such that the opening of the photoresist layer aligns with the contact hole; forming a trench in the molding layer to penetrate the sacrificial layer and the etching stop layer; and performing a wet etching on the semiconductor substrate having the trench to remove the photoresist layer and the sacrificial layer, wherein the wet etching step is performed using an organic compound and fluoride ion-based buffered solution.

Abstract: A flexible membrane for a polishing head and a chemical mechanical polishing (CMP) apparatus having the same are provided. The flexible membrane for a polishing head includes a compressing plate having a first face and a second face opposite to the first face. The first face of the compressing plate holds a substrate with a vacuum provided thereto and compresses the substrate on a polishing pad. The second face of the compressing plate is combined with a supporter of the polishing head. The second face and the supporter define a space to which the vacuum for holding the substrate and a first pneumatic pressure for compressing the substrate are applied. A dividing member combined with the supporter is formed on the second face. The dividing member divides the space into at least two regions. A pneumatic pressure-introducing portion is formed at the dividing member. A second pneumatic pressure is provided to the compressing plate through the pneumatic pressure-introducing portion.

Abstract: A method of forming a dual damascene semiconductor interconnection and an etchant composition specially adapted for stripping a sacrificial layer in a dual damascene fabrication process without profile damage to a dual damascene pattern are provided. The method includes sequentially forming a first etch stop layer, a first intermetal dielectric, a second intermetal dielectric, and a capping layer on a surface of a semiconductor substrate on which a lower metal wiring is formed; etching the first intermetal dielectric, the second intermetal dielectric, and the capping layer to form a via; forming a sacrificial layer within the via; etching the sacrificial layer, the second intermetal dielectric, and the capping layer to form a trench; removing the sacrificial layer remaining around the via using an etchant composition including NH4F, HF, H2O and a surfactant; and forming an upper metal wiring within the thus formed dual damascene pattern including the via and the trench.

Abstract: Methods of fabricating a microelectronic device having improved performance characteristics are disclosed which are characterized by using super critical fluid to perform a material removal step. In one illustrative embodiment, the method includes preparing a substrate, forming an HSQ layer covering at least a portion of the substrate, and thereafter removing at least portions of the HSQ layer using super critical fluid CO2.

Abstract: A method for surface treatment of lithium manganese oxide for positive electrodes in lithium secondary batteries is provided in which the surface of the lithium manganese oxide is coated with lithium transition metal oxides. The lithium secondary batteries using the coated lithium manganese oxide as an anode material not only solves the problems with the conventional lithium secondary batteries in regard to the lifetime of the electrodes at high temperature and the fast discharge efficiency, but also replace the conventional expensive lithium cobalt oxide to reduce the production cost.

Abstract: A sulfuric positive electrode for use in a lithium secondary battery whose life cycle is enhanced and a method for manufacturing the same are provided, in which nickel is added in sulfur that is an active material of a positive electrode. The sulfuric positive electrode manufactured by adding nickel that is an electrical conductor can solve the problem with respect to an electrode life cycle.

Abstract: Disclosed is a method for surface treatment of lithium manganese oxide for positive electrodes in lithium secondary batteries and, more particularly, a method for surface treatment of lithium manganese oxide in which the surface of the lithium manganese oxide is coated with lithium transition metal oxides. The lithium secondary batteries using the coated lithium manganese oxide as an anode material not only solves the problems with the conventional lithium secondary batteries in regard to the lifetime of the electrodes at high temperature and the fat discharge efficiency but also replace the conventional expensive lithium cobalt oxide to reduce the production cost.

Abstract: A karaoke service method by telecommunication system downloads karaoke data through a portable karaoke device and provides a karaoke service by using a radio data transmitting and receiving function of a mobile telephone network and a system thereof. In the method, it is judged whether a stored music executing mode or a new music down load mode is selected. A karaoke service server is connected to a public switched data network when the new music down load mode is selected. A file down load with respect to a selected music is requested. A file of a corresponding music selected is downloaded. According to the method, the karaoke device is connected to a karaoke service server having a simple communication protocol system and performs music files and a basic communication function and the karaoke service server reads music file information out of the data network and transmits the read music file information to the karaoke device. Accordingly, a small and inexpensive karaoke device can be realized.