Abstract: An apparatus and method for connecting to one of different types of access networks in a heterogeneous network system in which the access networks overlap each other. The apparatus and method include attempting to connect to one of said one or more access networks according to a preset priority and receiving a communication service through the access network when a connection to the access network is successful; and attempting to connect to an access network having a next priority according to the preset priority when the connection to the access network is unsuccessful.

Abstract: A system for providing communication when a mobile station moves between a wireless LAN system and a mobile communication system. A packet data service node provides a packet data service between an IP network and the mobile station when the mobile station accesses the mobile communication system. A packet control function provides the packet data service between a correspondent node connected to the IP network and the mobile station when the mobile station previously connected to the mobile communication system is connected to an access point, and provides the packet data service between the correspondent node connected to the IP network and the mobile station when the mobile station previously connected to the access point is connected to a base station system. An interworking server connected between the access point of the wireless LAN system and the packet control function of the mobile communication system.

Abstract: A data push service system and method using a heterogeneous network. The system transmits push data to a Hybrid Access Terminal (HAT) in a heterogeneous mobile communication system in which at least one circuit network overlaps with at least one packet network. The HAT can be connected to a circuit network or a packet network, and is registered in a new access network. The system includes a Packet Service & Mobility Gateway (PSMG) for acquiring access state and connection information of the HAT from the circuit network and the packet network, and generating an access network switching request upon receipt of an external request signal; and a Push Proxy Gateway (PPG) for acquiring access information of the HAT which will transmit the push data from the PSMG, and transmitting a request message to the PSMG.

Abstract: An apparatus and method for seamlessly providing voice and data services to a user through an access terminal in a mobile communication system including a heterogeneous service & mobility gateway (HSMG) for an interworking service between a circuit network and a packet network, and various access networks overlapping each other. The access terminal notifies the HSMG that a voice call is received, if the access terminal that accessed a packet network receives a voice call. The HSMG sends a direction request to a circuit network upon receiving the notification indicating that the voice call is received. The access terminal directs to the circuit network and registers a new location upon receiving the direction request. The HSMG sets up an incoming voice call to the access terminal after the registration of a new location.

Abstract: A packaged semiconductor device (a wafer-level chip scale package) containing an adhesive film containing conductive particles sandwiched between a chip with Cu-based stud bumps and a substrate containing a bond pad. Some conductive particles are sandwiched between the stud bump and bond pad to create a conductive path. The wafer level chip scale package is manufactured without the steps of dispensing solder and reflowing the solder and can optionally eliminate the use of a redistribution trace. Using such a configuration increases the reliability of the wafer-level chip scale package.

Abstract: A method of cross-paging in mobile communication systems comprises of transmitting location information of the mobile terminal from a mobile communication system to a heterogeneous mobile communication system after the mobile terminal performs location registration, requesting the mobile communication system to page the mobile terminal according to the received information in the heterogeneous mobile communication system, generating a paging message in the mobile communication system and transmitting the generated paging message from the mobile communication system to the mobile terminal.

Abstract: A method for forming a semiconductor device having improved characteristics and reliability by forming a hard mask layer on a bit line to prevent degradation of characteristics of the device in a self-alignment contact process of a storage electrode is disclosed. The hard mask layer utilizes over-hang formed at the upper portion of the bit line so as to provide sufficient protection for the bit line in the subsequent etching processes.

Abstract: A semiconductor package having an oxidation free copper wire that connects a semiconductor chip and a pad is provided. The copper wire is coated with an oxidation free layer. The copper wire provides good electrical characteristics and reliability.

Abstract: An apparatus for attaching an object semi-automatically onto a dummy wafer comprising a stage having a loading surface on which the dummy wafer rests, a pressing device for attaching the object gradually onto the dummy wafer placed on the loading surface, and a supporting device for placing the object in a position spaced apart from the loading surface.

Abstract: A wafer level chip scale package having stud bumps and a method for fabricating the same are described. The wafer level chip scale package includes a silicon substrate having a passivation layer and a chip pad on its top surface; a stud bump being formed on the chip pad and encircled by a first insulating layer; a re-distributed line (RDL) pattern being formed on the same horizontal surface as the first insulating layer and the stud bump, the RDL pattern for connecting the stud bump and a solder bump; a second insulating layer for insulating the RDL pattern so that a portion of the RDL pattern that is connected with the solder bump is exposed; and the solder bump being attached to the exposed portion if the RDL pattern.

Abstract: A semiconductor device manufacturing apparatus using plasma and a thin film forming method using the apparatus. The apparatus comprises a chamber provided with an inlet and an outlet of gas, the chamber having an upper part with a dome configuration; a susceptor provided in the chamber to permit a wafer to be placed thereon; and a plasma electrode to which RF power is applied to form plasma in the chamber; wherein the plasma electrode has a dome configuration to cover the upper part, and wherein the upper polar part of the electrode is cut horizontally to form an opening. According to the present invention, it is possible to form thin film having not only good thickness uniformity but also excellent film quality.

Abstract: An apparatus for attaching an object semi-automatically onto a dummy wafer comprising a stage having a loading surface on which the dummy wafer rests, a pressing device for attaching the object gradually onto the dummy wafer placed on the loading surface, and a supporting device for placing the object in a position spaced apart from the loading surface.

Abstract: A method of forming a silicon nitride thin film by using a PECVD process, in which a silicon nitride thin film is formed according to the PECVD process a temperature range of about 550 to 700° C. by using plasma maintained by a high frequency power in the range of about 200 to 1000 W. Plasma can be generated by using a mixed gas of SiH4, NH3 and N2. According to the invention, a hot temperature process is associated with the PECVD process so that the silicon nitride thin film of the invention can be free from problems of the silicon nitride thin films formed by the PECVD process and the LPCVD process.

Abstract: Generally, after etching process for gate electrode patterning, oxidation process is performed to compensate for etching damage. There is provided a method for forming a gate electrode of a semiconductor device, which prevents the metal layer comprised of the gate electrode for being oxidized in such an oxidation process. In the present invention, a polysilicon layer is etched to form a gate electrode pattern and re-oxidation process is performed to compensate for the etching damage. After this, an inter-layer insulating layer is formed over the entire structure and partially removed so as to expose the polysilicon layer. A part of the polysilicon layer is then selectively removed to form an opening in the inter-layer insulating layer. Here, the other part of the polysilicon layer, which will be connected to a metal layer later, is exposed through the opening. The metal layer is then buried within the opening to complete the formation of the gate electrode made of poly-metal structure.