Abstract: The described technology relates generally to a thin film transistor comprising a gate electrode, a semiconductor layer and source/drain electrode, wherein the source/drain electrode is disposed in a range of a region in which the semiconductor layer is formed. Therefore, the present embodiments can provide a thin film transistor in which reliability is excellent because a change amount of threshold voltage is small.

Abstract: A method of manufacturing a thin film transistor and a thin film transistor, the method including sequentially forming a gate insulating layer, an amorphous silicon layer and an insulating layer on an entire top surface of a substrate having a gate electrode; patterning the insulating layer to form an etch stopper; and patterning the amorphous silicon layer to form a semiconductor layer.

Abstract: In an organic light emitting diode (OLED) display and a manufacturing method thereof, the OLED display includes a substrate main body; an insulation layer pattern formed on the substrate main body, and including a first thickness layer and a second thickness layer thinner than the first thickness layer; a metal catalyst that is scattered on the first thickness layer of the insulation layer pattern; and a polycrystalline semiconductor layer formed on the insulation layer pattern, and divided into a first crystal area corresponding to the first thickness layer and to a portion of the second thickness layer adjacent to the first thickness layer and a second crystal area corresponding to the remaining part of the second thickness layer. The first crystal area of the polycrystalline semiconductor layer is crystallized through the metal catalyst, and the second crystal area of the polycrystalline semiconductor layer is solid phase crystallized.

Abstract: An organic light emitting diode display device and a method of manufacturing thereof, the device including a substrate, the substrate including a pixel part and a circuit part; a first semiconductor layer and a second semiconductor layer on the pixel part of the substrate; a gate insulating layer on an entire surface of the substrate; gate electrodes on the gate insulating layer, the gate electrodes corresponding to the first semiconductor layer and the second semiconductor layer, respectively; source/drain electrodes insulated from the gate electrodes, the source/drain electrodes being connected to the first and second semiconductor layers, respectively; a first electrode connected to the source/drain electrodes of the first semiconductor layer; an organic layer on the first electrode; a second layer on the organic layer; and a metal catalyst layer under the first semiconductor layer.

Abstract: An organic light emitting diode (OLED) display device and a method of fabricating the same are disclosed.

Abstract: A thin film transistor (TFT) and an organic light emitting display device having the same are disclosed. In one embodiment, a TFT includes a gate electrode formed on a substrate. A gate insulating layer is formed on the substrate having the gate electrode. An active layer is formed on the gate insulating layer. A source electrode is formed over the active layer. A drain electrode is formed to substantially surround at least three surfaces of the source electrode on the active layer.

Abstract: The present invention relates to an organic light emitting device and a manufacturing method thereof. An organic light emitting device includes a first substrate, a thin film structure disposed on the first substrate, a second substrate comprising an inner surface and an outer surface, a first sealing member disposed between the first substrate and the second substrate, the first sealing member comprising an inner surface and an outer surface, and a second sealing member disposed on the outer surface of the second substrate.

Abstract: A thin film transistor substrate that includes a substrate, first and second gate electrodes that are formed on the substrate, a gate insulating layer that is formed on the first and second gate electrodes, a first semiconductor and a second semiconductor that are formed on the gate insulating layer, and that overlap the first gate electrode and the second gate electrode, respectively, a first source electrode and a first drain electrode that are formed on the first semiconductor, and positioned opposed to and spaced from each other, a source electrode connected to the first drain electrode and a second drain electrode positioned opposed to and spaced from the second source electrode, wherein the second source and second drain electrodes are formed on the second semiconductor, and a pixel electrode that is electrically connected to the second drain electrode, a method of manufacturing the same, and a display apparatus having the same.

Abstract: There is provided an automatic sequential sampler for roof-top runoff of rainwater, which comprises: a sensing part, a controlling part and a sampling part, and more particularly, which takes samples of rainwater, at regular intervals, by sensing whether it rains and controlling the rotation and stop of a sample bottle shelf in the sampling part, using a timer and a counter.

Abstract: In a method of manufacturing a thin film transistor substrate, a semiconductor pattern is formed on a substrate, a first etch stop layer and a second etch stop layer are sequentially formed on the semiconductor pattern, and the second etch stop layer and the first etch stop layer are sequentially patterned to form a second etch stop pattern and a first etch stop pattern. Thus, when the second etch stop layer is patterned using an etchant, the first etch stop layer covers the semiconductor pattern, thereby preventing the semiconductor pattern from being etched by the etchant.

Abstract: A thin film transistor according to one or more embodiments of the present invention includes: an insulation substrate; a gate electrode formed on the substrate; a gate insulating layer formed on the gate electrode; a semiconductor formed on the gate insulating layer and having a pair of openings facing each other; ohmic contact layers formed in the openings and including a conductive impurity; and a source electrode and a drain electrode in contact with their respective ohmic contact layers. An organic light emitting device in accordance with an embodiment includes: a first signal line and a second signal line intersecting each other on an insulation substrate; a switching thin film transistor connected to the first signal line and the second signal line; a driving thin film transistor connected to the switching thin film transistor; and a light emitting diode (LED) connected to the driving thin film transistor.

Abstract: A liquid crystal display (LCD) apparatus and a method of manufacturing the same include a seal line having two protrusions, one of the protrusions having a liquid crystal (LC) injection hole. Moreover, the LCD apparatus having the seal line constitutes a closed loop. The display apparatus and the manufacturing method thereof increase production yields because the number of apparatus substrates for the display apparatus obtained from a mother substrate is increased by minimizing a distance between two adjacent apparatus substrates on the mother substrate. The method of manufacturing an exemplary LCD apparatus includes a one drop filling method or a vacuum injection method.

Abstract: Solid state image sensor suitable for enhancing sensitivity of charge coupled devices (CCDs) using phase shift of light, and method for fabricating the same, the solid state image sensor including a plurality of photodiodes for generating image charges from incident lights, a plurality of charge coupled devices provided between the photodiodes for transmitting the image charges in one direction, a first flat layer formed on an entire surface of the photodiodes and the charge coupled devices, a plurality of color filter layers formed on the first flat layer to be in correspondence to the photodiodes, a plurality of black layers formed on the first flat layer between the color filter layers, a plurality of phase shift layers selectively formed on the color filter layers to be in correspondence to the photodiodes alternately, a second flat layer formed on an entire surface including the phase shift layers, and a plurality of microlenses formed on the second flat layer to be in correspondence to the photodiodes.

Abstract: A solid-state image sensor and a fabricating method thereof in which poly gates in a horizontal charge coupled device (hereinafter referred to as HCCD) are made to have different lengths to omit a barrier ion implanting process step, thus simplifying the entire process and maximizing the charge-transferring efficiency are disclosed, the solid-state image sensor having an HCCD and VCCDs including a well region of a second conductivity type formed in a semiconductor substrate of a first conductivity type; a HCCD of the first conductivity type formed on the well region of the second conductivity type; and a plurality of polygate electrodes having sequentially different lengths repeatedly formed on the semiconductor substrate.

Abstract: A solid state image sensor according to the present invention includes a p-type conductivity type well formed in a surface of an n-type conductivity type semiconductor substrate in which a photoelectric conversion region is defined. A photoelectric conversion device (i.e., photodiode) is formed of a PD-N region and a PD-P region in a surface of the p-type conductivity well in the photoelectric conversion region, for converting a signal of light to an electrical signal. A vertical charge transfer region is formed in a surface of the p-type conductivity well in which the photodiode is not formed, and a channel stop layer is formed in a surface of the p-type conductivity well around the PD-N region except for a region between one side of the photodiode and the vertical charge transfer region. A gate insulating film is formed on the semiconductor substrate except for the photodiode, and a transfer gate is formed on the gate insulating film.

Abstract: A solid state image sensor according to the present invention includes a p-type conductivity type well formed in a surface of an n-type conductivity type semiconductor substrate in which a photoelectric conversion region is defined. A photoelectric conversion device (i.e., photodiode) is formed of a PD-N region and a PD-P region in a surface of the p-type conductivity well in the photoelectric conversion region, for converting a signal of light to an electrical signal. A vertical charge transfer region is formed in a surface of the p-type conductivity well in which the photodiode is not formed, and a channel stop layer is formed in a surface of the p-type conductivity well around the PD-N region except for a region between one side of the photodiode and the vertical charge transfer region. A gate insulating film is formed on the semiconductor substrate except for the photodiode, and a transfer gate is formed on the gate insulating film.

Abstract: A charge coupled device is disclosed including: a well formed in a substrate, the well having a conductivity opposite to that of the substrate; a first conductivity type of BCCD region formed on the well; a first lightly doped impurity region formed in a predetermined portion of the first conductivity type of BCCD region; a heavily doped impurity region formed in a predetermined portion of the BCCD region, the heavily doped impurity region having a predetermined distance from the first lightly doped impurity region; a second lightly doped impurity region formed between the first lightly doped impurity region and heavily doped impurity region; a first polysilicon gate formed over a portion of the BCCD region, placed between the first lightly doped impurity region and heavily doped impurity region; and a second polysilicon gate formed over the first lightly doped impurity region. The realization of high speed CCD and simplification of the circuit configuration can be obtained by using one-phase clocking.

Abstract: A solid-state image sensor and a fabricating method thereof in which poly gates in a horizontal charge coupled device (hereinafter referred to as HCCD) are made to have different lengths to omit a barrier ion implanting process step, thus simplifying the entire process and maximizing the charge-transferring efficiency are disclosed, the solid-state image sensor having an HCCD and VCCDs including a well region of a second conductivity type formed in a semiconductor substrate of a first conductivity type; a HCCD of the first conductivity type formed on the well region of the second conductivity type; and a plurality of polygate electrodes having sequentially different lengths repeatedly formed on the semiconductor substrate.

Abstract: A charge coupled device is disclosed including: a well formed in a substrate, the well having a conductivity opposite to that of the substrate; a first conductivity type of BCCD region formed on the well; a first lightly doped impurity region formed in a predetermined portion of the first conductivity type of BCCD region; a heavily doped impurity region formed in a predetermined portion of the BCCD region, the heavily doped impurity region having a predetermined distance from the first lightly doped impurity region; a second lightly doped impurity region formed between the first lightly doped impurity region and heavily doped impurity region; a first polysilicon gate formed over a portion of the BCCD region, placed between the first lightly doped impurity region and heavily doped impurity region; and a second polysilicon gate formed over the first lightly doped impurity region. The realization of high speed CCD and simplification of the circuit configuration can be obtained by using one-phase clocking.

Abstract: In a signal processing method for use in a three-dimensional computer graphics system, in order to increase the processing speed between the raster engine and a frame buffer, the frame buffer is accessed by an interleaving method and a Z-value comparison is performed in a Z-buffer of the frame buffer. The bandwidth of the frame buffer can be improved by executing a modify cycle in a memory.