Abstract: An organic light emitting display device includes a substrate including a light-emitting region and a transparent region, a transistor disposed in the light-emitting region and including a gate electrode, a source electrode and a drain electrode overlapping the gate electrode, a capacitor disposed in the light-emitting region and disposed adjacent to the transistor and including a first capacitor electrode and a second capacitor electrode overlapping the first capacitor electrode, and a plurality of light-blocking patterns partially overlapping the gate electrode, the source electrode or the drain electrode and disposed on a different layer as a layer the gate electrode, the source electrode or the drain electrode are disposed.

Abstract: A polymerizable liquid crystal compound is represented by Chemical Formula 1: wherein, in Chemical Formula 1 groups and variables are the same as defined in the detailed description.

Abstract: Provided herein is an optical module including an optical bench having a first step with a first depth and a second step with a second depth that is smaller than the first depth; a silicon carrier disposed above the first step, and where at least one semiconductor chip is installed; an AWG chip (Arrayed Waveguide Grating chip) secured to the second step, extends up to the first step, and is chip-to-chip bonded with the silicon carrier above the first step; a lens disposed on an upper surface of the optical bench where the first step and the second step are not formed; and a metal package surrounding the optical bench, silicon carrier, AWG chip and lens, wherein at one side of the metal package, a double slit that includes an upper slit and a lower slit are formed, a DC FPCB (Direct Current FPCB) extends from outside towards inside the metal package through the upper slit and is secured to a support formed on an inner surface of the upper slit, and an RF FPCB (Radio Frequency FPCB) extends from outside towards

Abstract: Provided are a metal structure catalyst and a method of preparing the same. Particularly, the method includes forming a metal precipitate on a metal support by contact of a mixed solution including a precursor of a metal catalyst and a precipitating agent with the metal support, and forming metal particles by thermally treating and reducing the metal precipitate formed on the metal support. The metal structure catalyst includes a metal support, a metal oxide layer formed on the metal support, and metal nanoparticles formed on the metal oxide layer. In addition, the metal nanoparticles are uniform and have enhanced binding strength.

Abstract: A composition for an optical film including a liquid crystal and a polysiloxane represented by Chemical Formula 1 wherein in Chemical Formula 1, R1 to R5, L1 to L3, X, Y, Z, T1, T2, a, b, c, and d are the same as described in the detailed description.

Abstract: The present invention relates to a plate-type heat exchange reactor and a method of manufacturing thereof, and there is provided a method of manufacturing a plate-type heat exchange reactor and a plate-type heat exchange reactor manufactured in the manufacturing method, the method including the steps of preparing side surface plates respectively provided with a plurality of slits formed in parallel along a longitudinal direction; arranging two side surface plates in a vertical direction to face each other with a space therebetween; forming a plurality of fluid passage channels by inserting a plurality of fluid passage partition walls into the slits provided on the two side surface plates in parallel in a horizontal direction; and bonding the side surface plates and the fluid passage partition walls.

Abstract: A composition for an optical film, including a first liquid crystal compound represented by the following Chemical Formula 1 and a second liquid crystal compound represented by the following Chemical Formula 2, wherein a difference between a solubility parameter of the first liquid crystal compound and a solubility parameter of the second liquid crystal compound is about 2.50 to about 2.90 wherein in Chemical Formulae 1 and 2, X, R1 to R3, Z, n, m, and p are the same as described in the detailed description.

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract: An organic light emitting display device includes a substrate including a light-emitting region and a transparent region; a first transistor disposed in the light-emitting region, a second transistor disposed in the light-emitting region and disposed adjacent to the first transistor; a capacitor disposed in the light-emitting region, and disposed adjacent to the first transistor, and including a first capacitor electrode and a second capacitor electrode overlapping with the first capacitor electrode; and a pixel defining layer disposed on the first transistor, the second transistor and the capacitor, and including a first opening disposed in the light-emitting region and a second opening disposed in the transparent region, and including an opaque material.

Abstract: A thin film transistor array panel may include a channel layer including an oxide semiconductor and formed in a semiconductor layer, a source electrode formed in the semiconductor layer and connected to the channel layer at a first side, a drain electrode formed in the semiconductor layer and connected to the channel layer at an opposing second side, a pixel electrode formed in the semiconductor layer in a same portion of the semiconductor layer as the drain electrode, an insulating layer disposed on the channel layer, a gate line including a gate electrode disposed on the insulating layer, a passivation layer disposed on the source and drain electrodes, the pixel electrode, and the gate line, and a data line disposed on the passivation layer. A width of the channel layer may be substantially equal to a width of the pixel electrode in a direction parallel to the gate line.

Abstract: A composition for an optical film, including a homeotropic liquid crystal, a silane or germane compound including at least one fluorine at a terminal end thereof, and a polymerizable compound.

Abstract: Provided herein is an optical module including an optical bench having a first step with a first depth and a second step with a second depth that is smaller than the first depth; a silicon carrier disposed above the first step, and where at least one semiconductor chip is installed; an AWG chip (Arrayed Waveguide Grating chip) secured to the second step, extends up to the first step, and is chip-to-chip bonded with the silicon carrier above the first step; a lens disposed on an upper surface of the optical bench where the first step and the second step are not formed; and a metal package surrounding the optical bench, silicon carrier, AWG chip and lens, wherein at one side of the metal package, a double slit that includes an upper slit and a lower slit are formed, a DC FPCB (Direct Current FPCB) extends from outside towards inside the metal package through the upper slit and is secured to a support formed on an inner surface of the upper slit, and an RF FPCB (Radio Frequency FPCB) extends from outside towards

Abstract: A thin film transistor including a substrate; a first gate electrode on the substrate; a first insulating layer covering the substrate and the first gate electrode; a semiconductor on the first insulating layer and overlapping the first gate electrode; a second insulating layer covering the first insulating layer and the semiconductor; a second gate electrode on the second insulating layer and crossing the first gate electrode in plane; a third insulating layer covering the second gate electrode and the second insulating layer; a first source electrode and a first drain electrode on the third insulating layer and connected to the semiconductor; and a second source electrode and a second drain electrode on a same layer as the first source electrode and the first drain electrode and connected to the semiconductor.

Abstract: Disclosed are a heat exchange reactor and a method of manufacturing the same, and a method of manufacturing a heat exchange reactor includes: preparing lateral plates provided with a plurality of slits formed in parallel in a longitudinal direction; disposing two lateral plates to be spaced apart from each other while facing each other in a vertical direction; forming a plurality of flow path channels by inserting flow path partition plates into one or more slits of the two lateral plates in a horizontal direction; forming a plurality of flow path channels by inserting printed circuit heat exchange plates, which autonomously include one or more heat exchange flow paths therein, into one or more slits of the two lateral plates in a horizontal direction; and bonding the lateral plates, the flow path partition plates, and the printed circuit heat exchange plates.

Abstract: A thin film transistor array panel includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy.

Abstract: A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.

Abstract: A thin film transistor, a thin film transistor array panel including the same, and a method of manufacturing the same are provided, wherein the thin film transistor includes a channel region including an oxide semiconductor, a source region and a drain region connected to the channel region and facing each other at both sides with respect to the channel region, an insulating layer positioned on the channel region, and a gate electrode positioned on the insulating layer, wherein an edge boundary of the gate electrode and an edge boundary of the channel region are substantially aligned.

Abstract: A polarizing film including a melt-elongated film including a polyolefin and a dichroic dye represented by Chemical Formula 1: wherein in Chemical Formula 1, each group and variable is the same as defined in the detailed description.

Abstract: Provided is an optical device. The optical device includes a substrate having a waveguide region and a mounting region, a planar lightwave circuit (PLC) waveguide including a lower-clad layer and an upper-clad layer on the waveguide region of the substrate and a platform core between the lower-clad layer and the upper-clad layer, a terrace defined by etching the lower-clad layer on the mounting region of the substrate, the terrace including an interlocking part, an optical active chip mounted on the mounting region of the substrate, the optical active chip including a chip core therein, and a chip alignment mark disposed on a mounting surface of the optical active chip. The optical active chip is aligned by interlocking between the interlocking part of the terrace and the chip alignment mark of the optical active chip and mounted on the mounting region.

Abstract: There are provided a message communication device and method. A message communication device according to an exemplary embodiment includes a header modifying unit configured to modify a message header by adding additional information used together with an identity when a public key corresponding to the identity of a recipient is generated to be the message header, and a message transmitting unit configured to transmit a message including data encrypted based on the public key and the modified message header.