Abstract: An electrolyte membrane for a lithium battery, the electrolyte membrane including: a matrix including a polymerization product of a (meth)acrylate monomer composition; and a porous metal-organic framework dispersed in the matrix, wherein the metal-organic framework includes a crystalline compound including a metal ion or metal ion cluster which is chemically bound to an organic ligand, and a liquid electrolyte including a lithium salt and a nonaqueous organic solvent.

Abstract: A thin film transistor, a thin film transistor array panel including the same, and a method of manufacturing the same are provided, wherein the thin film transistor includes a channel region including an oxide semiconductor, a source region and a drain region connected to the channel region and facing each other at both sides with respect to the channel region, an insulating layer positioned on the channel region, and a gate electrode positioned on the insulating layer, wherein an edge boundary of the gate electrode and an edge boundary of the channel region are substantially aligned.

Abstract: A thin film transistor (TFT), method of manufacturing the TFT and a flat panel display having the TFT are disclosed. In one aspect, the TFT comprises a substrate and an active layer formed over the substrate, wherein the active layer is formed of oxide semiconductor, and wherein the active layer includes two opposing sides. The TFT also comprises source and drain regions formed at the opposing sides of the active layer, a first insulating layer formed over the active layer, a gate electrode formed over the active layer, a second insulating layer formed covering the first insulation layer and the gate electrode, and a first conductive layer formed on the source and drain regions and contacting the second insulating layer.

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract: A method for adjusting an amount of liquid crystal in a liquid crystal display (LCD) device includes injecting a liquid crystal into a liquid crystal receiving space. The liquid crystal receiving space is disposed between a first substrate, a second substrate that faces the first substrate, and a sealing member interposed between the first and second substrates. The method for adjusting an amount of liquid crystal in an LCD device further includes irradiating a light to a portion of the sealing member while varying an irradiating angle of the light so as to form a repair region at the sealing member that has a thickness smaller than that of the sealing member. The method for adjusting an amount of liquid crystal in an LCD device also comprises pressurizing the liquid crystal to form an opening in the repair region of the sealing member and discharge some of the liquid crystal from the liquid crystal receiving space through the opening formed in the repair region, and sealing the opening of the repair region.

Abstract: Provided is an optical module. The optical module includes: an optical bench having a first trench of a first depth and a second trench of a second depth that is lower than the first depth; a lens in the first trench of the optical bench; at least one semiconductor chip in the second trench of the optical bench; and a flexible printed circuit board covering an upper surface of the optical bench except for the first and second trenches, wherein the optical bench is a metal optical bench or a silicon optical bench.

Abstract: A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.

Abstract: The present invention relates to a plate-type heat exchange reactor and a method of manufacturing thereof, and there is provided a method of manufacturing a plate-type heat exchange reactor and a plate-type heat exchange reactor manufactured in the manufacturing method, the method including the steps of preparing side surface plates respectively provided with a plurality of slits formed in parallel along a longitudinal direction; arranging two side surface plates in a vertical direction to face each other with a space therebetween; forming a plurality of fluid passage channels by inserting a plurality of fluid passage partition walls into the slits provided on the two side surface plates in parallel in a horizontal direction; and bonding the side surface plates and the fluid passage partition walls.

Abstract: An electrolytic solution including: a magnesium salt; a non-aqueous organic solvent; and an anion receptor, wherein the anion receptor comprises at least one compound selected from the group consisting of compounds represented by Formulae 1 and 2 below: where A, m, p1, p2, p3, q1, RA, Ra, R1 through R6, and Ry are the same as described in the detailed description section.

Abstract: Provided is a transistor outline (TO)-CAN type optical module and an optical transmission apparatus including the same. The optical module includes a stem, a thermo-electric cooler (TEC) on the stem, a first sub-mount on the TEC, an optical element on the first sub-mount, a plurality of electrode lead wirings inserted from an outside to an inside of the stem and disposed adjacent to the TEC and the optical element, a second sub-mount between the electrode lead wirings and the optical element, radio frequency (RF) transmission lines on the second sub-mount, a plurality of bonding wires connecting the RF transmission lines and the optical element, and the RF transmission lines and the electrode lead wirings, and an impedance matching unit disposed around the RF transmission lines and the electrode lead wirings, and controlling impedances of the RF transmission lines and the electrode lead wires.

Abstract: Disclosed is a display substrate including a driving unit on a substrate comprising a first thin film transistor and a display unit on the substrate being adjacent to the driving unit and comprising a second thin film transistor.

Abstract: Disclosed is a transmitter optical module which includes a first package generating an optical signal; a second package bonded with the first package by using chip-to-chip bonding, having a silicon optical circuit platform structure, and amplifying the optical signal; and an optical waveguide forming a transmission path of the optical signal from the first package to the second package.

Abstract: A thin film transistor, a thin film transistor array panel including the same, and a method of manufacturing the same are provided, wherein the thin film transistor includes a channel region including an oxide semiconductor, a source region and a drain region connected to the channel region and facing each other at both sides with respect to the channel region, an insulating layer positioned on the channel region, and a gate electrode positioned on the insulating layer, wherein an edge boundary of the gate electrode and an edge boundary of the channel region are substantially aligned.

Abstract: A composition for a polarizing film including a polyolefin and a dichroic dye represented by Chemical Formula 1: wherein, in Chemical Formula 1, Ar1 to Ar3, R1, R2, and n are defined in the detailed description.

Abstract: A display substrate includes a base substrate, a switching element, a gate line, a data line and a pixel electrode. Each of the gate line and the data line includes a first metal layer, and a second metal layer directly on the first metal layer. The switching element is on the base substrate, and includes a control electrode and an input electrode or an output electrode. The control electrode includes the first metal layer and excludes the second metal layer, and extends from the gate line. The input electrode or the output electrode includes a second metal layer and excludes the first metal layer. The input electrode extends from the data line. The pixel electrode is electrically connected to the output electrode of the switching element through a first contact hole, and includes a transparent conductive layer.

Abstract: Disclosed is a transmitter optical module which includes an electro-absorption modulated laser modulating a light into an optical signal through a high-frequency electrical signal; a first sub-mount transferring the high-frequency signal to the electro-absorption modulated laser; and a second sub-mount receiving the high-frequency signal from the electro-absorption modulated laser to terminate the electro-absorption modulated laser. A length of a first wire connecting the first sub-mount and the electro-absorption modulated laser is different from a length of a second wire connecting the second sub-mount and the electro-absorption modulated laser.

Abstract: A method for producing a lithium alkali transition metal oxide for use as a positive electrode material for lithium secondary batteries by a precipitation method. The positive electrode material is a lithium alkali transition metal composite oxide and is prepared by mixing a solid state mixed with alkali and transition metal carbonate and a lithium source. The mixture is thermally treated to obtain a small amount of alkali metal residual in the lithium transition metal composite oxide cathode material.

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract: A method for adjusting an amount of liquid crystal in a liquid crystal display (LCD) device includes injecting a liquid crystal into a liquid crystal receiving space. The liquid crystal receiving space is disposed between a first substrate, a second substrate that faces the first substrate, and a sealing member interposed between the first and second substrates. The method for adjusting an amount of liquid crystal in a liquid crystal display (LCD) device further includes reducing a thickness of the sealing member at a predetermined portion of the sealing member to form a repair region, and pressurizing the liquid crystal to break the sealing member at the repair region to discharge some of the liquid crystal from the liquid crystal receiving space, so as to adjust the amount of the liquid crystal in the liquid crystal receiving space. The method for adjusting an amount of liquid crystal in a liquid crystal display (LCD) device also includes resealing the broken repair region of the sealing member.

Abstract: A thin film transistor (TFT) array substrate includes a substrate, a gate electrode, a gate line, a first data line, and a second data line on the substrate, a gate insulating layer that covers the gate electrode and the gate line and includes a first opening that exposes a portion of the first data line and a second opening that exposes a portion of the second data line, an active layer disposed on the gate insulating layer so that at least one portion of the active layer overlaps the gate electrode, a drain electrode and a source electrode that extend from opposite sides of the active layer, a pixel electrode that extends from the drain electrode, and a connection wiring that extends from the source electrode, and connects the first data line to the second data line through the first and second openings of the gate insulating layer.