Abstract: Provided is a thin film transistor on fiber and a method of manufacturing the same. The thin film transistor includes a fiber; a first electrode, a second electrode and a gate electrode formed on fiber; a channel formed between the first and second electrodes; an encapsulant encapsulating the fiber, the first, second, and gate electrodes, and an upper surface of the channel; and a gate insulating layer formed in a portion of the inner area of the encapsulant.

Abstract: A user system is provided which includes a storage device and an auxiliary power device configured to supply a power to the storage device, wherein the auxiliary power device includes a first one direction device configured to supply a supply voltage from an external power supply to the storage device, a charging unit configured to be charged by the external power supply, a second one direction device configured to selectively supply an output voltage of the charging unit to the storage device, a voltage detector configured to detect a level of the output voltage of the charging unit and to output a first control signal to the storage device, and a switching unit connected between the charging unit and the second one direction device and configured to operate in response to a second control signal from the storage device.

Abstract: A tactile sensor includes a first substrate including a plurality of first electrodes, a second substrate including a plurality of second electrodes corresponding to the plurality of first electrodes, and a dielectric substance disposed between the first substrate and the second substrate, wherein a second electrode corresponding to any one of the first electrodes is offset in one direction with respect to the any one of the first electrodes while a second electrode corresponding to another first electrode neighboring the any one of the first electrodes is offset in another direction.

Abstract: Provided is a memory device formed on a fiber. The memory device includes a lower electrode, a memory resistance layer, and an upper electrode, which are sequentially formed on a surface of the fiber. The memory resistance layer may have variable resistance properties. The memory device may further include an intermediate electrode and a switching layer formed between the memory resistance layer and the upper electrode.

Abstract: Provided is a stretchable antenna including an elastic body that is stretchable and a conductive material disposed on the elastic body. The stretchable antenna may maintain stable characteristics in spite of numerous deformations. The stretchable antenna may be used as an antenna for a wireless communication device formed on a human body or clothing.

Abstract: A textile-based stretchable energy generator is provided. The energy generator includes: flexible and stretchable first and second electrode substrates; and an energy generation layer, which is provided between the first and second electrode substrates and includes a dielectric elastomer for generating electrical energy from a transformation thereof.

Abstract: According to an example embodiment, a light-sensing apparatus may include an array of light-sensing pixels, a first gate driver, and a signal output unit. Each of the light-sensing pixels may include a light sensor transistor configured to sense light, a switch transistor configured to output a light-sensing signal from the light sensor transistor, and a conductive light-shielding film on a light-incident surface of the switch transistor. The light sensor transistor and the switch transistor may have the same oxide semiconductor transistor structure. The first gate driver may be configured to provide a gate voltage and a negative bias voltage to each of the light-sensing pixels. The signal output unit may be configured to receive the light-sensing signal from each of the light-sensing pixels and output a data signal.

Abstract: A high-voltage oxide transistor includes a substrate; a channel layer disposed on the substrate; a gate electrode disposed on the substrate to correspond to the channel layer; a source contacting a first side of the channel layer; and a drain contacting a second side of the channel layer, wherein the channel layer includes a plurality of oxide layers, and none of the plurality of oxide layers include silicon. The gate electrode may be disposed on or under the channel layer. Otherwise, the gate electrodes may be disposed respectively on and under the channel layer.

Abstract: A three-dimensional (3D) nanoplasmonic structure includes a substrate; a plurality of nanorods formed on the substrate; and a plurality of metal nanoparticles formed on surfaces of the substrate and the plurality of nanorods.

Abstract: A touch panel includes a sensing unit having a first sub sensing unit configured to output a first sensing current in response to a voltage of a first gate line and configured to reset in response to a voltage of a second gate line the first sensing current corresponding to a first touch type, and a second sub sensing unit configured to output a second sensing current in response to a voltage of a third gate line and configured to reset in response to a voltage of a fourth gate line, the second sensing current corresponding to a second touch type which is different than the first touch type, a display unit configured to generate an image voltage corresponding to image data to be displayed, in response to at least one of the voltages of the first to fourth gate lines and liquid crystal.

Abstract: A stacked memory device may include at least one memory unit and at least one peripheral circuit unit arranged either above or below the at least one memory unit. The at least one memory unit may include a memory string array, a plurality of bit lines, and a plurality of string selection pads. The memory string may include a plurality of memory strings arranged in a matrix and each of the memory strings may include a plurality of memory cells and a string selection device arranged perpendicular to a substrate. The plurality of bit lines may extend in a first direction and may be connected to ends of the plurality of memory strings. The plurality of string selection pads may be arrayed in a single line along the first direction and may be connected to the string selection devices included in the plurality of memory strings.

Abstract: A pressure sensor and a pressure sensing method are provided. The pressure sensor includes a substrate; a sensor thin film transistor (TFT) disposed on the substrate and including a gate insulating layer, wherein the gate insulating layer includes an organic matrix in which piezoelectric inorganic nano-particles are dispersed; a power unit configured to apply an alternating current (AC) signal to a gate of the sensor TFT; and a pressure sensing unit configured to obtain a remnant polarization value based on a drain current which is generated in response to the AC signal and detected by the sensor TFT, and to sense a pressure based on the remnant polarization value.

Abstract: Provided are an image sensor using a light-sensitive oxide semiconductor material as a light-sensitive device and a method of operating the image sensor for acquiring RGB values of incident light in the image sensor, the image sensor includes an array of a plurality of light-sensing cells wherein each of the light-sensing cells includes a light-sensitive oxide semiconductor layer that forms a channel region of an oxide semiconductor transistor. Electronic characteristics of the light-sensitive oxide semiconductor layer vary according to an amount of light irradiated onto the light-sensitive oxide semiconductor layer. Each of the light-sensing cells constitutes a single unit color pixel.

Abstract: A thin film transistor includes a layer structure having a gate electrode, a gate insulation layer and a channel layer. A source line may contact the channel layer, and may extend along a direction crossing over the gate electrode. The source line may partially overlap the gate electrode so that both sides of the source line overlapping the gate electrode may be entirely positioned between both sides of the gate electrode. A drain line may make contact with the channel layer and may be spaced apart from the source line by a channel length. The drain line may have a structure symmetrical to that of the source line. Overlap areas among the gate electrode, the source line and the drain line may be reduced, so that the thin film transistor may ensure a high cut-off frequency.

Abstract: A speaker includes a frame, a diaphragm disposed in a top end of the frame of the speaker and a bobbin disposed below the diaphragm. A voice coil is wound around a bottom end of the bobbin and a magnetic member, which has a groove in which the bottom end of the bobbin around which the voice coil is wound, is inserted and reciprocated in a straight line upward and downward. A central pillar is fixed to the magnetic member at a center of the bobbin and extends parallel to the movement of the bobbin. A damper supports an inner circumferential surface of the bobbin from the central pillar. The damper additionally supports an outer circumferential surface of the bobbin, from the frame, so as to allow the bobbin to reciprocate in a straight line. This results in minimization of wobble and distortion, so that accurate sound is generated.

Abstract: Photosensing transistors, display panels employing a photosensing transistor, and methods of manufacturing the same, include a gate layer, a gate insulation layer on the gate layer, a channel layer on the gate insulation layer, an etch stop layer on a partial area of the channel layer, a source and a drain on the channel layer and separated from each other with the etch stop layer being interposed between the source and the drain, and a passivation layer covering the source, the drain, and the etch stop layer, wherein the source is separated from the etch stop layer.

Abstract: A method of determining vulnerability of web application comprises: selecting fixed parameters from parameters of URL link extracted from a website; determining whether a process of determining vulnerability for the selected fixed parameter is completed or not; inserting an attack pattern for each attack type to an input value for the selected fixed parameter, when the process of determining vulnerability for the selected fixed parameter is not completed; and determining vulnerability of the selected fixed parameter by each attack type through an analysis of response to an input of URL link with the attack pattern inserted thereinto.

Abstract: A thin film transistor is provided. The transistor includes a gate; a first passivation layer covering the gate; a channel layer disposed on the first passivation layer; a source and a drain that are disposed on the first passivation layer and contact two sides of the channel layer; a second passivation layer covering the channel layer, the source, and the drain; first and second transparent electrode layers that are disposed on the second passivation layer and spaced apart from each other; a first transparent conductive via that penetrates the second passivation layer and connects the source and the first transparent electrode layer; and a second transparent conductive via that penetrates the second passivation layer and connects the drain and the second transparent electrode layer. A cross-sectional area of the gate is larger than a cross-sectional area of the channel layer, the source, and the drain combined.

Abstract: A high-voltage oxide transistor includes a substrate; a channel layer disposed on the substrate; a gate electrode disposed on the substrate to correspond to the channel layer; a source contacting a first side of the channel layer; and a drain contacting a second side of the channel layer, wherein the channel layer includes a plurality of oxide layers, and none of the plurality of oxide layers include silicon. The gate electrode may be disposed on or under the channel layer. Otherwise, the gate electrodes may be disposed respectively on and under the channel layer.

Abstract: An image sensor according to example embodiments may include a plurality of light-sensitive transparent oxide semiconductor layers as light-sensing layers. The light-sensing layers may be stacked in one unit pixel region.