Abstract: An optical touch screen apparatus that includes a display pixel including a display cell and a driving transistor, the display cell configured to display an image and the driving transistor configured to turn on or off the display cell, the driving transistor having a double gate structure; and a light-sensing pixel including a light-sensing transistor and a switch transistor, the light-sensing transistor configured to sense incident light and the switch transistor configured to output data from the light-sensing transistor, the switch transistor having the double gate structure, wherein the double gate structure is a structure in which a bottom gate and a top gate are arranged such that a channel layer is disposed therebetween. The top gate may be formed together when forming a transparent electrode in the pixel, and thus even when the top gate is further included, the number of manufacturing processes is not increased.

Abstract: Transistors and methods of manufacturing the same. A transistor may be an oxide thin film transistor (TFT) with a self-aligned top gate structure. The transistor may include a gate insulating layer between a channel region and a gate electrode that extends from two sides of the gate electrode. The gate insulating layer may cover at least a portion of source and drain regions.

Abstract: In one embodiment, a light-sensing apparatus includes a light-sensing pixel array that has a plurality of light-sensing pixels arranged in rows and columns; and a gate driver configured to provide the light-sensing pixels with a gate voltage and a reset signal that have inverted phases. Each of the light-sensing pixels includes a light sensor transistor configured to sense light and a switch transistor configured to output a light-sensing signal from the light-sensor transistor. The gate driver includes a plurality of gate lines connected to gates of the switch transistors, a plurality of reset lines connected to gates of the light sensor transistors, and a plurality of phase inverters each connected between a corresponding reset line and a gate line. Thus, when a gate voltage is applied to one of the plurality of gate lines, a reset signal with an inversed phase to the gate voltage may be applied to a corresponding reset line.

Abstract: Optical touch screen apparatuses with remote sensing and touch sensing by using a light sensor transistor including an oxide semiconductor transistor. The optical touch screen apparatus includes a pixel array of a plurality of sensing pixels arranged in a plurality of rows and a plurality of columns. Each of the sensing pixels includes a light sensing pixel for sensing light that is irradiated by an external light source and a touch sensing pixel for sensing display light that is reflected by a screen touch. The light sensing pixel includes a first light sensor transistor and a first switch transistor connected each other in series, and the touch sensing pixel includes a second light sensor transistor and a second switch transistor connected each other in series.

Abstract: A light-sensing apparatus in which a light sensor transistor in a light-sensing pixel is formed of an oxide semiconductor transistor for sensing light, a method of driving the light-sensing apparatus, and an optical touch screen apparatus including the light-sensing apparatus. The light-sensing apparatus includes a light-sensing pixel array having a plurality of light-sensing pixels arranged in rows and columns, and a plurality of gate lines which are arranged in a row direction and respectively provide a gate voltage to the light-sensing pixel. Each of the light-sensing pixels includes a light sensor transistor for sensing light and a switch transistor for outputting a light-sensing signal from the light sensor transistor, and gates of the light sensor transistors of the light-sensing pixels arranged in an arbitrary row are connected to a gate line arranged in a row previous or next to the arbitrary row.

Abstract: The semiconductor device includes an insulating substrate, a channel layer over the insulating substrate, a gate at least partially extending from an upper surface of the channel layer into the channel layer, a source and a drain respectively at opposing sides of the gate on the channel layer, a gate insulating layer surrounding, the gate and electrically insulating the gate from the channel layer, the source, and the drain, and a variable resistance material layer between the insulating substrate and the gate.

Abstract: A transistor may include an active layer having a plurality of oxide semiconductor layers and an insulating layer disposed therebetween. The insulating layer may include a material that has higher etch selectivity with respect to at least one of the plurality of oxide semiconductor layers. The electronic device may include a first transistor and a second transistor connected to the first transistor. The second transistor may include an active layer having a different structure from that of the active layer included in the first transistor. The active layer of the second transistor may have the same structure as one of the plurality of oxide semiconductor layers constituting the active layer of the first transistor.

Abstract: Light-sensing apparatuses may include a light sensor transistor and a switching transistor in a light-sensing pixel, the transistors being oxide semiconductor transistors. In the light-sensing apparatus, the light sensor transistor and the switching transistor in the light-sensing pixel may be adjacently formed on one substrate, the switching transistor including a channel material that is relatively less light-sensitive than the light sensor transistor and is stable, and the light sensor transistor includes a channel material that is relatively light-sensitive. The light sensor transistor may include a transparent upper electrode on a surface of a channel, and a negative voltage may be applied to the transparent upper electrode, whereby a threshold voltage shift in a negative voltage direction may be prevented or reduced.

Abstract: Semiconductor devices include a gate electrode, a gate insulation layer, a first channel layer pattern, a second channel layer pattern and first and second metallic patterns. The gate electrode is on a substrate. The gate insulation layer is on the gate electrode. The first channel layer pattern is on the gate insulation layer, and has a first conductivity level. The second channel layer pattern is on the first channel layer pattern, and has a second conductivity level that is lower than the first conductivity level. The first and second metallic patterns are on the gate insulation layer and contact respective sidewalls of the first and second channel layer patterns.

Abstract: An optical touch screen apparatus in which an oxide semiconductor transistor is used as a light sensing device, and a method of driving the optical touch screen apparatus. The optical touch screen apparatus includes an array including a plurality of light sensing pixels for sensing incident light, a gate driver for providing each of the light sensing pixels with a gate voltage and a reset signal and a signal output unit for receiving a light sensing signal from each of the plurality of light sensing pixels to output a data signal. The gate driver includes a plurality of gate lines that provide a gate voltage to each of the light sensing pixels and at least one reset line that provides a reset signal to each of the light sensing pixels and is electrically connected to the plurality of light sensing pixels.

Abstract: In a simplified light sensing circuit, a light sensing apparatus including the light sensing circuit, a method of driving the light sensing apparatus, and an image acquisition apparatus and optical touch screen apparatus including the light sensing apparatus, the light sensing circuit includes an oxide semiconductor transistor including a channel layer including an oxide semiconductor material, for each pixel. The oxide semiconductor transistor is configured to operate as a light sensing device that senses light and a switch that outputs light sensing data.

Abstract: According to an example embodiment, a light-sensing apparatus may include an array of light-sensing pixels, a first gate driver, and a signal output unit. Each of the light-sensing pixels may include a light sensor transistor configured to sense light, a switch transistor configured to output a light-sensing signal from the light sensor transistor, and a conductive light-shielding film on a light-incident surface of the switch transistor. The light sensor transistor and the switch transistor may have the same oxide semiconductor transistor structure. The first gate driver may be configured to provide a gate voltage and a negative bias voltage to each of the light-sensing pixels. The signal output unit may be configured to receive the light-sensing signal from each of the light-sensing pixels and output a data signal.

Abstract: Auxiliary power supplies include a capacitor (e.g., super capacitor) and a capacitor charging circuit, which is configured to provide a charging current to a first terminal of the capacitor. Enhanced failure detection is provided by a capacitor monitoring circuit, which may be electrically coupled to at least one terminal of the capacitor. The capacitor monitoring circuit is configured to detect when the capacitor is malfunctioning in an open condition as well as when the capacitor is malfunctioning in a short condition.

Abstract: A non-volatile memory device including a metal-insulator transition (MIT) material is provided. The non-volatile memory device includes a gate stack having a tunneling layer, a charge trap layer, a blocking layer and a gate electrode formed on a substrate, wherein at least one of the tunneling layer and the blocking layer is formed of an MIT (metal-insulator transition) material.

Abstract: A method of manufacturing a CMOS transistor can be provided by forming first and second gate electrodes on a substrate and forming a gate insulation layer on the first and second gate electrodes. A semiconductor channel material having a first conductivity type can be formed on the gate insulation layer. A pair of ohmic contacts can be formed on the semiconductor channel material such that the ohmic contacts cross over both side portions of the first gate electrode, respectively. A pair of Schottky contacts can be formed on the semiconductor channel material such that the Schottky contacts cross over both side portions of the second gate electrode, respectively.

Abstract: A SONOS memory device, and a method of manufacturing the same, includes a substrate and a multifunctional device formed on the substrate. The multifunctional device performs both switching and data storing functions. The multifunctional device includes first and second impurities areas, a channel formed between the first and second impurities areas, and a stacked material formed on the channel for data storage. The stacked material for data storage is formed by sequentially stacking a tunneling oxide layer, a memory node layer in which data is stored, a blocking layer, and an electrode layer.

Abstract: A speaker includes a frame, a diaphragm disposed in a top end of the frame of the speaker and a bobbin disposed below the diaphragm A voice coil is wound around a bottom end of the bobbin and a magnetic member having a groove in which the bottom end of the bobbin around which the voice coil is wound, is inserted and reciprocated in a straight line upward and downward A central pillar is fixed to the magnetic member at a center of the bobbin and extends parallel to the movement of the bobbin. A damper supports an inner circumferential surface of the bobbin from the central pillar. The damper additionally supports an outer circumferential surface of the bobbin, from the frame, so as to allow the bobbin to reciprocate in a straight line. Support of the bobbin by the damper in both lengthwise and width directions results in minimization of wobble and distortion, so that accurate sound is generated by the speaker.

Abstract: A light sensing circuit using an oxide semiconductor transistor, a method of manufacturing the light sensing circuit, and an optical touch panel including the light sensing circuit. Because the light sensing circuit includes only one light sensor transistor and one switch transistor formed on the same substrate, a structure of the light sensing circuit is simplified. Furthermore, because the light sensor transistor and the switch transistor have the same structure, a method of manufacturing the light sensing circuit is also simplified. Also, since an optical touch panel or an image acquisition apparatus using the light sensing circuit uses the light sensing circuit having a simple structure and does not use a capacitor, the optical touch panel or the image acquisition apparatus may be made thinner and larger.

Abstract: A semiconductor device has a gate contact structure, including a semiconductor substrate, a polycrystalline silicon layer used as a gate electrode of a transistor, a middle conductive layer, a top metal layer having an opening exposing the polycrystalline silicon layer, and a contact plug directly contacting the polycrystalline silicon layer through the opening.

Abstract: Example embodiments disclose transistors, methods of manufacturing the same, and electronic devices including transistors. An active layer of a transistor may include a plurality of material layers (oxide layers) with different energy band gaps. The active layer may include a channel layer and a photo sensing layer. The photo sensing layer may have a single-layered or multi-layered structure. When the photo sensing layer has a multi-layered structure, the photo sensing layer may include a first material layer and a second material layer that are sequentially stacked on a surface of the channel layer. The first layer and the second layer may be alternately stacked one or more times.