Patents by Inventor Sang-hyeob Lee

Sang-hyeob Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190122924
    Abstract: Methods and apparatus for depositing a cobalt layer in a feature, such as, a word line formed in a substrate, are provided herein. In some embodiments, method of processing a substrate includes: exposing a substrate at a first temperature to a cobalt containing precursor to deposit a cobalt layer within a word line feature formed in the substrate, wherein the word line feature is part of a 3D NAND device; and annealing the substrate to remove contaminants from the cobalt layer and to reflow the cobalt layer into the word line feature, wherein the substrate is at a second temperature greater than the first temperature during the annealing.
    Type: Application
    Filed: December 17, 2018
    Publication date: April 25, 2019
    Inventors: JIN HEE PARK, TAE HONG HA, SANG-HYEOB LEE, THOMAS JONGWAN KWON, JAESOO AHN, XIANMIN TANG, ER-XUAN PING, SREE KESAPRAGADA
  • Patent number: 10157787
    Abstract: Methods and apparatus for depositing a cobalt layer in a feature, such as, a word line formed in a substrate, are provided herein. In some embodiments, method of processing a substrate includes: exposing a substrate at a first temperature to a cobalt containing precursor to deposit a cobalt layer within a word line feature formed in the substrate, wherein the word line feature is part of a 3D NAND device; and annealing the substrate to remove contaminants from the cobalt layer and to reflow the cobalt layer into the word line feature, wherein the substrate is at a second temperature greater than the first temperature during the annealing.
    Type: Grant
    Filed: December 19, 2016
    Date of Patent: December 18, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Jin Hee Park, Tae Hong Ha, Sang-Hyeob Lee, Thomas Jongwan Kwon, Jaesoo Ahn, Xianmin Tang, Er-Xuan Ping, Sree Kesapragada
  • Publication number: 20180237916
    Abstract: Apparatus for improving substrate temperature uniformity in a substrate processing chamber are provided herein. In some embodiments, a substrate support processing chamber may include a chamber body having a bottom portion and a sidewall having a slit valve opening to load and unload substrates, a pin lift mechanism, disposed in a pin lift mechanism opening formed in the bottom portion of the chamber body, having a plurality of substrate support pins coupled to the pin lift mechanism, a movable substrate support heater having substrate support portion and a shaft, and a cover plate disposed about the shaft of the movable substrate support, wherein the cover plate covers the pin lift mechanism and pin lift mechanism opening.
    Type: Application
    Filed: April 23, 2018
    Publication date: August 23, 2018
    Inventors: GWO-CHUAN TZU, Kazuya Daito, SANG-HYEOB LEE
  • Patent number: 9957615
    Abstract: Apparatus for improving substrate temperature uniformity in a substrate processing chamber are provided herein. In some embodiments, a substrate support processing chamber may include a chamber body having a bottom portion and a sidewall having a slit valve opening to load and unload substrates, a pin lift mechanism, disposed in a pin lift mechanism opening formed in the bottom portion of the chamber body, having a plurality of substrate support pins coupled to the pin lift mechanism, a movable substrate support heater having substrate support portion and a shaft, and a cover plate disposed about the shaft of the movable substrate support, wherein the cover plate covers the pin lift mechanism and pin lift mechanism opening.
    Type: Grant
    Filed: September 12, 2014
    Date of Patent: May 1, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Gwo-Chuan Tzu, Kazuya Daito, Sang-Hyeob Lee
  • Patent number: 9926639
    Abstract: Methods for forming barrier/seed layers for interconnect structures are provided herein. In some embodiments, a method of processing a substrate having an opening formed in a first surface of the substrate, the opening having a sidewall and a bottom surface, the method may include forming a layer comprising manganese (Mn) and at least one of ruthenium (Ru) or cobalt (Co) on the sidewall and bottom surface of the opening; and depositing a conductive material on the layer to fill the opening. In some embodiments, one of ruthenium (Ru) or cobalt (Co) is deposited on the sidewall and bottom surface of the opening. The materials may be deposited by chemical vapor deposition (CVD) or by physical vapor deposition (PVD).
    Type: Grant
    Filed: June 23, 2011
    Date of Patent: March 27, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Hoon Kim, Wei Ti Lee, Sang Ho Yu, Seshadri Ganguli, Hyoung-Chan Ha, Sang Hyeob Lee
  • Publication number: 20170178956
    Abstract: Methods and apparatus for depositing a cobalt layer in a feature, such as, a word line formed in a substrate, are provided herein. In some embodiments, method of processing a substrate includes: exposing a substrate at a first temperature to a cobalt containing precursor to deposit a cobalt layer within a word line feature formed in the substrate, wherein the word line feature is part of a 3D NAND device; and annealing the substrate to remove contaminants from the cobalt layer and to reflow the cobalt layer into the word line feature, wherein the substrate is at a second temperature greater than the first temperature during the annealing.
    Type: Application
    Filed: December 19, 2016
    Publication date: June 22, 2017
    Inventors: Jin Hee PARK, Tae Hong HA, Sang-Hyeob LEE, Thomas Jongwan KWON, Jaesoo AHN, Xianmin TANG, Er-Xuan PING, Sree KESAPRAGADA
  • Patent number: 9583385
    Abstract: A tungsten nucleation film is formed on a surface of a semiconductor substrate by alternatively providing to that surface, reducing gases and tungsten-containing gases. Each cycle of the method provides for one or more monolayers of the tungsten film. The film is conformal and has improved step coverage, even for a high aspect ratio contact hole.
    Type: Grant
    Filed: June 12, 2015
    Date of Patent: February 28, 2017
    Assignee: Novellus Systems, Inc.
    Inventors: Sang-Hyeob Lee, Joshua Collins
  • Patent number: 9458455
    Abstract: A high efficiency plant expression promoter from Capsicum annuum serine hydroxymethyl transferase gene and uses thereof. This high efficiency plant expression promoter and 5?-untranslated region (5?-UTR) from Capsicum annuum serine hydroxymethyl transferase gene, a high efficiency plant expression vector having the same, a plant transformed with the vector, a process for high efficiency expression of a foreign gene by using the vector and a transformed plant which expresses with high efficiency a foreign gene based on the process and seeds of the transformed plant.
    Type: Grant
    Filed: August 19, 2010
    Date of Patent: October 4, 2016
    Assignee: INDUSTRY FOUNDATION OF CHONNAM NATIONAL UNIVERSITY
    Inventors: Do Il Choi, Sang Hyeob Lee, Young Hee Joung
  • Patent number: 9169556
    Abstract: A method for selectively controlling deposition rate of a catalytic material during a catalytic bulk CVD deposition is disclosed herein. The method can include positioning a substrate in a processing chamber including both surface regions and gap regions, depositing a first nucleation layer comprising tungsten conformally over an exposed surface of the substrate, treating at least a portion of the first nucleation layer with activated nitrogen, wherein the activated nitrogen is deposited preferentially on the surface regions, reacting a first deposition gas comprising tungsten halide and hydrogen-containing gas to deposit a tungsten fill layer preferentially in gap regions of the substrate, reacting a nucleation gas comprising a tungsten halide to form a second nucleation layer, and reacting a second deposition gas comprising tungsten halide and a hydrogen-containing gas to deposit a tungsten field layer.
    Type: Grant
    Filed: August 15, 2013
    Date of Patent: October 27, 2015
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Kai Wu, Kiejin Park, Sang Ho Yu, Sang-Hyeob Lee, Kazuya Daito, Joshua Collins, Benjamin C. Wang
  • Publication number: 20150279732
    Abstract: A tungsten nucleation film is formed on a surface of a semiconductor substrate by alternatively providing to that surface, reducing gases and tungsten-containing gases. Each cycle of the method provides for one or more monolayers of the tungsten film. The film is conformal and has improved step coverage, even for a high aspect ratio contact hole.
    Type: Application
    Filed: June 12, 2015
    Publication date: October 1, 2015
    Inventors: Sang-Hyeob Lee, Joshua Collins
  • Patent number: 9129945
    Abstract: The invention provides a method of forming a film stack on a substrate, comprising depositing a tungsten nitride layer on the substrate, subjecting the substrate to a nitridation treatment using active nitrogen species from a remote plasma, and depositing a conductive bulk layer directly on the tungsten nitride layer without depositing a tungsten nucleation layer on the tungsten nitride layer as a growth site for tungsten.
    Type: Grant
    Filed: March 24, 2010
    Date of Patent: September 8, 2015
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Sang-Hyeob Lee, Sang Ho Yu, Wei Ti Lee, Seshadri Ganguli, Hyoung-Chan Ha, Hoon Kim
  • Patent number: 9076843
    Abstract: A tungsten nucleation film is formed on a surface of a semiconductor substrate by alternatively providing to that surface, reducing gases and tungsten-containing gases. Each cycle of the method provides for one or more monolayers of the tungsten film. The film is conformal and has improved step coverage, even for a high aspect ratio contact hole.
    Type: Grant
    Filed: October 2, 2012
    Date of Patent: July 7, 2015
    Assignee: Novellus Systems, Inc.
    Inventors: Sang-Hyeob Lee, Joshua Collins
  • Publication number: 20150075432
    Abstract: Apparatus for improving substrate temperature uniformity in a substrate processing chamber are provided herein. In some embodiments, a substrate support processing chamber may include a chamber body having a bottom portion and a sidewall having a slit valve opening to load and unload substrates, a pin lift mechanism, disposed in a pin lift mechanism opening formed in the bottom portion of the chamber body, having a plurality of substrate support pins coupled to the pin lift mechanism, a movable substrate support heater having substrate support portion and a shaft, and a cover plate disposed about the shaft of the movable substrate support, wherein the cover plate covers the pin lift mechanism and pin lift mechanism opening.
    Type: Application
    Filed: September 12, 2014
    Publication date: March 19, 2015
    Inventors: GWO-CHUAN TZU, Kazuya Daito, SANG-HYEOB LEE
  • Publication number: 20140373192
    Abstract: A high efficiency plant expression promoter from Capsicum annuum serine hydroxymethyl transferase gene and uses thereof. This high efficiency plant expression promoter and 5?-untranslated region (5?-UTR) from Capsicum annular, serine hydroxymethyl transferase gene, a high efficiency plant expression vector having the same, a plant transformed with said vector, a process for high efficiency expression of a foreign gene by using said vector and a transformed plant which expresses with high efficiency a foreign gene based on said process and seeds of the transformed plant.
    Type: Application
    Filed: August 19, 2010
    Publication date: December 18, 2014
    Applicant: INDUSTRY FOUNDATION OF CHONNAM NATIONAL UNIVERSITY
    Inventors: Young Hee Joung, Do Il Choi, Sang Hyeob Lee
  • Patent number: 8900999
    Abstract: A method of filling a feature in a substrate with tungsten without forming a seam is presented. The tungsten is deposited by a thermal chemical vapor deposition (CVD) process using hydrogen (H2) and tungsten hexafluoride (WF6) precursor gases. The H2 to WF6 flow rate ratio is greater than 40 to 1, such as from 40 to 1 to 100 to 1. The substrate temperature during deposition is less than 300 degrees Celsius (° C.) and the processing pressure during deposition is greater than 300 Torr.
    Type: Grant
    Filed: September 25, 2013
    Date of Patent: December 2, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Kai Wu, Sang-Hyeob Lee, Joshua Collins, Kiejin Park
  • Patent number: 8865594
    Abstract: The invention provides a method of forming a film stack on a substrate, comprising performing a silicon containing gas soak process to form a silicon containing layer over the substrate, reacting with the silicon containing layer to form a tungsten silicide layer on the substrate, depositing a tungsten nitride layer on the substrate, subjecting the substrate to a nitridation treatment using active nitrogen species from a remote plasma, and depositing a conductive bulk layer directly on the tungsten nitride layer.
    Type: Grant
    Filed: March 8, 2012
    Date of Patent: October 21, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Sang-Hyeob Lee, Sang Ho Yu, Kai Wu
  • Patent number: 8835311
    Abstract: Embodiments of the invention provide an improved process for depositing tungsten-containing materials. In one embodiment, the method for forming a tungsten-containing material on a substrate includes forming an adhesion layer containing titanium nitride on a dielectric layer disposed on a substrate, forming a tungsten nitride intermediate layer on the adhesion layer, wherein the tungsten nitride intermediate layer contains tungsten nitride and carbon. The method further includes forming a tungsten barrier layer (e.g., tungsten or tungsten-carbon material) from the tungsten nitride intermediate layer by thermal decomposition during a thermal annealing process (e.g., temperature from about 700° C. to less than 1,000° C.).
    Type: Grant
    Filed: December 31, 2013
    Date of Patent: September 16, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Joshua Collins, Murali K. Narasimhan, Jingjing Liu, Sang-Hyeob Lee, Kai Wu, Avgerinos V. Gelatos
  • Patent number: 8821637
    Abstract: Embodiments of the invention provide apparatuses for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a processing chamber is provided which includes a lid assembly containing a lid plate, a showerhead, a mixing cavity, a distribution cavity, and a resistive heating element contained within the lid plate. In one example, the resistive heating element is configured to provide the lid plate at a temperature within a range from about 120° C. to about 180° C., preferably, from about 140° C. to about 160° C., more preferably, from about 145° C. to about 155° C. The mixing cavity may be in fluid communication with a tungsten precursor source containing tungsten hexafluoride and a nitrogen precursor source containing ammonia. In some embodiments, a single processing chamber may be used to deposit metallic tungsten and tungsten nitride materials by CVD processes.
    Type: Grant
    Filed: January 29, 2008
    Date of Patent: September 2, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Avgerinos V. Gelatos, Sang-Hyeob Lee, Xiaoxiong Yuan, Salvador P. Umotoy, Yu Chang, Gwo-Chuan Tzu, Emily Renuart, Jing Lin, Wing-Cheong Lai, Sang Q. Le
  • Publication number: 20140187038
    Abstract: Embodiments of the invention provide an improved process for depositing tungsten-containing materials. In one embodiment, the method for forming a tungsten-containing material on a substrate includes forming an adhesion layer containing titanium nitride on a dielectric layer disposed on a substrate, forming a tungsten nitride intermediate layer on the adhesion layer, wherein the tungsten nitride intermediate layer contains tungsten nitride and carbon. The method further includes forming a tungsten barrier layer (e.g., tungsten or tungsten-carbon material) from the tungsten nitride intermediate layer by thermal decomposition during a thermal annealing process (e.g., temperature from about 700° C. to less than 1,000° C.).
    Type: Application
    Filed: December 31, 2013
    Publication date: July 3, 2014
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Joshua COLLINS, Murali K. NARASIMHAN, Jingjing LIU, Sang-Hyeob LEE, Kai WU, Avgerinos V. GELATOS
  • Patent number: 8729340
    Abstract: The present invention relates to a Solanum lycopersicum histidine decarboxylase-2 (SlHD-2) gene-derived fruit-specific expression promoter, to a 5? untranslated region (5?-UTR), to a (5?UTR), —specific expression vector comprising same, to a method for the fruit-specific expression of an exotic gene using the expression vector, to a plant transformed with the expression vector, and to a seed thereof. According to the present invention, a gene introduced from a transformed plant can be specifically expressed fruit tissue as compared to the widely used conventional Cauliflower mosaic virus-derived CaMV 35S promoter which induces the expression of an exotic gene in the whole tissue. Further, the present invention can be valuably used in the development of a transformed plant, which seeks to produce valuable substances from fruit.
    Type: Grant
    Filed: February 11, 2010
    Date of Patent: May 20, 2014
    Assignee: Industry Foundation of Chonnam National University
    Inventors: Young Hee Joung, Ah Young Kim, Sang Hyeob Lee