Patents by Inventor Sang Hyouk Choi

Sang Hyouk Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10682384
    Abstract: The present invention relates to a composition comprising a natural complex extract. It is confirmed that the composition has synergistic effects on antioxidant activity, immune enhancement, whitening, anti-wrinkle and collagenase inhibition with low cytotoxicity, and therefore, the composition is suitable for uses of antioxidation, immune, whitening and skin anti-wrinkle.
    Type: Grant
    Filed: January 10, 2018
    Date of Patent: June 16, 2020
    Assignees: COSMAX NS, INC., COSMAX NBT, INC.
    Inventors: Jin Hak Kim, Kwang Soo Baek, Yong Jun Jo, Hyeon Yeong Ahn, Young Min Park, Hyun Ji Kim, Jae Seok Shim, Su Young Choi, Jin Woo Lee, Sang Woo Kim, Mann-Seok Yoon, Jin Hyouk Kwon
  • Publication number: 20190308745
    Abstract: The present invention provides a method of controlling an unmanned aerial vehicle by a system for controlling a mission of the unmanned aerial vehicle on the basis of a user position. Herein the method includes acquiring information related to a position of the terminal; performing authentication for the unmanned aerial vehicle on the basis of the information related to the position of the terminal; and, when the authentication is completed, transmitting the information related to the position of the terminal to the unmanned aerial vehicle.
    Type: Application
    Filed: April 4, 2019
    Publication date: October 10, 2019
    Applicant: Electronics and Telecommunications Research Instit ute
    Inventors: Myung Seok KI, Sang Hyouk CHOI, Yun Su BOK, Ji Hwan SON, Jeong Hwan LEE, Ji Hun CHA, Jae Young AHN
  • Patent number: 10389023
    Abstract: A method for receiving a signal by using M multiple beams in a multi-antenna system including N antenna elements, is provided in and embodiment of the present application. The method includes setting, by M beams, a beam direction for the M beams and a modulation frequency for frequency modulation of a beam response and generating the M beams according to the beam direction and the modulation frequency set by the beams. M beam responses are generated for a receiving signal by using the generated M beams and the generated M beam responses are frequency modulated by using the modulation frequency set by the beams. The frequency-modulated M beam responses are band-pass filtered so as to separate the M beam responses and the separated M beam responses are respectively demodulated.
    Type: Grant
    Filed: November 6, 2014
    Date of Patent: August 20, 2019
    Assignees: Samsung Electronics Co., Ltd., Korea Advanced Institute of Science and Technology
    Inventors: Sang-Hyouk Choi, Yong-Hoon Kim, Hee-Seong Yang, Joo-Hwan Chun
  • Publication number: 20190227159
    Abstract: Disclosed is a method of sensing illegal flight of a low-flying drone. Here, the method of sensing illegal flight includes: changing a direction of a beam on the basis of a preset period; and detecting an object by using the beam changed on the basis of the preset period. Here, the direction of the beam is changed on the basis of a first direction and a second direction. The first direction is changed on the basis of conversion of a center frequency, and the second direction is changed on the basis of a phase and a particular value.
    Type: Application
    Filed: January 22, 2019
    Publication date: July 25, 2019
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Sang Hyouk CHOI, Jae Young AHN, Man Seok UHM, Jong Suk CHAE
  • Patent number: 10269463
    Abstract: Systems, methods, and devices of the various embodiments described herein enable an energy conversion system comprising a radioactive element for generating conduction-band electrons in an avalanche cell and generating heat, wherein the conduction-band electrons are provided to an anode to generate avalanche cell power, and the heat is provided to a thermoelectric generator to generate thermoelectric power. In an embodiment, the avalanche cell is irradiated with gamma rays, which excite electrons within the avalanche cell, generating a current. In an additional embodiment, the thermoelectric power and avalanche cell power can comprise a dual power system.
    Type: Grant
    Filed: February 3, 2016
    Date of Patent: April 23, 2019
    Assignee: The United States of America as represented by the Administrator of NASA
    Inventors: Sang Hyouk Choi, Kunik Lee
  • Patent number: 10256305
    Abstract: An electronic device includes a trigonal crystal substrate defining a (0001) C-plane. The substrate may comprise Sapphire or other suitable material. A plurality of rhombohedrally aligned SiGe (111)-oriented crystals are disposed on the (0001) C-plane of the crystal substrate. A first region of material is disposed on the rhombohedrally aligned SiGe layer. The first region comprises an intrinsic or doped Si, Ge, or SiGe layer. The first region can be layered between two secondary regions comprising n+doped SiGe or n+doped Ge, whereby the first region collects electrons from the two secondary regions.
    Type: Grant
    Filed: March 3, 2017
    Date of Patent: April 9, 2019
    Assignee: The United States of America as represented by the Administrator of NASA
    Inventors: Sang Hyouk Choi, Yeonjoon Park, Glen C. King, Hyun-Jung Kim, Kunik Lee
  • Patent number: 10096472
    Abstract: Various embodiments may provide a low temperature (i.e., less than 850° C.) method of Silicon-Germanium (SiGe) on sapphire (Al2O3) (SiGe/sapphire) growth that may produce a single crystal film with less thermal loading effort to the substrate than conventional high temperature (i.e., temperatures above 850° C.) methods. The various embodiments may alleviate the thermal loading requirement of the substrate, which in conventional high temperature (i.e., temperatures above 850° C.) methods had surface temperatures within the range of 850° C.-900° C. The various embodiments may provide a new thermal loading requirement of the sapphire substrate for growing single crystal SiGe on the sapphire substrate in the range of about 450° C. to about 500° C.
    Type: Grant
    Filed: December 21, 2016
    Date of Patent: October 9, 2018
    Assignee: The United States of America as represented by the Administrator of NASA
    Inventors: Sang Hyouk Choi, Adam J. Duzik
  • Patent number: 9835570
    Abstract: An X-ray defraction (XRD) characterization method for sigma=3 twin defects in cubic semiconductor (100) wafers includes a concentration measurement method and a wafer mapping method for any cubic tetrahedral semiconductor wafers including GaAs (100) wafers and Si (100) wafers. The methods use the cubic semiconductor's (004) pole figure in order to detect sigma=3/{111} twin defects. The XRD methods are applicable to any (100) wafers of tetrahedral cubic semiconductors in the diamond structure (Si, Ge, C) and cubic zinc-blend structure (InP, InGaAs, CdTe, ZnSe, and so on) with various growth methods such as Liquid Encapsulated Czochralski (LEC) growth, Molecular Beam Epitaxy (MBE), Organometallic Vapor Phase Epitaxy (OMVPE), Czochralski growth and Metal Organic Chemical Vapor Deposition (MOCVD) growth.
    Type: Grant
    Filed: September 12, 2014
    Date of Patent: December 5, 2017
    Assignee: The United States of America as represented by the Administrator of NASA
    Inventors: Yeonjoon Park, Hyun Jung Kim, Jonathan R. Skuza, Kunik Lee, Glen C. King, Sang Hyouk Choi
  • Patent number: 9824885
    Abstract: One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic <111> direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.
    Type: Grant
    Filed: September 13, 2016
    Date of Patent: November 21, 2017
    Assignee: The Unites States of America as represented by the Administrator of NASA
    Inventors: Yeonjoon Park, Sang Hyouk Choi
  • Patent number: 9711680
    Abstract: An integrated hybrid crystal Light Emitting Diode (“LED”) display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.
    Type: Grant
    Filed: September 13, 2016
    Date of Patent: July 18, 2017
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Yeonjoon Park, Sang Hyouk Choi
  • Publication number: 20170178903
    Abstract: Various embodiments may provide a low temperature (i.e., less than 850° C.) method of Silicon-Germanium (SiGe) on sapphire (Al2O3) (SiGe/sapphire) growth that may produce a single crystal film with less thermal loading effort to the substrate than conventional high temperature (i.e., temperatures above 850° C.) methods. The various embodiments may alleviate the thermal loading requirement of the substrate, which in conventional high temperature (i.e., temperatures above 850° C.) methods had surface temperatures within the range of 850° C.-900° C. The various embodiments may provide a new thermal loading requirement of the sapphire substrate for growing single crystal SiGe on the sapphire substrate in the range of about 450° C. to about 500° C.
    Type: Application
    Filed: December 21, 2016
    Publication date: June 22, 2017
    Inventors: Sang Hyouk Choi, Adam J. Duzik
  • Publication number: 20170179233
    Abstract: An electronic device includes a trigonal crystal substrate defining a (0001) C-plane. The substrate may comprise Sapphire or other suitable material. A plurality of rhombohedrally aligned SiGe (111)-oriented crystals are disposed on the (0001) C-plane of the crystal substrate. A first region of material is disposed on the rhombohedrally aligned SiGe layer. The first region comprises an intrinsic or doped Si, Ge, or SiGe layer. The first region can be layered between two secondary regions comprising n+doped SiGe or n+doped Ge, whereby the first region collects electrons from the two secondary regions.
    Type: Application
    Filed: March 3, 2017
    Publication date: June 22, 2017
    Inventors: Sang Hyouk Choi, Yeonjoon Park, Glen C. King, Hyun-Jung Kim, Kunik Lee
  • Publication number: 20170145589
    Abstract: Some aspects relate to methods of forming an epitaxial layer. In some examples, the methods include ejecting atoms from a molten metal sputtering material onto a heated crystalline substrate and growing a single epitaxial layer on the substrate from the ejected atoms, where the atoms are ejected with sufficient energy that the grown epitaxial layer has at least a partial rhombohedral lattice, and wherein the crystalline substrate is heated to a temperature of about 600 degrees Celsius or less, or about 500 degrees or less. Other aspects relate to materials, such as a material including a single epitaxial layer on top of a crystalline substrate, the layer including one or more semiconductor materials and having at least a partial rhombohedral lattice, or a substantially rhombohedral lattice.
    Type: Application
    Filed: November 22, 2016
    Publication date: May 25, 2017
    Inventors: Hyun Jung Kim, Sang Hyouk Choi
  • Patent number: 9634750
    Abstract: A beamforming method is provided. The beamforming method includes determining different beams for pieces of user equipment based on channel information fed back from the pieces of user equipment, predicting beam qualities of the pieces of user equipment for the beams, determining whether the beam qualities satisfy Quality of Service (QoS) for the pieces of user equipment, generating a wide nulling beam by applying wide nulling to a second beam having a side lobe acting as interference against one first beam, when the beam quality of the first beam does not satisfy the QoS; predicting beam qualities for the beams including the wide nulling beam instead of the second beam, and simultaneously communicating with the user equipment through the beams including the wide nulling beam instead of the second beam, when the beam qualities for the beams including the wide nulling beam instead of the second beam satisfy the QoS.
    Type: Grant
    Filed: March 27, 2015
    Date of Patent: April 25, 2017
    Assignees: Samsung Electronics Co., Ltd., Korea Advanced Insitute Of Science and Technology
    Inventors: Se-Min Kwak, Yong-Hoon Kim, Hee-Seong Yang, Sang-Hyouk Choi, Joo-Hwan Chun
  • Patent number: 9614026
    Abstract: An electronic device includes a trigonal crystal substrate defining a (0001) C-plane. The substrate may comprise Sapphire or other suitable material. A plurality of rhombohedrally aligned SiGe (111)-oriented crystals are disposed on the (0001) C-plane of the crystal substrate. A first region of material is disposed on the rhombohedrally aligned SiGe layer. The first region comprises an intrinsic or doped Si, Ge, or SiGe layer. The first region can be layered between two secondary regions comprising n+doped SiGe or n+doped Ge, whereby the first region collects electrons from the two secondary regions.
    Type: Grant
    Filed: March 10, 2014
    Date of Patent: April 4, 2017
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Sang Hyouk Choi, Yeonjoon Park, Glen C. King, Hyun-Jung Kim, Kunik Lee
  • Publication number: 20170004962
    Abstract: One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic <111> direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.
    Type: Application
    Filed: September 13, 2016
    Publication date: January 5, 2017
    Inventors: Yeonjoon Park, Sang Hyouk Choi
  • Publication number: 20160380148
    Abstract: An integrated hybrid crystal Light Emitting Diode (“LED”) display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.
    Type: Application
    Filed: September 13, 2016
    Publication date: December 29, 2016
    Inventors: Yeonjoon Park, Sang Hyouk Choi
  • Publication number: 20160285164
    Abstract: A method for receiving a signal by using M multiple beams in a multi-antenna system including N antenna elements, is provided in and embodiment of the present application. The method includes setting, by M beams, a beam direction for the M beams and a modulation frequency for frequency modulation of a beam response and generating the M beams according to the beam direction and the modulation frequency set by the beams. M beam responses are generated for a receiving signal by using the generated M beams and the generated M beam responses are frequency modulated by using the modulation frequency set by the beams. The frequency-modulated M beam responses are band-pass filtered so as to separate the M beam responses and the separated M beam responses are respectively demodulated.
    Type: Application
    Filed: November 6, 2014
    Publication date: September 29, 2016
    Inventors: Sang-Hyouk Choi, Yong-Hoon Kim, Hee-Seong Yang, Joo-Hwan Chun
  • Patent number: 9455374
    Abstract: An integrated hybrid crystal Light Emitting Diode (“LED”) display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.
    Type: Grant
    Filed: May 16, 2014
    Date of Patent: September 27, 2016
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Yeonjoon Park, Sang Hyouk Choi
  • Patent number: 9449818
    Abstract: One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic <111> direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.
    Type: Grant
    Filed: March 11, 2014
    Date of Patent: September 20, 2016
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Yeonjoon Park, Sang Hyouk Choi