Abstract: A semiconductor device including: a first transistor which include a first gate stack on a substrate; and a second transistor which includes a second gate stack on the substrate, wherein the first gate stack includes a first ferroelectric material layer disposed on the substrate, a first work function layer disposed on the first ferroelectric material layer and a first upper gate electrode disposed on the first work function layer, wherein the second gate stack includes a second ferroelectric material layer disposed on the substrate, a second work function layer disposed on the second ferroelectric material layer and a second upper gate electrode disposed on the second work function layer, wherein the first work function layer includes the same material as the second work function layer, and wherein an effective work function of the first gate stack is different from an effective work function of the second gate stack.

Abstract: A method, performed by a user equipment (UE), of transmitting and receiving signals in a wireless communication system, according to an embodiment, includes receiving a logical channel release request from a next-generation node B (gNB), determining a logical channel to release, an operation mode of the logical channel to release, and whether a packet data convergence protocol (PDCP) layer apparatus connected to the logical channel is re-established, based on the logical channel release request, and performing PDCP data recovery based on the determination result.

Abstract: A curable composition is capable of forming a thick film having excellent curing characteristics even at a relatively low temperature and is capable of securing an excellent level of thermal conductivity as well as a desired level of appropriate adhesion force while having fast curing characteristics. A battery pack to which the curable composition is applied, and a device comprising the battery pack are also provided.

Abstract: Provided is a method for preparing a perovskite crystal that improves the performance of a photovoltaic cell. One embodiment of the present disclosure provides a method for preparing a perovskite crystal, the method including: a step S1 of preparing a perovskite solution containing a perovskite precursor and a first polar aprotic solvent; and a step S2 of preparing a perovskite crystal by mixing the perovskite solution and an antisolvent, wherein the antisolvent includes a second polar aprotic solvent.

Abstract: The present disclosure relates to a photo-curable composition, a cured product thereof, and an optical member and a display device comprising same. The photo-curable composition has excellent low refractive index, light transmittance, and low haze characteristics by comprising a first olefinic monomer containing fluorine, a second olefinic monomer having an absolute viscosity of 7 cP or less at 25° C., a photo-polymerization initiator, and an amine compound.

Abstract: A memory device includes a buffer die configured to receive a first broadcast command and a second broadcast command from an external device; and a plurality of core dies stacked on the buffer die. The plurality of core dies include: a first core die including a first processing circuit, a first memory cell array, a first command decoder configured to decode the first broadcast command, and a first data input/output circuit configured to output data of the first memory cell array to a common data input/output bus under control of the first command decoder; and a second core die including a second processing circuit, a second memory cell array, a second command decoder configured to decode the second broadcast command, and a second data input/output circuit configured to receive the data of the first memory cell array through the common data input/output bus under control of the second command decoder.

Abstract: A method of preparing a negative electrode for a lithium secondary battery, which includes forming a negative electrode mixture layer including a negative electrode active material on a negative electrode current collector, disposing lithium metal powder on at least a part of the negative electrode mixture layer, pressing the negative electrode mixture layer on which the lithium metal powder is disposed, wetting the pressed negative electrode mixture layer with a first electrolyte solution, and drying the wet negative electrode mixture layer. A battery including the negative electrode of the present invention has enhanced rapid charge/discharge characteristics and enhanced lifespan characteristics.

Abstract: Provided is a ceiling storage system capable of correcting a working position and constantly checking stability of a structure by detecting an amount of change in a facility. According to the ceiling storage system, a transport vehicle moves to an upper portion of a first storage area of a plurality of storage areas in a state of gripping an article, and the transport vehicle measures a first distance value between the transport vehicle and the first storage area using a distance sensor and measures a relative position value between the transport vehicle and the first storage area using a vision sensor, before unloading the article from the first storage area.

Abstract: Methods and apparatuses are provided in a wireless communication system. Packet data convergence protocol (PDCP) configuration information that configures a PDCP entity of the terminal to use an uplink data compression (UDC) is received from a base station. The PDCP entity generates a UDC header and a UDC data block, based on the PDCP configuration information. The PDCP entity ciphers the UDC header and the UDC data block. The PDCP entity generates PDCP data including a PDCP header, the ciphered UDC header and the ciphered UDC data block. The generated PDCP data is transmitted to the base station. A header compression is not configured in case that the UDC is configured.

Abstract: The present disclosure relates to a positive active material for a lithium rechargeable battery, a manufacturing method thereof, and a lithium rechargeable battery including the positive active material, and it provides a positive active material which is a lithium composite metal oxide including nickel, cobalt, and manganese, and either has orientation in a direction of with respect to an ND axis that is equal to or greater than 29% or has orientation in a direction of [120]+[210] with respect to an RD axis that is equal to or greater than 82% in the case of an EBSD analysis with a misorientation angle (?g) that is equal to or less than 30 degrees.

Abstract: A semiconductor device includes, first and second source/drain patterns on an active pattern and spaced apart from each other, a first source/drain contact on the first source/drain pattern and including a first source/drain barrier film and a first source/drain filling film on the first source/drain barrier film, a second source/drain contact on the second source/drain pattern, and a gate structure on the active pattern between the first and second source/drain contacts and including a gate electrode, wherein a top surface of the first source/drain contact is lower than a top surface of the gate structure, and a height from a top surface of the active pattern to a top surface of the first source/drain barrier film is less than a height from the top surface of the active pattern to a top surface of the first source/drain filling film.

Abstract: A three-dimensional semiconductor device may comprise a first cell region, a second cell region, and a via plug region disposed between the first cell region and the second cell region; a word line stack disposed in the first cell region, the via plug region, and the second cell region, the word line stack including a plurality of word lines and a plurality of interlayer insulating layers which are alternately stacked; and a plurality of via plugs exclusively connected to the plurality of the word lines, respectively, by vertically penetrating through the word line stack in the via plug region. The via plugs may have an arrangement of a zigzag pattern in a row direction from a top view. The diameters of the via plugs may increase in the row direction.

Abstract: A memory may include a first wafer, and a second wafer stacked on and bonded to the first wafer. The first wafer may include a cell structure including a memory cell array; and a first logic structure disposed under the cell structure, and including a row control circuit. The second wafer may include a second logic structure including a column control circuit.

Abstract: A non-volatile memory device comprises a substrate, a mold structure that includes gate electrodes stacked on the substrate and mold insulating layers alternately stacked with the gate electrodes, a cell contact on the substrate, wherein the cell contact is electrically connected to a selection gate electrode of the gate electrodes and is not electrically connected to a non-selection gate electrode of the gate electrodes, an insulating ring on the substrate, wherein the insulating ring is between the non-selection gate electrode and a sidewall of the cell contact and is in contact with the non-selection gate electrode, and a high dielectric constant layer between respective ones of the gate electrodes and the mold insulating layers, wherein the insulating ring includes a first portion that overlaps the high dielectric constant layer in a vertical direction, and a second portion that does not overlap the high dielectric constant layer in the vertical direction.

Abstract: The present exemplary embodiments provide a positive electrode active material, a manufacturing method thereof, and a lithium secondary battery including the same. The positive electrode active material according to an exemplary embodiment is a metal oxide particle including a center and a surface portion positioned on the surface of the center, but the metal oxide particle is composed of a single particle, and the surface portion includes a film in which no peak is observed during XRD measurement.

Abstract: The present disclosure relates to a positive active material for a lithium rechargeable battery and a lithium rechargeable battery including the same, which include a first compound represented by Chemical Formula 1 and a second compound represented by Chemical Formula 2, and a content of the first compound is 65 wt % or more based of the positive active material of 100 wt %. Lia1Nib1Coc1Mnd1M1e1M2f1O2-f1[??Chemical Formula 1] Lia2Nib2COc2Mnd2M3e2M4f2O2-f2[??Chemical Formula 2] Chemical Composition 1 and 2 of each composition and molar ratio is as defined in the specification. Each composition and molar ratio of Chemical Formula 1 and 2 is as defined in the specification.

Abstract: A display apparatus includes a substrate including a penetrating area including a substrate hole, and a separating area surrounding the penetrating area, a first buffer layer including a first-buffer lower layer on the substrate, and a first-buffer upper layer on the first-buffer lower layer, a first TFT including a first semiconductor pattern on the first-buffer upper layer, and a first gate electrode overlapping with the first semiconductor pattern under conditions that a first gate insulating film is interposed therebetween, and first source/drain electrodes connected to the first semiconductor pattern, a second TFT, a separation structure disposed in the separating area of the substrate while including a first separation layer having the same stacked structure as the first-buffer upper layer, a second separation layer having the same stacked structure as the first gate insulating film, and a third separation layer having the same stacked structure as the first gate electrode.

Abstract: An ultraviolet emitting device according to the present disclosure includes a lamp for mounting a discharge gas and an ultraviolet emission source therein, and a plurality of yarns formed by extending and aggregating carbon nanotubes in a first direction, and includes a first electrode at least partially exposed to the discharge gas within the lamp. Accordingly, electron emission efficiency of the first electrode is improved to achieve high efficiency, and durability is also improved to provide a long-life device.

Abstract: A wafer storage and transport system includes a ceiling surface which includes a first surface and a second surface, a first traveling rail installed on the second surface, a second traveling rail which is spaced apart from the first surface in a third direction, and extends in a first direction, a transport unit which is movable in the first direction along the second traveling rail and transports a FOUP, storage spaces installed on the first surface and which may store the FOUP, an interface port installed on the second surface and which temporarily stores the FOUP, and an OHT which is movable along the first traveling rail, wherein the transport unit grasps the FOUP arranged in the storage spaces and transports the FOUP to the interface port, and the OHT grasps the FOUP temporarily stored in the interface port and transports the FOUP to a semiconductor facility.

Abstract: According to the present invention, it is possible to provide a composition comprising a resin component and a filler component comprising a filler having a specific gravity of 3 or more and a filler having a specific gravity of less than 3, which achieves a low specific gravity effect in a state where a filler is filled in a high content and in a state where realization of physical properties is sufficiently secured, and has improved storage stability without deterioration of physical properties such as a thermal conductivity, and a product comprising a heating element and the composition or a cured product thereof in thermal contact with the heating element.