Patents by Inventor Sang-hyun Woo

Sang-hyun Woo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7414505
    Abstract: An inductor used in an RF unit for a wireless communication terminal, includes first inductor means for electrically connecting an RF chip placed over a substrate at a predetermined distance from the substrate that are enclosed by an interlayer dielectric layer and second inductor means for connecting the RF chip to the first inductor means.
    Type: Grant
    Filed: May 13, 2003
    Date of Patent: August 19, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-hyun Woo, Kwang-du Lee
  • Patent number: 7408408
    Abstract: A predistorter that linearizes the nonlinearity of a power amplifier in a system supporting a multimode and a multiband (frequency band). The predistorter includes a field-effect transistor, an impedance transform unit, a first inductor, a first capacitor, and a second capacitor. The field-effect transistor has a source connected to the ground and uses a variable gate bias voltage. The impedance transform unit is connected to a drain of the field-effect transistor to perform impedance transform. The first inductor is connected between the impedance transform unit and a voltage provided to the field-effect transistor. The first capacitor is connected between a power input terminal and the impedance transform unit. The second capacitor is connected between a power output terminal and the impedance transform unit.
    Type: Grant
    Filed: July 20, 2005
    Date of Patent: August 5, 2008
    Assignee: Samsung Electronics Co., Ltd
    Inventors: Hyun-Il Kang, Young-Hwan Kim, Jae-Sup Lee, Sang-Hyun Woo
  • Patent number: 7403075
    Abstract: Disclosed is an ultra wide band signal generator. The ultra wide band signal generator generates a signal of a required frequency using a harmonic signal having a frequency range of a ultra wide band (UWB). The ultra wide band signal generator includes an active inductor for generating harmonic signals having power strengths substantially equal to each other within a non-linear operation range, the tunable active inductor capable of tuning a value thereof, an oscillator for amplifying and outputting the harmonic signals generated from the active inductor by frequency-transiting the harmonic signals into high frequency bands, and a filter for selectively outputting one of the harmonic signals output from the oscillator.
    Type: Grant
    Filed: February 2, 2006
    Date of Patent: July 22, 2008
    Assignees: Samsung Electronics Co., Ltd, Georgia Tech Research Corporation
    Inventors: Rajarshi Mukhopadhyay, Sebastien Nuttinck, Yun-Seo Park, Sang-Woong Yoon, Sang-Hyun Woo, Hyun-Il Kang, Chang-Ho Lee, Joy Laskar
  • Publication number: 20070211808
    Abstract: Provided is an apparatus and method for calibrating an imbalance characteristic of a received signal of a frequency domain in a mobile receiver which supports an Orthogonal Frequency Division Multiplexing (OFDM) scheme. To this end, a received signal of a radio frequency band is converted into a baseband signal by using a carrier, and the baseband received signal is converted from a time domain signal to a frequency domain signal. Then, a calibration coefficient is measured by using two consecutively received signals from the Fast Fourier Transform (FFT) unit. An imbalance component included in the received signal of the frequency domain due to an imbalance of the carrier is removed by using the measured calibration coefficient. In this case, the two consecutively received signals refer to two transmission signals consecutively transmitted from a transmitter, and the two transmission signals are predetermined signals.
    Type: Application
    Filed: February 22, 2007
    Publication date: September 13, 2007
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyun-Il Kang, Jae-Kon Lee, Hyeong-Seok Yu, Sang-Hyun Woo
  • Patent number: 7253688
    Abstract: Provided is a multiband low noise amplifier including a first transistor, an input matching circuit, and a first capacitor. The first transistor includes a collector electrically connected to a first power supply, a grounded emitter, and a base connected to the other end of a first inductor having one end as an input end of the low noise amplifier. The input matching circuit is connected between the collector and the base of the first transistor. The first capacitor connected to the collector of the first transistior. The input matching circuit includes a varactor. The input matching circuit includes a second capacitor connected to the varactor. The input matching circuit includes a first resistor connected to the varactor. In the multiband low noise amplifier, a varactor having a variable capacitance is installed at an input end, thereby easily performing band switching through bias voltage control by a small amount and minimizing noises that may be caused by a control signal.
    Type: Grant
    Filed: March 24, 2005
    Date of Patent: August 7, 2007
    Assignees: Samsung Electronics Co., Ltd., Georgia Tech Research Corporation
    Inventors: Rahul Bhatia, Sang-Hyun Woo, Ji-Hoon Bang, Seong-Soo Lee, Chang-Ho Lee, Joy Laskar
  • Patent number: 7253707
    Abstract: An active inductor capable of tuning a self-resonant frequency, an inductance, a Q factor, and a peak Q frequency by applying a tunable feedback resistor to a cascode-grounded active inductor is disclosed. The tunable active inductor includes a first transistor having a source connected to a power supply voltage and a gate connected to first bias voltage; a second transistor having a drain connected to a drain of the first transistor and a gate connected to a second bias voltage; a third transistor having a drain connected to a source of the second transistor and a source connected to a ground voltage; a fourth transistor having a drain connected to a gate of the third transistor, a source connected to the ground voltage and a gate connected to a third bias voltage; a fifth transistor having a source connected to the drain of the fourth transistor and a drain connected to the power supply voltage.
    Type: Grant
    Filed: May 31, 2005
    Date of Patent: August 7, 2007
    Assignees: Samsung Electronics Co., Ltd., Georgia Tech Research Corporation
    Inventors: Rajarshi Mukhopadhy, Sebastien Nuttinck, Sang-Hyun Woo, Jong-Han Kim, Seong-Soo Lee, Chang-Ho Lee, Joy Laskar
  • Publication number: 20070159162
    Abstract: Disclosed is a method and an apparatus for self-calibrating a Direct Current (DC) offset and an imbalance between orthogonal signals, which may occur in a mobile transceiver. In the apparatus, a transmitter of a mobile terminal functions as a signal generator, and a receiver of the mobile terminal functions as a response characteristic detector. Further, a baseband processor applies test signals to the transmitter, receives the test signals returning from the receiver, and compensates the imbalance and DC offset for the transmitter side and the receiver side by using the test signals. The test signal is applied to only one of the I channel path and the Q channel path, and an RF band signal output from the transmission side by the test signal is used as an input signal to the reception side.
    Type: Application
    Filed: December 8, 2006
    Publication date: July 12, 2007
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyun-Il Kang, Jae-Kon Lee, Young-Hwan Lee, Hyeong-Seok Yu, Sang-Hyun Woo
  • Publication number: 20070126491
    Abstract: Provided is a mixer for use in a direct conversion receiver. The mixer includes Field Effect Transistors (FETs), a current source (IBias), two load resistors (RLoad), another FET, and two inductors L1 and L2. The FET M21 constitutes a current bleeding circuitry and the other components except for the two inductors L1 and L2 constitute a so-called Gilbert cell mixer.
    Type: Application
    Filed: October 24, 2006
    Publication date: June 7, 2007
    Applicants: SAMSUNG ELECTRONICS CO., LTD., Georgia Tech Research Corporation
    Inventors: Sang-Hyun Woo, Jin-Sung Park, Chang-Ho Lee, Joy Laskar
  • Publication number: 20070047634
    Abstract: Disclosed is a method and an apparatus for self-calibrating direct current (DC) offset and imbalance between orthogonal signals, which may occur in a mobile transceiver. In the apparatus, a transmitter of a mobile terminal functions as a signal generator, and a receiver of the mobile terminal functions as a response characteristic detector. Further, a baseband processor applies test signals to the transmitter, receives the test signals returning from the receiver, and compensates the imbalance and DC offset for the transmitter side and the receiver side by using the test signals.
    Type: Application
    Filed: August 23, 2006
    Publication date: March 1, 2007
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyun-Il Kang, Chang-Seok Lee, Jae-Kon Lee, Jong-Ae Park, Jae-Sup Lee, Tae-Wook Kim, Sang-Hyun Woo
  • Patent number: 7158768
    Abstract: A switching filter module for dynamic selection of N channels is provided. In the switching filter module, each of N double-channel selection filters passes the frequency bandwidths of two of successive first to Nth channels having predetermined frequency bandwidths, and one or more 2-way and 3-way switches connect the double-channel selection filters to one another. Each of the N double-channel selection filters is serially connected to at least one of the other double-channel selection filters and at least one 3-way switch.
    Type: Grant
    Filed: June 9, 2004
    Date of Patent: January 2, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-Hyun Woo, Dong-Jun Lee
  • Patent number: 7113008
    Abstract: A frequency mixing apparatus is provided. In the frequency mixing apparatus, a PMOS transistor is coupled to an NMOS transistor in a cascode configuration and an LO signal is applied to the bulks of the PMOS and NMOS transistors so that an input signal applied to their gates is mixed with the LO signal. High isolation between the bulks and gates of the transistors resulting from application of the LO signal to the bulks prevents leakage of the LO signal, thereby decreasing a DC offset voltage. This renders the frequency mixing applicable to a DCR. Also, due to the cascade configuration similar to an inverter configuration, the frequency mixing apparatus can be incorporated in an FPGA of a MODEM in SDR applications. Frequency mixing based on switching of a threshold voltage decreases a noise factor and enables frequency mixing in a low supply voltage range, thereby decreasing power consumption.
    Type: Grant
    Filed: September 8, 2005
    Date of Patent: September 26, 2006
    Assignees: Samsung Electronics Co., Ltd., Georgia Tech Research Corporation
    Inventors: Bevin George Perumana, Sudipto Chakraborty, Chang-Ho Lee, Joy Laskar, Sang-Hyun Woo
  • Publication number: 20060197617
    Abstract: Disclosed is an ultra wide band signal generator. The ultra wide band signal generator generates a signal of a required frequency using a harmonic signal having a frequency range of a ultra wide band (UWB). The ultra wide band signal generator includes an active inductor for generating harmonic signals having power strengths substantially equal to each other within a non-linear operation range, the tunable active inductor capable of tuning a value thereof, an oscillator for amplifying and outputting the harmonic signals generated from the active inductor by frequency-transiting the harmonic signals into high frequency bands, and a filter for selectively outputting one of the harmonic signals output from the oscillator.
    Type: Application
    Filed: February 2, 2006
    Publication date: September 7, 2006
    Applicants: SAMSUNG ELECTRONICS CO., LTD., Georgia Tech Research Corporation
    Inventors: Rajarshi Mukhopadhy, Sebastien Nuttinck, Yun-Seo Park, Sang-Woong Yoon, Sang-Hyun Woo, Hyun-Il Kang, Chang-Ho Lee, Joy Laskar
  • Publication number: 20060197595
    Abstract: A predistorter that linearizes the nonlinearity of a power amplifier in a system supporting a multimode and a multiband (frequency band). The predistorter includes a field-effect transistor, an impedance transform unit, a first inductor, a first capacitor, and a second capacitor. The field-effect transistor has a source connected to the ground and uses a variable gate bias voltage. The impedance transform unit is connected to a drain of the field-effect transistor to perform impedance transform. The first inductor is connected between the impedance transform unit and a voltage provided to the field-effect transistor. The first capacitor is connected between a power input terminal and the impedance transform unit. The second capacitor is connected between a power output terminal and the impedance transform unit.
    Type: Application
    Filed: July 20, 2005
    Publication date: September 7, 2006
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyun-II Kang, Young-Hwan Kim, Jae-Sup Lee, Sang-Hyun Woo
  • Publication number: 20060194556
    Abstract: Disclosed is a local oscillation circuit for a direct conversion receiver, which includes a local oscillator for outputting a local oscillation signal of a predetermined frequency; and a fractional signal generator for converting the local oscillation signal into a fractional harmonic signal, which has a frequency equal to a frequency of a received signal, and outputting the converted signal to a down converter. The fractional signal generator includes a divider for dividing a frequency of an output signal of the fractional signal generator by a predetermined integer; and a mixer for mixing the local oscillation signal and an output signal of the divider.
    Type: Application
    Filed: February 2, 2006
    Publication date: August 31, 2006
    Applicants: Samsung Electronics Co., Ltd., GEORGIA TECH RESEARCH CO.
    Inventors: Yun-Seo Park, Sang-Hyun Woo, Jong-Ae Park, Seong-Soo Lee, Chang-Ho Lee, Joy Laskar
  • Patent number: 7099647
    Abstract: A single chip direct conversion transceiver that includes a substrate on which a mixer unit and a local oscillator are provided as a circuit, and a positive hole formed between the mixer unit and the local oscillator and filled with a conductive plug to block signal leakage. A shield ground surface is formed above the substrate and blocks signal leakage occurring when the signals received through the antenna are input into the mixer and signal leakage occurring when the reference signal is input into the mixer from the local oscillator. A first interconnection is formed above the shield ground surface and connects the mixer unit and the local oscillator. Dielectric layers are formed between the substrate and the shield ground surface and on the shield ground surface to cover the first interconnection.
    Type: Grant
    Filed: January 29, 2004
    Date of Patent: August 29, 2006
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-hyun Woo, Jong-ae Park
  • Publication number: 20060170523
    Abstract: An active inductor capable of tuning a self-resonant frequency, an inductance, a Q factor, and a peak Q frequency by applying a tunable feedback resistor to a cascode-grounded active inductor is disclosed. The tunable active inductor includes a first transistor having a source connected to a power supply voltage and a gate connected to first bias voltage; a second transistor having a drain connected to a drain of the first transistor and a gate connected to a second bias voltage; a third transistor having a drain connected to a source of the second transistor and a source connected to a ground voltage; a fourth transistor having a drain connected to a gate of the third transistor, a source connected to the ground voltage and a gate connected to a third bias voltage; a fifth transistor having a source connected to the drain of the fourth transistor and a drain connected to the power supply voltage.
    Type: Application
    Filed: May 31, 2005
    Publication date: August 3, 2006
    Applicants: SAMSUNG ELECTRONICS CO., LTD., GEORGIA TECH RESEARCH CORPORATION
    Inventors: Rajarshi Mukhopadhy, Sebastien Nuttinck, Sang-Hyun Woo, Jong-Han Kim, Seong-Soo Lee, Chang-Ho Lee, Joy Laskar
  • Publication number: 20060057998
    Abstract: A frequency mixing apparatus is provided. In the frequency mixing apparatus, a PMOS transistor is coupled to an NMOS transistor in a cascode configuration and an LO signal is applied to the bulks of the PMOS and NMOS transistors so that an input signal applied to their gates is mixed with the LO signal. High isolation between the bulks and gates of the transistors resulting from application of the LO signal to the bulks prevents leakage of the LO signal, thereby decreasing a DC offset voltage. This renders the frequency mixing applicable to a DCR. Also, due to the cascade configuration similar to an inverter configuration, the frequency mixing apparatus can be incorporated in an FPGA of a MODEM in SDR applications. Frequency mixing based on switching of a threshold voltage decreases a noise factor and enables frequency mixing in a low supply voltage range, thereby decreasing power consumption.
    Type: Application
    Filed: September 8, 2005
    Publication date: March 16, 2006
    Applicants: SAMSUNG ELECTRONICS CO., LTD., Georgia Tech Research Corporation
    Inventors: Bevin Perumana, Sudipto Chakraborty, Chang-Ho Lee, Joy Laskar, Sang-Hyun Woo
  • Patent number: 6983132
    Abstract: A multi-band radio frequency (RF) receiving method in a mobile communication system having a reduced size and cost includes receiving RF wave signals for four or more non-overlapping bands, primarily filtering a first wide band including adjacent first and second bands and a second wide band including adjacent third and fourth bands from the received RF wave signals, low-noise amplifying the RF wave signals of the first and second wide bands, respectively, secondarily filtering a third wide band including adjacent second and third bands and a fourth wide band including first and fourth bands from the low-noise amplified RF wave signals of the first and second wide bands, generating two band RF wave signals to be simultaneously received, and frequency-down converting the two band RF wave signals generated in the secondary filtering step into two band intermediate frequency wave signals by means of first and second oscillation frequencies.
    Type: Grant
    Filed: July 10, 2003
    Date of Patent: January 3, 2006
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-hyun Woo, Seong-soo Lee, Jong-ae Park
  • Publication number: 20050245225
    Abstract: An apparatus for generating an in-phase/quadrature-phase (I/Q) signal in a wireless transceiver is disclosed, including a local oscillator for generating a local oscillation signal, and first and second mixers for mixing the oscillation signal with a transmission/reception signal to convert the transmission/reception signal into a baseband or high-frequency signal. The apparatus includes a phase locked circuit for controlling the local oscillator, and a polyphase filter installed between the local oscillator and the mixers, for separating the oscillation signal from the local oscillator into an I signal and a Q signal depending on a control signal from the phase locked circuit, and outputting the separated I and Q signals to the first and second mixers, respectively.
    Type: Application
    Filed: March 24, 2005
    Publication date: November 3, 2005
    Applicants: SAMSUNG ELECTRONICS CO., LTD., Georgia Tech Research Corporation
    Inventors: Yun-Seo Park, Sang-Hyun Woo, Hwan-Seok Song, Seong-Soo Lee, Chang-Ho Lee, Joy Laskar
  • Publication number: 20050225397
    Abstract: Provided is a multiband low noise amplifier including a first transistor, an input matching circuit, and a first capacitor. The first transistor includes a collector electrically connected to a first power supply, a grounded emitter, and a base connected to the other end of a first inductor having one end as an input end of the low noise amplifier. The input matching circuit is connected between the collector and the base of the first transistor. The first capacitor connected to the collector of the first transistior. The input matching circuit includes a varactor. The input matching circuit includes a second capacitor connected to the varactor. The input matching circuit includes a first resistor connected to the varactor. In the multiband low noise amplifier, a varactor having a variable capacitance is installed at an input end, thereby easily performing band switching through bias voltage control by a small amount and minimizing noises that may be caused by a control signal.
    Type: Application
    Filed: March 24, 2005
    Publication date: October 13, 2005
    Applicants: SAMSUNG ELECTRONICS CO., LTD., Georgia Tech Research Corporation
    Inventors: Rahul Bhatia, Sang-Hyun Woo, Ji-Hoon Bang, Seong-Soo Lee, Chang-Ho Lee, Joy Laskar