Abstract: A liquid crystal display device is disclosed. The disclosed device includes a first substrate including a plurality of gate and data lines defining a plurality of pixel regions, heating conductive lines having first conductive lines formed substantially in parallel with the gate lines and second conductive lines formed substantially in parallel with the data lines, thin film transistors (TFT) connected to the corresponding gate lines and data lines, and pixel electrodes connected to the corresponding TFTs. The disclosed device also includes a second substrate including a plurality of color filters formed corresponding to the pixel regions, and a liquid crystal layer between the first substrate and the second substrate. At least one of the second conductive lines is separated from at least one of the first conductive lines.

Abstract: An organic electronic device. The device includes a first electrode to inject or extract hole, the first electrode including a conductive layer and an n-type organic compound layer disposed on the conductive layer, a second electrode to inject or extract electron, a p-type organic compound layer disposed between the n-type organic compound layer and the second electrode. The p-type organic compound layer forms an NP junction between the n-type organic compound layer and the p-type organic compound layer. The energy difference between a lowest unoccupied molecular orbital (LUMO) energy of the n-type organic compound layer and a Fermi energy of the conductive layer is about 2 eV or less, and the energy difference between the LUMO energy of the n-type organic compound layer and a highest unoccupied molecular orbital (HOMO) energy of the p-type organic compound layer is about 1 eV or less.

Abstract: The present invention relates to a novel compound that can significantly improve the lifespan, efficiency and thermal stability of an organic light emitting device, and to an organic electroluminescence device or light emitting device comprising the compound in an organic compound layer is also disclosed.

Abstract: Disclosed is an apparatus and method of communicating data for a digital mobile station, and more particularly a data transmitting and receiving apparatus and method capable of transmitting and receiving graphic and/or data using a Short Message Service(SMS). According to the present invention, an SMS message comprises an SMS header field and an SMS user data field, wherein the SMS user data field comprises a data transmission header field and a data field. The data transmission header field comprises a code field to indicate one of plural types of data associated with data contained in the data field of the SMS user data field, a data transmitting and receiving apparatus and method capable of transmitting and receiving graphic and/or audio data using a Short Message Service(SMS). Further, an SMS message comprises an SMS header field and an SMS user data field, wherein the SMS user data field comprises a data transmission header field and a data field.

Abstract: Disclosed is an apparatus and method of transmitting and receiving storage data for a digital mobile station, and more particularly a data transmitting and receiving apparatus and method capable of transmitting and receiving a large capacity of data using a short message service. According to the data transmitting method, stored data is read and encoded in a data transmission mode, and inherent distinction data transmission headers are generated according to the completion of the data encoding, the encoded data and the generated data transmission headers are formed into the user data of a short message service, and short message service blocks including the user data of the short message service are transmitted.

Abstract: Disclosed is a gas cylinder including: a spindle at least having a flange washer of a cavity shape having a region D1 and a region D2 whose inner diameters are different; a piston inserted to the open inside of the spindle; a piston rod whose one end is fixed in the piston; a base tube having a mounting member on which the lower end of the spindle is mounted with the mounting member inserted to the flange washer; and a pipe holder inserted to the tapered portion in the upper part of the spindle.

Abstract: Disclosed is a gas cylinder including: a spindle at least having a flange washer of a cavity shape having a region D1 and a region D2 whose inner diameters are different; a piston inserted to the open inside of the spindle; a piston rod whose one end is fixed in the piston; a base tube having a mounting member on which the lower end of the spindle is mounted with the mounting member inserted to the flange washer; and a pipe holder inserted to the tapered portion in the upper part of the spindle.

Abstract: A handler for testing semiconductor devices is provided, wherein a soaking plate is fitted on a handler body having temperature control means for heating and/or cooling semiconductor devices placed thereon. Loading/unloading shuttles are movably fitted, such that they can move in a forward/backward direction, for carrying the semiconductor deices to/from a test site, thereby simplifying a handler system and permitting accurate temperature testing under in high or low temperature environments.

Abstract: Disclosed is a gas cylinder, for improving sealing characteristics of the gas cylinder and improving convenience in manufacturing, including: a valve having a gas opening/closing pin at a through hole in its center, for intermittently passing a gas, and additionally having a valve dividing body seated on a groove approximately in a lower part of the through hole; a spindle to an upper inside of which the valve is inserted; and a piston inserted to an inside of an open cylinder of the spindle, and having, a step threshold formed at a predetermined distance from an upper end, to which an O-ring for maintaining sealing is fit, and having another step threshold ranging from a lower side of the step threshold to a lower end on an inner lateral surface of the piston, to which an O-ring is fit.

Abstract: Semiconductor films include insulating films including contact holes in semiconductor substrates, capacitors comprising lower electrodes formed on conductive material films in the contact holes, high dielectric films formed on the lower electrodes and upper electrodes formed on the high dielectric films, and barrier metal layers positioned between conductive materials in the contact holes and the lower electrodes, the barrier metal layers including metal layers formed in A-B-N structures in which a plurality of atomic layers are stacked by alternatively depositing reactive metal (A), an amorphous combination element (B) for preventing crystallization of the reactive metal (A) and nitrogen (N). The composition ratios of the barrier metal layers are determined by the number of depositions of the atomic layers.

Abstract: A method of delivering two or more mutually-reactive reaction gases when a predetermined film is deposited on a substrate, and a shower head used in the gas delivery method, function to increase the film deposition rate while preventing formation of contaminating particles. In this method, one reaction gas is delivered toward the edge of the substrate, and the other reaction gases are delivered toward the central portion of the substrate, each of the reaction gases being delivered via an independent gas outlet to prevent the reaction gases from being mixed. In the shower head, separate passages are provided to prevent the first reaction gas from mixing with the other reaction gases by delivering the first reaction gas from outlets formed around the edge of the bottom surface of the shower head. The other reaction gases are delivered from outlets formed in the central portion of the bottom surface of the shower head.

Abstract: A method of delivering two or more mutually-reactive reaction gases when a predetermined film is deposited on a substrate, and a shower head used in the gas delivery method, function to increase the film deposition rate while preventing formation of contaminating particles. In this method, one reaction gas is delivered toward the edge of the substrate, and the other reaction gases are delivered toward the central portion of the substrate, each of the reaction gases being delivered via an independent gas outlet to prevent the reaction gases from being mixed. In the shower head, separate passages are provided to prevent the first reaction gas from mixing with the other reaction gases by delivering the first reaction gas from outlets formed around the edge of the bottom surface of the shower head. The other reaction gases are delivered from outlets formed in the central portion of the bottom surface of the shower head.

Abstract: A method for forming a metal layer located over a metal underlayer of a semiconductor device, using a metal halogen gas. The method involves supplying a predetermined reaction gas into a reaction chamber for a predetermined period of time prior to deposition of the metal layer. The reaction gas has a higher reactivity with an active halogen element of a metal halogen gas supplied to form the metal layer, compared to a metal element of the metal halogen gas. As the metal halogen gas is supplied into the reaction chamber, the reaction gas reacts with the halogen radicals of the metal halogen gas, so that the metal underlayer is protected from being contaminated by impurities containing the halogen radicals.

Abstract: The present invention relates to a column unit which connects a chair sheet to a base in which a wheel is installed. The present invention provides a column unit which comprises a base tube having a lower end portion vertically fixed to a base of a chair and having the hollow interior; a spindle having the interior filled with a pressure gas and divided to upper and lower chambers by a piston, an upper end portion of a piston rod being connected to the piston, a lower end portion of the piston rod being rotatably installed at the lower end portion of the inner side of the base tube, the upper and lower chambers are communicated by a bypass, a valve being installed at the bypass; and a guide sleeve installed between the base tube and the spindle and engaged with the spindle to be integrally moved upward and downward together with the spindle.

Abstract: A method of manufacturing a barrier metal layer uses atomic layer deposition (ALD) as the mechanism for depositing the barrier metal. The method includes supplying a first source gas onto the entire surface of a semiconductor substrate in the form of a pulse, and supplying a second source gas, which reacts with the first source gas, onto the entire surface of the semiconductor substrate in the form of a pulse. In a first embodiment, the pulses overlap in time so that the second source gas reacts with part of the first source gas physically adsorbed at the surface of the semiconductor substrate to thereby form part of the barrier metal layer by chemical vapor deposition whereas another part of the second source gas reacts with the first source gas chemically adsorbed at the surface of the semiconductor substrate to thereby form part of the barrier metal layer by atomic layer deposition. Thus, the deposition rate is greater than if the barrier metal layer were only formed by ALD.

Abstract: A method of manufacturing a barrier metal layer uses atomic layer deposition (ALD) as the mechanism for depositing the barrier metal. The method includes supplying a first source gas onto the entire surface of a semiconductor substrate in the form of a pulse, and supplying a second source gas, which reacts with the first source gas, onto the entire surface of the semiconductor substrate in the form of a pulse. In a first embodiment, the pulses overlap in time so that the second source gas reacts with part of the first source gas physically adsorbed at the surface of the semiconductor substrate to thereby form part of the barrier metal layer by chemical vapor deposition whereas another part of the second source gas reacts with the first source gas chemically adsorbed at the surface of the semiconductor substrate to thereby form part of the barrier metal layer by atomic layer deposition. Thus, the deposition rate is greater than if the barrier metal layer were only formed by ALD.

Abstract: A method of forming a metal nitride film using chemical vapor deposition (CVD), and a method of forming a metal contact and a semiconductor capacitor of a semiconductor device using the same, are provided. The method of forming a metal nitride film using chemical vapor deposition (CVD) in which a metal source and a nitrogen source are used as a precursor, includes the steps of inserting a semiconductor substrate into a deposition chamber, flowing the metal source into the deposition chamber, removing the metal source remaining in the deposition chamber by cutting off the inflow of the metal source and flowing a purge gas into the deposition chamber, cutting off the purge gas and flowing the nitrogen source into the deposition chamber to react with the metal source adsorbed on the semiconductor substrate, and removing the nitrogen source remaining in the deposition chamber by cutting off the inflow of the nitrogen source and flowing the purge gas into the deposition chamber.

Abstract: A method of forming a metal layer having excellent thermal and oxidation resistant characteristics using atomic layer deposition is provided. The metal layer includes a reactive metal (A), an element (B) for the amorphous combination between the reactive metal (A) and nitrogen (N), and nitrogen (N). The reactive metal (A) may be titanium (Ti), tantalum (Ta), tungsten (W), zirconium (Zr), hafnium (Hf), molybdenum (Mo) or niobium (Nb). The amorphous combination element (B) may be aluminum (Al), silicon (Si) or boron (B). The metal layer is formed by alternately injecting pulsed source gases for the elements (A, B and N) into a chamber according to atomic layer deposition to thereby alternately stack atomic layers. Accordingly, the composition ratio of a nitrogen compound (A—B—N) of the metal layer can be desirably adjusted just by appropriately determining the number of injection pulses of each source gas.

Abstract: A method of manufacturing a barrier metal layer uses atomic layer deposition (ALD) as the mechanism for depositing the barrier metal. The method includes supplying a first source gas onto the entire surface of a semiconductor substrate in the form of a pulse, and supplying a second source gas, which reacts with the first source gas, onto the entire surface of the semiconductor substrate in the form of a pulse. In a first embodiment, the pulses overlap in time so that the second source gas reacts with part of the first source gas physically adsorbed at the surface of the semiconductor substrate to thereby form part of the barrier metal layer by chemical vapor deposition whereas another part of the second source gas reacts with the first source gas chemically adsorbed at the surface of the semiconductor substrate to thereby form part of the barrier metal layer by atomic layer deposition. Thus, the deposition rate is greater than if the barrier metal layer were only formed by ALD.

Abstract: A method of forming a metal nitride film using chemical vapor deposition (CVD), and a method of forming a metal contact and a semiconductor capacitor of a semiconductor device using the same, are provided. The method of forming a metal nitride film using chemical vapor deposition (CVD) in which a metal source and a nitrogen source are used as a precursor, includes the steps of inserting a semiconductor substrate into a deposition chamber, flowing the metal source into the deposition chamber, removing the metal source remaining in the deposition chamber by cutting off the inflow of the metal source and flowing a purge gas into the deposition chamber, cutting off the purge gas and flowing the nitrogen source into the deposition chamber to react with the metal source adsorbed on the semiconductor substrate, and removing the nitrogen source remaining in the deposition chamber by cutting off the inflow of the nitrogen source and flowing the purge gas into the deposition chamber.