Abstract: A semiconductor memory device includes a memory cell array including a plurality of bank arrays and a control logic circuit. The control logic circuit controls access to the memory cell array in response to a command and an address. A first number of memory cells are coupled to a bit-line of a first bank array of the plurality of bank arrays, a second number of memory cells are coupled to a bit-line of a second bank array of the plurality of bank arrays and the first number is different from the second number.

Abstract: The present specification relates to a novel hetero-cyclic compound, and an organic light emitting device using the same.

Abstract: Disclosed are a bone conduction speaker module and bone conduction earphones having the bone conduction speaker modules. More particularly, the present invention relates to a bone conduction speaker module and bone conduction earphones having the bone conduction speaker modules, wherein the bone conduction speaker modules can accurately output sound, can stably output sound with fewer vibrations, enable a wearer to comfortably use the earphones, can prevent strain to the wearer by minimizing influence of magnetic force, can facilitate wearing of the earphones, and can prevent an accident from occurring by allowing the wearer to hear external sounds. To this end, a bone conduction speaker module used in earphones, headphones, and a hearing aid, includes: a housing including a first casing covering a portion coming into contact with a human body and a second casing covering a side of the first casing; a magnet part; and a voice coil part.

Abstract: A semiconductor memory device includes a memory cell array and a refresh control circuit. The memory cell array includes a plurality of memory cell rows. The refresh control circuit performs a normal refresh operation on the plurality of memory cell rows and performs a weak refresh operation on a plurality of weak pages of the plurality of memory cell rows. Each of the weak pages includes at least one weak cell whose data retention time is smaller than normal cells. The refresh control circuit transmits a refresh flag signal to a memory controller external to the semiconductor memory device when the refresh control circuit performs the weak refresh operation on the weak pages in a normal access mode.

Abstract: A variable intake system includes a pair of surge tanks connected in a communicating manner to a main intake pipe through a low speed communication pipe and a high speed communication pipe, a middle speed communication pipe for connecting the pair of surge tanks, and a noise reducing member integrally provided at the middle speed communication pipe to reduce noise.

Abstract: A semiconductor memory device includes a memory cell array and a refresh control circuit. The memory cell array includes a plurality of memory cell rows. The refresh control circuit performs a normal refresh operation on the plurality of memory cell rows and performs a weak refresh operation on a plurality of weak pages of the plurality of memory cell rows. Each of the weak pages includes at least one weak cell whose data retention time is smaller than normal cells. The refresh control circuit transmits a refresh flag signal to a memory controller external to the semiconductor memory device when the refresh control circuit performs the weak refresh operation on the weak pages in a normal access mode.

Abstract: A MRAM includes a memory cell array of spin-transfer torque magnetic random access memory (STT-MRAM) cells and a source line commonly connected to the plurality of STT-MRAM cells. A source line voltage generator generates a source line driving voltage in response to an external power supply voltage and provides the source line driving voltage to the source line.

Abstract: An intake system of an engine may include an intake line supplying an engine with air, an exhaust line that exhaust gas combusted in the cylinder is exhausted, a housing disposed on the intake line and a compressor is disposed therein, the compressor is operated by a turbine disposed on an exhaust line, a recirculation line that recirculates the air from the intake line of a downstream side of the compressor to the intake line of an upstream side of the compressor, and an anti surge valve disposed on the recirculation line to open/close the recirculation line, wherein a length of a first section (l) that is straight from the anti surge valve is longer than two times the outlet diameter (d) of the anti surge valve in the recirculation line that is formed from the anti surge valve to an upstream side of the compressor.

Abstract: A MRAM includes a memory cell array of spin-transfer torque magnetic random access memory (STT-MRAM) cells and a source line commonly connected to the plurality of STT-MRAM cells. A source line voltage generator generates a source line driving voltage in response to an external power supply voltage and provides the source line driving voltage to the source line.

Abstract: Provided is a synchronous dynamic random access memory (DRAM) semiconductor device including multiple output buffers, a strobe control unit and multiple strobe buffers. Each of the output buffers is configured to output one bit of data. The strobe control unit is configured to output multiple strobe control signals in response to an externally input signal. The strobe buffers are connected to the output buffers and the strobe control unit, and each of the strobe buffers is configured to output at least one strobe signal. At least some of the strobe buffers are activated in response to the strobe control signals, and the output buffers are activated in response to the strobe signals output by the activated strobe buffers.

Abstract: An intake system of an engine may include an intake line that is configured to supply cylinder of an engine with air, an exhaust line that exhaust gas combusted in the cylinder is exhausted, a housing disposed on the intake line and a compressor is disposed therein, the compressor is operated by a turbine disposed on an exhaust line, a recirculation line that recirculates the air from the intake line of a downstream side of the compressor to the intake line of an upstream side of the compressor, and an anti surge valve disposed on the recirculation line to open/close the recirculation line, wherein a length of a first section (l) that is straight from the anti surge valve is longer than two times the outlet diameter (d) of the anti surge valve in the recirculation line that is formed from the anti surge valve to an upstream side of the compressor.

Abstract: A turbocharger having an anti-surge valve may include a compressor that may be disposed at an intake line to compress intake air, and the anti-surge valve that selectively fluid-connects the downstream and the upstream of the compressor to circulate the intake air from the downstream to the upstream of the intake line, wherein a passage communicating with the downstream of the intake line may be formed in the anti-surge valve and the intake air flowing through the passage may be supplied to an edge portion outside a rotation center of a blade of the compressor.

Abstract: The present invention relates to a nitride micro light emitting diode (LED) with high brightness and a method of manufacturing the same. The present invention provides a nitride micro LED with high brightness and a method of manufacturing the same, wherein a plurality of micro-sized luminous pillars 10 are formed in a substrates, a gap filling material such as SiO2, Si3N4, DBR(ZrO2/SiO2HfO2/SiO2), polyamide or the like is filled in gaps between the micro-sized luminous pillars, a top surface 11 of the luminous pillar array and the gap filling material is planarized through a CMP processing, and then a transparent electrode 6 having a large area is formed thereon, so that all the luminous pillars can be driven at the same time. In addition, the present invention provides a nitride micro LED with high brightness in which uniformity in formation of electrodes on the micro-sized luminous pillars array is enhanced by employing a flip-chip structure.

Abstract: Provided is a synchronous dynamic random access memory (DRAM) semiconductor device including multiple output buffers, a strobe control unit and multiple strobe buffers. Each of the output buffers is configured to output one bit of data. The strobe control unit is configured to output multiple strobe control signals in response to an externally input signal. The strobe buffers are connected to the output buffers and the strobe control unit, and each of the strobe buffers is configured to output at least one strobe signal. At least some of the strobe buffers are activated in response to the strobe control signals, and the output buffers are activated in response to the strobe signals output by the activated strobe buffers.

Abstract: Exemplary embodiments relate to a control signal driving device of a semiconductor device, including: a bus line; a converter receiving a first periodic control signal having the period (frequency) of a clock signal, converting the first periodic control signal into a converted control signal that has twice the period (half the frequency) of the clock signal, and outputting the converted control signal to the bus line; and a restoring unit connected to the opposite end of the bus line and receiving the converted control signal and restoring the converted control signal back into the first periodic control signal.

Abstract: The present invention relates to a nitride micro light emitting diode (LED) with high brightness and a method of manufacturing the same. The present invention provides a nitride micro LED with high brightness and a method of manufacturing the same, wherein a plurality of micro-sized luminous pillars 10 are formed in a substrates, a gap filling material such as SiO2, Si3N4, DBR(ZrO2/SiO2HfO2/SiO2), polyamide or the like is filled in gaps between the micro-sized luminous pillars, a top surface 11 of the luminous pillar array and the gap filling material is planarized through a CMP processing, and then a transparent electrode 6 having a large area is formed thereon, so that all the luminous pillars can be driven at the same time. In addition, the present invention provides a nitride micro LED with high brightness in which uniformity in formation of electrodes on the micro-sized luminous pillars array is enhanced by employing a flip-chip structure.

Abstract: The present invention relates to a nitride micro light emitting diode (LED) with high brightness and a method of manufacturing the same. The present invention provides a nitride micro LED with high brightness and a method of manufacturing the same, wherein a plurality of micro-sized luminous pillars 10 are formed in a substrates, a gap filling material such as SiO2, Si3N4, DBR(ZrO2/SiO2 HfO2/SiO2), polyamide or the like is filled in gaps between the micro-sized luminous pillars, a top surface 11 of the luminous pillar array and the gap filling material is planarized through a CMP processing, and then a transparent electrode 6 having a large area is formed thereon, so that all the luminous pillars can be driven at the same time. In addition, the present invention provides a nitride micro LED with high brightness in which uniformity in formation of electrodes on the micro-sized luminous pillars array is enhanced by employing a flip-chip structure.

Abstract: The present invention relates to a nitride micro light emitting diode (LED) with high brightness and a method of manufacturing the same. The present invention provides a nitride micro LED with high brightness and a method of manufacturing the same, wherein a plurality of micro-sized luminous pillars 10 are formed in a substrates, a gap filling material such as SiO2, Si3N4, DBR(ZrO2/SiO2 HfO2/SiO2), polyamide or the like is filled in gaps between the micro-sized luminous pillars, a top surface 11 of the luminous pillar array and the gap filling material is planarized through a CMP processing, and then a transparent electrode 6 having a large area is formed thereon, so that all the luminous pillars can be driven at the same time. In addition, the present invention provides a nitride micro LED with high brightness in which uniformity in formation of electrodes on the micro-sized luminous pillars array is enhanced by employing a flip-chip structure.

Abstract: The present invention, related to a stereophonic apparatus having multiple switching function which mixes the sound signals output from multiple sound apparatuses to output them at once and enables to output multiply or selectively, has an audio signal generating unit for generating an audio signal, a sound signal controlling unit for outputting a sound signal to a sound signal input terminal of an external sound apparatus and controlling path of a sound signal output from a sound signal output terminal of said external sound apparatus, a mixing unit for generating a mixed sound signal by mixing an audio signal input from said audio signal generating unit and a sound signal input through said sound signal controlling unit, an audio amplifying unit for amplifying a mixed sound signal input from said mixing unit, and an output unit for outputting a mixed sound signal amplified by said audio amplifying unit.

Abstract: A method for doping Gallium Nitride (GaN) substrates is provided wherein Gallium (Ga) is transmuted to Germanium (Ge) by applying thermal neutron irradiation to a GaN substrate material or wafer. The Ge is introduced as an impurity in GaN and acts as a donor. The concentration of Ge introduced is controlled by the thermal neutron flux. When the thermal neutron irradiation is applied to a GaN wafer the fast neutrons are transmuted together with the former and cause defects such as the collapse of the crystallization. The GaN wafer is thermally treated or processed at a fixed temperature to eliminate such defects.