Abstract: An etching composition for silicon nitride comprising: a phosphoric acid compound; water; and at least one of a silane compound represented by Formula 1, below, and a reaction product thereof, and an etching method using the same are disclosed,

Abstract: An etching composition for silicon nitride comprising: a phosphoric acid compound; water; and at least one of a silane compound represented by Formula 1 and a reaction product thereof, and an etching method using the same are disclosed.

Abstract: A composition for forming a silica layer including a silicon-containing polymer having a weight average molecular weight of about 20,000 to about 70,000 and a polydispersity index of about 5.0 to about 17.0 and a solvent; a silica layer manufactured using the same; and an electronic device including the silica layer.

Abstract: A curable organo polysiloxane composition, an encapsulant, and an electronic device, the composition including at least one compound represented by the following Chemical Formula 1 and having a number average molecular weight of less than about 4,000, at least one first siloxane compound including a silicon-bonded hydrogen; and at least one second siloxane compound including a silicon-bonded alkenyl group:

Abstract: Disclosed are a curable polysiloxane composition for an optical device includes at least one of a first siloxane compound represented by the following Chemical Formula 1, at least one of a second siloxane compound having silicon-bonded hydrogen (Si—H) at the terminal end, and at least one of a third siloxane compound having a silicon-bonded alkenyl group (Si-Vi) at the terminal end, an encapsulant obtained by curing the curable polysiloxane composition for an optical device, and an optical device including the encapsulant. (R1R2R3SiO1/2)M1(R4R5SiO2/2)D1(R6R7SiO2/2)D2(R8SiO2/2—Y1—SiO2/2R9)D3(R10SiO3/2)T1(R11SiO3/2)T2(R12SiO3/2)T3(SiO3/2—Y2—SiO3/2)T4(SiO4/2)Q1??[Chemical Formula 1] In the above Chemical Formula 1, R1 to R12, Y1, Y2, M1, D1, D2, D3, T1, T2, T3, T4 and Q1 are the same as defined in the specification.

Abstract: Disclosed are a composition for an encapsulant that includes a first polysiloxane including a moiety represented by Chemical Formula 1 and an alkenyl group bound to silicon (Si—Vi) at the terminal end and a second polysiloxane including hydrogen bound to silicon (Si—H) at the terminal end, an encapsulant obtained by curing the composition for an encapsulant, and an electronic element including the encapsulant.

Abstract: A rinse solution for a silica thin film includes trimethylbenzene, diethylbenzene, indane, indene, tert-butyl toluene, methylnaphthalene, a mixture including an aromatic hydrocarbon having 12 or more carbon atoms, a mixture including an aliphatic hydrocarbon having 12 or more carbon atoms, a mixture including a hetero hydrocarbon compound including a phenyl group and an oxygen atom, or a combination thereof.

Abstract: A composition for forming a silica layer including a silicon-containing polymer having a weight average molecular weight of about 20,000 to about 70,000 and a polydispersity index of about 5.0 to about 17.0 and a solvent; a silica layer manufactured using the same; and an electronic device including the silica layer.

Abstract: A curable organo polysiloxane composition, an encapsulant, and an electronic device, the composition including at least one compound represented by the following Chemical Formula 1 and having a number average molecular weight of less than about 4,000, at least one first siloxane compound including a silicon-bonded hydrogen; and at least one second siloxane compound including a silicon-bonded alkenyl group:

Abstract: A resist underlayer composition and a method of manufacturing a semiconductor integrated circuit device, the composition including a solvent and an organosilane polymer, the organosilane polymer being a condensation polymerization product of at least one first compound represented by Chemical Formulae 1 and 2 and at least one second compound represented by Chemical Formulae 3 to 5.

Abstract: A curable organic polysiloxane composition includes (A) an amide compound represented by Chemical Formula 1, (B) at least one first siloxane compound including a silicon-bonded alkenyl group (Si-Vi) and including a moiety represented by Chemical Formula 2, and (C) at least one second siloxane compound having a silicon-bonded hydrogen (Si—H): where R, R1, R2, l, m, and n are as defined in the specification.

Abstract: Disclosed are a curable polysiloxane composition for an optical device includes at least one of a first siloxane compound represented by the following Chemical Formula 1, at least one of a second siloxane compound having silicon-bonded hydrogen (Si—H) at the terminal end, and at least one of a third siloxane compound having a silicon-bonded alkenyl group (Si-Vi) at the terminal end, an encapsulant obtained by curing the curable polysiloxane composition for an optical device, and an optical device including the encapsulant. (R1R2R3SiO1/2)M1(R4R5SiO2/2)D1(R6R7SiO2/2)D2(R8SiO2/2—Y1—SiO2/2R9)D3(R10SiO3/2)T1(R11SiO3/2)T2(R12SiO3/2)T3(SiO3/2—Y2—SiO3/2)T4(SiO4/2)Q1??[Chemical Formula 1] In the above Chemical Formula 1, R1 to R12, Y1, Y2, M1, D1, D2, D3, T1, T2, T3, T4 and Q1 are the same as defined in the specification.

Abstract: Disclosed are a composition for an encapsulant that includes a first polysiloxane including a moiety represented by Chemical Formula 1 and an alkenyl group bound to silicon (Si—Vi) at the terminal end and a second polysiloxane including hydrogen bound to silicon (Si—H) at the terminal end, an encapsulant obtained by curing the composition for an encapsulant, and an electronic element including the encapsulant.

Abstract: A resin for an encapsulation material includes a first polysiloxane including hydrogen bound to silicon (Si—H) at its terminal end, and a second polysiloxane including an alkenyl group bound to silicon (Si-Vi) at its terminal end, wherein a ratio (Si—H/Si-Vi) of hydrogen bound to silicon (Si—H) in the first polysiloxane to the alkenyl group bound to silicon (Si-Vi) in the second polysiloxane is about 1 to about 1.

Abstract: A resist underlayer composition includes a solvent and an organosilane condensation polymerization product, the organosilane condensation polymerization product including about 40 to about 80 mol % of a structural unit represented by the following Chemical Formula 1,

Abstract: A hardmask composition for forming a resist underlayer film, a process for producing a semiconductor integrated circuit device, and a semiconductor integrated circuit device, the hardmask composition including an organosilane polymer, a stabilizer, the stabilizer including methyl acetoacetate, ethyl-2-ethylacetoacetate, nonanol, decanol, undecanol, dodecanol, acetic acid, phenyltrimethoxysilane, diphenylhexamethoxydisiloxane, diphenylhexaethoxydisiloxane, dioctyltetramethyldisiloxane, tetramethyldisiloxane, decamethyltetrasiloxane, dodecamethylpentasiloxane, hexamethyldisiloxane, or mixtures thereof, and a solvent, wherein the solvent includes acetone, tetrahydrofuran, benzene, toluene, diethyl ether, chloroform, dichloromethane, ethyl acetate, propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate, ethyl lactate, ? butyrolactone, methyl isobutyl ketone, or mixtures thereof, the solvent is present in an amount of about 70 to about 99.

Abstract: A hardmask composition for processing a resist underlayer film includes a solvent and an organosilane polymer, wherein the organosilane polymer is represented by Formula 6: In Formula 6, R is methyl or ethyl, R? is substituted or unsubstituted cyclic or acyclic alkyl, Ar is an aromatic ring-containing functional group, x, y and z satisfy the relations x+y=4, 0.4?x?4, 0?y?3.6, and 4×10?4?z?1, and n is from about 3 to about 500.

Abstract: A resin for an encapsulation material includes a first polysiloxane including hydrogen bound to silicon (Si—H) at its terminal end, and a second polysiloxane including an alkenyl group bound to silicon (Si-Vi) at its terminal end, wherein a ratio (Si—H/Si-Vi) of hydrogen bound to silicon (Si—H) in the first polysiloxane to the alkenyl group bound to silicon (Si-Vi) in the second polysiloxane is about 1 to about 1.

Abstract: A polyorganosiloxane composition, an encapsulation material, and an electronic device, the polyorganosiloxane composition including a linear first polyorganosiloxane resin including a moiety represented by the following Chemical Formula 1 and a moiety represented by the following Chemical Formula 2, the first polyorganosiloxane resin including double bonds at both terminal ends thereof, and a second polyorganosiloxane resin having a three dimensional network structure,

Abstract: A resin for an encapsulation material includes a first polysiloxane including hydrogen bound to silicon (Si—H) at its terminal end, and a second polysiloxane including an alkenyl group bound to silicon (Si—Vi) at its terminal end, wherein a ratio (Si—H/Si—Vi) of hydrogen bound to silicon (Si—H) in the first polysiloxane to the alkenyl group bound to silicon (Si—Vi) in the second polysiloxane is about 1 to about 1.