Abstract: A photoresist underlayer composition includes a solvent, and a polysiloxane resin represented by Chemical Formula 1: {(SiO1.5—Y—SiO1.5)x(SiO2)y(XSiO1.5)z}(OH)e(OR1)f.

Abstract: A silicon-based hardmask composition, including an organosilane polymer represented by Formula 1: {(SiO1.5—Y—SiO1.5)x(R3SiO1.5)y(XSiO1.5)z}(OH)e(OR6)f??(1).

Abstract: A transparent resin for an encapsulation material, including a polymetallosiloxane obtained from at least one metal compound represented by Chemical Formulae 1A to 1D copolymerized with a silicon compound including a compound represented by Chemical Formula 2:

Abstract: A resin composition for a transparent encapsulation material, the resin composition including a polysiloxane obtained by copolymerization of a first silicon compound represented by the following Chemical Formula 1 and a second silicon compound including a compound represented by the following Chemical Formula 2,

Abstract: A hybrid siloxane polymer, an encapsulant, and an electronic device, the hybrid siloxane polymer including a linear first siloxane resin including moieties represented by the following Chemical Formulas 1a and 1b, the first siloxane resin including double bonds at both terminal ends thereof, and a second siloxane resin having a reticular structure:

Abstract: A photoresist underlayer composition includes a solvent, and a polysiloxane resin represented by Chemical Formula 1: {(SiO1.5—Y—SiO1.5)(SiO2)y(XSiO1.5)z}(OH)e(OR1)f.

Abstract: A resin composition for a transparent encapsulation material, the resin composition including a polysiloxane obtained by copolymerization of a first silicon compound represented by the following Chemical Formula 1 and a second silicon compound including a compound represented by the following Chemical Formula 2,

Abstract: A transparent resin for an encapsulation material, including a polymetallosiloxane obtained from at least one metal compound represented by Chemical Formulae 1A to 1D copolymerized with a silicon compound including a compound represented by Chemical Formula 2:

Abstract: A resist underlayer composition, including a solvent, and an organosilane condensation polymerization product including about 10 to about 40 mol % of a structural unit represented by Chemical Formula 1:

Abstract: A resist underlayer composition includes a solvent and an organosilane condensation polymerization product, the organosilane condensation polymerization product including about 40 to about 80 mol % of a structural unit represented by the following Chemical Formula 1,

Abstract: A hardmask composition includes a solvent and an organosilicon copolymer. The organosilicon copolymer may be represented by Formula A: (SiO1.5—Y—SiO1.5)x(R3SiO1.5)y??(A) wherein x and y may satisfy the following relations: x is about 0.05 to about 0.9, y is about 0.05 to about 0.9, and x+y=1, R3 may be a C1-C12 alkyl group, and Y may be a linking group including a substituted or unsubstituted, linear or branched C1-C20 alkyl group, a C1-C20 group containing a chain that includes an aromatic ring, a heterocyclic ring, a urea group or an isocyanurate group, or a C2-C20 group containing one or more multiple bonds.

Abstract: An encapsulation material and an electronic device, the encapsulation material including a resin, the resin including a first polysiloxane including hydrogen bonded with silicon (Si—H) at a terminal end thereof, and a second polysiloxane including an alkenyl group bonded with silicon (Si-Vi) at a terminal end thereof, a phosphor, and a density controlling agent, wherein a weight ratio of the density controlling agent to the phosphor is about 1.5:1 to about 10:1.

Abstract: A resin for an encapsulation material includes a first polysiloxane including hydrogen bound to silicon (Si—H) at its terminal end, and a second polysiloxane including an alkenyl group bound to silicon (Si-Vi) at its terminal end, wherein a ratio (Si—H/Si-Vi) of hydrogen bound to silicon (Si—H) in the first polysiloxane to the alkenyl group bound to silicon (Si-Vi) in the second polysiloxane is about 1 to about 1.

Abstract: A polyorganosiloxane composition, an encapsulation material, and an electronic device, the polyorganosiloxane composition including a linear first polyorganosiloxane resin including a moiety represented by the following Chemical Formula 1 and a moiety represented by the following Chemical Formula 2, the first polyorganosiloxane resin including double bonds at both terminal ends thereof, and a second polyorganosiloxane resin having a three dimensional network structure,

Abstract: A modified siloxane polymer composition, an encapsulant, and an electronic device, the modified siloxane polymer including a modified siloxane polymer and a reticular siloxane polymer, the modified siloxane polymer including a cyclic siloxane moiety having at least two Si—O bonds with a cyclic structure, a substituted or unsubstituted linear siloxane moiety linked to Si of the cyclic siloxane moiety with a C2 to C10 alkylene group therebetween, and double bonds at its terminal ends.

Abstract: A hybrid siloxane polymer, an encapsulant, and an electronic device, the hybrid siloxane polymer including a linear first siloxane resin including moieties represented by the following Chemical Formulas 1a and 1b, the first siloxane resin including double bonds at both terminal ends thereof, and a second siloxane resin having a reticular structure:

Abstract: A hardmask composition for forming a resist underlayer film, a process for producing a semiconductor integrated circuit device, and a semiconductor integrated circuit device, the hardmask composition including an organosilane polymer, and a stabilizer, the stabilizer including one of acetic anhydride, methyl acetoacetate, propionic anhydride, ethyl-2-ethylacetoacetate, butyric anhydride, ethyl-2-ethylacetoacetate, valeric anhydride, 2-methylbutyric anhydride, nonanol, decanol, undecanol, dodecanol, propylene glycol propyl ether, propylene glycol ethyl ether, propylene glycol methyl ether, propylene glycol, phenyltrimethoxysilane, diphenylhexamethoxydisiloxane, diphenylhexaethoxydisiloxane, dioctyltetramethyldisiloxane, hexamethyltrisiloxane, tetramethyldisiloxane, decamethyltetrasiloxane, dodecamethylpentasiloxane, hexamethyldisiloxane, and mixtures thereof.

Abstract: A silicon-based hardmask composition, including an organosilane polymer represented by Formula 1: {(SiO1.5—Y—SiO1.5)x(R3SiO1.5)y(XSiO1.5)z}(OH)e(OR6)f??(1).

Abstract: A resist underlayer composition and a method of manufacturing a semiconductor integrated circuit device, the composition including a solvent and an organosilane polymer, the organosilane polymer being a condensation polymerization product of at least one first compound represented by Chemical Formulae 1 and 2 and at least one second compound represented by Chemical Formulae 3 to 5.

Abstract: A resist underlayer composition and a method of manufacturing a semiconductor integrated circuit device, the resist underlayer composition including a solvent and an organosilane-based polymer, the organosilane-based polymer being a polymerization product of at least one first compound represented Chemical Formulae 1 to 3 and at least one second compound represented by Chemical Formulae 4 and 5.