Abstract: An operating method for a semiconductor memory device includes: generating a whole-domain-crossing-unit reset signal based on a domain-crossing-unit reset signal input to a whole-domain-crossing-unit-reset-signal generator; and resetting a counter synchronized to a data clock of a domain-crossing unit based on the whole-domain-crossing-unit reset signal during a data clock preparation section in which the data clock does not toggle.

Abstract: A semiconductor device includes a power gating control block and a power gating circuit. The power gating control block activates a data power control signal during a period that is set by a target code, the period being from a point in time in which the semiconductor device enters a read mode or a write mode. In addition, the power gating control block deactivates an operation power control signal in a power-down mode. The power gating circuit inhibits a data power signal from being supplied to a data input/output block based on the data power control signal. Moreover, the power gating control block inhibits an operation power signal from being supplied to an internal operation control block based on the operation power control signal.

Abstract: A semiconductor system includes a semiconductor device and a controller. The semiconductor device includes a first memory rank and is configured to perform, in response to receiving a first write command, a first write operation of writing first data to the first memory rank. The semiconductor device includes a second memory rank and is configured to perform, in response to receiving a second write command, a second write operation of writing second data to the second memory rank. The controller is configured to receive at least one write request and responsively generate the first and second write commands separated in time so that a transition time interval between generation of the first write command and generation of the second write command is based on the second memory rank being different from the first memory rank and based on a comparison of a write preamble period to a write post-amble period.

Abstract: A touch input device capable of detecting a pressure of a touch on a touch surface may be provided that includes: a display module; and a pressure sensor which is disposed at a position where a distance between the pressure sensor and a reference potential layer is changeable according to the touch on the touch surface. The distance is changeable according to a pressure magnitude of the touch. The pressure sensor outputs a signal including information on a capacitance which is changed according to the distance. The pressure sensor includes a plurality of electrodes to form a plurality of channels. The pressure magnitude of the touch is detected on the basis of a change amount of the capacitance detected in each of the channels. According to the embodiment of the present invention, it is possible to provide a pressure sensor for pressure detection, a touch input device including the same, and a pressure detection method using the same.

Abstract: An electrode sheet disposed in a touch input device capable of detecting a pressure of a touch on a touch surface may be provided. The touch input device includes: a display module; a pressure electrode disposed under the display module; and a reference pressure electrode disposed under the display module. A distance between the pressure electrode and a reference potential layer is changed when the pressure is applied to the touch surface. A capacitance detected at the pressure electrode is changed according to the distance change. A magnitude of the pressure applied to the touch surface is calculated on the basis of a difference between a reference capacitance calculated from a capacitance detected at the reference pressure electrode and a detected capacitance calculated from the capacitance detected at the pressure electrode.

Abstract: A semiconductor apparatus may include a logic circuit and a power control circuit. The logic circuit operates by being supplied with power through a power line. The power control circuit includes a plurality of power switches, and supplies a first power supply voltage and a second power supply voltage to the power line. When a mode of the semiconductor apparatus is changed, the power control circuit causes the plurality of power switches to sequentially stop supplying one of the first power supply voltage and the second power supply voltage to the power line, and then causes the plurality of power switches to sequentially supply the other of the first power supply voltage and the second power supply voltage to the power line.

Abstract: A semiconductor apparatus includes a transmission device and a receiving device. The transmission device generates an output signal from a transmission signal in synchronization with a clock signal. The receiving device generates a reception signal from the output signal in synchronization with the clock signal and a delayed clock signal generated by delaying the clock signal by a preset time, based on an operating speed of the semiconductor apparatus.

Abstract: An electrode sheet disposed in a touch input device capable of detecting a pressure of a touch on a touch surface may be provided. The touch input device includes: a display module; a pressure electrode disposed under the display module; and a reference pressure electrode disposed under the display module. A distance between the pressure electrode and a reference potential layer is changed when the pressure is applied to the touch surface. A capacitance detected at the pressure electrode is changed according to the distance change. A magnitude of the pressure applied to the touch surface is calculated on the basis of a difference between a reference capacitance calculated from a capacitance detected at the reference pressure electrode and a detected capacitance calculated from the capacitance detected at the pressure electrode.

Abstract: A semiconductor device includes a data detection circuit configured to detect a number of bits having a predetermined logic level among bits included in data to generate a detection signal. The semiconductor device also includes a selection/transmission circuit configured to output the detection signal or a control data signal as a pre-masking signal based on a selection/transmission signal. The semiconductor device further includes a masking signal generation circuit configured to latch the pre-masking signal based on a pipe input control signal and configured to output the latched signal of the pre-masking signal as a masking signal for controlling a data masking operation based on a pipe output control signal.

Abstract: A semiconductor apparatus may include a synchronization circuit, and a phase detection circuit. The synchronization circuit may be configured to, based on an operation mode of the semiconductor apparatus, divide a first clock signal to generate first and second divided clock signals or divide a phase-locked clock signal to generate first and second divided clock signals. The phase detection circuit may be configured to use, based on the operation mode of the semiconductor apparatus, either the first and second clock signals created from dividing the first clock signal or the first and second clock signals created from dividing the phase-locked clock signal, to compare either the first divided clock signal or the second divided clock signal with a second clock signal to generate a phase detection signal.

Abstract: An electrode sheet disposed in a touch input device capable of detecting a pressure of a touch on a touch surface may be provided. The touch input device includes: a display module; a pressure electrode disposed under the display module; and a reference pressure electrode disposed under the display module. A distance between the pressure electrode and a reference potential layer is changed when the pressure is applied to the touch surface. A capacitance detected at the pressure electrode is changed according to the distance change. A magnitude of the pressure applied to the touch surface is calculated on the basis of a difference between a reference capacitance calculated from a capacitance detected at the reference pressure electrode and a detected capacitance calculated from the capacitance detected at the pressure electrode.

Abstract: An operating method for a semiconductor memory device includes: generating a whole-domain-crossing-unit reset signal based on a domain-crossing-unit reset signal input to a whole-domain-crossing-unit-reset-signal generator; and resetting a counter synchronized to a data clock of a domain-crossing unit based on the whole-domain-crossing-unit reset signal during a data clock preparation section in which the data clock does not toggle.

Abstract: A semiconductor apparatus includes a transmission device and a receiving device. The transmission device generates an output signal from a transmission signal in synchronization with a clock signal. The receiving device generates a reception signal from the output signal in synchronization with the clock signal and a delayed clock signal generated by delaying the clock signal by a preset time, based on an operating speed of the semiconductor apparatus.

Abstract: A touch pressure sensitivity correction method may be provided that includes: defining a plurality of reference points on a touch sensor panel; generating a reference data for a capacitance change amount sensed by applying the same pressure to the plurality of reference points; generating an interpolated data corresponding to a capacitance change amount for a random point present between the plurality of reference points; calculating, on the basis of the reference data and interpolated data, with respect to the reference points and the random point respectively, a correction factor for correcting a sensitivity of a touch input device to a target value; and correcting uniformly for the touch pressure sensitivity of the touch input device by applying the calculated correction factor to each corresponding point.

Abstract: A sensitivity compensation method of a touch input device sensing a touch pressure may be provided. The sensitivity compensation method includes: detecting a capacitance change amount by applying a pressure to a plurality of points defined on a touch sensor panel; generating a raw data for the capacitance change amount of the defined point; generating a decimal value data for each of the sets by dividing a data value within the set by a maximum value within the set; calculating an average value of each defined point; generating a representative value data by calculating a value corresponding to all the points of the touch sensor panel; calculating a balance factor on the basis of the representative value data; and compensating for a touch pressure sensitivity of the touch input device by using the balance factor.

Abstract: A semiconductor apparatus may include a synchronization circuit, and a phase detection circuit. The synchronization circuit may be configured to, based on an operation mode of the semiconductor apparatus, divide a first clock signal to generate first and second divided clock signals or divide a phase-locked clock signal to generate first and second divided clock signals. The phase detection circuit may be configured to use, based on the operation mode of the semiconductor apparatus, either the first and second clock signals created from dividing the first clock signal or the first and second clock signals created from dividing the phase-locked clock signal, to compare either the first divided clock signal or the second divided clock signal with a second clock signal to generate a phase detection signal.

Abstract: A touch input device capable of detecting a pressure of a touch on a touch surface may be provided that includes: a display module; and a pressure sensor which is disposed at a position where a distance between the pressure sensor and a reference potential layer is changeable according to the touch on the touch surface. The distance is changeable according to a pressure magnitude of the touch. The pressure sensor outputs a signal including information on a capacitance which is changed according to the distance. The pressure sensor includes a plurality of electrodes to form a plurality of channels. The pressure magnitude of the touch is detected on the basis of a change amount of the capacitance detected in each of the channels. According to the embodiment of the present invention, it is possible to provide a pressure sensor for pressure detection, a touch input device including the same, and a pressure detection method using the same.

Abstract: A touch input device capable of detecting a pressure of a touch on a touch surface may be provided. The touch input device includes: a display module; and a pressure sensor which is disposed at a position where a distance between the pressure sensor and a reference potential layer is changeable according to the touch on the touch surface. The distance is changeable according to a pressure magnitude of the touch. The pressure sensor outputs a signal including information on a capacitance which is changed according to the distance. The pressure sensor includes a plurality of electrodes to form a plurality of channels. The pressure magnitude of the touch is detected on the basis of a change amount of the capacitance detected in each of the channels and an SNR improvement scaling factor assigned to each of the channels.

Abstract: An electrode sheet including an electrode layer and a support layer may be provided. The electrode layer includes a first electrode and a second electrode. The electrode sheet is used to detect a capacitance change between the first electrode and the second electrode, which is changed according to a relative distance change between the electrode layer and a reference potential layer disposed apart from the electrode sheet. The support layer is made of a material which is bent when a pressure is applied thereto and which is restored to its original state when the pressure is released therefrom.

Abstract: An electrode sheet disposed in a touch input device capable of detecting a pressure of a touch on a touch surface may be provided. The touch input device includes: a display module; a pressure electrode disposed under the display module; and a reference pressure electrode disposed under the display module. A distance between the pressure electrode and a reference potential layer is changed when the pressure is applied to the touch surface. A capacitance detected at the pressure electrode is changed according to the distance change. A magnitude of the pressure applied to the touch surface is calculated on the basis of a difference between a reference capacitance calculated from a capacitance detected at the reference pressure electrode and a detected capacitance calculated from the capacitance detected at the pressure electrode.