Abstract: Semiconductor device includes a pad for outputting a cyclic redundancy check (CRC) data for error detection and a signal outputting unit for outputting the CRC data or a data strobe signal, which is output together with data of being output in response to a read command, through the pad according to operation modes. Method for operating a semiconductor device provided a step of outputting a CRC data for error detection through a CRC data pad and a step of outputting a data strobe signal, which is output together with data output in response to a read command, through the CRC data pad according to an operation mode.

Abstract: Semiconductor memory device for high-speed data input/output includes a first serializer configured to partially serialize input 8-bit parallel data to output first to fourth serial data, a second serializer configured to partially serialize the first to fourth serial data to output fifth and sixth serial data and a third serializer configured to serialize the fifth and sixth serial data to output seventh serial data.

Abstract: A data output circuit of a semiconductor memory apparatus includes: a control unit that outputs a first standby instruction signal, a second standby instruction signal, a first output instruction signal, and a second output instruction signal in response to an input of a standby instruction signal, an output instruction signal, a first test signal, and a second test signal; a first output driver that causes first data to be output or to enter a standby state according to whether or not the first standby instruction signal or the first output instruction signal is enabled; and a second output driver that causes second data to be output or to enter a standby state according to whether or not the second standby instruction signal or the second output instruction signal is enabled.

Abstract: A semiconductor memory device includes a first buffering unit configured to buffer a first clock for an address signal and a command to be input in synchronization with the first clock, a second buffering unit configured to buffer a second clock for a data signal to be in synchronization with the second clock to output a buffered second clock having the same frequency as the first clock, a data output circuit configured to output an internal data in response to the buffered second clock, a delay unit configured to delay the buffered second clock by a predetermined time, and a phase detector configured to detect a phase difference of an output clock of the delay unit and the output clock of the first buffering unit, and to output the detection result.

Abstract: The internal read signal generator according to the present invention includes: a first delay unit for delaying a clock signal in order to obtain a margin of a setup/hold time of an input signal; a signal transfer unit for transferring the input signal in synchronization with the delayed clock signal of the first delay unit; a second delay unit for delaying an output signal of the signal transfer unit; and an output unit for combining the input signal and an output signal of the second delay unit, wherein an amount of the delay of the second delay unit is determined in order that a rising edge of an output signal of the output unit has a period of the clock signal.

Abstract: A multi-phase pulse generator provides an even number of pulse signals of same phase difference and pulse signals of higher frequency by applying a negative delay concept. The multi-phase pulse generator includes a first delay block with first unit blocks which have a first negative delay property respectively and of which an even number is ring-coupled; and a second delay block including second unit blocks which have a second negative delay property respectively and of which even number is ring-coupled. The number of the first unit block and the number of the second unit block are the same. A plurality of output nodes is formed based on one-to-one sharing between the first unit block and the second unit block having output signals of different level. Each output node outputs a pulse generated by racing the output signals of different level to each other which are provided from the first unit block and the second unit block connected to the each output node.

Abstract: A semiconductor memory device is capable of generating a desired output enable signal without increasing an initial count value and bit number and generating a desired final output enable signal, without unnecessary reset operations, by reflecting CAS latency information on an external clock count value. The semiconductor memory device includes a first output enable signal generating unit configured to compare a first count value, which is obtained by counting a delay locked loop (DLL) clock, with a second clock count value, which is obtained by counting an external clock until a read command is input, and output a first output enable signal, and a final output enable signal generating unit configured to output, as a final output enable signal, one of the first output enable signal and a plurality of output enable signals generated by shifting the first output enable signal, according to a column address strobe (CAS) latency.

Abstract: An apparatus for generating error detection codes can include an error detection code generation unit configured to generate virtual error detection codes using virtual DBI information and data, and an error detection code regeneration unit configured to generate error detection codes using even and odd number information which define whether the number of data associated with the generation of the error detection codes is even or odd, DBI information associated with the even and odd number information, and the virtual error detection codes.

Abstract: A semiconductor memory apparatus having a write training function includes a storage unit that stores write data or read data output from a memory cell block and outputs data according to an output control signal, and a control unit that controls the output control signal to be generated at different timings according to whether or not a write training signal is activated.

Abstract: A semiconductor memory apparatus capable of detecting an error in data input/output includes a memory cell block including a plurality of memory cells. A data input unit receives data from outside the semiconductor memory apparatus and performs predetermined signal processing to record the received data in the memory cell block. A first global data line is connected between the data input unit and the memory cell block. A data output unit receives data from the memory cell block and performs predetermined signal processing to output the received data to the outside of the semiconductor memory apparatus. A second global data line is connected between the memory cell block and the data output unit. A multiplexer selectively outputs data from the first or second global data line in response to a control signal.

Abstract: A memory apparatus includes: a memory cell block; a data input part that performs signal processing to transmit general data and mask information input to the semiconductor memory apparatus to the memory cell block, and outputs the processed data and information; a broadband data line connected between the data input part and the memory cell block; a plurality of registers connected to the broadband data line that writes mask information transmitted through the broadband data line; and a multiplexer that selects mask information from one of the plurality of registers in response to a mask information selection signal, and outputs the selected mask information to the memory cell block.

Abstract: The internal read signal generator according to the present invention includes: a first delay unit for delaying a clock signal in order to obtain a margin of a setup/hold time of an input signal; a signal transfer unit for transferring the input signal in synchronization with the delayed clock signal of the first delay unit; a second delay unit for delaying an output signal of the signal transfer unit; and an output unit for combining the input signal and an output signal of the second delay unit, wherein an amount of the delay of the second delay unit is determined in order that a rising edge of an output signal of the output unit has a period of the clock signal.

Abstract: A data input apparatus includes: a phase detector comparing a phase of a data strobe signal with a phase of a clock signal to output a first phase comparison signal and a second phase comparison signal. A first delay controller determines whether a first data input strobe signal is delayed to output the determined signal as a second data input strobe signal in response to the first phase comparison signal. An internal clock synchronizer synchronizes first aligned data and second aligned data with the clock signal in response to the second data input strobe signal, to output the synchronized first and second data as first internal output data and second internal output data, respectively. A second delay controller determines whether the first internal output data and the second internal output data is delayed in response to the second phase comparison signal, to output the first internal output data and the second internal output data as first output data and second output data, respectively.

Abstract: A data output circuit of a semiconductor memory apparatus includes: a control unit that outputs a first standby instruction signal, a second standby instruction signal, a first output instruction signal, and a second output instruction signal in response to an input of a standby instruction signal, an output instruction signal, a first test signal, and a second test signal; a first output driver that causes first data to be output or to enter a standby state according to whether or not the first standby instruction signal or the first output instruction signal is enabled; and a second output driver that causes second data to be output or to enter a standby state according to whether or not the second standby instruction signal or the second output instruction signal is enabled.

Abstract: An apparatus for controlling a latency in a synchronous semiconductor device. The apparatus includes a first counting block for counting a cycle of a first clock signal to thereby generate a first binary code; a second counting block for counting a cycle of a second clock signal to thereby generate a second binary code. The second clock signal is obtained by delaying the first clock signal by a predetermined delay amount, A code comparison block stores the second binary code in response to a command and compares the first binary code with the second binary code to thereby generate a latency control signal.

Abstract: Provided is directed to a block selection circuit, comprising a reference fuse block by copying fuse blocks to output a reference signal later than or at the same time to decision signals which are outputted from fuse blocks which distinguish whether an external address is a repair address or not according to fuse cutting states and an external address, capable of improving speed of the block selection circuit by removing delay units by means of generating a spare row enable signal later than decision signals using the reference signal, and available to assure stability of an operation because the reference fuse block is similarly changeable, although outputting speeds of decision signals from fuse blocks are variable according to a process, a temperature, a driving voltage, and so on.

Abstract: The present invention discloses a digital control logic circuit having a characteristic of time hysteresis for controlling transition of a digital control signal for a predetermined period, comprising a first time hysteresis unit, a second time hysteresis unit and an inverter. The first time has the characteristic of time hysteresis when an input signal transits from a first level to a second level. The second time hysteresis unit has the characteristic of time hysteresis connected to the first hysteresis in series when the input signal transits from the second level to the first level.

Abstract: The present invention discloses a digital control logic circuit having a characteristic of time hysteresis for controlling transition of a digital control signal for a predetermined period, comprising a first time hysteresis unit, a second time hysteresis unit and an inverter. The first time has the characteristic of time hysteresis when an input signal transits from a first level to a second level. The second time hysteresis unit has the characteristic of time hysteresis connected to the first hysteresis in series when the input signal transits from the second level to the first level.