Patents by Inventor Sang Tae Ahn
Sang Tae Ahn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250133887Abstract: A display device includes a display panel including a display area and a non-display area adjacent to a side of the display area, and a residue trace disposed on the display panel, and disposed on the display area and the non-display area, wherein an outer boundary of the residue trace is adjacent to an edge portion of the display panel, and disposed to be closer to a center portion of the display panel than the edge portion of the display panel.Type: ApplicationFiled: June 21, 2024Publication date: April 24, 2025Applicant: Samsung Display Co., LTD.Inventors: Seung Wook KWON, Hyo Young MUN, Sun Hwa KIM, Seung Yong SONG, Chang Woo SHIM, Sang Tae AHN, Yi Seul UM, Hee Chang YOON, Seung Yeon CHAE
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Publication number: 20240249774Abstract: Provided herein may be a memory device and a method of operating the same. The memory device may include a memory block including strings, each including first memory cells coupled between a first dummy cell and a second dummy cell and second memory cells coupled between third dummy cell and fourth dummy cell, and a peripheral circuit performing a normal program operation on first and second memory cells, or a soft program operation on first to fourth dummy cells, wherein the peripheral circuit is configured to, perform a soft program operation on the fourth dummy cell which is farthest from an area to which the precharge voltage is applied and perform a normal program operation on second memory cells, wherein the precharge voltage is applied to the area during the normal program operation, and wherein the area is adjacent to the first dummy cells.Type: ApplicationFiled: July 20, 2023Publication date: July 25, 2024Applicant: SK hynix Inc.Inventors: Sang Tae AHN, Sung Min LEE
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Publication number: 20230032393Abstract: A display device includes, a display panel including a light-emitting element layer disposed on a substrate, a thin-film encapsulation layer disposed on the light-emitting element layer, a touch electrode layer disposed on the thin-film encapsulation layer, a display area, the light-emitting element layer being located in the display area, and a non-display area disposed around the display area, and a resin pattern disposed on and directly contacting the touch electrode layer. The non-display area includes a first non-display area disposed around the display area, and a second non-display area spaced apart from the display area, the first non-display area being disposed between the display area and the second non-display area in a plan view. The resin pattern is disposed in the second non-display area in a plan view.Type: ApplicationFiled: March 28, 2022Publication date: February 2, 2023Applicant: Samsung Display Co., LTD.Inventors: Seung Wook KWON, Seo Yeon LEE, Seung Gun CHAE, Sang Tae AHN, Seung Yeon CHAE
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Patent number: 11145675Abstract: A semiconductor device includes stack structures each including a first conductive layer, a substrate disposed under the stack structures, first impurity regions disposed in the substrate, and at least one trench passing through the stack structures and disposed above the first impurity regions.Type: GrantFiled: May 15, 2020Date of Patent: October 12, 2021Assignee: SK hynix Inc.Inventors: Yung Jun Kim, Won Hyo Cha, Byung Soo Park, Sang Tae Ahn, Sung Jae Chung
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Publication number: 20200279865Abstract: A semiconductor device includes stack structures each including a first conductive layer, a substrate disposed under the stack structures, first impurity regions disposed in the substrate, and at least one trench passing through the stack structures and disposed above the first impurity regions.Type: ApplicationFiled: May 15, 2020Publication date: September 3, 2020Applicant: SK hynix Inc.Inventors: Yung Jun KIM, Won Hyo CHA, Byung Soo PARK, Sang Tae AHN, Sung Jae CHUNG
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Patent number: 10692885Abstract: A semiconductor device includes stack structures each including a first conductive layer, a substrate disposed under the stack structures, first impurity regions disposed in the substrate, and at least one trench passing through the stack structures and disposed above the first impurity regions.Type: GrantFiled: October 25, 2018Date of Patent: June 23, 2020Assignee: SK hynix Inc.Inventors: Yung Jun Kim, Won Hyo Cha, Byung Soo Park, Sang Tae Ahn, Sung Jae Chung
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Publication number: 20190287999Abstract: A semiconductor device includes stack structures each including a first conductive layer, a substrate disposed under the stack structures, first impurity regions disposed in the substrate, and at least one trench passing through the stack structures and disposed above the first impurity regions.Type: ApplicationFiled: October 25, 2018Publication date: September 19, 2019Applicant: SK hynix Inc.Inventors: Yung Jun KIM, Won Hyo CHA, Byung Soo PARK, Sang Tae AHN, Sung Jae CHUNG
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Patent number: 10290355Abstract: In a method of programming a semiconductor memory device, during a standby period, a standby voltage is applied to word lines coupled to a plurality of memory cells included in a selected memory cell string, and, during a first program period, a first pre-bias voltage is applied to a word line coupled to at least one of programmed memory cells of the selected memory cell string. The first pre-bias voltage is greater than the standby voltage.Type: GrantFiled: April 9, 2018Date of Patent: May 14, 2019Assignee: SK hynix Inc.Inventors: Eun Mee Kwon, Ji Seon Kim, Sang Tae Ahn
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Publication number: 20180226129Abstract: In a method of programming a semiconductor memory device, during a standby period, a standby voltage is applied to word lines coupled to a plurality of memory cells included in a selected memory cell string, and, during a first program period, a first pre-bias voltage is applied to a word line coupled to at least one of programmed memory cells of the selected memory cell string. The first pre-bias voltage is greater than the standby voltage.Type: ApplicationFiled: April 9, 2018Publication date: August 9, 2018Applicant: SK hynix Inc.Inventors: Eun Mee KWON, Ji Seon KIM, Sang Tae AHN
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Patent number: 10022082Abstract: An apparatus and a method is provided for detecting biometric signals of a driver and classifying the driver into a normal state or a fatigued state based on the biometric signals. An apparatus may include: a biometric signal measuring part configured to measure the biometric signals including a blood flow rate of a brain of the driver using an electro-encephalography (EEG), an electro-cardiography (ECG), and a functional near-infrared spectroscopy (fNIRS) of the driver; a biometric signal integral part configured to integrate the measured biometric signals, to extract characteristics of the respective biometric signals from the measured biometric signals and to then integrate the extracted characteristics, or to classify the extracted characteristics of the biometric signals and to then integrate the classified characteristics; and a driver state detecting part configured to detect the state of the driver based on the integrated biometric signals.Type: GrantFiled: November 18, 2016Date of Patent: July 17, 2018Assignees: Hyundai Motor Company, Kia Motors Corporation, Gwangju Institute of Science and TechnologyInventors: Nam Woong Hur, Seul Ki Jeon, Hyun Sang Kim, Eung Hwan Kim, Sang Tae Ahn, Hyo Jung Jang, Sung Chan Jun
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Patent number: 9966144Abstract: In a method of programming a semiconductor memory device, during a standby period, a standby voltage is applied to word lines coupled to a plurality of memory cells included in a selected memory cell string, and, during a first program period, a first pre-bias voltage is applied to a word line coupled to at least one of programmed memory cells of the selected memory cell string. The first pre-bias voltage is greater than the standby voltage.Type: GrantFiled: March 13, 2017Date of Patent: May 8, 2018Assignee: SK hynix Inc.Inventors: Eun Mee Kwon, Ji Seon Kim, Sang Tae Ahn
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Publication number: 20180005696Abstract: In a method of programming a semiconductor memory device, during a standby period, a standby voltage is applied to word lines coupled to a plurality of memory cells included in a selected memory cell string, and, during a first program period, a first pre-bias voltage is applied to a word line coupled to at least one of programmed memory cells of the selected memory cell string. The first pre-bias voltage is greater than the standby voltage.Type: ApplicationFiled: March 13, 2017Publication date: January 4, 2018Applicant: SK hynix Inc.Inventors: Eun Mee KWON, Ji Seon KIM, Sang Tae AHN
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Publication number: 20170367635Abstract: An apparatus and a method is provided for detecting biometric signals of a driver and classifying the driver into a normal state or a fatigued state based on the biometric signals. An apparatus may include: a biometric signal measuring part configured to measure the biometric signals including a blood flow rate of a brain of the driver using an electro-encephalography (EEG), an electro-cardiography (ECG), and a functional near-infrared spectroscopy (fNIRS) of the driver; a biometric signal integral part configured to integrate the measured biometric signals, to extract characteristics of the respective biometric signals from the measured biometric signals and to then integrate the extracted characteristics, or to classify the extracted characteristics of the biometric signals and to then integrate the classified characteristics; and a driver state detecting part configured to detect the state of the driver based on the integrated biometric signals.Type: ApplicationFiled: November 18, 2016Publication date: December 28, 2017Applicants: HYUNDAI MOTOR COMPANY, KIA MOTORS CORPORATION, GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Nam Woong HUR, Seul Ki JEON, Hyun Sang KIM, Eung Hwan KIM, Sang Tae AHN, Hyo Jung JANG, Sung Chan JUN
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Patent number: 9695836Abstract: Provided is a fly wheel, including: a fly wheel body provided with a receiving part in which air is filled and mounted on driving shaft; a blade radially coupled to the fly wheel body, including a ventilation passage formed therein to be communicated with the receiving part and a puncturing part formed on an outer race thereof to be communicated with the ventilation passage, and generating thrust by discharging the air filled in the receiving part to the puncturing part at the time of rotating the driving shaft; and a check valve installed on the fly wheel body and being opened and closed by a pressure difference between the receiving part and the outside.Type: GrantFiled: July 3, 2013Date of Patent: July 4, 2017Inventors: Sang Tae Ahn, Chun Young Ahn
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Publication number: 20150260196Abstract: Provided is a fly wheel, including: a fly wheel body provided with a receiving part in which air is filled and mounted on driving shaft; a blade radially coupled to the fly wheel body, including a ventilation passage formed therein to be communicated with the receiving part and a puncturing part formed on an outer race thereof to be communicated with the ventilation passage, and generating thrust by discharging the air filled in the receiving part to the puncturing part at the time of rotating the driving shaft; and a check valve installed on the fly wheel body and being opened and closed by a pressure difference between the receiving part and the outside.Type: ApplicationFiled: July 3, 2013Publication date: September 17, 2015Inventors: Sang Tae AHN, Chun Young AHN
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Publication number: 20150221385Abstract: A semiconductor memory device includes a plurality of normal memory cells stacked over a substrate and coupled in series with each other, a plurality of selection transistors coupled in series, and one or more dummy memory cells coupled between the plurality of normal memory cells and the plurality of selection transistors, wherein the plurality of selection transistors includes first and second selection transistors, and the first selection transistor is adjacent to the dummy memory cells, and has a lower threshold voltage than the second selection transistor.Type: ApplicationFiled: July 16, 2014Publication date: August 6, 2015Inventors: Sang Tae AHN, Gyu Seog CHO
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Patent number: 8999784Abstract: A method of manufacturing a semiconductor device includes forming first auxiliary patterns, alternately forming first material layers and second material layers on the sidewalls of the first auxiliary patterns so that a gap region between the first auxiliary patterns adjacent to each other is filled, removing the second material layers, and forming charge storage layers in respective regions from which the second material layers have been removed.Type: GrantFiled: September 1, 2012Date of Patent: April 7, 2015Assignee: SK Hynix Inc.Inventor: Sang Tae Ahn
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Patent number: 8863636Abstract: Disclosed are a soft recoil system and a cannon having the same. The soft recoil system includes: a cannon barrel returning device mounted to a recoil device for absorbing a recoil force occurring when ammunition is fired, and configured to backward press a breech ring, such that the cannon barrel is fixed to a preset position; a cannon barrel fixing device installed at the recoil device, and configured to fix the cannon barrel when the cannon barrel returns to the fixed position; and a forward momentum generator connected to the recoil device and the breech ring, respectively, configured to forward move the cannon barrel by applying a force to the breech ring, such that the ammunition is fired while the cannon barrel forward moves, and configured to reduce a recoil force by partially attenuating recoil momentum resulting from the firing of the ammunition, by forward momentum.Type: GrantFiled: November 16, 2012Date of Patent: October 21, 2014Assignee: Agency for Defense DevelopmentInventors: Sang-Tae Ahn, Kuk-Jeong Kang, Chang-Ki Cho, Sang-Bae Jun
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Publication number: 20130269507Abstract: Disclosed are a soft recoil system and a cannon having the same. The soft recoil system includes: a cannon barrel returning device mounted to a recoil device for absorbing a recoil force occurring when ammunition is fired, and configured to backward press a breech ring, such that the cannon barrel is fixed to a preset position; a cannon barrel fixing device installed at the recoil device, and configured to fix the cannon barrel when the cannon barrel returns to the fixed position; and a forward momentum generator connected to the recoil device and the breech ring, respectively, configured to forward move the cannon barrel by applying a force to the breech ring, such that the ammunition is fired while the cannon barrel forward moves, and configured to reduce a recoil force by partially attenuating recoil momentum resulting from the firing of the ammunition, by forward momentum.Type: ApplicationFiled: November 16, 2012Publication date: October 17, 2013Inventors: Sang-Tae AHN, Kuk-Jeong KANG, Chang-Ki CHO, Sang-Bae JUN
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Patent number: 8555767Abstract: An apparatus for collecting empty cannon cartridges a bracket spacedly disposed from one or more surfaces of a breech ring for accommodating a cannon barrel therein; an operation pin mounted to the breech ring adjacent to the bracket; an upper link rotatably mounted to one surface of the bracket, and configured to slidingy contact the operation pin; a lower link concentric with the upper link, rotatably mounted to one surface of the bracket, and rotating together with the upper link by being engaged with the upper link at a specific angle; and a collecting unit having one end connected to the lower link, and configured to be unfolded such that empty cartridges extracted from the cannon barrel are collected. When the cannon barrel moves forward, the lower link rotates by being engaged with the upper link as the operation pin slides on the upper link, and the collecting unit is unfolded such that the empty cartridges are collected.Type: GrantFiled: December 27, 2011Date of Patent: October 15, 2013Assignee: Agency for Defense DevelopmentInventors: Sang-Tae Ahn, Kuk-Jeong Kang, Suk-Kyun Hong, Chul-Mo Yeo