Patents by Inventor Sang Tae Ahn

Sang Tae Ahn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming flowable dielectric layer in semiconductor device
    Publication number: 20050020093
    Abstract: The method for forming a flowable dielectric layer is employed to use a barrier layer on sidewalls of patterned flowable dielectrics, thereby preventing a bridge phenomenon between adjacent contact plugs.
    Type: Application
    Filed: December 19, 2003
    Publication date: January 27, 2005
    Inventors: Sang-Tae Ahn, Dong-Sun Sheen, Seok-Pyo Song
  • Method for fabricating isolation layer in semiconductor device
    Publication number: 20040214405
    Abstract: A method for fabricating an isolation layer in a semiconductor device is disclosed. The disclosed method comprises steps of: forming a trench on a semiconductor substrate; forming a flowing insulating layer within the trench; making the insulating layer precise; and forming a precise insulating layer over an upper surface of the whole structure on which the flowing insulating layer is formed. According to the method of fabricating an isolation layer in a semiconductor device, occurrence of fine pores at adjacent active regions of sidewalls in a trench can be prevented.
    Type: Application
    Filed: December 17, 2003
    Publication date: October 28, 2004
    Inventors: Sang Tae Ahn, Sung Woong Chung, Hyun Chul Sohn
  • Method of manufacturing an insulation film in a semiconductor device
    Patent number: 6627533
    Abstract: A method of manufacturing an insulating film in a semiconductor device is disclosed. The method comprises the steps of forming a SOD film on the entire structure to fill any distance between conductive layer patterns and after performing a curing process, forming a hard mask film on the SOD film, wherein the silicon oxide film is deposited by plasma deposition method using SiH4 and N2O as a reaction gas at a low-temperature and at a low-pressure and wherein in a stabilization step, the supply amount of SiH4 is greater than that of N2O and in a deposition step, the supply amount of N2O is greater than that of SiH4.
    Type: Grant
    Filed: June 13, 2001
    Date of Patent: September 30, 2003
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Sang Tae Ahn, Jung Gyu Song
  • Method of manufacturing an insulation film in a semiconductor device
    Publication number: 20020000667
    Abstract: A method of manufacturing an insulating film in a semiconductor device is disclosed. The method comprises the steps of forming a SOD film on the entire structure to fill any distance between conductive layer patterns and after performing a curing process, forming a hard mask film on the SOD film, wherein the silicon oxide film is deposited by plasma deposition method using SiH4 and N2O as a reaction gas at a low-temperature and at a low-pressure and wherein in a stabilization step, the supply amount of SiH4 is greater than that of N2O and in a deposition step, the supply amount of N2O is greater than that of SiH4.
    Type: Application
    Filed: June 13, 2001
    Publication date: January 3, 2002
    Inventors: Sang Tae Ahn, Jung Gyu Song