Patents by Inventor Sang-Uk Son
Sang-Uk Son has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210313954Abstract: A bulk-acoustic wave resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer disposed to cover at least a portion of the first electrode; a second electrode disposed to cover at least a portion of the piezoelectric layer; a metal pad connected to the first electrode and the second electrode; and a connection member connected an upper surface of the metal pad. A lower end portion of the connection member includes a tapered portion decreasing in a diameter in a direction toward a lower end of the connection member, and an angle between an inclined surface of the tapered portion and the upper surface of the metal pad is 45° to 80°.Type: ApplicationFiled: July 23, 2020Publication date: October 7, 2021Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Seung Wook PARK, Jae Hyun JUNG, Jae Chang LEE, Dae Hun JEONG, Sang Uk SON, Seong Hun NA
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Publication number: 20210313958Abstract: A bulk-acoustic wave resonator includes a substrate, a first electrode disposed on the substrate, a piezoelectric layer covering at least a portion of the first electrode, and a second electrode covering at least a portion of the piezoelectric layer. When an active region, in which the first electrode and the second electrode are disposed to overlap each other, is viewed from above, among four sides of a rectangle with which at least three vertices of a polygon formed by the active region are in contact, a longest side is defined as a side B and a side connected to side B is defined as a side A, and an aspect ratio (side B/side A) is 1.3 to 3.Type: ApplicationFiled: July 21, 2020Publication date: October 7, 2021Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Tae Kyung LEE, Won HAN, Sang Uk SON, Hwa Sun LEE, Moon Chul LEE
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Publication number: 20210313950Abstract: A bulk-acoustic wave resonator includes: a first electrode disposed above a substrate; a piezoelectric layer disposed to cover at least a portion of the first electrode; and a second electrode disposed to cover at least a portion of the piezoelectric layer. A plurality of steps are formed in any one or any combination of any two or more of the first electrode, the piezoelectric layer, and the second electrode in an active region in which the first electrode, the piezoelectric layer, and the second electrode are all disposed to overlap one another.Type: ApplicationFiled: July 16, 2020Publication date: October 7, 2021Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Won HAN, Tae Yoon KIM, Chang Hyun LIM, Sang Uk SON, Jae Hyoung GIL, Dae Hun JEONG
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Publication number: 20210250014Abstract: A resonance apparatus that processes an electrical loss using a conductive material and a method of manufacturing the resonance apparatus are provided. The resonance apparatus includes a lower electrode formed at a predetermined distance from a substrate, and a piezoelectric layer formed on the lower electrode. The resonance apparatus further includes an upper electrode formed on the piezoelectric layer, and a conductive layer formed on the upper electrode or the lower electrode.Type: ApplicationFiled: April 30, 2021Publication date: August 12, 2021Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hosoo PARK, Duck Hwan KIM, Chul Soo KIM, Sang Uk SON, In Sang SONG, Jeashik SHIN, Moonchul LEE
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Patent number: 11025225Abstract: A resonance apparatus that processes an electrical loss using a conductive material and a method of manufacturing the resonance apparatus are provided. The resonance apparatus includes a lower electrode formed at a predetermined distance from a substrate, and a piezoelectric layer formed on the lower electrode. The resonance apparatus further includes an upper electrode formed on the piezoelectric layer, and a conductive layer formed on the upper electrode or the lower electrode.Type: GrantFiled: May 11, 2020Date of Patent: June 1, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Hosoo Park, Duck Hwan Kim, Chul Soo Kim, Sang Uk Son, In Sang Song, Jeashik Shin, Moonchul Lee
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Patent number: 10991872Abstract: Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include an air cavity disposed on a substrate, a bulk acoustic wave resonant unit including a piezoelectric layer, and a reflective layer to reflect a wave of a resonant frequency that is generated from the piezoelectric layer.Type: GrantFiled: November 30, 2017Date of Patent: April 27, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Jea Shik Shin, Duck Hwan Kim, Chul Soo Kim, Ho Soo Park, Sang Uk Son, In Sang Song, Moon Chul Lee, Cui Jing
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Publication number: 20210036683Abstract: A bulk-acoustic wave resonator includes: a substrate; a lower electrode disposed on the substrate; a piezoelectric layer at least partially covering the lower electrode; and an upper electrode at least partially covering the piezoelectric layer. On a surface of the bulk-acoustic wave resonator, a centroid of an active area in which the lower electrode, the piezoelectric layer, and the upper electrode all overlap each other is aligned with a center of a rectangle defining an aspect ratio of the active area. The active area has a shape of a polygon symmetrical with respect to at least one axis passing through the center of the rectangle defining the aspect ratio. The aspect ratio is greater than or equal to 2 and less than or equal to 10.Type: ApplicationFiled: June 11, 2020Publication date: February 4, 2021Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Won HAN, Sung Wook KIM, Dae Hun JEONG, Sang Uk SON, Sang Heon HAN, Jeong Hoon RYOU
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Patent number: 10897002Abstract: An acoustic resonator includes a resonant portion including a piezoelectric layer disposed between a first electrode and a second electrode, and a frame portion disposed along an outer edge of the second electrode. The frame portion includes three reflective portions reflecting lateral waves generated in the resonant portion.Type: GrantFiled: November 28, 2017Date of Patent: January 19, 2021Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Dae Hun Jeong, Sang Uk Son, Tae Yoon Kim, Dae Ho Kim
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Patent number: 10892737Abstract: A bulk-acoustic wave resonator includes a substrate; a membrane layer forming a cavity with the substrate; a first electrode at least partially disposed on an upper portion of the cavity including an end portion that is thicker than other portions of the first electrode; an insertion layer including a first portion disposed adjacent to from the end portion of the first electrode and a second portion disposed on an upper portion of the first electrode; a piezoelectric layer disposed to cover the insertion layer; and a second electrode disposed on an upper portion of the piezoelectric layer.Type: GrantFiled: April 19, 2019Date of Patent: January 12, 2021Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Won Han, Tae Yoon Kim, Sang Uk Son, Chang Hyun Lim
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Patent number: 10868514Abstract: A resonance apparatus that processes an electrical loss using a conductive material and a method of manufacturing the resonance apparatus are provided. The resonance apparatus includes a lower electrode formed at a predetermined distance from a substrate, and a piezoelectric layer formed on the lower electrode. The resonance apparatus further includes an upper electrode formed on the piezoelectric layer, and a conductive layer formed on the upper electrode or the lower electrode.Type: GrantFiled: November 27, 2017Date of Patent: December 15, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Hosoo Park, Duck Hwan Kim, Chul Soo Kim, Sang Uk Son, In Sang Song, Jeashik Shin, Moonchul Lee
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Patent number: 10812040Abstract: An acoustic wave filter device includes resonance portions, first and second metal pads. The resonance portions each includes a lower electrode disposed on a substrate, a piezoelectric layer disposed on at least a portion of the lower electrode, and an upper electrode disposed on at least a portion of the piezoelectric layer. The first metal pads are connected to one of the upper electrode and the lower electrode of a corresponding resonance portion among the resonance portions. The second metal pads are disposed outwardly of an active region and connected to the other one of the upper electrode and the lower electrode of adjacent resonant portions among the resonance portions. A ring portion is disposed outwardly of the active region in which the lower electrode, the piezoelectric layer, and the upper electrode overlap is disposed only on a portion of any one of the first and second metal pads.Type: GrantFiled: March 18, 2019Date of Patent: October 20, 2020Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Yoon Sok Park, Won Kyu Jeung, Tah Joon Park, Dae Hun Jeong, Sang Uk Son
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Patent number: 10790797Abstract: An acoustic resonator includes: a substrate; a resonance part mounted on the substrate and including resonance part electrodes, the resonance part being configured to generate acoustic waves; a cavity disposed between the resonance part and the substrate; a frame part disposed on at least one electrode among the resonance part electrodes, and being configured to reflect the acoustic waves; and a connection electrode configured to connect the at least one electrode to an external electrode, and having a thickness less than a thickness of the at least one electrode.Type: GrantFiled: September 23, 2016Date of Patent: September 29, 2020Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Won Han, Moon Chul Lee, Jae Chang Lee, Sang Uk Son, Tae Hun Lee
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Publication number: 20200274521Abstract: A resonance apparatus that processes an electrical loss using a conductive material and a method of manufacturing the resonance apparatus are provided. The resonance apparatus includes a lower electrode formed at a predetermined distance from a substrate, and a piezoelectric layer formed on the lower electrode. The resonance apparatus further includes an upper electrode formed on the piezoelectric layer, and a conductive layer formed on the upper electrode or the lower electrode.Type: ApplicationFiled: May 11, 2020Publication date: August 27, 2020Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hosoo PARK, Duck Hwan KIM, Chul Soo KIM, Sang Uk SON, In Sang SONG, Jeashik SHIN, Moonchul LEE
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Publication number: 20200252051Abstract: A bulk-acoustic wave resonator includes a substrate; a membrane layer forming a cavity with the substrate; a first electrode at least partially disposed on an upper portion of the cavity including an end portion that is thicker than other portions of the first electrode; an insertion layer including a first portion disposed adjacent to from the end portion of the first electrode and a second portion disposed on an upper portion of the first electrode; a piezoelectric layer disposed to cover the insertion layer; and a second electrode disposed on an upper portion of the piezoelectric layer.Type: ApplicationFiled: April 19, 2019Publication date: August 6, 2020Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Won HAN, Tae Yoon KIM, Sang Uk SON, Chang Hyun LIM
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Publication number: 20200244249Abstract: Disclosed is a bulk acoustic wave resonator (BAWR). The BAWR includes a bulk acoustic wave resonance unit with a first electrode, a second electrode, and a piezoelectric layer. The piezoelectric layer is disposed between the first electrode and the second electrode. An air edge is formed at a distance from a center of the bulk acoustic wave resonance unit.Type: ApplicationFiled: April 17, 2020Publication date: July 30, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Jea Shik SHIN, Duck Hwan KIM, Chul Soo KIM, Sang Uk SON, In Sang SONG, Moon Chul LEE
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Publication number: 20200195220Abstract: An acoustic resonator includes: a substrate; a resonant portion including a center portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate, and an extension portion disposed along a periphery of the center portion; and a first metal layer disposed outwardly of the resonant portion to be electrically connected to the first electrode. The extension portion includes a lower insertion layer disposed on an upper surface of the first electrode or a lower surface of the first electrode. The piezoelectric layer includes a piezoelectric portion disposed in the center portion, and a bent portion disposed in the extension portion and extended from the piezoelectric portion at an incline according to a shape of the lower insertion layer. The lower insertion layer is formed of a conductive material extending an electrical path between the first electrode and the first metal layer.Type: ApplicationFiled: April 23, 2019Publication date: June 18, 2020Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Won HAN, Chang Hyun LIM, Tae Yoon KIM, Sang Uk SON, Sang Kee YOON
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Patent number: 10686426Abstract: A resonance apparatus that processes an electrical loss using a conductive material and a method of manufacturing the resonance apparatus are provided. The resonance apparatus includes a lower electrode formed at a predetermined distance from a substrate, and a piezoelectric layer formed on the lower electrode. The resonance apparatus further includes an upper electrode formed on the piezoelectric layer, and a conductive layer formed on the upper electrode or the lower electrode.Type: GrantFiled: November 27, 2017Date of Patent: June 16, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Hosoo Park, Duck Hwan Kim, Chul Soo Kim, Sang Uk Son, In Sang Song, Jeashik Shin, Moonchul Lee
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Patent number: 10666224Abstract: Disclosed is a bulk acoustic wave resonator (BAWR). The BAWR includes a bulk acoustic wave resonance unit with a first electrode, a second electrode, and a piezoelectric layer. The piezoelectric layer is disposed between the first electrode and the second electrode. An air edge is formed at a distance from a center of the bulk acoustic wave resonance unit.Type: GrantFiled: April 24, 2017Date of Patent: May 26, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Jea Shik Shin, Duck Hwan Kim, Chul Soo Kim, Sang Uk Son, In Sang Song, Moon Chul Lee
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Publication number: 20200052674Abstract: A bulk-acoustic wave resonator includes: a substrate; a membrane layer forming a cavity with the substrate; a lower electrode disposed on the membrane layer; an insertion layer disposed to cover at least a portion of the lower electrode; a piezoelectric layer disposed on the lower electrode to cover the insertion layer; and an upper electrode at least partially disposed on the piezoelectric layer, wherein the upper electrode includes a reflection groove disposed on the insertion layer.Type: ApplicationFiled: March 25, 2019Publication date: February 13, 2020Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Dae Hun JEONG, Sung Wook KIM, Sang Uk SON, Sang Heon HAN, Won HAN
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Publication number: 20200036358Abstract: An acoustic wave filter device includes resonance portions, first and second metal pads. The resonance portions each includes a lower electrode disposed on a substrate, a piezoelectric layer disposed on at least a portion of the lower electrode, and an upper electrode disposed on at least a portion of the piezoelectric layer. The first metal pads are connected to one of the upper electrode and the lower electrode of a corresponding resonance portion among the resonance portions. The second metal pads are disposed outwardly of an active region and connected to the other one of the upper electrode and the lower electrode of adjacent resonant portions among the resonance portions. A ring portion is disposed outwardly of the active region in which the lower electrode, the piezoelectric layer, and the upper electrode overlap is disposed only on a portion of any one of the first and second metal pads.Type: ApplicationFiled: March 18, 2019Publication date: January 30, 2020Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Yoon Sok PARK, Won Kyu JEUNG, Tah Joon PARK, Dae Hun JEONG, Sang Uk SON