Patents by Inventor Sang-Uk Son

Sang-Uk Son has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9134276
    Abstract: A bulk acoustic wave resonator (BAWR) sensor is provided. The BAWR sensor includes a signal BAWR that measures a resonance frequency that is modified due to a reaction with a target material, a reference BAWR that measures a reference resonance frequency without reaction with an external environment, and a sensing unit that senses the target material, based on the modified resonance frequency and the reference resonance frequency.
    Type: Grant
    Filed: September 14, 2011
    Date of Patent: September 15, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: In Sang Song, Sang Uk Son, Jea Shik Shin, Hyung Rak Kim
  • Publication number: 20150155852
    Abstract: Provided is a filter using bulk acoustic wave resonators (BAWRs), the filter comprising two or more BAWRs connected in series or in parallel to each other, one or more LC elements being connected in series or in parallel to the respective BAWRs, thus constituting a BAWR set.
    Type: Application
    Filed: June 12, 2012
    Publication date: June 4, 2015
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jae Chun Lee, Duck Hwan Kim, Chul Soo Kim, Ho Soo Park, Sang Uk Son, In Sang Song, Jea Shik Shin, Moon Chul Lee, Jing Cui
  • Patent number: 8987666
    Abstract: A temperature sensing apparatus and method are described to detect a change in a frequency due to a change in a temperature. An infrared light sensing apparatus and method are also provided. The temperature sensing apparatus may include an electrode to generate an electrical signal, a piezoelectric layer to convert the electrical signal into an acoustic wave, and a temperature sensitive layer formed by doping impurities in one or more structures formed on a substrate. Additionally, the infrared light sensing apparatus may convert into heat infrared light incident to an infrared light absorption layer, using an infrared light reflection layer and the infrared light absorption layer. A temperature sensitive layer may detect a change in a resonant frequency based on a change in a temperature of the heat, and may detect a change in infrared light based on the change in the resonant frequency.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: March 24, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ho Soo Park, In Sang Song, Duck Hwan Kim, Chul Soo Kim, Sang Uk Son, Jea Shik Shin, Cui Jing
  • Patent number: 8896396
    Abstract: Provided are low pass filters using a bulk acoustic wave resonator (BAWR). A low pass filter may include an input terminal configured to be connected with a first radio frequency (RF) device, an output terminal configured to be connected with a second RF device, a parallel segment including a first BAWR, a third BAWR, and a fifth BAWR that may be connected in parallel with each other to a reference potential, a first series segment having a second BAWR and a first inductor, and a second series segment having a fourth BAWR and a second inductor, and connected in series with the first series segment.
    Type: Grant
    Filed: November 30, 2011
    Date of Patent: November 25, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chul Soo Kim, Jun Chul Kim, In Sang Song, Young Il Kim, Duck Hwan Kim, Sang Uk Son, Jea Shik Shin, Hyung Rak Kim
  • Publication number: 20140339959
    Abstract: A thin film bulk acoustic resonator and a method of manufacturing the same is disclosed. The thin film bulk acoustic resonator includes an acoustic resonator including a first electrode, a second electrode, and a piezoelectric layer disposed between the first electrode and the second electrode; an air gap disposed below the acoustic resonator and above a substrate to reflect the acoustic wave; and an anchor disposed on each of both surfaces of the air gap and having the same thickness as the air gap.
    Type: Application
    Filed: June 7, 2012
    Publication date: November 20, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Moon Chul Lee, In Sang Song, Duck Hwan Kim, Chul Soo Kim, Sang Uk Son, Jea Shik Shin, Ho Soo Park, Jing Cui
  • Publication number: 20140203686
    Abstract: Provided are a resonator and a method of fabricating the same. The resonator may include a first electrode disposed on a substrate, a piezoelectric layer disposed on the first electrode, a second electrode disposed on the piezoelectric layer, and a control layer disposed on the second electrode and having a frame with an uneven surface.
    Type: Application
    Filed: November 6, 2013
    Publication date: July 24, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: In Sang Song, Ho Soo Park, Duck Hwan Kim, Chul Soo Kim, Sang Uk Son, Jae Shik Shin, Moon Chul Lee
  • Publication number: 20140191825
    Abstract: A radio frequency filter and a manufacturing method thereof are provided. A radio frequency filter includes bulk acoustic wave resonators (BAWRs), the BAWRs including first BAWRs connected in series, second BAWRs connected in parallel, or a combination thereof.
    Type: Application
    Filed: November 12, 2013
    Publication date: July 10, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang Uk SON, Ho Soo PARK, Jea Shik SHIN, Duck Hwan KIM, Chul Soo KIM, In Sang SONG, Moon Chul LEE
  • Publication number: 20140110763
    Abstract: A nano resonance apparatus includes a gate electrode configured to generate a magnetic field, and a nanowire connecting a source electrode to a drain electrode and configured to vibrate in the presence of the magnetic field. The nanowire includes a protruding portion extending in a direction of the gate electrode.
    Type: Application
    Filed: October 18, 2013
    Publication date: April 24, 2014
    Applicants: Korea University Industrial & Academic Collaboration Foundation, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: In Sang Song, Ho Soo Park, Duck Hwan Kim, Sang Uk Son, Jae Shik Shin, Jae-Sung Rieh, Byeong Kwon Ju, Dong Hoon Hwang
  • Publication number: 20140070671
    Abstract: A resonance apparatus that processes an electrical loss using a conductive material and a method of manufacturing the resonance apparatus are provided. The resonance apparatus includes a lower electrode formed at a predetermined distance from a substrate, and a piezoelectric layer formed on the lower electrode. The resonance apparatus further includes an upper electrode formed on the piezoelectric layer, and a conductive layer formed on the upper electrode or the lower electrode.
    Type: Application
    Filed: July 3, 2013
    Publication date: March 13, 2014
    Inventors: Hosoo PARK, Duck Hwan KIM, Chul Soo KIM, Sang Uk SON, In Sang SONG, Jeashik SHIN, Moonchul LEE
  • Patent number: 8648671
    Abstract: A Bulk Acoustic Wave Resonator (BAWR), a method of manufacturing of the BAWR, and duplexer including the BAWR are provided. The BAWR may include a first substrate including a via hole formed in a predetermined area of a bottom surface of the first substrate. A first air cavity may be formed above the first substrate, and a first lamination resonating portion may be laminated above the first air cavity in sequence of a lower electrode, a piezoelectric layer, and an upper electrode. A second air cavity may be formed above the first substrate, and a second lamination resonating portion may be laminated above the second air cavity in sequence of the lower electrode, the piezoelectric layer, and the upper electrode. The first lamination resonating portion and the second lamination resonating portion may be connected via either the lower electrode or the upper electrode.
    Type: Grant
    Filed: April 18, 2011
    Date of Patent: February 11, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang Uk Son, In Sang Song, Young Il Kim, Duck Hwan Kim, Chul Soo Kim, Jea Shik Shin, Hyung Rak Kim, Jae Chun Lee
  • Publication number: 20130302843
    Abstract: A method of measuring biological sample properties and a biological sample property measuring apparatus is provided. A method of measuring biological sample properties includes disposing a biomaterial to contact a sensing unit, detecting a radio frequency (RF) signal flowing through the sensing unit, and obtaining an RF property indicator of the biomaterial based on the detected RF signal.
    Type: Application
    Filed: February 6, 2013
    Publication date: November 14, 2013
    Applicants: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang Uk SON, Duck Hwan KIM, In Sang SONG, Seong Chan JUN, Ho Soo PARK, Jea Shik SHIN, Moon Chul LEE
  • Patent number: 8579411
    Abstract: A nozzle and an electrostatic field induction ink-jet nozzle are disclosed. In accordance with an embodiment of the present invention, the nozzle includes a concave part, which is formed along an outer circumference of the nozzle and in which the outer circumference is adjacent to a liquid discharging surface. The discharging nozzle can minimize the overflow and damping by a liquid during a process of discharging the liquid and thus maintain the discharging performance constant despite an extended operation of the nozzle.
    Type: Grant
    Filed: February 26, 2010
    Date of Patent: November 12, 2013
    Assignee: Sungkyunkwan University Foundation For Corporate Collaboration
    Inventors: Yong Jae Kim, Sukhan Lee, Hanseo Ko, Sang Uk Son, Soo Hong Lee, Ki Chul An, Jaeyong Choi
  • Publication number: 20130181579
    Abstract: Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include an air cavity disposed on a substrate, a bulk acoustic wave resonant unit including a piezoelectric layer, and a reflective layer to reflect a wave of a resonant frequency that is generated from the piezoelectric layer.
    Type: Application
    Filed: November 27, 2012
    Publication date: July 18, 2013
    Inventors: Jea Shik Shin, Duck Hwan Kim, Chul Soo Kim, Ho Soo Park, Sang Uk Son, In Sang Song, Moon Chul Lee, Cui Jing
  • Publication number: 20130147320
    Abstract: Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include a first electrode, a piezoelectric layer disposed on the first electrode, a second electrode disposed on the piezoelectric layer. In various aspects, at least one of the first electrode, the piezoelectric layer, and the second electrode are formed of a carbon-based material.
    Type: Application
    Filed: August 23, 2012
    Publication date: June 13, 2013
    Inventors: Sang Uk Son, Duck Hwan KIM, Chul Soo KIM, Ho Soo Park, In Sang Song, Jea Shik Shin, Moon Chul Lee, Jing Cui
  • Publication number: 20130140959
    Abstract: Disclosed is a bulk acoustic wave resonator (BAWR). The BAWR includes a bulk acoustic wave resonance unit with a first electrode, a second electrode, and a piezoelectric layer. The piezoelectric layer is disposed between the first electrode and the second electrode. An air edge is formed at a distance from a center of the bulk acoustic wave resonance unit.
    Type: Application
    Filed: November 30, 2012
    Publication date: June 6, 2013
    Inventors: Jea Shik SHIN, Duck Hwan KIM, Chul Soo KIM, Sang Uk SON, In Sang SONG, Moon Chul LEE
  • Publication number: 20130099122
    Abstract: A temperature sensing apparatus and method are described to detect a change in a frequency due to a change in a temperature. An infrared light sensing apparatus and method are also provided. The temperature sensing apparatus may include an electrode to generate an electrical signal, a piezoelectric layer to convert the electrical signal into an acoustic wave, and a temperature sensitive layer formed by doping impurities in one or more structures formed on a substrate. Additionally, the infrared light sensing apparatus may convert into heat infrared light incident to an infrared light absorption layer, using an infrared light reflection layer and the infrared light absorption layer. A temperature sensitive layer may detect a change in a resonant frequency based on a change in a temperature of the heat, and may detect a change in infrared light based on the change in the resonant frequency.
    Type: Application
    Filed: September 14, 2012
    Publication date: April 25, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ho Soo PARK, In Sang SONG, Duck Hwan KIM, Chul Soo KIM, Sang Uk SON, Jea Shik SHIN, Cui Jing
  • Publication number: 20130033340
    Abstract: Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include a bulk acoustic wave resonance unit and an anti-resonant frequency modifying unit to modify an anti-resonant frequency generated from the bulk acoustic wave resonance unit.
    Type: Application
    Filed: March 27, 2012
    Publication date: February 7, 2013
    Inventors: Chul Soo Kim, Dal Ahn, Jae Shik Shin, In Sang Song, Duck Hwan Kim, Sang Uk Son, Ho Soo Park
  • Publication number: 20130027153
    Abstract: A bulk acoustic wave resonator (BAWR) includes a bulk acoustic resonance unit and at least one compensation layer. The bulk acoustic resonance unit includes a first electrode, a second electrode, and a piezoelectric layer disposed between the first electrode and the second electrode. The first electrode, the second electrode, and the piezoelectric layer each include a material that modifies a resonance frequency based on a temperature, and the at least one compensation layer includes a material that adjusts the resonance frequency modified based on the temperature in a direction opposite to a direction of the modification.
    Type: Application
    Filed: July 26, 2012
    Publication date: January 31, 2013
    Applicant: Samsung Electronics Co., Ltd.,
    Inventors: Jea Shik Shin, In Sang Song, Young Il Kim, Duck Hwan Kim, Chul Soo Kim, Sang Uk Son, Hyung Rak Kim, Jae Chun Lee
  • Publication number: 20120139664
    Abstract: Provided are low pass filters using a bulk acoustic wave resonator (BAWR). A low pass filter may include an input terminal configured to be connected with a first radio frequency (RF) device, an output terminal configured to be connected with a second RF device, a parallel segment including a first BAWR, a third BAWR, and a fifth BAWR that may be connected in parallel with each other to a reference potential, a first series segment having a second BAWR and a first inductor, and a second series segment having a fourth BAWR and a second inductor, and connected in series with the first series segment.
    Type: Application
    Filed: November 30, 2011
    Publication date: June 7, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Chul Soo KIM, Jun Chul KIM, In Sang SONG, Young Il KIM, Duck Hwan KIM, Sang Uk SON, Jea Shik SHIN, Hyung Rak KIM
  • Patent number: 8186808
    Abstract: The present invention relates to a droplet jetting apparatus using electrostatic force, a manufacturing method thereof and an ink providing method thereof. The droplet jetting apparatus using electrostatic force includes a lower electrode unit in which a nozzle and a lower electrode positioned in the nozzle equipped in the upper part of a first substrate, and an ink inflow channel equipped in the lower part of the first substrate are integrally formed; an upper electrode unit having an upper electrode formed on the top surface of a second substrate and an ink discharge hole formed by being penetrated to the upper electrode from the bottom surface of the second substrate; and a bonding layer for bonding the lower electrode unit and the upper electrode unit with each other so that the nozzle is vertically aligned with the ink discharge hole.
    Type: Grant
    Filed: February 15, 2008
    Date of Patent: May 29, 2012
    Assignee: Sungkyunkwan University Foundation for Corporate Collaboration
    Inventors: Sukhan Lee, Young Min Kim, Sang Uk Son, Jae Yong Choi, Do Young Byun