Abstract: An anode for a secondary battery includes an anode current collector, and an anode active material layer including a first anode active material layer and a second anode active material layer sequentially stacked from a surface of the anode current collector. Each of the first anode active material layer and the second anode active material layer includes a carbon-based active material and a silicon-based active material as an anode active material, and a carbon nanotube as a conductive material. A content of the silicon-based active material in the second anode active material layer is greater than a content of the silicon-based active material in the first anode active material layer. A Raman R value of the carbon nanotube included in the second anode active material layer is smaller than a Raman R value of the carbon nanotube included in the first anode active material layer.

Abstract: Provided is a positive electrode for a lithium secondary battery including: a current collector; and a positive electrode active material layer including a positive electrode active material and carbon nanotubes, placed on the current collector, wherein the carbon nanotubes have ID/IG of 0.10 or less, the ID/IG being a ratio of a peak intensity of a D band divided by a peak intensity of a G band in a Raman spectrum.

Abstract: Etching compositions are provided. The etching compositions can be used for etching cobalt. The etching compositions may include a chelator, water, an oxidizer, and an organic solvent, and the chelator may include an organic acid, an amine compound and/or a polyhydric alcohol. Water may be present in an amount of 1 wt % to 10 wt % based on a total weight of the etching composition.

Abstract: The present invention provides an anode for a secondary battery, which includes an anode current collector and an anode active material layer which is formed on the anode current collector, and includes a silicon-based active material and a conductive material including single-walled carbon nanotubes. The single-walled carbon nanotube has a Raman R value (a D band peak intensity (Id)/a G band peak intensity (Ig)) of 0.01 to 0.1.

Abstract: A lithium secondary battery includes an anode including an anode current collector and an anode active material layer formed thereon, the anode active material layer including an acryl-based binder, a cathode facing the anode, an anode tab electrically connected to the anode, and a cathode tab electrically connected to the cathode. A content of the acryl-based binder and a distance between the cathode tab and the anode tab satisfies a predetermined relation to provide the lithium secondary battery having improved mechanical stability and battery performance.

Abstract: Embodiments of the present invention provide a lithium secondary battery including anode active material layers which have a multi-layered structure and include carbon-based active materials having different contents from each other, thereby improving mechanical stability and battery performance.

Abstract: A lithium secondary battery includes a cathode, a separator, and an anode including an anode current collector and an anode active material layer formed on the anode current collector and facing the cathode with the separator interposed therebetween. The anode active material layer includes a first anode active material layer formed on the anode current collector and including a first anode active material and a first anode binder containing a styrene-butadiene-based rubber (SBR) binder and a second anode active material layer formed on the first anode active material layer and including a second anode active material and a second anode binder containing a acryl-based binder. Each of the first anode active material and the second anode active material includes a silicon-based active material and a graphite-based material and contains 2 to 9.5 parts by weight of silicon with respect to the 100 part by weight of the graphite-based active material.

Abstract: An etching composition selectively removes a titanium nitride film from a stacked conductive film structure including a titanium nitride (TiN) film and a tantalum nitride (TaN) film. The etching composition configured to etch titanium nitride (TiN) includes 5 wt % to 30 wt % of hydrogen peroxide, 15 wt % to 50 wt % of acid compound, and 0.001 wt % to 5 wt % of corrosion inhibitor, with respect to a total weight of the etching composition, wherein the acid compound includes at least one of phosphoric acid (H3PO4), nitric acid (HNO3), hydrochloric acid (HCl), hydroiodic acid (HI), hydrobromic acid (HBr), perchloric acid (HClO4), silicic acid (H2SiO3), boric acid (H3BO3), acetic acid (CH3COOH), propionic acid (C2H5COOH), lactic acid (CH3CH(OH)COOH), and glycolic acid (HOCH2COOH).

Abstract: A chemical mechanical polishing (CMP) apparatus includes a polishing pad on a polishing platen, a polishing head on the polishing pad, the polishing head having a membrane to hold a wafer on the polishing pad, and a polishing slurry feeding line to feed a polishing slurry, and a retainer ring around the membrane and in contact with the polishing pad to prevent detachment of the wafer, the retainer ring including a polishing slurry feeding inlet connected to the polishing slurry feeding line to feed the polishing slurry onto the polishing pad.

Abstract: An etching composition selectively removes a titanium nitride film from a stacked conductive film structure including a titanium nitride (TiN) film and a tantalum nitride (TaN) film. The etching composition configured to etch titanium nitride (TiN) includes 5 wt % to 30 wt % of hydrogen peroxide, 15 wt % to 50 wt % of acid compound, and 0.001 wt % to 5 wt % of corrosion inhibitor, with respect to a total weight of the etching composition, wherein the acid compound includes at least one of phosphoric acid (H3PO4), nitric acid (HNO3), hydrochloric acid (HCl), hydroiodic acid (HI), hydrobromic acid (HBr), perchloric acid (HClO4), silicic acid (H2SiO3), boric acid (H3BO3), acetic acid (CH3COOH), propionic acid (C2H5COOH), lactic acid (CH3CH(OH)COOH), and glycolic acid (HOCH2COOH).

Abstract: An etching composition selectively removes a titanium nitride film from a stacked conductive film structure including a titanium nitride (TiN) film and a tantalum nitride (TaN) film. The etching composition configured to etch titanium nitride (TiN) includes 5 wt % to 30 wt % of hydrogen peroxide, 15 wt % to 50 wt % of acid compound, and 0.001 wt % to 5 wt % of corrosion inhibitor, with respect to a total weight of the etching composition, wherein the acid compound includes at least one of phosphoric acid (H3PO4), nitric acid (HNO3), hydrochloric acid (HCl), hydroiodic acid (HI), hydrobromic acid (HBr), perchloric acid (HNO4), silicic acid (H2SiO3), boric acid (H3BO3), acetic acid (CH3COOH), propionic acid (C2H5COOH), lactic acid (CH3CH(OH)COOH), and glycolic acid (HOCH2COOH).

Abstract: A chemical liquid supply apparatus includes a nozzle unit including a nozzle arm and an injection nozzle mounted in an end of the nozzle arm, a chemical liquid supply unit including a first chemical liquid tank accommodating a first chemical liquid and a second chemical liquid tank accommodating a second chemical liquid, and supplying the first chemical liquid and the second chemical liquid to the nozzle unit, and a mixer unit provided in the nozzle unit and discharging a process fluid by mixing the first chemical liquid and the second chemical liquid, wherein the mixer unit includes an in-line mixer mixing the first chemical liquid and the second chemical liquid that are continually injected from the chemical liquid supply unit, and a mixer pipe extending from the in-line mixer to the injection nozzle.

Abstract: A composition for etching may include phosphoric acid, an ammonium-based compound, at least one of hydrochloric acid or a polyphosphate-based compound, and a silicon-containing compound.

Abstract: An etching composition selectively removes a titanium nitride film from a stacked conductive film structure including a titanium nitride (TiN) film and a tantalum nitride (TaN) film. The etching composition configured to etch titanium nitride (TiN) includes 5 wt % to 30 wt % of hydrogen peroxide, 15 wt % to 50 wt % of acid compound, and 0.001 wt % to 5 wt % of corrosion inhibitor, with respect to a total weight of the etching composition, wherein the acid compound includes at least one of phosphoric acid (H3PO4), nitric acid (HNO3), hydrochloric acid (HCl), hydroiodic acid (HI), hydrobromic acid (HBr), perchloric acid (HNO4), silicic acid (H2SiO3), boric acid (H3BO3), acetic acid (CH3COOH), propionic acid (C2H5COOH), lactic acid (CH3CH(OH)COOH), and glycolic acid (HOCH2COOH).

Abstract: An electrode assembly is provided. The electrode assembly has a plurality of electrode plates having one or both sides of each of the electrode plates that are coated with an electrode active material and are stacked with a separator interposed between the respective electrode plates. The separator includes a surplus outer periphery of a size greater than the outer periphery of an electrode plate, an electrode tab which extends from the outer periphery of the electrode plate and protrudes outwardly beyond the outer periphery of the separator is formed on each electrode plate, and at least some of the separators forming the electrode assembly have an insulation-enhancing part for suppressing heat shrinkage of a separator formed in the surplus outer peripheries thereof which are adjacent to the respective electrode tabs.

Abstract: The present disclosure relates to an etchant, a method of making an etchant, an etching method and a method of fabricating a semiconductor device using the same. The etching method includes supplying an etchant on an etch-target layer to etch the etch-target layer in a wet etch manner. The etchant contains a basic compound and a sugar alcohol, and the basic compound contains ammonium hydroxide or tetraalkyl ammonium hydroxide. In the etchant, the sugar alcohol has 0.1 to 10 parts by weight for every 100 parts by weight of the basic compound.

Abstract: An etching composition includes about 1 wt % to about 7 wt % of hydrogen peroxide, about 20 wt % to about 80 wt % of phosphoric acid, about 0.001 wt % to about 1 wt % of an amine or amide polymer, 0 wt % to about 55 wt % of sulfuric acid, and about 10 wt % to about 45 wt % of deionized water.

Abstract: The present disclosure relates to an etchant, a method of making an etchant, an etching method and a method of fabricating a semiconductor device using the same. The etching method includes supplying an etchant on an etch-target layer to etch the etch-target layer in a wet etch manner. The etchant contains a basic compound and a sugar alcohol, and the basic compound contains ammonium hydroxide or tetraalkyl ammonium hydroxide. In the etchant, the sugar alcohol has 0.1 to 10 parts by weight for every 100 parts by weight of the basic compound.

Abstract: A chemical liquid supply apparatus includes a nozzle unit including a nozzle arm and an injection nozzle mounted in an end of the nozzle arm, a chemical liquid supply unit including a first chemical liquid tank accommodating a first chemical liquid and a second chemical liquid tank accommodating a second chemical liquid, and supplying the first chemical liquid and the second chemical liquid to the nozzle unit, and a mixer unit provided in the nozzle unit and discharging a process fluid by mixing the first chemical liquid and the second chemical liquid, wherein the mixer unit includes an in-line mixer mixing the first chemical liquid and the second chemical liquid that are continually injected from the chemical liquid supply unit, and a mixer pipe extending from the in-line mixer to the injection nozzle.

Abstract: Disclosed is a substrate processing system including a nozzle to supply a chemical solution containing a mixture of first and second solutions onto a substrate loaded on a supporter of a process chamber, a chemical solution supplying system to supply the chemical solution to the nozzle, and a controller to control the chemical solution supplying system. The chemical solution supplying system may include a mixing tank mixing a plurality of chemicals to produce the first solution, a supply tank receiving the first solution from the mixing tank and producing the chemical solution, a connection line to connect the mixing tank to the supply tank, and a valve and a pump on the connection line. The pump is controlled to allow the first solution to be supplied into the supply tank at a predetermined supply amount per stroke.