Patents by Inventor Sang-Won Kang

Sang-Won Kang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110210425
    Abstract: Methods of epitaxy of gallium nitride, and other such related films, and light emitting diodes on patterned sapphire substrates, and other such related substrates, are described.
    Type: Application
    Filed: February 28, 2011
    Publication date: September 1, 2011
    Inventors: Jie Su, Tuoh-Bin Ng, Olga Kryliouk, Sang Won Kang, Jie Cui
  • Publication number: 20110117728
    Abstract: A method and apparatus for removing deposition products from internal surfaces of a processing chamber, and for preventing or slowing growth of such deposition products. A halogen containing gas is provided to the chamber to etch away deposition products. A halogen scavenging gas is provided to the chamber to remove any residual halogen. The halogen scavenging gas is generally activated by exposure to electromagnetic energy, either inside the processing chamber by thermal energy, or in a remote chamber by electric field, UV, or microwave. A deposition precursor may be added to the halogen scavenging gas to form a deposition resistant film on the internal surfaces of the chamber. Additionally, or alternately, a deposition resistant film may be formed by sputtering a deposition resistant metal onto internal components of the processing chamber in a PVD process.
    Type: Application
    Filed: August 26, 2010
    Publication date: May 19, 2011
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Jie Su, Lori D. Washington, Sandeep Nijhawan, Olga Kryliouk, Jacob Grayson, Sang Won Kang, Dong Hyung Lee, Hua Chung
  • Patent number: 7902544
    Abstract: The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.
    Type: Grant
    Filed: May 26, 2010
    Date of Patent: March 8, 2011
    Assignee: Samsung LED Co., Ltd
    Inventors: Sun Woon Kim, Je Won Kim, Sang Won Kang, Keun Man Song, Bang Won Oh
  • Patent number: 7888670
    Abstract: There is provided a nitride semiconductor light emitting device including: an n-type semiconductor region; an active layer formed on the n-type semiconductor region; a p-type semiconductor region formed on the active layer; an n-electrode disposed in contact with the n-type semiconductor region; a p-electrode formed on the p-type semiconductor region; and at least one intermediate layer formed in at least one of the n-type semiconductor region and the p-type semiconductor region, the intermediate layer disposed above the n-electrode, wherein the intermediate layer is formed of a multi-layer structure where at least three layers with different band gaps from one another are deposited, wherein the multi-layer structure includes one of an AlGaN layer/GaN layer/InGaN layer stack and an InGaN layer/GaN layer/AlGaN layer stack.
    Type: Grant
    Filed: April 14, 2008
    Date of Patent: February 15, 2011
    Assignee: Samsung LED Co., Ltd.
    Inventors: Sang Heon Han, Sang Won Kang, Jeong Tak Oh, Seung Beom Seo, Dong Joon Kim, Hyun Wook Shim
  • Patent number: 7829882
    Abstract: The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.
    Type: Grant
    Filed: October 17, 2006
    Date of Patent: November 9, 2010
    Assignee: Samsung LED Co., Ltd.
    Inventors: Sun Woon Kim, Je Won Kim, Sang Won Kang, Keun Man Song, Bang Won Oh
  • Publication number: 20100230657
    Abstract: The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.
    Type: Application
    Filed: May 26, 2010
    Publication date: September 16, 2010
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Sun Woon KIM, Je Won Kim, Sang Won Kang, Keun Man Song, Bang Won Oh
  • Patent number: 7794708
    Abstract: Disclosed herein is a pharmaceutical composition for the prophylaxis and treatment of restenosis, comprising a peroxiredoxin 2 (Prx II) protein as an active ingredient. Optionally, the composition may contain other active ingredients suppressive of restenosis at the carotid artery, the coronary artery, the peripheral artery, and the renal artery. Also, a composition and a method are provided for screening therapeutics for restenosis. This screening composition comprises a peroxiredoxin 2 gene or protein. Together with the method, the composition is useful for searching and developing therapeutics for restenosis.
    Type: Grant
    Filed: August 1, 2007
    Date of Patent: September 14, 2010
    Assignee: EWHA University-Industry Collaboration Foundation
    Inventors: Sang-Won Kang, Min-Hee Choi
  • Publication number: 20100226905
    Abstract: Disclosed herein is a pharmaceutical composition for the prophylaxis and treatment of restenosis, comprising a peroxiredoxin 2 (Prx II) protein as an active ingredient. Optionally, the composition may contain other active ingredients suppressive of restenosis at the carotid artery, the coronary artery, the peripheral artery, and the renal artery. Also, a composition and a method are provided for screening therapeutics for restenosis. This screening composition comprises a peroxiredoxin 2 gene or protein. Together with the method, the composition is useful for searching and developing therapeutics for restenosis.
    Type: Application
    Filed: August 1, 2007
    Publication date: September 9, 2010
    Inventors: Sang-Won KANG, Min-Hee Choi
  • Patent number: 7731337
    Abstract: The present invention is directed to a heating resistor including a conducting oxide having an electric conductivity and a nonconducting oxide having insulation or nonconductivity, liquid ejecting heads and apparatus comprising the heating resistors.
    Type: Grant
    Filed: January 23, 2007
    Date of Patent: June 8, 2010
    Assignee: Korea Advanced Institute of Science and Technology
    Inventors: Sang-Won Kang, Se-Hun Kwon
  • Patent number: 7705364
    Abstract: A nitride semiconductor light emitting device has high internal quantum efficiency but low operating voltage. The nitride semiconductor light emitting device includes an n-nitride semiconductor layer; an active layer of multi-quantum well structure formed on the n-nitride semiconductor layer, and having a plurality of quantum well layers and a plurality of quantum barrier layers; and a p-nitride semiconductor layer formed on the active layer. One of the quantum well layers adjacent to the n-nitride semiconductor layer has an energy band gap greater than that of another one of the quantum well layers adjacent to the p-nitride semiconductor layer.
    Type: Grant
    Filed: October 23, 2006
    Date of Patent: April 27, 2010
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Dong Yul Lee, Sang Won Kang, Keun Man Song, Je Won Kim, Sang Su Hong
  • Patent number: 7702504
    Abstract: A coding apparatus including a base layer, a speech quality enhancement layer, and a multiplexer. The base layer filters an input speech signal using linear prediction coding and generates an excitation signal corresponding to the filtered speech signal through a fixed codebook search and an adaptive codebook search. The speech quality enhancement layer searches a fixed codebook using parameters obtained through the fixed codebook search in the base layer, or searches the fixed codebook using a target signal, which is obtained by removing a contribution of a fixed codebook of the base layer and a signal which is obtained by synthesizing and filtering a previous fixed codebook of the speech quality enhancement layer from a target signal for the fixed codebook search of the base layer. The multiplexer multiplexes signals generated by the base layer and the at least one speech quality enhancement layer.
    Type: Grant
    Filed: July 9, 2004
    Date of Patent: April 20, 2010
    Assignee: Samsung Electronics Co., Ltd
    Inventors: Chang-yong Son, Kang-eun Lee, Sang-won Kang, Sang-hyun Chi
  • Publication number: 20100019223
    Abstract: There is provided a nitride semiconductor light emitting device including an active layer of a multi quantum well structure, the nitride semiconductor light emitting device including: a substrate; and a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially stacked on the substrate, wherein the active layer is formed of a multi quantum well structure where a plurality of barrier layers and a plurality of well layers are arranged alternately with each other, and at least one of the plurality of barrier layers includes a first barrier layer including a p-doped barrier layer doped with a p-dopant and an undoped barrier layer.
    Type: Application
    Filed: December 18, 2008
    Publication date: January 28, 2010
    Applicants: SAMSUNG ELECTRO-MECHANICS CO., LTD., GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Sang Won Kang, Seong Ju Park, Min Ki Kwon, Sang Jun Lee, Joo Young Cho, Yong Chun Kim, Sang Heon Han, Dong Ju Lee, Jeong Tak Oh, Je Won Kim
  • Publication number: 20100019258
    Abstract: There is provided a semiconductor light emitting device that can easily dissipate heat, improve current spreading efficiency, and reduce defects by blocking dislocations occurring when a semiconductor layer is grown to thereby increase reliability. A semiconductor light emitting device including a substrate, a light emitting structure having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer sequentially laminated, and an n-type electrode and a p-type electrode formed on the n-type semiconductor layer and the p-type semiconductor layer, respectively, according to an aspect of the invention may include: a metal layer formed in the n-type semiconductor layer and contacting the n-type electrode.
    Type: Application
    Filed: December 18, 2008
    Publication date: January 28, 2010
    Applicants: SAMSUNG ELECTRO-MECHANICS CO., LTD., GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Sang Won KANG, Seong Ju Park, Joo Young Cho, Il Kyu Park, Yong Chun Kim, Dong Joon Kim, Jeong Tak Oh, Je Won Kim
  • Patent number: 7630890
    Abstract: A block-constrained Trellis coded quantization (TCQ) method and a method and apparatus for quantizing line spectral frequency (LSF) parameters employing the same in a speech coding system wherein the LSF coefficient quantizing method includes: removing the direct current (DC) component in an input LSF coefficient vector; generating a first prediction error vector by performing inter-frame and intra-frame prediction for the LSF coefficient vector, in which the DC component is removed, quantizing the first prediction error vector by using the BC-TCQ algorithm, and by performing intra-frame and inter-frame prediction compensation, generating a quantized first LSF coefficient vector; generating a second prediction error vector by performing intra-frame prediction for the LSF coefficient vector, in which the DC component is removed, quantizing the second prediction error vector by using the BC-TCQ algorithm, and then, by performing intra-frame prediction compensation, generating a quantized second LSF coefficient
    Type: Grant
    Filed: February 19, 2004
    Date of Patent: December 8, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chang-yong Son, Sang-won Kang, Yong-won Shin, Thomas R. Fischer
  • Publication number: 20090166669
    Abstract: A nitride semiconductor light emitting device and a method of manufacturing the same, which can prevent crystal defects such as dislocation while ensuring uniform current spreading into an active layer. The nitride semiconductor light emitting device includes a first n-nitride semiconductor layer formed on a substrate, a first intermediate pattern layer formed on the first n-nitride semiconductor layer, the first intermediate pattern layer having a nanoscale dot structure made of Si compound, a second n-nitride semiconductor layer formed on the first n-nitride semiconductor layer, a second intermediate pattern layer formed on the second n-nitride semiconductor layer, the second intermediate pattern layer having a nanoscale dot structure made of Si compound, which is electrically insulating, a third n-nitride semiconductor layer formed on the second n-nitride semiconductor layer, an active layer formed on the third n-nitride semiconductor layer, and a p-nitride semiconductor layer formed on the active layer.
    Type: Application
    Filed: October 15, 2008
    Publication date: July 2, 2009
    Inventors: Je Won Kim, Yong Chun Kim, Sang Won Kang, Seok Min Hwang, Seung Wan Chae
  • Publication number: 20090014713
    Abstract: The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.
    Type: Application
    Filed: July 11, 2008
    Publication date: January 15, 2009
    Inventors: Sang Won KANG, Yong Chun Kim, Dong Hyun Cho, Jeong Tak Oh, Dong Joon Kim
  • Publication number: 20080251781
    Abstract: There is provided a nitride semiconductor light emitting device including: an n-type semiconductor region; an active layer formed on the n-type semiconductor region; a p-type semiconductor region formed on the active layer; an n-electrode disposed in contact with the n-type semiconductor region; a p-electrode formed on the p-type semiconductor region; and at least one intermediate layer formed in at least one of the n-type semiconductor region and the p-type semiconductor region, the intermediate layer disposed above the n-electrode, wherein the intermediate layer is formed of a multi-layer structure where at least three layers with different band gaps from one another are deposited, wherein the multi-layer structure includes one of an AlGaN layer/GaN layer/InGaN layer stack and an InGaN layer/GaN layer/AlGaN layer stack.
    Type: Application
    Filed: April 14, 2008
    Publication date: October 16, 2008
    Inventors: Sang Heon Han, Sang Won Kang, Jeong Tak Oh, Seung Beom Seo, Dong Joon Kim, Hyun Wook Shim
  • Publication number: 20080158303
    Abstract: The present invention is directed to a heating resistor comprising a conducting oxide having an electric conductivity and a nonconducting oxide having insulation or nonconductivity, liquid ejecting heads and apparatus comprising the heating resistors.
    Type: Application
    Filed: January 23, 2007
    Publication date: July 3, 2008
    Inventors: Sang-Won Kang, Se-Hun Kwon
  • Patent number: 7389227
    Abstract: A high-speed search method in a speech encoder using an order character of LSP (Line Spectrum Pair) parameters in an LSP parameter quantizer using SVQ (Split Vector Quantization) used in a low-speed transmission speech encoder, includes the steps of rearranging a codebook according to an element value of a reference row for determining a range of code vectors to be searched; and determining a search range by using an order character between a given target vector and an arranged code vector to obtain an optimal code vector. The method gives effects of reducing computational complexity required to search the codebook without signal distortion in quantizing the LSP parameters of the speech encoder using SVQ, and reducing computational complexity without loss of tone quality in G.729 fixed codebook search by performing candidate selection and search on the basis of the correlation value size of the pulse position index.
    Type: Grant
    Filed: December 28, 2000
    Date of Patent: June 17, 2008
    Assignee: C & S Technology Co., Ltd.
    Inventors: Sang Won Kang, Chang Yong Son, Won Il Lee, Yoo Na Sung, Min Kyu Shim, Seong Hoon Hong
  • Publication number: 20070292406
    Abstract: Disclosed herein is a pharmaceutical composition for the prophylaxis and treatment of restenosis, comprising a peroxiredoxin 2 (Prx II) protein as an active ingredient. Optionally, the composition may contain other active ingredients suppressive of restenosis at the carotid artery, the coronary artery, the peripheral artery, and the renal artery. Also, a composition and a method are provided for screening therapeutics for restenosis. This screening composition comprises a peroxiredoxin 2 gene or protein. Together with the method, the composition is useful for searching and developing therapeutics for restenosis.
    Type: Application
    Filed: August 1, 2007
    Publication date: December 20, 2007
    Inventors: Sang-Won KANG, Min-Hee Choi