Abstract: The present disclosure relates generally to a switch driving circuit and power factor correction circuit having the same, and more particularly, to a technology to provide a negative offset using Zener diodes to prevent malfunctions in driving a switch. The switch driving circuit to operate a switch implemented with a Field Effect Transistor (FET) includes a first Zener diode connected to a control input end of the switch; a capacitor connected in parallel with the first Zener diode; and second and third Zener diodes for providing a negative offset to fix a voltage applied between the gate and source of the switch to a negative value.

Abstract: An air purifier according to an embodiment of the present invention may comprise: a memory for storing a flow rate/pressure differential correlation graph with regard to each filter utilization state; a pressure differential sensor for measuring a pressure differential, which is a difference in pressure between the front and rear ends of the filter; and a filter replacement time management unit for determining the time to replace the filter according to a result of matching a pressure differential of the filter, which is measured by the pressure differential sensor at a preset cycle, and the flow rate of air flowing into the filter during pressure differential measurement with the flow rate/pressure differential correlation graph for each utilization state.

Abstract: There is provided a compressor fixing structure capable of preventing vibrations from a compressor from being spread to the entirety of a product in which the compressor is installed. The compressor fixing structure includes: a plurality of support units disposed to have a polygonal structure and protruded from a bottom surface; a support unit anti-vibration rib protruded from a perimeter of each of the plurality of support units; and an outer anti-vibration rib surrounding the entirety of the plurality of support units and protruded from a bottom surface. Spreading of vibrations from a compressor installed in a product is minimized, reducing vibrations and noise generated by the compressor when the compressor is driven.

Abstract: Provided are an infrared photodetector and a method for manufacturing the same. The infrared photodetector includes a bottom contact layer, a light absorption layer stacked on the bottom contact layer, a top contact layer stacked on the light absorption layer, a metal layer stacked on the top contact layer to induce surface plasmon resonance and having a plurality of holes, and a dielectric layer stacked on the metal layer to satisfy an antireflection condition with respect to externally impinging light at a surface plasmon resonance frequency. The dielectric layer is a benzocyclobutene (BCB) layer.

Abstract: There are provided an air leakage preventing structure and an air cleaner having the same. The air leakage preventing structure includes: a partition unit having an inlet opening formed on one side thereof to allow air to be introduced therethrough and having a rib formed to be protruded from the circumference of the inlet opening; an air blowing fan coupled to the partition unit and rotating to allow air to be introduced through the inlet opening; a motor unit connected to the air blowing fan to rotate the air blowing fan; and an air guide unit connected to the rib formed to be protruded from the partition unit to form an outlet opening, and preventing air leakage when air introduced through the net opening flows out through the outlet opening.

Abstract: The present disclosure relates generally to a switch driving circuit and power factor correction circuit having the same, and more particularly, to a technology to provide a negative offset using Zener diodes to prevent malfunctions in driving a switch. The switch driving circuit to operate a switch implemented with a Field Effect Transistor (FET) includes a first Zener diode connected to a control input end of the switch; a capacitor connected in parallel with the first Zener diode; and second and third Zener diodes for providing a negative offset to fix a voltage applied between the gate and source of the switch to a negative value.

Abstract: Provided is a speech recognition method using machine learning, including: receiving a speech signal as an input, performing speech recognition to generate speech recognition result information including multiple candidate sentences and ranks of the respective candidate sentences; processing the multiple candidate sentences included in the speech recognition result information according to a machine learning model which is learned in advance and changing the ranks of the multiple candidate sentences to re-rank the multiple candidate sentences; and selecting the highest-rank candidate sentence among the re-ranked multiple candidate sentences as a speech recognition result.

Abstract: A power factor correction circuit and an electronic product including the same are disclosed. This technology configures a bridgeless circuit with no rectifier diode by using an additional switch, eliminating conduction loss due to the diode and reducing common mode EMI noise of the power factor correction circuit. A power factor correction circuit includes at least one inductor directly connected to an AC input stage, an output capacitor to smooth the output voltage, first switching elements to control current to store magnetic energy in the inductor, and a second switching element to maintain a substantially constant voltage between a ground voltage of an AC input stage and a ground voltage of an output stage.

Abstract: Provided is a speech recognition method using machine learning, including: receiving a speech signal as an input, performing speech recognition to generate speech recognition result information including multiple candidate sentences and ranks of the respective candidate sentences; processing the multiple candidate sentences included in the speech recognition result information according to a machine learning model which is learned in advance and changing the ranks of the multiple candidate sentences to re-rank the multiple candidate sentences; and selecting the highest-rank candidate sentence among the re-ranked multiple candidate sentences as a speech recognition result.

Abstract: There is provided a compressor fixing structure capable of preventing vibrations from a compressor from being spread to the entirety of a product in which the compressor is installed. The compressor fixing structure includes: a plurality of support units disposed to have a polygonal structure and protruded from a bottom surface; a support unit anti-vibration rib protruded from a perimeter of each of the plurality of support units; and an outer anti-vibration rib surrounding the entirety of the plurality of support units and protruded from a bottom surface. Spreading of vibrations from a compressor installed in a product is minimized, reducing vibrations and noise generated by the compressor when the compressor is driven.

Abstract: There are provided a compressor noise suppressing structure and a dehumidifier having the same. The compressor noise suppressing structure includes an installation member fixed to a base frame to support and accommodate a component installed within a housing, and a noise-proof member extending from the installation member to cover at least one side of the compressor to block noise from the compressor. According to the compressor noise suppressing structure, noise generated when the compressor is operated is simultaneously blocked by the nose-proof member and the housing, and the installation member and the noise-proof member are configured as a single component, improving assembly characteristics and simplifying a fabrication process.

Abstract: There are provided an air leakage preventing structure and an air cleaner having the same. The air leakage preventing structure includes: a partition unit having an inlet opening formed on one side thereof to allow air to be introduced therethrough and having a rib formed to be protruded from the circumference of the inlet opening; an air blowing fan coupled to the partition unit and rotating to allow air to be introduced through the inlet opening; a motor unit connected to the air blowing fan to rotate the air blowing fan; and an air guide unit connected to the rib formed to be protruded from the partition unit to form an outlet opening, and preventing air leakage when air introduced through the inlet opening flows out through the outlet opening.

Abstract: The present invention provides a semiconductor based photovoltaic device and a manufacturing method thereof. The semiconductor based photovoltaic device is able to absorb light with a wide band wavelength, and has high photoelectric conversion efficiency since it has high electron-hole pair separation efficiency.

Abstract: A semiconductor device includes transistors with a vertical gate electrode. In a transistor structure, a semiconductor pattern has first and second sides facing in a transverse direction, and third and fourth sides facing in a longitudinal direction. Gate patterns are disposed adjacent to the first and second sides of the semiconductor pattern. Impurity patterns directly contact the third and fourth sides of the semiconductor pattern. A gate insulating pattern is interposed between the gate patterns and the semiconductor pattern.

Abstract: A semiconductor device includes transistors with a vertical gate electrode. In a transistor structure, a semiconductor pattern has first and second sides facing in a transverse direction, and third and fourth sides facing in a longitudinal direction. Gate patterns are disposed adjacent to the first and second sides of the semiconductor pattern. Impurity patterns directly contact the third and fourth sides of the semiconductor pattern. A gate insulating pattern is interposed between the gate patterns and the semiconductor pattern.

Abstract: The present invention provides a semiconductor based photovoltaic device and a manufacturing method thereof. The semiconductor based photovoltaic device is able to absorb light with a wide band wavelength, and has high photoelectric conversion efficiency since it has high electron-hole pair separation efficiency.

Abstract: A semiconductor device includes transistors with a vertical gate electrode. In a transistor structure, a semiconductor pattern has first and second sides facing in a transverse direction, and third and fourth sides facing in a longitudinal direction. Gate patterns are disposed adjacent to the first and second sides of the semiconductor pattern. Impurity patterns directly contact the third and fourth sides of the semiconductor pattern. A gate insulating pattern is interposed between the gate patterns and the semiconductor pattern.

Abstract: The present invention relates to a spectroscopy analyzer for real-time diagnostics of process, and more particularly, to a spectroscopy analyzer for real-time diagnostics of process, in which a beam is injected to a reaction byproduct or a reactant and then an output beam is measured, thereby performing quantitative and qualitative analysis of the reaction byproduct or the reactant.

Abstract: A non-volatile memory device includes an upwardly protruding fin disposed on a substrate and a control gate electrode crossing the fin. A floating gate is interposed between the control gate electrode and the fin and includes a first storage gate and a second storage gate. The first storage gate is disposed on a sidewall of the fin, and the second storage gate is disposed on a top surface of the fin and is connected to the first storage gate. A first insulation layer is interposed between the first storage gate and the sidewall of the fin, and a second insulation layer is interposed between the second storage gate and the top surface of the fin. The second insulation layer is thinner than the first insulation layer. A blocking insulation pattern is interposed between the control gate electrode and the floating gate.

Abstract: A non-volatile memory device includes an upwardly protruding fin disposed on a substrate and a control gate electrode crossing the fin. A floating gate is interposed between the control gate electrode and the fin and includes a first storage gate and a second storage gate. The first storage gate is disposed on a sidewall of the fin, and the second storage gate is disposed on a top surface of the fin and is connected to the first storage gate. A first insulation layer is interposed between the first storage gate and the sidewall of the fin, and a second insulation layer is interposed between the second storage gate and the top surface of the fin. The second insulation layer is thinner than the first insulation layer. A blocking insulation pattern is interposed between the control gate electrode and the floating gate.