Abstract: A semiconductor integrated circuit device may include an isolating layer, a buried gate, source and drain regions, a dielectric layer having a high dielectric constant and an insulating interlayer. The isolating layer may be formed on a semiconductor substrate to define an active region. The buried gate may be formed in the active region of the semiconductor substrate. The source and drain regions may be formed in the active region at both sides of the buried gate. The dielectric layer may be configured to surround the source and drain regions. The insulating interlayer may be formed on the dielectric layer.

Abstract: An optical tracking system includes a reference marker part stationarily disposed relative to a first region; a sticker marker part attached in a sticker form to a second region capable of being rigidly registered with the first region; a shape measurement part measuring three-dimensional shapes of the first region and the second region; a tracking sensor part sensing the reference marker part and the shape measurement part; and a processing part acquiring a first coordinate transformation relationship among the reference marker part, the tracking sensor part, the shape measurement part, and the first region of the patent and a second coordinate transformation relationship among the reference marker part, the tracking sensor part, the shape measurement part, and the second region of the patient and tracking the first region by extracting a third coordinate transformation relationship between the first region and the second region.

Abstract: A semiconductor device may include a substrate, a first nanowire, a second nanowire, a first gate insulating layer, a second gate insulating layer, a first metal layer and a second metal layer. The first gate insulating layer may be along a periphery of the first nanowire. The second gate insulating layer may be along a periphery of the second nanowire. The first metal layer may be on a top surface of the first gate insulating layer along the periphery of the first nanowire. The first metal layer may have a first crystal grain size. The second metal layer may be on a top surface of the second gate insulating layer along the periphery of the second nanowire. The second metal layer may have a second crystal grain size different from the first crystal grain size.

Abstract: A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.

Abstract: A semiconductor device may include a substrate, a first nanowire, a second nanowire, a first gate insulating layer, a second gate insulating layer, a first metal layer and a second metal layer. The first gate insulating layer may be along a periphery of the first nanowire. The second gate insulating layer may be along a periphery of the second nanowire. The first metal layer may be on a top surface of the first gate insulating layer along the periphery of the first nanowire. The first metal layer may have a first crystal grain size. The second metal layer may be on a top surface of the second gate insulating layer along the periphery of the second nanowire. The second metal layer may have a second crystal grain size different from the first crystal grain size.

Abstract: A semiconductor device and a method for fabricating the same are provided.

Abstract: An optical tracking system includes a reference marker part stationarily disposed relative to a first region; a sticker marker part attached in a sticker form to a second region capable of being rigidly registered with the first region; a shape measurement part measuring three-dimensional shapes of the first region and the second region; a tracking sensor part sensing the reference marker part and the shape measurement part; and a processing part acquiring a first coordinate transformation relationship among the reference marker part, the tracking sensor part, the shape measurement part, and the first region of the patent and a second coordinate transformation relationship among the reference marker part, the tracking sensor part, the shape measurement part, and the second region of the patient and tracking the first region by extracting a third coordinate transformation relationship between the first region and the second region.

Abstract: The present invention relates to a method for preparing a curable bicyclic compound derived from biomass. The method includes preparing starting materials furan and methyl acrylate by preparing furan from hemicellulose extracted from biomass, and methyl acrylate from glycerol generated from biomass, preparing an intermediate compound comprising a bicycle and an alcohol functional group by reacting the furan and the methyl acrylate through a Diels-Alder reaction and consecutive reduction, and preparing a curable bicyclic compound that includes the bicycle and an epoxide functional group by reacting the intermediate compound and epichlorohydrin.

Abstract: A semiconductor device and a method for fabricating the same are provided.

Abstract: A semiconductor device may include a substrate, a first nanowire, a second nanowire, a first gate insulating layer, a second gate insulating layer, a first metal layer and a second metal layer. The first gate insulating layer may be along a periphery of the first nanowire. The second gate insulating layer may be along a periphery of the second nanowire. The first metal layer may be on a top surface of the first gate insulating layer along the periphery of the first nanowire. The first metal layer may have a first crystal grain size. The second metal layer may be on a top surface of the second gate insulating layer along the periphery of the second nanowire. The second metal layer may have a second crystal grain size different from the first crystal grain size.

Abstract: A semiconductor integrated circuit device may include an isolating layer, a buried gate, source and drain regions, a dielectric layer having a high dielectric constant and an insulating interlayer. The isolating layer may be formed on a semiconductor substrate to define an active region. The buried gate may be formed in the active region of the semiconductor substrate. The source and drain regions may be formed in the active region at both sides of the buried gate. The dielectric layer may be configured to surround the source and drain regions. The insulating interlayer may be formed on the dielectric layer.

Abstract: A ballast water treatment apparatus equipped with devices for injecting bromine salt and ozone includes a ballast pipe, a ballast pump, a bromine salt injection part and an ozone processor, wherein the injection part includes a bromine salt storage tank; a bromine salt transfer pipe connected to the ballast pipe for injecting bromine salt supplied from the bromine salt storage tank into the ballast pipe; and a bromine salt injection pump in the transfer pipe for pressurizing bromine salt to be injected into the ballast pipe, and the ozone processor includes an ozone injection device for supplying ozone to the ballast pipe; a mixer in the ballast pipe for mixing ozone supplied from the ozone injection device and seawater transferred into the ballast pipe; and an ozone transfer pipe connected to the mixer of the ballast pipe for injecting ozone supplied from the ozone injection device into the ballast pipe.

Abstract: Provided is a method for preparing 5-hydroxymethyl-2-furfural using an acid catalyst in the presence of an ethylene glycol-based solvent. The method for preparing the 5-hydroxymethyl-2-furfural involves using a linear or cyclic ethylene glycol-based compound as a solvent and producing the 5-hydroxymethyl-2-furfural from fructose, in the presence of the acid catalyst, thereby reducing the dependency on petroleum in response to greenhouse gas emission regulations. Also, a high yield of the 5-hydroxymethyl-2-furfural can be obtained from fructose, and the solvent and the catalyst can be efficiently separated, collected, and reused after a reaction has completed.

Abstract: A semiconductor device including a MOS transistor is provided. The semiconductor device may include a first MOS transistor including first source/drain regions, a first semiconductor layer between the first source/drain regions, a first gate electrode structure, and a first gate dielectric structure; and a second MOS transistor including second source/drain regions, a second semiconductor layer between the second source/drain regions, a second gate electrode structure, and a second gate dielectric structure. The first gate dielectric structure and the second gate dielectric structure include a first common dielectric structure; the first gate dielectric structure includes a first upper dielectric on the first common dielectric structure; the second gate dielectric structure includes the first upper dielectric and a second upper dielectric; and one of the first upper dielectric and the second upper dielectric is a material forming a dipole layer.

Abstract: Provided is a method for preparing levulinic acid using a solid acid catalyst in the presence of an ethylene glycol-based compound. The levulinic acid according to the present invention can be prepared by using a linear or cyclic ethylene glycol-based compound as a solvent and preparing the levulinic acid from fructose in the presence of the solid acid catalyst at a reaction temperature of 100 to 200° C., thereby reducing the dependency on petroleum in response to greenhouse gas emission regulations. Also, a high yield of levulinic acid can be obtained from fructose, and the solvent and the catalyst can be efficiently separated, collected, and reused after the reaction has completed.

Abstract: Disclosed are a method and a device for providing a hypertext markup language (HTML)-based program guide service, and a recording medium therefor. The method for providing a hypertext markup language (HTML)-based program guide service in a broadcast providing device, according to the present invention, comprises the steps of: outputting a start page according to a program guide service start request of a user, wherein a container included in a resource for the start page generates a first key handler for processing a key event of the user; and outputting one or more menu pages for menu navigation according to a request of the user, wherein the start page and each of the one or more menu pages have different resource addresses, and a life cycle of the one or more menu pages is managed by the first key handler.

Abstract: A magnetic device includes a free layer including a first magnetization layer; a pinned layer including a second magnetization layer; and a tunnel barrier layer provided between the free layer and the pinned layer. At least one selected from the free layer and the pinned layer includes a synthetic antiferromagnetic (SAF) structure formed of a first ferromagnetic layer, a second ferromagnetic layer, and a ruthenium-rhodium (Ru—Rh) alloy layer provided between the first and second ferromagnetic layers.

Abstract: The present invention relates to a curable bicyclic compound derived from biomass, solvent-free curable composition and a method for preparing thereof. The curable compound derived from biomass according to the invention comprises a bicycle structure, to which one of two epoxide functional groups are bonded.

Abstract: Provided are a magnetic memory device and a method of forming the same. The magnetic memory device includes a magnetic tunnel junction pattern located on a substrate and including magnetic patterns and a tunnel barrier pattern located between the magnetic patterns, and a first crystallinity conserving pattern located on the magnetic tunnel junction pattern and having a higher crystallization temperature than the magnetic patterns. The first crystallinity conserving pattern is amorphous.

Abstract: The present invention relates to a curable bicyclic compound derived from biomass, solvent-free curable composition and a method for preparing thereof. The curable compound derived from biomass according to the invention comprises a bicycle structure, to which one of two epoxide functional groups are bonded.