Patents by Inventor Sang-Yoon Lee

Sang-Yoon Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of patterning nano conductive film
    Patent number: 7884356
    Abstract: A donor substrate for forming a nano conductive film includes a base substrate and a transferring layer that is disposed on the base substrate. The transferring layer includes nano conductive particles and an organic semiconductor. A method of patterning a nano conductive film is provided, wherein a donor substrate in which nano conductive particles are dispersed by employing an organic semiconductor having low molecular weight as a binder is prepared, and nano conductive particles are patterned on a receptor substrate by employing the donor substrate. The method can be used to prepare patterns of various devices including a display device such as an OLED and an OTFT. Such a device can be prepared simply and economically by preparing a device comprising nano conductive particles and an organic semiconductor in wet basis even without deposition.
    Type: Grant
    Filed: March 31, 2006
    Date of Patent: February 8, 2011
    Assignee: Samsung Mobile Display Co., Ltd.
    Inventors: Jong-Jin Park, Myeong-Suk Kim, Tae-Yong Noh, Sung-Hun Lee, Sang-Yoon Lee, Eun-Jeong Jeong
  • Organometallic composition for forming a metal alloy pattern and a method of forming such a pattern using the composition
    Patent number: 7883838
    Abstract: An organometallic composition containing an organometallic compound (I) containing Ag, an organometallic compound (II) containing Au, Pd, or Ru, and an organometallic compound (III) containing Ti, Ta, Cr, Mo, Ru, Ni, Pd, Cu, Au, or Al, wherein the metal components of organometallic compounds (II) and (III), respectively, are present in an amount of 0.01˜10 mol % based on the amount of Ag in the organometallic compound (I), and a method of forming a metal alloy pattern using the same. Silver alloy patterns can be obtained through a simplified manufacturing process, which patterns have enhanced heat resistance, adhesiveness and chemical stability. The method may be applied to making a reflective film for LCD and metal wiring (gate, source, drain electrode) for flexible displays or flat panel displays, and further to CMP-free damascene processing and PR-free ITO film deposition.
    Type: Grant
    Filed: November 24, 2003
    Date of Patent: February 8, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jin Young Kim, Soon Taik Hwang, Young Hun Byun, Euk Che Hwang, Sang Yoon Lee
  • Aromatic enediyne derivative, organic semiconductor thin film, electronic device and methods of manufacturing the same
    Patent number: 7884358
    Abstract: Disclosed are a novel aromatic enediyne derivative, an organic semiconductor thin film using the same, and an electronic device. Example embodiments pertain to an aromatic enediyne derivative which enables the formation of a chemically and electrically stable and reliable semiconductor thin film using a solution process, e.g., spin coating and/or spin casting, at about room temperature when applied to devices, an organic semiconductor thin film using the same, and an electronic device including the organic semiconductor thin film. A thin film having a relatively large area may be formed through a solution process, therefore simplifying the manufacturing process and decreasing the manufacturing cost. Moreover, it is possible to provide an organic semiconductor that may be effectively applied to various fields including organic thin film transistors, electroluminescent devices, solar cells, and memory.
    Type: Grant
    Filed: June 4, 2007
    Date of Patent: February 8, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun Jeong Jeong, Hyun Sik Moon, Jeong Il Park, Sang Yoon Lee
  • Method for fabricating an organic thin film transistor by oxidation and selective reduction of organic semiconductor material
    Patent number: 7868322
    Abstract: Disclosed is a method for fabricating an organic thin film transistor by oxidation and selective reduction of an organic semiconductor material. According to the method, stability of interfaces between a semiconductor layer and source/drain electrodes of an organic thin film transistor may be guaranteed. Therefore, an organic thin film transistor fabricated by the method may exhibit improved performance characteristics, e.g., minimized or decreased contact resistance and increased charge carrier mobility.
    Type: Grant
    Filed: June 25, 2007
    Date of Patent: January 11, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Do Hwan Kim, Jung Seok Hahn, Sang Yoon Lee, Bon Won Koo
  • Transistor, electronic device including a transistor and methods of manufacturing the same
    Publication number: 20100321279
    Abstract: Disclosed are a transistor, an electronic device and methods of manufacturing the same, the transistor including a photo relaxation layer between a channel layer and a gate insulating layer in order to suppress characteristic variations of the transistor due to light. The photo relaxation layer may be a layer of a material capable of suppressing variations in a threshold voltage of the transistor due to light. The photo relaxation layer may contain a metal oxide such as aluminum (Al) oxide. The channel layer may contain an oxide semiconductor.
    Type: Application
    Filed: December 4, 2009
    Publication date: December 23, 2010
    Inventors: Ji-sim Jung, Sang-yoon Lee, Kwang-hee Lee, Jang-yeon Kwon, Kyoung-seok Son
  • Poly-crystalline thin film, thin film transistor formed from a poly-crystalline thin film and methods of manufacturing the same
    Patent number: 7851802
    Abstract: Example embodiments relate to a poly-crystalline silicon (Si) thin film, a thin film transistor (TFT) formed from a poly-crystalline silicon (Si) thin film and methods of manufacturing the same. The method of manufacturing the poly-crystalline Si thin film includes forming an active layer formed of amorphous Si on a substrate, coating a gold nanorod on the active layer, and irradiating infrared rays onto the gold nanorod to crystallize the active layer.
    Type: Grant
    Filed: July 18, 2008
    Date of Patent: December 14, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung-bae Park, Seon-mi Yoon, Sang-yoon Lee, Jae-young Choi, Hyeon-jin Shin, Myung-kwan Ryu, Tae-sang Kim, Jang-yeon Kwon, Kyung-seok Son, Ji-sim Jung
  • METHOD FOR OPERATING INPUT MODE OF MOBILE TERMINAL COMPRISING A PLURALITY OF INPUT MEANS
    Publication number: 20100302170
    Abstract: A method of operating an input mode of a mobile terminal having a first input means and a second input means is provided. The method includes: displaying an input screen which is set as a first input mode; determining whether the second input means is in an activated state; and displaying a changed input screen which is set as a second input mode when the second input means is determined to be in an activated state.
    Type: Application
    Filed: May 28, 2010
    Publication date: December 2, 2010
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jun Kyu KANG, Sang Yoon LEE, Ji Won CHOI, Dong Seong SEO
  • PROCESS OF PREPARING A RADIOACTIVE COMPOUND CONTAINING A FLUORINE-18 ISOTOPE
    Publication number: 20100292478
    Abstract: A process of preparing a radioactive compound containing a fluorine-18 isotope is provided. In one embodiment, the process may comprise forming a [18F] fluoroalkyl triflate by triflating a [18F] fluoroalkyl compound with AgOTf, and forming a [18F] fluoroalkylated radioactive compound through alkylation between the [18F] fluoroalkyl triflate and a radioactive compound precursor having at least one group selected from NH, OH and SH.
    Type: Application
    Filed: March 29, 2010
    Publication date: November 18, 2010
    Applicant: GACHON UNIVERSITY OF MEDICINE & SCIENCE INDUSTRY- ACADEMIC COOPERATION FOUNDATION
    Inventors: Zang Hee CHO, Young Bo Kim, Sang Yoon LEE, So Hee KIM
  • Method of fabricating thin film transistor
    Patent number: 7834352
    Abstract: A method of fabricating a thin film transistor, in which source and drain electrodes are formed through a solution process, even all stages which include formation of electrodes on a substrate, formation of an insulator layer, and formation of an organic semiconductor layer are conducted through the solution process. In the method, the fabrication is simplified and a fabrication cost is reduced. It is possible to apply the organic thin film transistor to integrated circuits requiring high speed switching because of high charge mobility.
    Type: Grant
    Filed: January 11, 2008
    Date of Patent: November 16, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Tae Woo Lee, Young Hun Byun, Yi Yeol Lyu, Sang Yoon Lee, Bon Won Koo
  • Organic polymer semiconductor compounds, methods of forming organic polymer semiconductor thin film using the same, and organic thin film transistors using the same
    Patent number: 7829373
    Abstract: Disclosed herein is an organic polymer semiconductor compound, a method of forming an organic polymer semiconductor thin film using the same, and an organic thin film transistor using the same. Example embodiments of this invention pertain to an organic polymer semiconductor having a side chain including a removable substituent, and to an organic thin film transistor using the organic polymer semiconductor for an organic active layer, which has lower leakage current, higher charge mobility, and/or a higher on/off ratio.
    Type: Grant
    Filed: November 10, 2005
    Date of Patent: November 9, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun Kyung Lee, Joo Young Kim, Bang Lin Lee, Sang-Yoon Lee, Eun Jeong Jeong
  • Oxide semiconductor and thin film transistor including the same
    Publication number: 20100276683
    Abstract: Provided are an oxide semiconductor and an oxide thin film transistor including the oxide semiconductor. The oxide semiconductor may be formed of an indium (In)-zinc (Zn) oxide in which hafnium (Hf) is contained, wherein In, Zn, and Hf are contained in predetermined or given composition ratios.
    Type: Application
    Filed: March 23, 2010
    Publication date: November 4, 2010
    Inventors: Tae-sang Kim, Sang-yoon Lee, Jang-yeon Kwon, Kyoung-seok Son, Ji-sim Jung, Kwang-hee Lee
  • Perfluoropolyether copolymer composition for forming banks
    Patent number: 7820730
    Abstract: Disclosed are a copolymer of a perfluoropolyether derivative and a photosensitive polymer, a composition for forming banks comprising the copolymer, and a method for forming banks using the composition. Also disclosed is an organic thin film transistor including the composition and an electronic device including the organic thin film transistor. The use of the copolymer may enable the formation of banks by a solution coating process. Because an organic thin film transistor including banks formed by the method may be fabricated without any degradation in the characteristics of the organic thin film transistor, improved electronic properties may be exhibited.
    Type: Grant
    Filed: February 26, 2007
    Date of Patent: October 26, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung Seok Hahn, Kyu Yeol In, Bon Won Koo, Kook Min Han, Sang-Yoon Lee
  • Heteroacene compound, organic thin film comprising the compound, and electronic device comprising the thin film
    Patent number: 7816673
    Abstract: A heteroacene compound includes a di-thieno-benzo-thieno-thiophene derivative, in which all six rings may be fused together, an organic thin film including the same, and an electronic device that includes the thin film as a carrier transport layer. The compound of example embodiments may have a compact planar structure to thus realize improved solvent solubility and processability. When the compound is applied to electronic devices, a deposition process or a room-temperature solution process may be applied, and as well, intermolecular packing and stacking may be efficiently realized, resulting in improved electrical properties, including increased charge mobility.
    Type: Grant
    Filed: August 8, 2007
    Date of Patent: October 19, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong Il Park, Eun Jeong Jeong, Sang Yoon Lee, Bang Lin Lee, Kook Min Han
  • Organic thin film transistor comprising phosphate-based self-assembled monolayer and method of manufacturing the same
    Patent number: 7816671
    Abstract: Disclosed is an organic thin film transistor including a phosphate-based self-assembled monolayer and a method of manufacturing the same. Example embodiments relate to an organic thin film transistor, which may include a single bond type phosphate-based self-assembled monolayer without intermolecular cross-linking, between source/drain electrodes and an organic semiconductor layer, thus exhibiting improved electrical properties, e.g., increased charge mobility, and to a method of manufacturing the organic thin film transistor.
    Type: Grant
    Filed: February 7, 2007
    Date of Patent: October 19, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeong Il Park, Jung Seok Han, Sang Yoon Lee, Eun Jeong Jeong, Kook Min Han
  • Solution composition for forming oxide thin film and electronic device including the oxide thin film
    Publication number: 20100258793
    Abstract: A solution composition for forming an oxide thin film may include a first compound including zinc, a second compound including indium, and a third compound including magnesium or hafnium, and an electronic device may include an oxide semiconductor including zinc, indium, and magnesium. The zinc and hafnium may be included at an atomic ratio of about 1:0.01 to about 1:1.
    Type: Application
    Filed: April 9, 2010
    Publication date: October 14, 2010
    Inventors: Jong-Baek Seon, Hyun-Jae Kim, Sang-Yoon Lee, Myung-Kwan Ryu, Hyun-Soo Shin, Kyung-Bae Park, Woong-Hee Jeong, Gun-Hee Kim, Byung-Du Ahn
  • Composition for forming passivation layer and organic thin film transistor comprising the passivation layer
    Patent number: 7781763
    Abstract: Disclosed herein is a composition including a perfluoropolyether derivative, a photosensitive polymer or a copolymer thereof, and a photocuring agent, a passivation layer, organic thin film transistor, and electronic device including the same, a method of forming the passivation layer and methods of fabricating the organic thin film transistor and electronic device. The organic thin film transistor may prevent or reduce oxygen and moisture from infiltrating thereinto, and thus may prevent or reduce the degradation of the performance thereof caused by ambient air, prevent or reduce the deterioration thereof, and may more easily be formed into a pattern, thereby exhibiting characteristics suitable for use in electronics.
    Type: Grant
    Filed: March 31, 2008
    Date of Patent: August 24, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung Seok Hahn, Do Hwan Kim, Bon Won Koo, Sang Yoon Lee, Hyun Sik Moon
  • Solution composition and method of forming thin film and method of manufacturing thin film transistor using the solution composition
    Publication number: 20100210069
    Abstract: Disclosed is a solution composition for forming a thin film transistor including a zinc-containing compound, an indium-containing compound, and a compound including at least one metal or metalloid selected from the group consisting of hafnium (Hf), magnesium (Mg), tantalum (Ta), cerium (Ce), lanthanum (La), silicon (Si), germanium (Ge), vanadium (V), niobium (Nb), and yttrium (Y). A method of forming a thin film by using the solution composition, and a method of manufacturing thin film transistor including the thin film are also disclosed.
    Type: Application
    Filed: February 12, 2010
    Publication date: August 19, 2010
    Inventors: Jong-Baek Seon, Sang-Yoon Lee, Jeong-il Park, Myung-Kwan Ryu, Kyung-Bae Park
  • Surface modifying agent, laminated structure and transistor including the same, and method of manufacturing the laminated structure
    Publication number: 20100200842
    Abstract: Disclosed is a surface modifying agent including a compound having an ethynyl group at one terminal end, a laminated structure manufactured using the surface modifying agent, a method of manufacturing the laminated structure, and a transistor including the same.
    Type: Application
    Filed: February 12, 2010
    Publication date: August 12, 2010
    Inventors: Jeong-il Park, Byung-Wook Yoo, Do-hwan Kim, Sang-Yoon Lee, Bang-lin Lee, Eun-jeong Jeong
  • Methods of manufacturing an oxide semiconductor thin film transistor
    Patent number: 7767505
    Abstract: Methods of manufacturing an oxide semiconductor thin film transistor are provided. The methods include forming a gate on a substrate, and a gate insulating layer on the substrate to cover the gate. A channel layer, which is formed of an oxide semiconductor, may be formed on the gate insulating layer. Source and drain electrodes may be formed on opposing sides of the channel layer. The method includes forming supplying oxygen to the channel layer, forming a passivation layer to cover the source and drain electrodes and the channel layer, and performing an annealing process after forming the passivation layer.
    Type: Grant
    Filed: May 22, 2008
    Date of Patent: August 3, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyoung-seok Son, Sang-yoon Lee, Myung-kwan Ryu, Tae-sang Kim, Jang-yeon Kwon, Kyung-bae Park, Ji-sim Jung
  • Organic thin film transistor having surface-modified carbon nanotubes
    Patent number: 7763885
    Abstract: An organic thin film transistor may comprise an organic semiconductor layer having surface-modified carbon nanotubes and an electrically-conductive polymer. The surfaces of the carbon nanotubes may be modified with curable functional groups, comprising oxirane groups and anhydride groups. A room-temperature solution process may be used to provide a relatively uniform and relatively highly-adhesive organic semiconductor layer in a simple and economical manner. Additionally, the organic thin film transistor having the organic semiconductor layer may have relatively high charge carrier mobility and relatively low threshold voltage.
    Type: Grant
    Filed: September 18, 2007
    Date of Patent: July 27, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kook Min Han, Kyu Yeol In, Jong Jin Park, Hyun Sik Moon, Sang Yoon Lee