Patents by Inventor Sang-Yoon Lee

Sang-Yoon Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • TRANSISTORS AND ELECTRONIC DEVICES INCLUDING THE TRANSISTORS
    Publication number: 20130043475
    Abstract: A transistor may include a light-blocking layer that blocks light incident on a channel layer. The light-blocking layer may include a carbon-based material. The carbon-based material may include graphene oxide, graphite oxide, graphene or carbon nanotube (CNT). The light-blocking layer may be between a gate and at least one of the channel layer, a source and a drain.
    Type: Application
    Filed: June 6, 2012
    Publication date: February 21, 2013
    Applicants: SAMSUNG MOBILE DISPLAY CO., LTD., SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyun-suk Kim, Sang-yoon Lee, Myung-kwan Ryu, Tae-sang Kim, Jong-baek Seon, Kyoung-seok Son, Won-mook Choi, Joon-seok Park, Mi-jeong Song
  • Oxide semiconductor and thin film transistor including the same
    Patent number: 8378342
    Abstract: Provided are an oxide semiconductor and an oxide thin film transistor including the oxide semiconductor. The oxide semiconductor may be formed of an indium (In)-zinc (Zn) oxide in which hafnium (Hf) is contained, wherein In, Zn, and Hf are contained in predetermined or given composition ratios.
    Type: Grant
    Filed: March 23, 2010
    Date of Patent: February 19, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Tae-sang Kim, Sang-yoon Lee, Jang-yeon Kwon, Kyoung-seok Son, Ji-sim Jung, Kwang-hee Lee
  • Organic thin film transistor
    Patent number: 8373161
    Abstract: Disclosed herein are a method for fabricating an organic thin film transistor, including treating the surfaces of a gate insulating layer and source/drain electrodes with a self-assembled monolayer (SAM)-forming compound through a one-pot reaction, and an organic thin film transistor fabricated by the method. According to example embodiments, the surface-treatment of the gate insulating layer and the source/drain electrodes may be performed in a single vessel through a single process.
    Type: Grant
    Filed: January 9, 2012
    Date of Patent: February 12, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Do Hwan Kim, Hyun Sik Moon, Byung Wook Yoo, Sang Yoon Lee, Bang Lin Lee, Jeong Il Park, Eun Jeong Jeong
  • Surface modifying agent, laminated structure and transistor including the same, and method of manufacturing the laminated structure
    Patent number: 8373158
    Abstract: Disclosed is a surface modifying agent including a compound having an ethynyl group at one terminal end, a laminated structure manufactured using the surface modifying agent, a method of manufacturing the laminated structure, and a transistor including the same.
    Type: Grant
    Filed: February 12, 2010
    Date of Patent: February 12, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeong-il Park, Byung-wook Yoo, Do-hwan Kim, Sang-yoon Lee, Bang-lin Lee, Eun-jeong Jeong
  • METHOD OF PREPARING THIN FILM, THIN FILM, APPARATUS FOR PREPARING THIN FILM, AND ELECTRONIC DEVICE INCLUDING THIN FILM
    Publication number: 20130034708
    Abstract: A method of preparing a thin film includes coating a thin film-forming composition on a substrate, and heat-treating the coated thin film-forming composition under a pressure less than 760 Torr. The thin film includes a compact layer having a thickness in a range of greater than 50 ? to about 20,000 ? and a refractive index in a range of about 1.85 to about 2.0.
    Type: Application
    Filed: August 3, 2012
    Publication date: February 7, 2013
    Applicants: SAMSUNG DISPLAY CO., LTD., SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Myung-kwan Ryu, Jong-baek Seon, Sang-yoon Lee
  • Composition for producing organic insulator comprising an organic-inorganic metal hybrid material
    Patent number: 8367771
    Abstract: A composition for producing an organic insulator is provided which comprises an organic-inorganic hybrid material (as defined). The hybrid material shows high solubility in organic solvents and monomers, and superior adhesion to substrates. In addition, the hybrid material displays a high dielectric constant and a high degree of crosslinking. Based on these advantages, the composition comprising the organic-inorganic hybrid material can be utilized during the fabrication of various electronic devices by a wet process. A method for producing the organic insulator while utilizing the composition also is provided, as well as the resulting organic insulator, and an organic thin film transistor which incorporates the resulting insulating layer.
    Type: Grant
    Filed: February 13, 2009
    Date of Patent: February 5, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung Han Shin, Jae Jun Lee, Chang Ju Kim, Sang Yoon Lee
  • Aromatic enediyne derivative, organic semiconductor thin film, electronic device and methods of manufacturing the same
    Patent number: 8362471
    Abstract: Disclosed are a novel aromatic enediyne derivative, an organic semiconductor thin film using the same, and an electronic device. Example embodiments pertain to an aromatic enediyne derivative which enables the formation of a chemically and electrically stable and reliable semiconductor thin film using a solution process, e.g., spin coating and/or spin casting, at about room temperature when applied to devices, an organic semiconductor thin film using the same, and an electronic device including the organic semiconductor thin film. A thin film having a relatively large area may be formed through a solution process, therefore simplifying the manufacturing process and decreasing the manufacturing cost. Moreover, it is possible to provide an organic semiconductor that may be effectively applied to various fields including organic thin film transistors, electroluminescent devices, solar cells, and memory.
    Type: Grant
    Filed: December 29, 2010
    Date of Patent: January 29, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun Jeong Jeong, Hyun Sik Moon, Jeong Ii Park, Sang Yoon Lee
  • LIGHT REFRACTION CONTROLLING PANEL, 3D-DISPLAY COMPRISING THE SAME, AND METHOD OF OPERATING THE 3D-DISPLAY
    Publication number: 20130021388
    Abstract: A light refraction controlling panel, a 3D-display, and a method of operating a 3D-display are provided. The light refraction controlling panel includes a transparent substrate, a barrier wall on the transparent substrate, first to fourth electrodes on the barrier wall, the first to fourth electrodes being separated from each other, an electro-wetting prism within the barrier wall, the electro-wetting prism being configured to refract incident light to a desired direction, and an isolation layer between the barrier wall and the first to fourth electrodes, and the electro-wetting prism. One electrode of two adjacent electrodes of the first to fourth electrodes is inside an other electrode of the two adjacent electrodes.
    Type: Application
    Filed: July 20, 2012
    Publication date: January 24, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyu-hwan Choi, Jung-mok Bae, Hoon Song, Sang-yoon Lee, Yoon-sun Choi, Eok-su Kim
  • Method Of Manufacturing Electric Device, Array Of Electric Devices, And Manufacturing Method Therefor
    Publication number: 20130001554
    Abstract: An example embodiment relates to a method of manufacturing an array of electric devices that includes attaching a platform including a micro-channel structure to a substrate. The method includes injecting first and second solutions into the micro-channel structure to form at least three liquid film columns, where the first and second solutions include different solvent composition ratios and the liquid columns each, respectfully, include different solvent composition ratios. The method further includes detaching the platform the substrate, removing solvent from the liquid film columns to form thin film columns, and treating the thin film columns under different conditions along a length direction of the thin film columns. The solvent is removed from the thin film columns and the thin film columns are treated under different conditions along a length direction of the thin film columns.
    Type: Application
    Filed: June 30, 2011
    Publication date: January 3, 2013
    Applicants: The Board of Trustees of the Leland Stanford Junior University, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jong Won Chung, Christopher J. Bettinger, Zhenan Bao, Do Hwan Kim, Bang Lin Lee, Jeong il Park, Yong Wan Jin, Sang Yoon Lee
  • ACOUSTO-OPTIC DEVICE HAVING MULTI-LAYER NANOSTRUCTURE, OPTICAL SCANNER, OPTICAL MODULATOR, AND DISPLAY APPARATUS USING THE ACOUSTO-OPTIC DEVICE
    Publication number: 20130003066
    Abstract: An acousto-optic device includes an acousto-optic medium having a multi-layer nanostructure; and a sonic wave generator configured to apply sonic waves to the acousto-optic medium having the multi-layer nanostructure. The acousto-optic medium having the multi-layer nanostructure includes a second layer formed of at least two materials that have different dielectric constants and alternate with each other; and a first layer disposed on a first surface of the second layer and formed of a first material, and/or a third layer disposed on a second surface of the second layer and formed of a fourth material.
    Type: Application
    Filed: June 26, 2012
    Publication date: January 3, 2013
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Seung-hoon HAN, Wan-joo Maeng, Sang-yoon Lee
  • Methods for forming banks and organic thin film transistors comprising such banks
    Patent number: 8323875
    Abstract: Disclosed is a method for forming banks during the fabrication of electronic devices incorporating an organic semiconductor material that includes preparing an aqueous coating composition having at least a water-soluble polymer, a UV curing agent and a water-soluble fluorine compound. This coating composition is applied to a substrate, exposed using UV radiation and then developed using an aqueous developing composition to form the bank pattern. Because the coating composition can be developed using an aqueous composition rather than an organic solvent or solvent system, the method tends to preserve the integrity of other organic structures present on the substrate. Further, the incorporation of the fluorine compound in the aqueous solution provides a degree of control over the contact angles exhibited on the surface of the bank pattern and thereby can avoid or reduce subsequent surface treatments.
    Type: Grant
    Filed: December 4, 2006
    Date of Patent: December 4, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Bon Won Koo, Joon Yong Park, Jung Seok Hahn, Joo Young Kim, Kook Min Han, Sang Yoon Lee
  • Solution composition for forming oxide thin film and electronic device including the oxide thin film
    Patent number: 8319300
    Abstract: A solution composition for forming an oxide thin film may include a first compound including zinc, a second compound including indium, and a third compound including magnesium or hafnium, and an electronic device may include an oxide semiconductor including zinc, indium, and magnesium. The zinc and hafnium may be included at an atomic ratio of about 1:0.01 to about 1:1.
    Type: Grant
    Filed: April 9, 2010
    Date of Patent: November 27, 2012
    Assignees: Samsung Electronics Co., Ltd., Industry-Academic Cooperation Foundation, Yonsei University
    Inventors: Jong-Baek Seon, Hyun-Jae Kim, Sang-Yoon Lee, Myung-Kwan Ryu, Hyun-Soo Shin, Kyung-Bae Park, Woong-Hee Jeong, Gun-hee Kim, Byung-Du Ahn
  • THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20120295407
    Abstract: A thin film transistor (TFT) and a method of manufacturing the same are provided, the TFT including a gate insulating layer on a gate. A channel may be formed on a portion of the gate insulating layer corresponding to the gate. A metal material may be formed on a surface of the channel. The metal material crystallizes the channel. A source and a drain may contact side surfaces of the channel.
    Type: Application
    Filed: August 1, 2012
    Publication date: November 22, 2012
    Inventors: Byung-wook YOO, Sang-yoon LEE, Myung-kwan RYU, Tae-sang KIM, Jang-yeon KWON, Kyung-bae PARK, Kyung-seok SON, Ji-sim JUNG
  • Organic semiconductor copolymers containing oligothiophene and n-type heteroaromatic units
    Patent number: 8313978
    Abstract: An exemplary organic semiconductor copolymer includes a polymeric repeat structure having a polythiophene structure and an electron accepting unit. The electron accepting unit has at least one electron-accepting heteroaromatic structure with at least one electron-withdrawing imine nitrogen in the heteroaromatic structure or a thiophene-arylene comprising a C2-30 heteroaromatic structure. Methods of synthesis and electronic devices incorporating the disclosed organic semiconductors, e.g., as a channel layer, are also disclosed.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: November 20, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Bang Lin Lee, Kook Min Han, Jung Han Shin, Sang Yoon Lee, Eun Jeong Jeong
  • MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME
    Publication number: 20120280340
    Abstract: A memory device includes a lower electrode formed on a substrate, and an information storage unit formed on the lower electrode. The information storage unit includes a plurality of information storage layers spaced apart from one another. Each of the plurality of information storage layers is an information unit. A method of manufacturing a memory device uses a porous film to form the plurality of information storage layers.
    Type: Application
    Filed: May 2, 2012
    Publication date: November 8, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sun-kook Kim, Woong Choi, Seung-hoon Han, Yong-wan Jin, Sang-yoon Lee
  • Jig for round solder ball attachment
    Patent number: 8286851
    Abstract: Disclosed herein is a jig for solder ball attachment capable of sensing whether missing balls occur by electrical sensing using an electrical sensor structure in which a conductive thin film is embedded in the jig and electrically sensing whether abnormal solder balls, for example, large ball/small ball/ball size are attached, without confirming whether abnormal solder balls, for example, large ball/small ball/ball size are attached by vision one by one, thereby shortening operating time and improving workability.
    Type: Grant
    Filed: September 15, 2011
    Date of Patent: October 16, 2012
    Assignee: Samsung Electro-Mechanics Co., Ltd
    Inventor: Sang Yoon Lee
  • Composition for preparing organic insulating film, organic insulating film prepared by using the same and organic thin film transistor comprising the organic insulating film
    Patent number: 8273460
    Abstract: Disclosed are a composition comprising an organic insulating polymer in which a photo-reactive functional group showing an increased crosslinking degree is introduced into a side-chain, an organic insulating film comprising the composition, an organic thin film transistor (OTFT) comprising the organic insulating film, an electronic device comprising the organic thin film transistor and methods of fabricating the organic insulating film, the organic thin film transistor and the electronic device. The OTFT comprising the organic insulating film of example embodiments may not show any hysteresis during the driving of the OTFT, and therefore, may exhibit a homogeneous property.
    Type: Grant
    Filed: April 6, 2007
    Date of Patent: September 25, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun Kyung Lee, Joo Young Kim, Sang Yoon Lee, Jung Seok Hahn
  • Monoclonal antibody specific to anthrax toxin
    Patent number: 8268316
    Abstract: Disclosed is a monoclonal antibody having very high affinity to anthrax toxin and potent toxin-neutralizing activity. Also disclosed are a composition for neutralizing anthrax toxin comprising the antibody and a kit for detecting anthrax toxin.
    Type: Grant
    Filed: March 10, 2006
    Date of Patent: September 18, 2012
    Assignee: Aprogen, Inc
    Inventors: Hyo Jeong Hong, Kyung Soo Inn, Nam Kyu Lim, Jung Whan Kim, Keun Soo Kim, Sang Yoon Lee, Se Yeon Kim, Hyun Jung Kang, Mee Sook Oh
  • ULTRA-HIGH-STRENGTH STEEL WIRE HAVING EXCELLENT RESISTANCE TO DELAYED FRACTURE AND MANUFACTURING METHOD THEREOF
    Publication number: 20120227872
    Abstract: An ultra-high-strength steel wire rod having excellent resistance to delayed fracture includes, by wt %, 0.7-1.2% C, 0.25-0.5% Si, 0.5-0.8% Mn, 0.02-0.1% V and a balance of Fe and inevitable impurities. The method includes the steps of heating the above steel composition to 1100° C. or lower and hot rolling at a temperature of 900-1000° C., followed by cooling to 600-650° C. at a prescribed rate, followed by cold drawing at a reduction ratio of 60-80%.
    Type: Application
    Filed: December 23, 2010
    Publication date: September 13, 2012
    Applicant: POSCO
    Inventors: Dong-Hyun Kim, You-Hwan Lee, Sang-Yoon Lee, Hyung-Keun Cho
  • Thin film transistor and method of manufacturing the same
    Patent number: 8263978
    Abstract: A thin film transistor (TFT) and a method of manufacturing the same are provided, the TFT including a gate insulating layer on a gate. A channel may be formed on a portion of the gate insulating layer corresponding to the gate. A metal material may be formed on a surface of the channel. The metal material crystallizes the channel. A source and a drain may contact side surfaces of the channel.
    Type: Grant
    Filed: May 6, 2009
    Date of Patent: September 11, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Byung-wook Yoo, Sang-yoon Lee, Myung-kwan Ryu, Tae-sang Kim, Jang-yeon Kwon, Kyung-bae Park, Kyung-seok Son, Ji-sim Jung