Abstract: A semiconductor device includes a first active region that extends on a substrate in a first direction, a second active region that extends in parallel with the first active region, an element isolation region between the first and second active regions, a gate structure that extends in a second direction different from the first direction, and intersects the first and second active regions, a lower contact spaced apart from the gate structure in the first direction, the lower contact being on the first active region, the element isolation region, and the second active region, and an upper contact on the lower contact between the first active region and the second active region. A width of the lower contact in the first direction that is on the first active region m narrower than a width of the lower contact in the first direction that is on the element isolation region.

Abstract: A semiconductor device includes a substrate having a plurality of fins protruding therefrom and an active region on the fins. The device further includes a contact including a conductive region having a concave portion defining an upper portion and a lower portion of the conductive region, an interlayer insulating layer on the active region, and a side insulating layer interposed between the interlayer insulating layer and the lower portion of the conductive region.

Abstract: An integrated circuit device includes a substrate having a fin-type active region that extends in a first direction, a gate structure that intersects the fin-type active region on the substrate and extends in a second direction perpendicular to the first direction and parallel to an upper surface of the substrate, a guide pattern that extends on the gate structure in the second direction and has an inclined side surface that extends in the second direction, source/drain regions disposed on both sides of the gate structure, and a first contact that is electrically connected to one of the source/drain regions and in which an upper portion contacts the inclined side surface of the guide pattern. The width of an upper portion of the guide pattern in the first direction is less than the width of a lower portion of the guide pattern in the first direction.

Abstract: A semiconductor device includes a first active region that extends on a substrate in a first direction, a second active region that extends in parallel with the first active region, an element isolation region between the first and second active regions, a gate structure that extends in a second direction different from the first direction, and intersects the first and second active regions, a lower contact spaced apart from the gate structure in the first direction, the lower contact being on the first active region, the element isolation region, and the second active region, and an upper contact on the lower contact between the first active region and the second active region. A width of the lower contact in the first direction that is on the first active region m narrower than a width of the lower contact in the first direction that is on the element isolation region.

Abstract: An infrared optical filter may include a glass ceramic layer, a multilayer oxide thin film formed on a first surface of the glass ceramic layer, and a low reflectivity coating layer formed on a second surface of the glass ceramic layer.

Abstract: A semiconductor device includes an active fin extended in a first direction on a substrate. A gate structure extends in a second direction, wherein the gate structure intersects the active fin and covers an upper portion of the active fin. A source/drain region is positioned on the active fin adjacent to the gate structure. A silicide layer is on the source/drain region. A contact plug is connected to the source/drain region. A void is present between the silicide layer and the contact plug.

Abstract: A semiconductor device includes an active fin extended in a first direction on a substrate. A gate structure extends in a second direction, wherein the gate structure intersects the active fin and covers an upper portion of the active fin. A source/drain region is positioned on the active fin adjacent to the gate structure. A silicide layer is on the source/drain region. A contact plug is connected to the source/drain region. Avoid is present between the silicide layer and the contact plug.

Abstract: A semiconductor device includes a substrate having a plurality of fins protruding therefrom and an active region on the fins. The device further includes a contact including a conductive region having a concave portion defining an upper portion and a lower portion of the conductive region, an interlayer insulating layer on the active region, and a side insulating layer interposed between the interlayer insulating layer and the lower portion of the conductive region.

Abstract: A new imaging phantom called a “fusion phantom” enhances the efficiency of performance testing and quality control. The phantom relocates the test elements of a standard MRI phantom, and provides a configuration of inner containers that enables simultaneous performance testing on magnetic resonance imaging and magnetic resonance spectroscopy within a predetermined error range. The fusion phantom is useful for multi-purpose performance testing of magnetic resonance imaging equipment, including correlation analysis, performance testing, system management and the like in the diagnosis field. The fusion phantom enhances efficiency of time and reliability in testing performance of the magnetic resonance imaging equipment, adjusts incorrect position accuracy and improves quality of images.

Abstract: A transparent substrate with a multilayer anti-glare coating includes a transparent substrate; a first coating layer formed on the transparent substrate and being formed of a first dielectric layer having a refractive index of n1; a second coating layer formed on the first coating layer and being formed of a metal oxide layer having a refractive index of n2; a third coating layer formed on the second coating layer and being formed of a second dielectric layer having a refractive index of n3; and a fourth coating layer formed on the third coating layer and being formed of a third dielectric layer having a refractive index of n4. The refractive indexes of the coating layers satisfy: n1=n3>n2>n4.

Abstract: The present disclosure relates to a resin film for laminated glass, laminated glass including the resin film, and a vehicle including the laminated glass. The resin film for laminated glass includes a resin layer having a 3-layer structure, and the resin layer is formed of a resin composition of a specific component.

Abstract: An infrared optical filter may include a glass ceramic layer, a multilayer oxide thin film formed on a first surface of the glass ceramic layer, and a low reflectivity coating layer formed on a second surface of the glass ceramic layer.

Abstract: An X-ray source is disposed and a detector is disposed adjacent to the X-ray source. A test specimen holder is disposed between the X-ray source and the detector. A filter is disposed between the X-ray source and the test specimen holder. The filter has a plate-shaped semiconductor, a granular semiconductor, or a combination thereof.

Abstract: An X-ray source is disposed and a detector is disposed adjacent to the X-ray source. A test specimen holder is disposed between the X-ray source and the detector. A filter is disposed between the X-ray source and the test specimen holder. The filter has a plate-shaped semiconductor, a granular semiconductor, or a combination thereof.

Abstract: Disclosed is a coating composition for wet coating to block ultraviolet light radiation as being applied on a vehicle glass. The composition comprises: a binder including an amount of about 15 to 20% by weight of tetraethoxysilane (TEOS) and an amount of about 10 to 15% by weight of glycidoxypropyltrimethoxysilane (GPTS), an amount of about 20 to 35% by weight of an organic solvent, an amount of about 0.5 to 2% by weight of a curing agent, an amount of about 0.1 to 0.5% by weight of a leveling agent, an amount of about 10 to 40% by weight of a hydrophobically surface-treated inorganic nanosol, an amount of about 8 to 12% by weight of an inorganic ultraviolet blocking agent and an amount of about 1 to 3% by weight of a fluorescent whitening agent, all these % by weights based on the total weight of the coating composition. Accordingly, the coating composition may be used as a vehicle glass coating agent due to substantially improved abrasion resistance and durability.

Abstract: A transparent substrate with a multilayer anti-glare coating includes a transparent substrate; a first coating layer formed on the transparent substrate and being formed of a first dielectric layer having a refractive index of n1; a second coating layer formed on the first coating layer and being formed of a metal oxide layer having a refractive index of n2; a third coating layer formed on the second coating layer and being formed of a second dielectric layer having a refractive index of n3; and a fourth coating layer formed on the third coating layer and being formed of a third dielectric layer having a refractive index of n4. The refractive indexes of the coating layers satisfy: n1=n3>n2>n4.

Abstract: A planar lighting mirror in which nano-patterns are formed on an entirety or at a specific local area of a mirror surface of a mirror glass and a light source is disposed around the nano-patterns to be used like a mirror in normal operation. In particular, when the light source is activated, the entirety or the specific local area of the mirror surface with the nano-patterns formed thereon planarly emits light from the light source which flows into the side of the mirror glass so as not to deteriorate a mirrors reflective functions.

Abstract: A surface inspection apparatus and method of inspecting chip surfaces includes a laser generator that generates a periodic CW laser and is transformed into an inspection laser beam having a beam size smaller than a surface size of the chip. Thus, the inspection laser beam is irradiated onto a plurality of the semiconductor chips such that the semiconductor chips are partially and simultaneously heated. Thermal waves are detected in response to the inspection laser beam and thermal images are generated corresponding to the thermal waves. A surface image is generated by a lock-in thermography technique and hold exponent analysis of the thermal image, thereby generating surface image in which a surface defect is included. Time and accuracy of the surface inspection process is improved.

Abstract: A semiconductor device has improved reliability by preventing a fuse cut through a repair process from being electrically reconnected by electrochemical migration. The semiconductor device includes a substrate, a fuse including a first fuse pattern and a second fuse pattern formed at the same level on the substrate, the first fuse pattern and the second fuse pattern being spaced a first width apart from each other such that a gap in the fuse is disposed at a first location between the first fuse pattern and the second fuse pattern, and a first insulation layer formed on the first fuse pattern and the second fuse pattern, the first insulation layer including an opening above the first location and having a second width smaller than the first width.

Abstract: Disclosed is a method for preparing rod-like silica fine particles including carbon, the method including: a first step of preparing a mixed solvent by mixing a surfactant with alcohol, and then preparing a mixed solution by adding water, ethanol, ammonia water and a salt to the mixed solvent; a second step of forming rod-like silica fine particles by adding a silica precursor to the mixed solution; and a third step of carbonizing the rod-like silica fine particles, and through a sol-gel reaction of the silica precursor and a carbonization process thereof.