Abstract: The present invention relates to a composition for forming a conductive pattern capable of forming a fine conductive pattern on a variety of polymer resin products or resin layers by a significantly simple process, a method for forming a conductive pattern using the same, and a resin structure having a conductive pattern. The composition for forming a conductive pattern includes: a polymer resin; and a non-conductive metal compound including at least one of first and second metals as a predetermined non-conductive metal compound including the first and second metals, wherein a metal core including the first or second metal, or an ion thereof is formed from the non-conductive metal compound by electromagnetic irradiation.

Abstract: The present invention relates to a method of preparing silicon oxide, in which the amounts of silicon and oxygen are appropriately controlled by decreasing the amount of the oxygen from silicon oxide containing a relatively large amount of oxygen, silicon oxide prepared by the method, and a secondary battery including the same. According to the method of preparing silicon oxide, silicon oxide (first silicon oxide) including a relatively large amount of oxygen is heat treated in a reducing atmosphere to decrease the amount of the oxygen in the silicon oxide (first silicon oxide) and to prepare silicon oxide (second silicon oxide) including silicon and oxygen in an appropriate amount (Si:SiO2=1:0.7-0.98), thereby improving capacity and initial efficiency and securing stability and cycle properties (lifetime characteristics) of the secondary battery.

Abstract: The present invention relates to a composition for forming a conductive pattern, which is able to form a fine conductive pattern onto a variety of polymer resin products or resin layers by a very simple process, a method for forming the conductive pattern using the same, and a resin structure having the conductive pattern.

Abstract: The present invention relates to a composition for forming a conductive pattern capable of forming a fine conductive pattern on a variety of polymer resin products or resin layers by a significantly simple process, a method for forming a conductive pattern using the same, and a resin structure having a conductive pattern. The composition for forming a conductive pattern includes: a polymer resin; and a non-conductive metal compound including at least one of first and second metals as a predetermined non-conductive metal compound including the first and second metals, wherein a metal core including the first or second metal, or an ion thereof is formed from the non-conductive metal compound by electromagnetic irradiation.

Abstract: The present invention relates to a composition for forming a conductive pattern which is capable of forming a fine conductive pattern on a variety of polymeric resin products or resin layers by a simplified process, while imparting excellent flame retardancy to the resin products or resin layers, and a resin structure having the conductive pattern obtained using the composition. The composition for forming a conductive pattern includes: a polymer resin; a non-conductive metal compound including a first metal element and a second metal element, having a R3m or P63/mmc space group in crystal structure; and a flame retardant, wherein a metal nucleus including the first metal element, the second metal element or an ion thereof is formed from the non-conductive metal compound by the electromagnetic irradiation.

Abstract: Provided are a method for forming conductive pattern by direct radiation of an electromagnetic wave capable of forming fine conductive patterns on various kinds of polymer resin products or resin layers by a simplified process, even without containing specific inorganic additives in the polymer resin itself, and a resin structure having the conductive pattern formed thereon. The method for forming the conductive pattern by direct radiation of the electromagnetic wave includes: forming a first region having a predetermined surface roughness by selectively radiating the electromagnetic wave on a polymer resin substrate; forming a conductive seed on the polymer resin substrate; forming a metal layer by plating the polymer resin substrate having the conductive seed formed thereon; and removing the conductive seed and the metal layer from a second region of the polymer resin substrate, wherein the second region has surface roughness smaller than that of the first region.

Abstract: This disclosure relates to a composition for forming a conductive pattern that enables formation of fine conductive pattern on various polymer resin products or resin layers by a simplified process, and more effectively fulfills requirements of the art such as realization of various colors and the like, and a resin structure having a conductive pattern. The composition for forming a conductive pattern comprises a polymer resin; and a non-conductive metal compound including a first metal and a second metal, having a NASICON crystal structure represented by the following Chemical Formula 1, wherein a metal nucleus including the first metal or an ion thereof is formed from the non-conductive metal compound by electromagnetic irradiation.

Abstract: Provided are a method for forming conductive pattern by direct radiation of an electromagnetic wave capable of forming fine conductive patterns on various kinds of polymer resin products or resin layers under a relatively low power by a simplified process, even without containing specific inorganic additives in the polymer resin itself, and a resin structure having the conductive pattern formed thereon.

Abstract: Provided are a method for forming conductive pattern by direct radiation of an electromagnetic wave capable of forming fine conductive patterns on various kinds of polymer resin products or resin layers by a simplified process, and appropriately implementing the polymer resin products having white color or various colors, and the like, even without containing specific inorganic additives in the polymer resin itself, and a resin structure having the conductive pattern formed therefrom.

Abstract: The present invention relates to a composition for forming a conductive pattern, which is able to form a fine conductive pattern onto a variety of polymer resin products or resin layers by a very simple process, a method for forming the conductive pattern using the same, and a resin structure having the conductive pattern.

Abstract: The present invention relates to a composition for forming a conductive pattern which is capable of forming a fine conductive pattern reducing deterioration of mechanical-physical properties and having excellent adhesion strength onto a variety of polymeric resin products or resin layers, a method for forming the conductive pattern using the same, and a resin structure having the conductive pattern. The composition for forming a conductive pattern includes a polymer resin; and non-conductive metal compound particles including a first metal element and a second metal element, having a R 3m or P63/mmc space group in crystal structure, and having a particle size of 0.1 to 20 ?m, wherein a metal nuclei including the first metal or the second metal element or an ion thereof is formed from the non-conductive metal compound particles by electromagnetic irradiation.

Abstract: Disclosed is an apparatus and method for manufacturing SiO, which may lower a manufacturing cost of SiO by collecting SiO continuously. The apparatus for manufacturing SiO includes a reaction unit configured to receive a SiO-making material and bring the received material into reaction by heating to generate a SiO gas; and a collecting unit configured to maintain an internal temperature lower than an internal temperature of the reaction unit, the collecting unit including a rotating member in an inner space thereof, wherein the collecting unit collects a SiO deposit by introducing the SiO gas generated by the reaction unit through an inlet formed at least at one side thereof and allowing the introduced SiO gas to be deposited to a surface of the rotating member.

Abstract: The present invention relates to a method of preparing silicon oxide, in which the amounts of silicon and oxygen are appropriately controlled by decreasing the amount of the oxygen from silicon oxide containing a relatively large amount of oxygen, silicon oxide prepared by the method, and a secondary battery including the same. According to the method of preparing silicon oxide, silicon oxide (first silicon oxide) including a relatively large amount of oxygen is heat treated in a reducing atmosphere to decrease the amount of the oxygen in the silicon oxide (first silicon oxide) and to prepare silicon oxide (second silicon oxide) including silicon and oxygen in an appropriate amount (Si:SiO2=1:0.7-0.98), thereby improving capacity and initial efficiency and securing stability and cycle properties (lifetime characteristics) of the secondary battery.

Abstract: Provided is silicon oxide for an anode active material of a secondary battery. More particularly, the present invention provides silicon oxide included in an anode active material of a secondary battery, wherein a ratio of a maximum height (h2) of a peak in a 2 theta range of 40° to 60° to a maximum height (h1) of a peak in a 2 theta range of 15° to 40° in a X-ray diffraction (XRD) pattern of the silicon oxide satisfies 0.40?h2/h1?1.5.

Abstract: Provided are a silicon oxide-carbon composite and a method of manufacturing the same. More particularly, the present invention provides a method of manufacturing a silicon oxide-carbon composite including mixing silicon and silicon dioxide to be included in a reaction chamber, depressurizing a pressure of the reaction chamber to obtain a high degree of vacuum while increasing a temperature in the reaction chamber to a reaction temperature, reacting the mixture of silicon and silicon dioxide in a reducing atmosphere, and coating a surface of silicon oxide manufactured by the reaction with carbon, and a silicon oxide-carbon composite manufactured thereby.

Abstract: Provided is a method of manufacturing silicon oxide by which an amount of oxygen of the silicon oxide may be controlled. The method of manufacturing silicon oxide may include mixing silicon and silicon dioxide to be included in a reaction chamber, depressurizing a pressure of the reaction chamber to obtain a high degree of vacuum while increasing a temperature in the reaction chamber to a reaction temperature, and reacting the mixture of silicon and silicon dioxide in a reducing atmosphere.

Abstract: An oven in which a cooking space in a cooking chamber is dividable into a plurality of individual cooking spaces by a partition member. The oven includes a door assembly including a main door rotatably combined with a main body and provided with a plurality of openings corresponding to the respective plurality of individual cooking spaces and a plurality of individual doors rotatably combined with the main body to open and close the respective plurality of openings. The door assembly may selectively open and close the entirety of the cooking space or the respective plurality of individual cooking spaces, and thus a heat loss or danger of burn generated due to opening and closing the main door when only the individual cooking space is used may be prevented.

Abstract: The present invention relates to a method for preparing cerium carbonate that can improve yield and productivity of cerium carbonate, cerium carbonate powder, and a method for preparing cerium oxide using the same. The method for preparing cerium carbonate comprises the steps of mixing a cerium precursor and urea; and, elevating the temperature of the mixture to 50˜250° C. under solvent free condition to react the cerium precursor and urea.

Abstract: The present invention relates to a method for preparing cerium carbonate that can improve yield and productivity of cerium carbonate, cerium carbonate powder, and a method for preparing cerium oxide using the same. The method for preparing cerium carbonate comprises the steps of mixing a cerium precursor and urea; and, elevating the temperature of the mixture to 50˜250° C. under solvent free condition to react the cerium precursor and urea.

Abstract: Disclosed is an organic electroluminescent polymer represented by the following Formula 1: 1