Abstract: Disclosed herein is a method for producing a solid-state imaging element which has pixels, each including a sensor section that performs photoelectric conversion and a charge transfer section that transfers charges generated by the sensor section. The method includes: forming an impurity region of the first conduction type and a second impurity region of the second conduction type on the impurity region of the first conduction type by ion implantation by using the same mask; forming on the surface of the semiconductor substrate a transfer gate constituting the charge transfer section which extends over the second impurity region of the second conduction type; forming a charge accumulating region of the first conduction type constituting the sensor section by ion implantation; and forming a first impurity region of the second conduction type, which has a higher impurity concentration than the second impurity region of the second conduction type, by ion implantation.

Abstract: Disclosed herein is a solid-state image pickup device of a type wherein a pixel is configured to include a sensor unit capable of photoelectric conversion, the image pickup device including: a semiconductor substrate; a charge storage region of a first conduction type, which is formed in the semiconductor substrate and constitutes a sensor unit; a charge storage sub-region made of an impurity region of the first conduction type, which is formed, in plural layers, in the semiconductor substrate below the charge storage region serving as a main charge storage region and wherein at least one or more of the plural layers are formed entirely across a pixel; and a device isolation region that is formed in the semiconductor substrate, isolates pixels from one another, and is made of an impurity region of a second conduction type.

Abstract: A solid-state imaging device includes: photodiodes formed for pixels arranged on a light sensing surface of a semiconductor substrate; a signal reading unit formed on the semiconductor substrate to read a signal charge or a voltage; an insulating film formed on the semiconductor substrate and including optical waveguides; color filters formed on the insulating film; and on-chip lenses formed on the color filters. The first and second pixel combinations are alternately arranged both in the horizontal and vertical directions, the first pixel combination having a layout in which two green pixels are arranged both in the horizontal and vertical directions and a total of four pixels are arranged, the second pixel combination having a layout in which two pixels are arranged both in the horizontal and vertical directions, a total of four pixels are arranged, and two red pixels and two blue pixels are arranged cater cornered.

Abstract: A solid-state imaging device includes: photodiodes formed for pixels arranged on a light sensing surface of a semiconductor substrate; a signal reading unit formed on the semiconductor substrate to read a signal charge or a voltage; an insulating film formed on the semiconductor substrate and including optical waveguides; color filters formed on the insulating film; and on-chip lenses formed on the color filters. The first and second pixel combinations are alternately arranged both in the horizontal and vertical directions, the first pixel combination having a layout in which two green pixels are arranged both in the horizontal and vertical directions and a total of four pixels are arranged, the second pixel combination having a layout in which two pixels are arranged both in the horizontal and vertical directions, a total of four pixels are arranged, and two red pixels and two blue pixels are arranged cater cornered.

Abstract: In an image data processing device, a selection unit receives a block of original image data of a current image, a block of compressed and reconstructed image data of the current image, and a block of compressed and reconstructed data of a previous image that precedes the current image. A comparison unit compares the block of compressed and reconstructed image data of the current image with the block of compressed and reconstructed data of the previous image. An output unit, in the event that the comparison of the comparison unit results in a match, outputs the block of original image data of the current image as first output data, and, in the event that the comparison of the comparison unit does not result in a match, outputs the block of compressed and reconstructed data of the previous image as the first output data.

Abstract: A solid-state imaging apparatus includes a transfer gate electrode formed on a semiconductor substrate; a photoelectric conversion unit including an electric charge storage area that is formed from a surface side of the semiconductor substrate in a depth direction, a transfer auxiliary area formed of a second conductive type impurity area that is formed in such a manner as to partially overlap the transfer gate electrode, and a dark current suppression area that is a first dark current suppression area formed in an upper layer of the transfer auxiliary and formed so as to have positional alignment in such a manner that the end portion of the transfer auxiliary area on the transfer gate electrode side is at the same position as the end portion of the transfer auxiliary area; and a signal processing circuit configured to process an output signal output from the solid-state imaging apparatus.

Abstract: Disclosed herein is a solid-state image pickup device of a type wherein a pixel is configured to include a sensor unit capable of photoelectric conversion, the image pickup device including: a semiconductor substrate; a charge storage region of a first conduction type, which is formed in the semiconductor substrate and constitutes a sensor unit; a charge storage sub-region made of an impurity region of the first conduction type, which is formed, in plural layers, in the semiconductor substrate below the charge storage region serving as a main charge storage region and wherein at least one or more of the plural layers are formed entirely across a pixel; and a device isolation region that is formed in the semiconductor substrate, isolates pixels from one another, and is made of an impurity region of a second conduction type.

Abstract: Disclosed herein is a method for producing a solid-state imaging element which has pixels, each including a sensor section that performs photoelectric conversion and a charge transfer section that transfers charges generated by the sensor section. The method includes: forming an impurity region of the first conduction type and a second impurity region of the second conduction type on the impurity region of the first conduction type by ion implantation by using the same mask; forming on the surface of the semiconductor substrate a transfer gate constituting the charge transfer section which extends over the second impurity region of the second conduction type; forming a charge accumulating region of the first conduction type constituting the sensor section by ion implantation; and forming a first impurity region of the second conduction type, which has a higher impurity concentration than the second impurity region of the second conduction type, by ion implantation.

Abstract: In an image data processing device, a selection unit receives a block of original image data of a current image, a block of compressed and reconstructed image data of the current image, and a block of compressed and reconstructed data of a previous image that precedes the current image. A comparison unit compares the block of compressed and reconstructed image data of the current image with the block of compressed and reconstructed data of the previous image. An output unit, in the event that the comparison of the comparison unit results in a match, outputs the block of original image data of the current image as first output data, and, in the event that the comparison of the comparison unit does not result in a match, outputs the block of compressed and reconstructed data of the previous image as the first output data.

Abstract: A solid-state imaging device includes: photodiodes formed for pixels arranged on a light sensing surface of a semiconductor substrate; a signal reading unit formed on the semiconductor substrate to read a signal charge or a voltage; an insulating film formed on the semiconductor substrate and including optical waveguides; color filters formed on the insulating film; and on-chip lenses formed on the color filters. The first and second pixel combinations are alternately arranged both in the horizontal and vertical directions, the first pixel combination having a layout in which two green pixels are arranged both in the horizontal and vertical directions and a total of four pixels are arranged, the second pixel combination having a layout in which two pixels are arranged both in the horizontal and vertical directions, a total of four pixels are arranged, and two red pixels and two blue pixels are arranged cater cornered.

Abstract: An imaging device includes: first green pixels; and second green pixels adjacent to the respective first green pixels in a first direction, which is the direction in which electric charge accumulated in the pixels is read, wherein the dimension of the first and second green pixels in a second direction perpendicular to the first direction is twice the dimension of the first and second green pixels in the first direction.

Abstract: A microcomputer is provided with an upper clip circuit for comparing digital values output from an analog-to-digital (AD) converting circuit 1 with a high level reference value A, and replacing a digital value larger than the reference value A with the reference value A; and a lower clip circuit for comparing digital values output from the upper clip circuit with a reference value B, and replacing a digital value smaller than the reference value B with the reference value B. Irregular signal waveforms can be removed by replacing the reference values A, B, thereby enhancing the reliability of operation results.

Abstract: A microcomputer is provided with an upper clip circuit for comparing digital values output from an AD converting circuit 1 with a high level reference value A, and replacing a digital value larger than the reference value A with the reference value A; and a lower clip circuit for comparing digital values output from the upper clip circuit with a reference value B, and replacing a digital value smaller than the reference value B with the reference value B. Irregular signal waveforms can be removed by replacing with the reference values A, B, thereby enhancing the reliability of operation results.