Abstract: A semiconductor device includes a command pulse generation circuit configured to generate a first command pulse in synchronization with a frequency division clock and to generate a second command pulse in synchronization with an inverted frequency division clock, based on a test write command. The semiconductor device also includes an alignment data generation circuit configured to align first internal data in an in-phase manner to generate first alignment data, based on the first command pulse, and to align second internal data in an out-of-phase manner to generate second alignment data, based on the second command pulse. The semiconductor device further includes a phase detection circuit configured to determine synchronization states of a clock and the frequency division clock, based on the first alignment data and the second alignment data.

Abstract: A semiconductor system according to an embodiment of the present disclosure includes a controller configured to output a command address, a first chip selection signal, and a second chip selection signal, and a semiconductor device, including a first rank and a second rank, configured to receive the command address, the first chip selection signal, and the second chip selection signal and configured to calibrate each termination resistance value based on the command address, the first chip selection signal, and the second chip selection signal. The first rank calibrates the termination resistance value of the first rank to a target resistance value based on the command address and the first chip selection signal when a write operation on the first rank is performed, and the first rank calibrates the termination resistance value of the first rank to a dynamic resistance value based on the second chip selection signal when a write operation on the second rank is performed.

Abstract: A semiconductor system includes a controller configured to apply a command address, a first chip selection signal, and a second chip selection signal, and a semiconductor device including a first rank and a second rank configured to calibrate each termination resistance, based on the command address, the first chip selection signal, and the second chip selection signal.

Abstract: A semiconductor system includes a controller configured to transmit a command address and a plurality of read strobe signals, and a semiconductor device including a first rank and a second rank that are configured to receive the command address and the plurality of read strobe signals and to perform a write operation and a read operation based on the command address. In the semiconductor device, the first rank is configured to calibrate a termination resistance value of the first rank to a target resistance value when a write operation for the first rank is performed. In the semiconductor device, the first rank is configured to calibrate the termination resistance value of the first rank to a dynamic resistance value based on the plurality of read strobe signals when a write operation for the second rank is performed.

Abstract: A memory device includes a first data strobe pad; a strobe signal generation circuit suitable for generating a read data strobe signal based on a read timing signal; a monitoring receiver suitable for receiving the read data strobe signal fed back through the first data strobe pad according to a monitoring enable signal; a sampler suitable for generating a sampling clock by sampling the fed back read data strobe signal according to a random clock; a first counter suitable for generating a first counting signal by counting the random clock; a second counter suitable for generating a second counting signal by counting the sampling clock; and a duty detector suitable for generating a duty ratio detection signal based on the first counting signal and the second counting signal.

Abstract: A memory system includes a memory controller and a memory device. The memory controller accesses the memory device by providing a system clock signal, a data clock signal, and a chip selection signal and provides a data clock enable signal to the memory device after the access to the memory device. The memory device communicates with the memory controller based on the system clock signal, the data clock signal, and the data clock enable signal.

Abstract: A memory device includes a data pad; a read circuit outputting read or test data to the data pad according to a read timing signal and a read command; a write circuit receiving write data through the data pad according to a write timing signal; a test register circuit performing a preset operation on data and storing the data, and transferring the stored data as the test data in response to the read command, during a first test mode; a data compression circuit generating a test output signal by compressing the test data and outputting the test output signal to a first test output pad, during the first test mode; and a timing control circuit generating, according to first to third output control signals, the read timing signal and generating the write timing signal by delaying the read timing signal, during the first test mode.

Abstract: A memory device includes a data pad; a read circuit outputting read or test data to the data pad according to a read timing signal and a read command; a write circuit receiving write data through the data pad according to a write timing signal; a test register circuit performing a preset operation on data and storing the data, and transferring the stored data as the test data in response to the read command, during a first test mode; a data compression circuit generating a test output signal by compressing the test data and outputting the test output signal to a first test output pad, during the first test mode; and a timing control circuit generating, according to first to third output control signals, the read timing signal and generating the write timing signal by delaying the read timing signal, during the first test mode.

Abstract: A semiconductor device includes a selection input circuit and a core data generation circuit. The selection input circuit is configured to generate selection data, a selection parity, and a selection data control signal from data, a parity, and a data control signal during a write operation and sets the selection data, the selection parity, and the selection data control signal to a predetermined logic level during a pattern write operation. The core data generation circuit is configured to receive drive data, a drive parity, and a drive data control signal driven by the selection data, the selection parity, and the selection data control signal to generate core data which are stored into a memory core according to whether an error correction operation and a data inversion operation is performed.

Abstract: A semiconductor device includes a selection input circuit and a core data generation circuit. The selection input circuit is configured to generate selection data, a selection parity, and a selection data control signal from data, a parity, and a data control signal during a write operation and sets the selection data, the selection parity, and the selection data control signal to a predetermined logic level during a pattern write operation. The core data generation circuit is configured to receive drive data, a drive parity, and a drive data control signal driven by the selection data, the selection parity, and the selection data control signal to generate core data which are stored into a memory core according to whether an error correction operation and a data inversion operation is performed.

Abstract: A memory device includes a first data strobe pad; a strobe signal generation circuit suitable for generating a read data strobe signal based on a read timing signal; a monitoring receiver suitable for receiving the read data strobe signal fed back through the first data strobe pad according to a monitoring enable signal; a sampler suitable for generating a sampling clock by sampling the fed back read data strobe signal according to a random clock; a first counter suitable for generating a first counting signal by counting the random clock; a second counter suitable for generating a second counting signal by counting the sampling clock; and a duty detector suitable for generating a duty ratio detection signal based on the first counting signal and the second counting signal.

Abstract: A semiconductor system includes a semiconductor device and a controller. The semiconductor device includes a first memory rank and is configured to perform, in response to receiving a first write command, a first write operation of writing first data to the first memory rank. The semiconductor device includes a second memory rank and is configured to perform, in response to receiving a second write command, a second write operation of writing second data to the second memory rank. The controller is configured to receive at least one write request and responsively generate the first and second write commands separated in time so that a transition time interval between generation of the first write command and generation of the second write command is based on the second memory rank being different from the first memory rank and based on a comparison of a write preamble period to a write post-amble period.

Abstract: A semiconductor device includes a selection input circuit and a core data generation circuit. The selection input circuit is configured to generate selection data, a selection parity, and a selection data control signal from data, a parity, and a data control signal during a write operation and sets the selection data, the selection parity, and the selection data control signal to a predetermined logic level during a pattern write operation. The core data generation circuit is configured to receive drive data, a drive parity, and a drive data control signal driven by the selection data, the selection parity, and the selection data control signal to generate core data which are stored into a memory core according to whether an error correction operation and a data inversion operation is performed.

Abstract: A semiconductor device includes a power gating control block and a power gating circuit. The power gating control block activates a data power control signal during a period that is set by a target code, the period being from a point in time in which the semiconductor device enters a read mode or a write mode. In addition, the power gating control block deactivates an operation power control signal in a power-down mode. The power gating circuit inhibits a data power signal from being supplied to a data input/output block based on the data power control signal. Moreover, the power gating control block inhibits an operation power signal from being supplied to an internal operation control block based on the operation power control signal.

Abstract: A semiconductor device includes a read control circuit configured to generate first and second output control signals including pulses which are selectively generated, from first and second strobe signals depending on burst information; and a data output circuit configured to latch first internal data depending on the pulse of the first output control signal, transfer second internal data at a time when the second output control signal level-transitions, and generate output data from the latched first internal data and the transferred second internal data.

Abstract: A semiconductor device includes a read control circuit configured to generate first and second output control signals including pulses which are selectively generated, from first and second strobe signals depending on burst information; and a data output circuit configured to latch first internal data depending on the pulse of the first output control signal, transfer second internal data at a time when the second output control signal level-transitions, and generate output data from the latched first internal data and the transferred second internal data.

Abstract: In one embodiment, a touch sensor includes a first electrode, a second electrode, and a spacer layer located between the first electrode and the second electrode. One of the first electrode and the second electrode is a drive electrode to which a drive signal is applied. The other one of the first electrode and the second electrode is a receiving electrode that receives the drive signal by a mutual capacitance between the first electrode and the second electrode. When an external pressure is applied to the first electrode through a display, the first electrode is concavely bent toward the second electrode. The mutual capacitance between the first electrode and the second electrode changes according to a distance between the first electrode and the second electrode. The magnitude of the external pressure according to the change of the capacitance between the first electrode and the second electrode is detected.

Abstract: A semiconductor apparatus may include a logic circuit and a power control circuit. The logic circuit operates by being supplied with power through a power line. The power control circuit includes a plurality of power switches, and supplies a first power supply voltage and a second power supply voltage to the power line. When a mode of the semiconductor apparatus is changed, the power control circuit causes the plurality of power switches to sequentially stop supplying one of the first power supply voltage and the second power supply voltage to the power line, and then causes the plurality of power switches to sequentially supply the other of the first power supply voltage and the second power supply voltage to the power line.

Abstract: A touch input device which includes a display module and is capable of detecting a pressure may be provided. The touch input device includes: a display module including a flat portion and at least one curved portion which extends from the flat portion and is curved with a predetermined curvature; and a pressure detection module which is formed under the display module and detects a touch pressure applied to a surface of the display module. The pressure detection module detects the touch pressure on the basis of a capacitance change amount according to a distance change between a reference potential layer and the pressure detection module. As a result, the touch input device including various types and forms of the display modules is capable of efficiently detecting the touch position and touch pressure.

Abstract: A touch input device capable of detecting a pressure of a touch on a touch surface may be provided. The touch input device includes: a display module; and a pressure sensor which is disposed at a position where a distance between the pressure sensor and a reference potential layer is changeable according to the touch on the touch surface. The distance is changeable according to a pressure magnitude of the touch. The pressure sensor outputs a signal including information on a capacitance which is changed according to the distance. The pressure sensor includes a plurality of electrodes to form a plurality of channels. The pressure magnitude of the touch is detected on the basis of a change amount of the capacitance detected in each of the channels and an SNR improvement scaling factor assigned to each of the channels.