Patents by Inventor Sangwook Kim

Sangwook Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170083494
    Abstract: The present disclosure provides an electronic device and methods for operating the electronic device. The electronic device may include: a housing having a coupling member removably attachable to an ear of a user; one or more microphones provided within the housing and configured to detect an external sound; at least one speaker provided within the housing; at least one communication circuit within the housing; a processor provided within the housing and electrically coupled to the one or more microphones, the at least one speaker, and the at least one communication circuit; and at least one memory provided within the housing, and electrically coupled to the processor.
    Type: Application
    Filed: September 13, 2016
    Publication date: March 23, 2017
    Inventors: Sangwook KIM, Hyunseok SHIN, Seungnyun KIM, Yongsang YUN, Changryong HEO
  • Publication number: 20170075654
    Abstract: According to one embodiment of the present disclosure, an electronic device may include a housing including a portion configured to detachably couple with a part of a user's ear, a sensor installed on an outer surface of the housing or in the housing, a communication circuit installed on the outer surface of the housing or in the housing, a speaker installed on the outer surface of the housing, exposed toward an eardrum of the ear, and electrically connected to the communication circuit, a processor electronically connected to the sensor, the communication circuit, and the speaker, and a memory electrically connected to the processor.
    Type: Application
    Filed: September 16, 2016
    Publication date: March 16, 2017
    Inventors: Hyunseok Shin, Yongsang Yun, Sangwook Kim, Seungnyun Kim, Eunsuk Kwon, Changryong Heo
  • Patent number: 9530639
    Abstract: A method of preparing a ZnO nanowire, and a ZnO nanowire prepared by the method are provided. The method of preparing a ZnO nanowire includes: preparing a zinc chalcogenide solution by dissolving zinc chalcogenide in a solvent; applying the zinc chalcogenide solution onto a substrate; drying the zinc chalcogenide solution applied onto the substrate; and annealing the substrate in the presence of oxygen after the drying the zinc chalcogenide solution.
    Type: Grant
    Filed: November 10, 2014
    Date of Patent: December 27, 2016
    Assignees: SAMSUNG ELECTRONICS CO., LTD., AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Kyunghoon Cho, Sangwook Kim, Donghyeok Choi
  • Publication number: 20160306524
    Abstract: The present invention relates to a mobile terminal adapted to guide a plurality of functions, performable on the current screen, to a front display unit in accordance with user interaction on a rear surface input unit, and relates to a method for operating the rear surface input unit of same, and the present invention comprises the steps of: displaying content on the front display unit; detecting a first input on the rear surface input unit; displaying, through a guide unit, at least one function performable on the current screen on the front display unit on the basis of the type of first input detected; and performing the function in accordance with a second input on the rear surface input unit.
    Type: Application
    Filed: November 26, 2014
    Publication date: October 20, 2016
    Applicant: LG ELECTRONICS INC.
    Inventors: Jiyoung PARK, Jaeho CHOI, Sujin KIM, Sunghye YOON, Jumin CHI, Sukhoon NOH, Younghoon KIM, Kyungjik LEE, Sangwook KIM
  • Publication number: 20160110103
    Abstract: A method of operating a data processing system includes transmitting process information indicating that a first process is classified as a critical process or a non-critical process to a kernel area, wherein the process information is generated in an application area, and the application area and the kernel area define a host. When the first process is classified as a critical process based on the process information, a first fastpath write signal is provided, using the kernel area, to a memory system to perform a fastpath write operation of first data for performing the first process. When the first process is classified as a non-critical process, a first slowpath write signal is provided to the memory system to perform a slowpath write operation of the first data. The fastpath write operation has a higher write speed than the slowpath write operation.
    Type: Application
    Filed: July 6, 2015
    Publication date: April 21, 2016
    Applicant: RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
    Inventors: SUNG-WON JEONG, SANGWOOK KIM, JOONWON LEE, JINKYU JEONG, HWANJU KIM
  • Publication number: 20160016160
    Abstract: An anion exchange method using an anion exchange precursor based on a metal-chalcogenide compound is provided. The anion exchange method includes exchanging an anionic element of a nanoparticle with an element X of an anion exchange precursor represented by Na2Xn via a reaction between the anion exchange precursor and the nanoparticle in the presence of a reaction medium, wherein X is at least one element selected from the group consisting of Se, S, and Te, and n is an integer from 2 to 10.
    Type: Application
    Filed: July 17, 2015
    Publication date: January 21, 2016
    Applicants: SAMSUNG ELECTRONICS CO., LTD., AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Kyungsang CHO, Sangwook KIM, Donghyeok CHOI
  • Publication number: 20150279669
    Abstract: A method of preparing a ZnO nanowire, and a ZnO nanowire prepared by the method are provided. The method of preparing a ZnO nanowire includes: preparing a zinc chalcogenide solution by dissolving zinc chalcogenide in a solvent; applying the zinc chalcogenide solution onto a substrate; drying the zinc chalcogenide solution applied onto the substrate; and annealing the substrate in the presence of oxygen after the drying the zinc chalcogenide solution.
    Type: Application
    Filed: November 10, 2014
    Publication date: October 1, 2015
    Applicants: SAMSUNG ELECTRONICS CO., LTD., AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Kyunghoon CHO, Sangwook KIM, Donghyeok CHOI
  • Publication number: 20150243402
    Abstract: A nanoparticle multilayer thin film is provided in which nanoparticles which are not electrically insulated from each other are spaced apart from one another at a reduced distance. The nanoparticle multilayer film includes: at least one first nanoparticle layer including first nanoparticles that are surface-modified with a cationic metal-chalcogenide compound; and at least one second nanoparticle layer including second nanoparticles that are surface-modified with an anionic metal-chalcogenide compound, wherein the first nanoparticle layer and the second nanoparticle layer are alternately stacked upon one another.
    Type: Application
    Filed: December 1, 2014
    Publication date: August 27, 2015
    Applicants: SAMSUNG ELECTRONICS CO., LTD., AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Kyungsang CHO, Sangwook KIM, Donghyeok CHOI
  • Publication number: 20150169425
    Abstract: A method of operating an electronic device is provided. The method includes recognizing a number of connection components provided in the electronic device, storing count data corresponding to the recognized number of the connection components in a memory of the electronic device, acquiring the count data from the memory, and displaying application information corresponding to the acquired count data through a display connected to the electronic device.
    Type: Application
    Filed: November 4, 2014
    Publication date: June 18, 2015
    Inventors: Sangwook KIM, Sohmann KIM, Youngkou HAN
  • Patent number: 8744088
    Abstract: A decoding method, medium, and device decoding an input signal, including compressed multi-channel signals as a mono or stereo signal, into 2-channel binaural signals. A full band channel level of each channel in the multi-channel system is calculated from channel level differences between the channels, and data of each channel included in the input signal is localized in directions corresponding to the channels based on the calculated full band channel levels of the channels. Accordingly, the input signal can be output as the 2-channel binaural signals by using simple operations without having to reconstruct multi-channel signals from the input signal in a quadrature mirror filter (QMF) domain.
    Type: Grant
    Filed: February 20, 2007
    Date of Patent: June 3, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sangchul Ko, Youngtae Kim, Sangwook Kim, Jungho Kim
  • Patent number: 8429571
    Abstract: Provided is an etch proximity correction method in which an accurate etch bias value is calculated. The etch proximity correction method includes creating an etch bias value from a project area corresponding to an area blocked by a pattern region within a linear distance projected from a target position selected in a target layout to an outermost portion of the proximity region and a non-project area corresponding to an area projected into an edge linear distance from an edge of the pattern region blocked in the linear distance to the outermost portion of the proximity region and correcting the target position in the layout using the etch bias value. Since an etch bias model includes the project area and the non-project area, the accurate etch bias value may be calculated.
    Type: Grant
    Filed: June 16, 2011
    Date of Patent: April 23, 2013
    Assignee: Samsung Electronics Co., Ltd
    Inventor: Sangwook Kim
  • Patent number: 8271267
    Abstract: Provided are a scalable wide-band speech coding/decoding apparatus, method, and medium. An input wide-band speech input signal is first divided into a low-band signal and a high-band signal. The divided low-band signal is then coded using a code excited linear prediction (CELP) method. The divided high-band signal is coded using a harmonic method. A signal representing a difference between a synthetic signal obtained from the low-band and the high band, and a signal input to the low-band and the high-band is then coded using a modified discrete cosine transform (MDCT) method. The coded signal is then multiplexed. The multiplexed signal is then output. Accordingly, high quality speech can be achieved for all layers.
    Type: Grant
    Filed: July 21, 2006
    Date of Patent: September 18, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hosang Sung, Sangwook Kim, Rakesh Taori, Kangeun Lee
  • Patent number: 8242504
    Abstract: An oxide semiconductor and a thin film transistor (TFT) including the same. The oxide semiconductor may be obtained by adding hafnium (Hf) to gallium-indium-zinc oxide (GIZO) and may be used as a channel material of the TFT.
    Type: Grant
    Filed: May 28, 2009
    Date of Patent: August 14, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Changjung Kim, Sangwook Kim, Sunil Kim
  • Patent number: 8227149
    Abstract: Methods of forming masks. According to the methods, a target pattern is set. Generation of a side lobe caused by the target pattern is verified. A preliminary target pattern and a preliminary side lobe pattern are set, in the target pattern and a region where the side lobe is generated, respectively. An interference pattern map using the preliminary target pattern and the preliminary side lobe pattern is created. At least one of regions having a phase identical or opposite to that of a position of the preliminary target pattern in the interference pattern map is set to an interference auxiliary pattern. A mask using the interference auxiliary pattern and the target pattern is formed.
    Type: Grant
    Filed: February 18, 2010
    Date of Patent: July 24, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: YongJin Chun, Soohan Choi, Sangwook Kim, Seongwoon Choi, Sukjoo Lee, Sungwoo Lee, Youngchang Kim, SungSoo Suh, Jin-sun Choi
  • Patent number: 8217680
    Abstract: A method of operating inverter may include providing a load transistor and a driving transistor connected to the load transistor wherein at least one of the load transistor and the driving transistor has a double gate structure, and varying a threshold voltage of the at least one of the load transistor and the driving transistor having the double gate structure. A threshold voltage of the load transistor or the driving transistor may be adjusted by the double gate structure, and accordingly, the inverter may be an enhancement/depletion (E/D) mode inverter.
    Type: Grant
    Filed: March 29, 2011
    Date of Patent: July 10, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sangwook Kim, Ihun Song, Changjung Kim, Jaechul Park, Sunil Kim
  • Patent number: 8149927
    Abstract: A method of encoding/decoding a digital signal using linear quantization by sections, and an apparatus for the same are provided. The method of encoding includes: converting a digital input signal, and removing redundant information from the digital signal; allocating a number of bits allocated to each predetermined quantized unit considering the importance of the digital signal; dividing the distribution of signal values into predetermined sections based on the predetermined quantized units, and linear quantizing data converted pin the operation of converting the digital input signal by sections; and generating a bit stream from the linear quantized data and predetermined side information. Therefore, a sound quality is improved compared to a sound quality produced by conventional linear quantizing devices and a complexity of a non-linear quantizing device is reduced.
    Type: Grant
    Filed: June 2, 2010
    Date of Patent: April 3, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Junghoe Kim, Dohyung Kim, Shihwa Lee, Sangwook Kim
  • Patent number: 8120587
    Abstract: Provided is a touch panel using a zinc oxide (ZnO) nano wire. The touch panel may include a first transparent substrate, a first transparent electrode layer on the first transparent substrate, a light transmissive nano wire layer including a plurality of piezoelectric nano wires that may be arranged on the first transparent electrode layer so as to be perpendicular to the first transparent electrode layer, a second transparent electrode layer on the nano wire layer, and a second transparent substrate on the second transparent electrode layer.
    Type: Grant
    Filed: November 7, 2008
    Date of Patent: February 21, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sangwook Kim, Youngsoo Park, Changjung Kim
  • Patent number: 8099587
    Abstract: An arrangement is provided for compressing microcode ROM (“uROM”) in a processor and for efficiently accessing a compressed “uROM”. A clustering-based approach may be used to effectively compress a uROM. The approach groups similar columns of microcode into different clusters and identifies unique patterns within each cluster. Only unique patterns identified in each cluster are stored in a pattern storage. Indices, which help map an address of a microcode word (“uOP”) to be fetched from a uROM to unique patterns required for the uOP, may be stored in an index storage. Typically it takes a longer time to fetch a uOP from a compressed uROM than from an uncompressed uROM. The compressed uROM may be so designed that the process of fetching a uOP (or uOPs) from a compressed uROM may be fully-pipelined to reduce the access latency.
    Type: Grant
    Filed: July 20, 2005
    Date of Patent: January 17, 2012
    Assignee: Intel Corporation
    Inventors: Youfeng Wu, Sangwook Kim, Mauricio Breternitz, Jr., Herbert Hum
  • Publication number: 20110314431
    Abstract: Provided is an etch proximity correction method in which an accurate etch bias value is calculated. The etch proximity correction method includes creating an etch bias value from a project area corresponding to an area blocked by a pattern region within a linear distance projected from a target position selected in a target layout to an outermost portion of the proximity region and a non-project area corresponding to an area projected into an edge linear distance from an edge of the pattern region blocked in the linear distance to the outermost portion of the proximity region and correcting the target position in the layout using the etch bias value. Since an etch bias model includes the project area and the non-project area, the accurate etch bias value may be calculated.
    Type: Application
    Filed: June 16, 2011
    Publication date: December 22, 2011
    Applicant: Samsung Electronics Co., Ltd
    Inventor: Sangwook KIM
  • Patent number: 8069048
    Abstract: Provided is a scalable encoding method, apparatus, and medium. The method includes: encoding a base layer and encoding a first enhancement layer and a second enhancement layer in a frame having the base layer; and generating an encoded frame by synthesizing the encoded results. Accordingly, only if the loss of the encoding frame is not as great as the encoded first enhancement layer is damaged, a case where speech restoration with respect to partial frequency bands must be given up does not occur. Furthermore, since an encoder divides the second enhancement layer into a plurality of layers in a horizontal or vertical direction, considering a distribution pattern of data belonging to the second enhancement layer and first encodes a layer in which lots of data are distributed among the divided layers, loss of audio information can be minimized even if a portion of the encoded second enhancement layer is damaged.
    Type: Grant
    Filed: September 28, 2006
    Date of Patent: November 29, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dohyung Kim, Miyoung Kim, Shihwa Lee, Sangwook Kim