Patents by Inventor Sanjay C. Mehta

Sanjay C. Mehta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7335980
    Abstract: The present invention provides a hardmask that is located on a surface of a low k dielectric material having at least one conductive feature embedded therein. The hardmask includes a lower region of a hermetic oxide material located adjacent to the low k dielectric material and an upper region comprising atoms of Si, C and H located above the hermetic oxide material. The present invention also provides a method of fabricating the inventive hardmask as well as a method to form an interconnect structure containing the same.
    Type: Grant
    Filed: November 4, 2004
    Date of Patent: February 26, 2008
    Assignee: International Business Machines Corporation
    Inventors: Son Van Nguyen, Michael Lane, Stephen M. Gates, Xiao H. Liu, Vincent J. McGahay, Sanjay C. Mehta, Thomas M. Shaw
  • Patent number: 7294565
    Abstract: A method for sealing an exposed surface of a wire bond pad with a material that is capable of preventing a possible chemical attack during electroless deposition of Ni/Au pad metallurgy is provided. Specifically, the present invention provides a method whereby a TiN/Ti or TiN/Al cap is used as a protective coating covering exposed surfaces of a wire bond pad. The TiN/Ti or TiN/Al cap is not affected by alkaline chemistries used in forming the Ni/Au metallization, yet it provides a sufficient electrical pathway connecting the bond pads to the Ni/Au pad metallization.
    Type: Grant
    Filed: October 1, 2003
    Date of Patent: November 13, 2007
    Assignee: International Business Machines Corporation
    Inventors: Lloyd G. Burrell, Charles R. Davis, Ronald D. Goldblatt, William F. Landers, Sanjay C. Mehta
  • Patent number: 7253105
    Abstract: The present invention relates to methods of improving the fabrication of interconnect structures of the single or dual damascene type, in which there is no problem of hard mask retention or of conductivity between the metal lines after fabrication. The methods of the present invention include at least steps of chemical mechanical polishing and UV exposure or chemical repair treatment which steps improve the reliability of the interconnect structure formed. The present invention also relates to an interconnect structure which include a porous ultra low k dielectric of the SiCOH type in which the surface layer thereof has been modified so as to form a gradient layer that has both a density gradient and a C content gradient.
    Type: Grant
    Filed: February 22, 2005
    Date of Patent: August 7, 2007
    Assignee: International Business Machines Corporation
    Inventors: Christos D. Dimitrakopoulos, Stephen M. Gates, Vincent J. McGahay, Sanjay C. Mehta