Patents by Inventor Sanjay Mehrotra
Sanjay Mehrotra has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20040130566Abstract: A method and system is described for the generation of meta-slides which can be used for 3D presentations and documentation. Meta-slides represent an organizing principle suitable for 3D virtual reality and multimedia (i.e. video, audio, text and images) content creation. Multiple avatars, actors, objects, text and slides are assembled in a meta-slide performing actions synchronously or asynchronously. The meta-slides and scenes are edited on a time line. The user can interact and dynamically update the content of the presentation during the content playback in the playback window. The playback window and meta-slides can become part of an internet browser or remain standalone.Type: ApplicationFiled: June 6, 2003Publication date: July 8, 2004Inventors: Prashant Banerjee, Sanjay Mehrotra, Craig Barnes
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Patent number: 6757842Abstract: A system of Flash EEprom memory chips with controlling circuits serves as non-volatile memory such as that provided by magnetic disk drives. Improvements include selective multiple sector erase, in which any combinations of Flash sectors may be erased together. Selective sectors among the selected combination may also be de-selected during the erase operation. Another improvement is the ability to remap and replace defective cells with substitute cells. The remapping is performed automatically as soon as a defective cell is detected. When the number of defects in a Flash sector becomes large, the whole sector is remapped. Yet another improvement is the use of a write cache to reduce the number of writes to the Flash EEprom memory, thereby minimizing the stress to the device from undergoing too many write/erase cycling.Type: GrantFiled: September 6, 2002Date of Patent: June 29, 2004Assignee: SanDisk CorporationInventors: Eliyahou Harari, Robert D. Norman, Sanjay Mehrotra
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Publication number: 20040080988Abstract: A system of Flash EEprom memory chips with controlling circuits serves as non-volatile memory such as that provided by magnetic disk drives. Improvements include selective multiple sector erase, in which any combinations of Flash sectors may be erased together. Selective sectors among the selected combination may also be de-selected during the erase operation. Another improvement is the ability to remap and replace defective cells with substitute cells. The remapping is performed automatically as soon as a defective cell is detected. When the number of defects in a Flash sector becomes large, the whole sector is remapped. Yet another improvement is the use of a write cache to reduce the number of writes to the Flash EEprom memory, thereby minimizing the stress to the device from undergoing too many write/erase cycling.Type: ApplicationFiled: January 11, 2001Publication date: April 29, 2004Applicant: SanDisk CorporationInventors: Eliyahou Harari, Robert D. Norman, Sanjay Mehrotra
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Patent number: 6715044Abstract: A memory system includes an array of solidstate memory devices which are in communication with and under the control of a controller module via a device bus with very few lines. This forms an integrated-circuit mass storage system which is contemplated to replace a mass storage system such as a disk drive memory in a computer system. Command, address and data information are serialized into component strings and multiplexed before being transferred between the controller module and the array of memory devices. The serialized information are is accompanied by a control signal to help sort out the multiplexed components. Each memory device in the array is mounted on a multi-bit mount and assigned an array address by it an array mount. An A memory device is selected by an appropriate address broadcast over the device bus, without requiring the usual dedicated select signal. A reserved array particular mount multi-bit configuration is used to unconditionally select the device mounted thereon.Type: GrantFiled: August 22, 2001Date of Patent: March 30, 2004Assignees: SanDisk Corporation, Western Digital CorporationInventors: Karl M. J. Lofgren, Jeffrey Donald Stai, Anil Gupta, Robert D. Norman, Sanjay Mehrotra
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Patent number: 6684345Abstract: A system of Flash EEprom memory chips with controlling circuits serves as non-volatile memory such as that provided by magnetic disk drives. Improvements include selective multiple sector erase, in which any combinations of Flash sectors may be erased together. Selective sectors among the selected combination may also be de-selected during the erase operation. Another improvement is the ability to remap and replace defective cells with substitute cells. The remapping is performed automatically as soon as a defective cell is detected. When the number of defects in a Flash sector becomes large, the whole sector is remapped. Yet another improvement is the use of a write cache to reduce the number of writes to the Flash EEprom memory, thereby minimizing the stress to the device from undergoing too many write/erase cycling.Type: GrantFiled: December 26, 2002Date of Patent: January 27, 2004Assignee: SanDisk CorporationInventors: Eliyahou Harari, Robert D. Norman, Sanjay Mehrotra
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Publication number: 20030206449Abstract: A system of Flash EEprom memory chips with controlling circuits serves as non-volatile memory such as that provided by magnetic disk drives. Improvements include selective multiple sector erase, in which any combinations of Flash sectors may be erased together. Selective sectors among the selected combination may also be de-selected during the erase operation. Another improvement is the ability to remap and replace defective cells with substitute cells. The remapping is performed automatically as soon as a defective cell is detected. When the number of defects in a Flash sector becomes large, the whole sector is remapped. Yet another improvement is the use of a write cache to reduce the number of writes to the Flash EEprom memory, thereby minimizing the stress to the device from undergoing too many write/erase cycling.Type: ApplicationFiled: April 15, 2003Publication date: November 6, 2003Inventors: Eliyahou Harari, Robert D. Norman, Sanjay Mehrotra
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Publication number: 20030202377Abstract: A system of Flash EEprom memory chips with controlling circuits serves as non-volatile memory such as that provided by magnetic disk drives. Improvements include selective multiple sector erase, in which any combinations of Flash sectors may be erased together. Selective sectors among the selected combination may also be de-selected during the erase operation. Another improvement is the ability to remap and replace defective cells with substitute cells. The remapping is performed automatically as soon as a defective cell is detected. When the number of defects in a Flash sector becomes large, the whole sector is remapped. Yet another improvement is the use of a write cache to reduce the number of writes to the Flash EEprom memory, thereby minimizing the stress to the device from undergoing too many write/erase cycling.Type: ApplicationFiled: April 16, 2003Publication date: October 30, 2003Inventors: Eliyahou Harari, Robert D. Norman, Sanjay Mehrotra
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Publication number: 20030200380Abstract: An EEPROM system includes flash EEPROM cells organized into subarrays. Pairs of subarrays share row address decoders by sharing word lines, and individual subarrays have dedicated column address decoders and data registers. Each row decoder has an associated row address latch, and each column decoder has an associated column address latch. Multiple data chunks are concurrently written into the subarrays by first latching chunk addresses into the row and column address latches, and corresponding chunks of data into the data registers, then activating a programming signal to initiate concurrent programming and verifying the programming of the data chunks.Type: ApplicationFiled: May 27, 2003Publication date: October 23, 2003Inventors: Douglas J. Lee, Mehrdad Mofidi, Sanjay Mehrotra, Raul-Adrian Cernea
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Publication number: 20030128618Abstract: A system of Flash EEprom memory chips with controlling circuits serves as non-volatile memory such as that provided by magnetic disk drives. Improvements include selective multiple sector erase, in which any combinations of Flash sectors may be erased together. Selective sectors among the selected combination may also be de-selected during the erase operation. Another improvement is the ability to remap and replace defective cells with substitute cells. The remapping is performed automatically as soon as a defective cell is detected. When the number of defects in a Flash sector becomes large, the whole sector is remapped. Yet another improvement is the use of a write cache to reduce the number of writes to the Flash EEprom memory, thereby minimizing the stress to the device from undergoing too many write/erase cycling.Type: ApplicationFiled: December 26, 2002Publication date: July 10, 2003Inventors: Eliyahou Harari, Robert D. Norman, Sanjay Mehrotra
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Publication number: 20030110411Abstract: A system of Flash EEprom memory chips with controlling circuits serves as non-volatile memory such as that provided by magnetic disk drives. Improvements include selective multiple sector erase, in which any combinations of Flash sectors may be erased together. Selective sectors among the selected combination may also be de-selected during the erase operation. Another improvement is the ability to remap and replace defective cells with substitute cells. The remapping is performed automatically as soon as a defective cell is detected. When the number of defects in a Flash sector becomes large, the whole sector is remapped. Yet another improvement is the use of a write cache to reduce the number of writes to the Flash EEprom memory, thereby minimizing the stress to the device from undergoing too many write/erase cycling.Type: ApplicationFiled: January 21, 2003Publication date: June 12, 2003Inventors: Eliyahou Harari, Robert D. Norman, Sanjay Mehrotra
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Publication number: 20030097609Abstract: A system of Flash EEprom memory chips with controlling circuits serves as non-volatile memory such as that provided by magnetic disk drives. Improvements include selective multiple sector erase, in which any combinations of Flash sectors may be erased together. Selective sectors among the selected combination may also be de-selected during the erase operation. Another improvement is the ability to remap and replace defective cells with substitute cells. The remapping is performed automatically as soon as a defective cell is detected. When the number of defects in a Flash sector becomes large, the whole sector is remapped. Yet another improvement is the use of a write cache to reduce the number of writes to the Flash EEprom memory, thereby minimizing the stress to the device from undergoing too many write/erase cycling.Type: ApplicationFiled: December 26, 2002Publication date: May 22, 2003Inventors: Eliyahou Harari, Robert D. Norman, Sanjay Mehrotra
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Publication number: 20030093711Abstract: A system of Flash EEprom memory chips with controlling circuits serves as non-volatile memory such as that provided by magnetic disk drives. Improvements include selective multiple sector erase, in which any combinations of Flash sectors may be erased together. Selective sectors among the selected combination may also be de-selected during the erase operation. Another improvement is the ability to remap and replace defective cells with substitute cells. The remapping is performed automatically as soon as a defective cell is detected. When the number of defects in a Flash sector becomes large, the whole sector is remapped. Yet another improvement is the use of a write cache to reduce the number of writes to the Flash EEprom memory, thereby minimizing the stress to the device from undergoing too many write/erase cycling.Type: ApplicationFiled: December 24, 2002Publication date: May 15, 2003Inventors: Eliyahou Harari, Robert D. Norman, Sanjay Mehrotra
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Publication number: 20030090941Abstract: A system of Flash EEprom memory chips with controlling circuits serves as non-volatile memory such as that provided by magnetic disk drives. Improvements include selective multiple sector erase, in which any combinations of Flash sectors may be erased together. Selective sectors among the selected combination may also be de-selected during the erase operation. Another improvement is the ability to remap and replace defective cells with substitute cells. The remapping is performed automatically as soon as a defective cell is detected. When the number of defects in a Flash sector becomes large, the whole sector is remapped. Yet another improvement is the use of a write cache to reduce the number of writes to the Flash EEprom memory, thereby minimizing the stress to the device from undergoing too many write/erase cycling.Type: ApplicationFiled: November 7, 2002Publication date: May 15, 2003Inventors: Eliyahou Harari, Robert D. Norman, Sanjay Mehrotra
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Patent number: 6542956Abstract: An EEPROM system includes flash EEPROM cells organized into subarrays. Pairs of subarrays share row address decoders by sharing word lines, and individual subarrays have dedicated column address decoders and data registers. Each row decoder has an associated row address latch, and each column decoder has an associated column address latch. Multiple data chunks are concurrently written into the subarrays by first latching chunk addresses into the row and column address latches, and corresponding chunks of data into the data registers, then activating a programming signal to initiate concurrent programming and verifying the programming of the data chunks.Type: GrantFiled: August 21, 2000Date of Patent: April 1, 2003Assignee: SanDisk CorporationInventors: Douglas J. Lee, Mehrdad Mofidi, Sanjay Mehrotra, Raul-Adrian Cernea
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Publication number: 20030061437Abstract: An EEPROM system includes flash EEPROM cells organized into subarrays. Pairs of subarrays share row address decoders by sharing word lines, and individual subarrays have dedicated column address decoders and data registers. Each row decoder has an associated row address latch, and each column decoder has an associated column address latch. Multiple data chunks are concurrently written into the subarrays by first latching chunk addresses into the row and column address latches, and corresponding chunks of data into the data registers, then activating a programming signal to initiate concurrent programming and verifying the programming of the data chunks.Type: ApplicationFiled: November 1, 2002Publication date: March 27, 2003Inventors: Douglas J. Lee, Mehrdad Mofidi, Sanjay Mehrotra, Raul-Adrian Cernea
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Publication number: 20030046603Abstract: A system of Flash EEprom memory chips with controlling circuits serves as non-volatile memory such as that provided by magnetic disk drives. Improvements include selective multiple sector erase, in which any combinations of Flash sectors may be erased together. Selective sectors among the selected combination may also be de-selected during the erase operation. Another improvement is the ability to remap and replace defective cells with substitute cells. The remapping is performed automatically as soon as a defective cell is detected. When the number of defects in a Flash sector becomes large, the whole sector is remapped. Yet another improvement is the use of a write cache to reduce the number of writes to the Flash EEprom memory, thereby minimizing the stress to the device from undergoing too many write/erase cycling.Type: ApplicationFiled: October 22, 2002Publication date: March 6, 2003Inventors: Eliyahou Harari, Robert D. Norman, Sanjay Mehrotra
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Patent number: 6523132Abstract: A system of Flash EEprom memory chips with controlling circuits serves as non-volatile memory such as that provided by magnetic disk drives. Improvements include selective multiple sector erase, in which any combinations of Flash sectors may be erased together. Selective sectors among the selected combination may also be de-selected during the erase operation. Another improvement is the ability to remap and replace defective cells with substitute cells. The remapping is performed automatically as soon as a defective cell is detected. When the number of defects in a Flash sector becomes large, the whole sector is remapped. Yet another improvement is the use of a write cache to reduce the number of writes to the Flash EEprom memory, thereby minimizing the stress to the device from undergoing too many write/erase cycling.Type: GrantFiled: September 8, 2000Date of Patent: February 18, 2003Assignee: SanDisk CorporationInventors: Eliyahou Harari, Robert D. Norman, Sanjay Mehrotra
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Patent number: 6519185Abstract: A system of Flash EEprom memory chips with controlling circuits serves as non-volatile memory such as that provided by magnetic disk drives. Improvements include selective multiple sector erase, in which any combinations of Flash sectors may be erased together. Selective sectors among the selected combination may also be de-selected during the erase operation. Another improvement is the ability to remap and replace defective cells with substitute cells. The remapping is performed automatically as soon as a defective cell is detected. When the number of defects in a Flash sector becomes large, the whole sector is remapped. Yet another improvement is the use of a write cache to reduce the number of writes to the Flash EEprom memory, thereby minimizing the stress to the device from undergoing too many write/erase cycling.Type: GrantFiled: February 14, 2001Date of Patent: February 11, 2003Assignee: SanDisk CorporationInventors: Eliyahou Harari, Robert D. Norman, Sanjay Mehrotra
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Publication number: 20030014689Abstract: A system of Flash EEprom memory chips with controlling circuits serves as non-volatile memory such as that provided by magnetic disk drives. Improvements include selective multiple sector erase, in which any combinations of Flash sectors may be erased together. Selective sectors among the selected combination may also be de-selected during the erase operation. Another improvement is the ability to remap and replace defective cells with substitute cells. The remapping is performed automatically as soon as a defective cell is detected. When the number of defects in a Flash sector becomes large, the whole sector is remapped. Yet another improvement is the use of a write cache to reduce the number of writes to the Flash EEprom memory, thereby minimizing the stress to the device from undergoing too many write/erase cycling.Type: ApplicationFiled: September 6, 2002Publication date: January 16, 2003Inventors: Eliyahou Harari, Robert D. Norman, Sanjay Mehrotra
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Patent number: 6462992Abstract: A system of Flash EEprom memory chips with controlling circuits serves as non-volatile memory such as that provided by magnetic disk drives. Improvements include selective multiple sector erase, in which any combinations of Flash sectors may be erased together. Selective sectors among the selected combination may also be de-selected during the erase operation. Another improvement is the ability to remap and replace defective cells with substitute cells. The remapping is performed automatically as soon as a defective cell is detected. When the number of defects in a Flash sector becomes large, the whole sector is remapped. Yet another improvement is the use of a write cache to reduce the number of writes to the Flash EEprom memory, thereby minimizing the stress to the device from undergoing too many write/erase cycling.Type: GrantFiled: January 18, 2001Date of Patent: October 8, 2002Assignee: SanDisk CorporationInventors: Eliyahou Harari, Robert D. Norman, Sanjay Mehrotra