Patents by Inventor Sanjaysingh Lalbahadoersing
Sanjaysingh Lalbahadoersing has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11675281Abstract: A resonant amplitude grating mark has a periodic structure configured to scatter radiation incident on the mark. The scattering is mainly by coupling of the incident radiation to a waveguiding mode in the periodic structure. The effective refractive indexes and lengths of portions of the periodic structure are configured to provide an optical path length of the unit cell in the direction of periodicity that essentially equals an integer multiple of a wavelength present in the radiation. The effective refractive indexes and lengths of the portions are also configured to provide an optical path length of the second portion in the direction of periodicity that is selected from 0.30 to 0.49 of the wavelength present in the spectrum of the radiation.Type: GrantFiled: June 15, 2020Date of Patent: June 13, 2023Assignee: ASML NETHERLANDS B.V.Inventors: Jin Dai, Sanjaysingh Lalbahadoersing
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Publication number: 20220252994Abstract: A resonant amplitude grating mark has a periodic structure configured to scatter radiation incident on the mark. The scattering is mainly by coupling of the incident radiation to a waveguiding mode in the periodic structure. The effective refractive indexes and lengths of portions of the periodic structure are configured to provide an optical path length of the unit cell in the direction of periodicity that essentially equals an integer multiple of a wavelength present in the radiation. The effective refractive indexes and lengths of the portions are also configured to provide an optical path length of the second portion in the direction of periodicity that is selected from 0.30 to 0.49 of the wavelength present in the spectrum of the radiation.Type: ApplicationFiled: June 15, 2020Publication date: August 11, 2022Applicant: ASML NETHERLANDS B.V.Inventors: Jin DAI, Sanjaysingh LALBAHADOERSING
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Patent number: 11086232Abstract: A resonant amplitude grating mark has a periodic structure configured to scatter radiation incident on a surface plane of the alignment mark. The scattering is mainly by excitation of a resonant mode in the periodic structure parallel to the surface plane. The effective refractive indexes and lengths of portions of the periodic structure are configured to provide an optical path length of the unit cell in the direction of periodicity that equals an integer multiple of a wavelength present in the spectrum of the radiation. The effective refractive indexes and lengths of the portions are also configured to provide an optical path length of the second portion in the direction of periodicity that is equal to half of the wavelength present in the spectrum of the radiation.Type: GrantFiled: August 23, 2018Date of Patent: August 10, 2021Assignee: ASML Netherlands B.V.Inventors: Beniamino Sciacca, Sanjaysingh Lalbahadoersing, Jia Wang
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Patent number: 10948837Abstract: An apparatus for determining information relating to at least one target alignment mark in a semiconductor device substrate. The target alignment mark is initially at least partially obscured by an opaque carbon or metal layer on the substrate. The apparatus includes an energy delivery system configured to emit a laser beam for modifying at least one portion of the opaque layer to cause a phase change and/or chemical change in the at least one portion that increases the transparency of the portion. An optical signal can propagate through the modified portion to determine information relating to the target alignment mark.Type: GrantFiled: June 18, 2018Date of Patent: March 16, 2021Assignee: ASML Netherlands B.V.Inventors: An Gao, Sanjaysingh Lalbahadoersing, Andrey Alexandrovich Nikipelov, Alexey Olegovich Polyakov, Brennan Peterson
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Publication number: 20200319563Abstract: A resonant amplitude grating mark has a periodic structure configured to scatter radiation incident on a surface plane of the alignment mark. The scattering is mainly by excitation of a resonant mode in the periodic structure parallel to the surface plane. The effective refractive indexes and lengths of portions of the periodic structure are configured to provide an optical path length of the unit cell in the direction of periodicity that equals an integer multiple of a wavelength present in the spectrum of the radiation. The effective refractive indexes and lengths of the portions are also configured to provide an optical path length of the second portion in the direction of periodicity that is equal to half of the wavelength present in the spectrum of the radiation.Type: ApplicationFiled: August 23, 2018Publication date: October 8, 2020Applicant: ASML NETHERLANDS B.V.Inventors: Beniamino SCIACCA, Sanjaysingh LALBAHADOERSING, Jia WANG
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Publication number: 20200159134Abstract: An apparatus for determining information relating to at least one target alignment mark in a semiconductor device substrate. The target alignment mark is initially at least partially obscured by an opaque carbon or metal layer on the substrate. The apparatus includes an energy delivery system configured to emit a laser beam for modifying at least one portion of the opaque layer to cause a phase change and/or chemical change in the at least one portion that increases the transparency of the portion. An optical signal can propagate through the modified portion to determine information relating to the target alignment mark.Type: ApplicationFiled: June 18, 2018Publication date: May 21, 2020Applicant: ASML NETHERLANDS B.V.Inventors: An GAO, Sanjaysingh LALBAHADOERSING, Audrey Alexandrovich NIKIPELOV, Alexey Olegovich POLYAKOV, Brennan PETERSON
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Patent number: 10429750Abstract: A method for recovering alignment marks in a mark layer of a substrate, the method including providing a substrate with a mark layer covered by a resist layer; forming alignment marks in the mark layer, wherein an alignment mark is formed by: exposing the resist layer to a patterned radiation beam thereby forming an alignment pattern in the resist; forming one or more recovery marks in the mark layer, wherein a recovery mark is formed by exposing the resist layer to at least a portion of the patterned radiation beam thereby forming an alignment pattern in a mark area of the resist and subsequently exposing the mark area of the resist, each time with a shifted patterned radiation beam until a substantial part of the mark area has been exposed.Type: GrantFiled: June 30, 2017Date of Patent: October 1, 2019Assignee: ASML Netherlands B.V.Inventors: Cayetano Sanchez-Fabres Cobaleda, Sanjaysingh Lalbahadoersing
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Publication number: 20190171120Abstract: A method for recovering alignment marks in a mark layer of a substrate, the method including providing a substrate with a mark layer covered by a resist layer; forming alignment marks in the mark layer, wherein an alignment mark is formed by: exposing the resist layer to a patterned radiation beam thereby forming an alignment pattern in the resist; forming one or more recovery marks in the mark layer, wherein a recovery mark is formed by exposing the resist layer to at least a portion of the patterned radiation beam thereby forming an alignment pattern in a mark area of the resist and subsequently exposing the mark area of the resist, each time with a shifted patterned radiation beam until a substantial part of the mark area has been exposed.Type: ApplicationFiled: June 30, 2017Publication date: June 6, 2019Applicant: ASML NETHERLANDS B.V.Inventors: Cayetano SANCHEZ-FABRES COBALEDA, Sanjaysingh LALBAHADOERSING
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Patent number: 10191390Abstract: A method including: providing a reference substrate with a first mark pattern; providing the reference substrate with a first resist layer on the reference substrate, wherein the first resist layer has a minimal radiation dose needed for development of the first resist; using a reference patterning device to impart a radiation beam with a second mark pattern in its cross-section to form a patterned radiation beam; and exposing a target portion of the first resist layer of the reference substrate n times to said patterned radiation beam to create exposed areas in the target portion of the first resist layer in accordance with the second mark pattern that have been subjected to an accumulated radiation dose above the minimal radiation dose of the first resist layer, wherein n is an integer with a value of at least two.Type: GrantFiled: June 27, 2016Date of Patent: January 29, 2019Assignee: ASML Netherlands B.V.Inventors: Paul Cornelis Hubertus Aben, Sanjaysingh Lalbahadoersing, Jurgen Johannes Henderikus Maria Schoonus, David Frans Simon Deckers
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Publication number: 20180149981Abstract: A method including: providing a reference substrate with a first mark pattern; providing the reference substrate with a first resist layer on the reference substrate, wherein the first resist layer has a minimal radiation dose needed for development of the first resist; using a reference patterning device to impart a radiation beam with a second mark pattern in its cross-section to form a patterned radiation beam; and exposing a target portion of the first resist layer of the reference substrate n times to said patterned radiation beam to create exposed areas in the target portion of the first resist layer in accordance with the second mark pattern that have been subjected to an accumulated radiation dose above the minimal radiation dose of the first resist layer, wherein n is an integer with a value of at least two.Type: ApplicationFiled: June 27, 2016Publication date: May 31, 2018Inventors: Paul Cornelis Hubertus ABEN, Sanjaysingh LALBAHADOERSING, Jurgen Johnnes Henderikus Maria SCHOONUS
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Publication number: 20130070226Abstract: The invention relates to a marker structure for optical alignment of a substrate and provided thereon. The marker structure has a first reflecting surface at a first level and a second reflecting surface at a second level. A separation between the first level and the second level determines a phase depth condition. The marker structure further has an additional structure. The additional structure is arranged to modify the separation during manufacture of the marker structure. The invention further relates to a method of forming such a marker structure.Type: ApplicationFiled: November 15, 2012Publication date: March 21, 2013Applicant: ASML NETHERLANDS B.V.Inventors: Richard Johannes Franciscus Van Haren, Sanjaysingh Lalbahadoersing, Sami Musa, Patrick Warnaar, Maya Angelova Doytcheva
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Patent number: 8319967Abstract: The invention relates to a marker structure for optical alignment of a substrate and provided thereon. The marker structure has a first reflecting surface at a first level and a second reflecting surface at a second level. A separation between the first level and the second level determines a phase depth condition. The marker structure further has an additional structure. The additional structure is arranged to modify the separation during manufacture of the marker structure. The invention further relates to a method of forming such a marker structure.Type: GrantFiled: December 4, 2008Date of Patent: November 27, 2012Assignee: ASML Netherlands B.V.Inventors: Richard Johannes Franciscus Van Haren, Sanjaysingh Lalbahadoersing, Sami Musa, Patrick Warnaar, Maya Angelova Doytcheva
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Patent number: 8243259Abstract: A substrate stage for an immersion type lithographic apparatus is arranged to project a patterned radiation beam from a patterning device onto a substrate, the substrate stage being constructed to hold the substrate and including at least a sensor for sensing the patterned radiation beam, the sensor including an at least partially transmissive layer having a front side facing the incoming radiation beam and a back side opposite the front side, wherein the back side is provided with at least a sensor mark to be subjected to the radiation beam transmitted through the layer.Type: GrantFiled: June 17, 2009Date of Patent: August 14, 2012Assignee: ASML Netherlands B.V.Inventors: Vitally Prosyentsov, Sanjaysingh Lalbahadoersing, Sami Musa, Hyun-Woo Lee
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Patent number: 8203692Abstract: An alignment mark on a substrate includes a periodic structure of a plurality of first elements and a plurality of second elements. The elements are arranged in an alternating repetitive sequence in a first direction. An overall pitch of the periodic structure is equal to a sum of a width of the first element and a width of the second element in the first direction. Each first element has a first periodic sub-structure with a first sub-pitch and each second element has a second periodic sub-structure with second sub-pitch. An optical property of the first element for interaction with a beam of radiation having a wavelength ? is different from the optical property of the second element. The overall pitch is larger than the wavelength ?, and each of the first and the second sub-pitch is smaller than the wavelength.Type: GrantFiled: June 11, 2009Date of Patent: June 19, 2012Assignee: ASML Netherlands B.V.Inventors: Sami Musa, Richard Johannes Franciscus Van Haren, Sanjaysingh Lalbahadoersing
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Patent number: 8072615Abstract: The position of a product is measured using an alignment mark on the product. Radiation is transmitted towards the alignment mark and diffracted by a pattern in the alignment mark. Position information is determined from phase relations of the diffracted radiation. The alignment mark comprises a set of mutually parallel conductor tracks from which the diffracted radiation is collected, the pattern being defined by a pattern of variation of the pitch between successive tracks as a function of position along the surface of the product. Thus, for example the pattern comprises alternating first and second areas wherein the pitch has a first and second value, respectively. Because the tracks in the different parts of the pattern, such as the first and second areas, are parallel to each other improved measurements are possible.Type: GrantFiled: December 11, 2008Date of Patent: December 6, 2011Assignee: ASML Netherlands B.V.Inventors: Sami Musa, Richard Johannes Franciscus Van Haren, Sanjaysingh Lalbahadoersing, Xiuhong Wei
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Publication number: 20090316122Abstract: A substrate stage for an immersion type lithographic apparatus is arranged to project a patterned radiation beam from a patterning device onto a substrate, the substrate stage being constructed to hold the substrate and including at least a sensor for sensing the patterned radiation beam, the sensor including an at least partially transmissive layer having a front side facing the incoming radiation beam and a back side opposite the front side, wherein the back side is provided with at least a sensor mark to be subjected to the radiation beam transmitted through the layer.Type: ApplicationFiled: June 17, 2009Publication date: December 24, 2009Applicant: ASML NETHERLANDS B.V.Inventors: Vitaliy Prosyentsov, Sanjaysingh Lalbahadoersing, Sami Musa, Hyun-Woo Lee
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Publication number: 20090310113Abstract: An alignment mark on a substrate includes a periodic structure of a plurality of first elements and a plurality of second elements. The elements are arranged in an alternating repetitive sequence in a first direction. An overall pitch of the periodic structure is equal to a sum of a width of the first element and a width of the second element in the first direction. Each first element has a first periodic sub-structure with a first sub-pitch and each second element has a second periodic sub-structure with second sub-pitch. An optical property of the first element for interaction with a beam of radiation having a wavelength ? is different from the optical property of the second element. The overall pitch is larger than the wavelength ?, and each of the first and the second sub-pitch is smaller than the wavelength.Type: ApplicationFiled: June 11, 2009Publication date: December 17, 2009Applicant: ASML NETHERLANDS B.V.Inventors: Sami Musa, Richard Johannes Franciscus Van Haren, Sanjaysingh Lalbahadoersing
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Patent number: 7598024Abstract: A method for alignment mark preservation includes a step of preparing a lower alignment mark structure on a substrate. In one configuration of the invention, the alignment mark structure includes a lower trench. In a further step, a hard mask coating is applied to a substrate that includes the alignment marks. Preferably, the hard mask material is an amorphous carbon material. In a further step, a selected portion of the hard mask located above the lower alignment mark structure is exposed to a dose of radiation. In one aspect of the invention, the surface of regions of the hard mask coating that receive the dose of radiation become elevated with respect to other regions of the hard mask surface. For those elevated regions of the hard mask that are aligned with an underlying alignment mark trench, the elevated regions serve as an alignment mark that preserves the original horizontal position of the underlying alignment mark.Type: GrantFiled: March 8, 2006Date of Patent: October 6, 2009Assignee: ASML Netherlands B.V.Inventors: Sanjaysingh Lalbahadoersing, Sami Musa
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Publication number: 20090153861Abstract: The position of a product is measured using an alignment mark on the product. Radiation is transmitted towards the alignment mark and diffracted by a pattern in the alignment mark. Position information is determined from phase relations of the diffracted radiation. The alignment mark comprises a set of mutually parallel conductor tracks from which the diffracted radiation is collected, the pattern being defined by a pattern of variation of the pitch between successive tracks as a function of position along the surface of the product. Thus, for example the pattern comprises alternating first and second areas wherein the pitch has a first and second value, respectively. Because the tracks in the different parts of the pattern, such as the first and second areas, are parallel to each other improved measurements are possible.Type: ApplicationFiled: December 11, 2008Publication date: June 18, 2009Applicant: ASML Netherlands B.V.Inventors: Sami MUSA, Richard Johannes Franciscus Van Haren, Sanjaysingh Lalbahadoersing, Xiuhong Wei
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Publication number: 20090147232Abstract: The invention relates to a marker structure for optical alignment of a substrate and provided thereon. The marker structure has a first reflecting surface at a first level and a second reflecting surface at a second level. A separation between the first level and the second level determines a phase depth condition. The marker structure further has an additional structure. The additional structure is arranged to modify the separation during manufacture of the marker structure. The invention further relates to a method of forming such a marker structure.Type: ApplicationFiled: December 4, 2008Publication date: June 11, 2009Applicant: ASML NETHERLANDS B.V.Inventors: Richard Johannes Franciscus Van Haren, Sanjaysingh Lalbahadoersing, Sami Musa, Patrick Warnaar, Maya Angelova Doytcheva