Abstract: An imaging device that includes pixels arranged in a matrix having rows and columns, the pixels including first pixels and second pixels different from the first pixels, the first pixels and the second pixels being located in one of the columns, each of the pixels including a photoelectric converter that converts incident light into signal charge, and a first transistor having a first gate, a first source and a first drain, the first gate being coupled to the photoelectric converter. The imaging device further includes a first line coupled to one of the first source and drain of the first pixels; a second line coupled to one of the first source and drain of the second pixels; a third line coupled to the other of the first source and drain of the first pixels; and voltage circuitry coupled to the third line and that supplies a first and second voltage.

Abstract: A photoelectric conversion element includes: a first electrode; a second electrode; and a photoelectric conversion layer disposed between the first electrode and the second electrode and containing semiconducting carbon nanotubes and a first material that functions as a donor or an acceptor for the semiconducting carbon nanotubes. The semiconducting carbon nanotubes have light absorption characteristics including a first absorption peak at a first wavelength, a second absorption peak at a second wavelength shorter than the first wavelength, and a third absorption peak at a third wavelength shorter than the second wavelength. The first material is transparent to light in at least one wavelength range selected from the group consisting of a first wavelength range between the first wavelength and the second wavelength and a second wavelength range between the second wavelength and the third wavelength.

Abstract: An imaging device includes: a first pixel array including a first photoelectric converter and first pixel electrodes connected to the first photoelectric converter; and a second pixel array including a second photoelectric converter and second pixel electrodes connected to the second photoelectric converter. The first pixel array and the second pixel array are stacked one on another. In a plan view, an area of an overlapping region defined by overlapping between the first pixel electrodes and a corresponding second pixel electrode of the second pixel electrodes is smaller than an area of a remaining region obtained by excluding the overlapping region from the corresponding second pixel electrode.

Abstract: An imaging device includes a first substrate and a second substrate stacked thereon. The first substrate includes: a photoelectric converter that converts incident light into a signal charge; a first transistor that outputs a signal corresponding to the signal charge, a gate of the first transistor being connected to the photoelectric converter; and a second transistor, one of a source and a drain thereof being connected to the photoelectric converter, the other of the source and the drain thereof being connected to a source or a drain of the first transistor. The second substrate includes: a constant current source circuit that is connected to one of the source and the drain of the first transistor; and a bias circuit that is connected to the other of the source and the drain of the first transistor and that generates a first voltage and a second voltage different therefrom.

Abstract: A camera system includes: a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, the photoelectric conversion layer converting incident light into electric charge; voltage application circuitry; and a controller that derives a duty cycle corresponding to an attenuation ratio set for a first frame and that causes the voltage application circuitry to apply a pulse voltage having the duty cycle between the first electrode and the second electrode in the first frame.

Abstract: An imaging device includes a pixel including a permittivity modulation element that includes opposite and pixel electrodes and a permittivity modulation structure whose permittivity changes according to the radiation of light, a capacitive element that includes first and second electrodes, and a detection circuit that outputs a signal corresponding to the potential of the pixel electrode. Also provided are a voltage supply circuit that applies first and second voltages in different first and second periods to one of the opposite electrode and the first electrode, and a signal processing circuit that generates a third signal being a difference between a first signal output from the detection circuit in the first period and a second signal output from the detection circuit in the second period. The potential difference between the opposite electrode and the first electrode when the second voltage is applied is less than when the first voltage is applied.

Abstract: An imaging device includes: a pixel array including pixels including a first pixel and a second pixel, each of the pixels including a photoelectric converter that converts light into charge, the photoelectric converter including a first electrode, a second electrode facing the first electrode, and a photoelectric conversion layer between the first electrode and the second electrode; and an addition circuit that adds together a signal generated in the first pixel and a signal generated in the second pixel.

Abstract: An imaging apparatus includes a unit pixel including a pixel electrode, a charge accumulation region electrically connected to the pixel electrode, and a signal detection circuit electrically connected to the charge accumulation region; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the electrodes; and a voltage supply circuit configured to selectively apply any one of first, second, and third voltages between the electrodes. The photoelectric conversion layer exhibits first and second wavelength sensitivity characteristics in a wavelength range when the voltage supply circuit applies the first and second voltages between the electrodes, respectively, and becomes insensitive to light in the wavelength range when the voltage supply circuit applies the third voltage between the electrodes.

Abstract: In an imaging device, a first digital signal corresponding to a first analog signal read out from a pixel, and a second digital signal corresponding to the amount of charge accumulated during a first exposure period following a period for reading the first analog signal. A difference is acquired between a first difference and a second difference wherein the first difference is a difference between a third digital signal and the second digital signal, the third digital signal is a digital signal corresponding to the amount of charge cumulatively accumulated during the first exposure period and a following second exposure period, and the second difference is a difference between the second digital signal and the first digital signal. At least one of the first exposure period or the second exposure period includes a period during which the first light source is in the on-state.

Abstract: A camera system includes an imaging device configured to change sensitivity according to an instruction from a user; a display; and a graphic interface unit that causes the display to selectively display a first image for receiving the instruction for continuously changing the sensitivity and a second image for receiving the instruction for changing the sensitivity stepwise.

Abstract: An imaging apparatus includes a unit pixel including a pixel electrode; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the pixel electrode and the counter electrode; and a computing circuit that acquires a first signal upon a first voltage being applied between the pixel electrode and the counter electrode, the first signal corresponding to an image captured with visible light and infrared light and a second signal upon a second voltage being applied between the pixel electrode and the counter electrode, the second signal corresponding to an image captured with visible light, and generates a third signal by performing a computation using the first signal and the second signal, the third signal corresponding to an image captured with infrared light.

Abstract: An imaging apparatus includes a unit pixel including a pixel electrode, a charge accumulation region electrically connected to the pixel electrode, and a signal detection circuit electrically connected to the charge accumulation region; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the electrodes; and a voltage supply circuit configured to selectively apply any one of first, second, and third voltages between the electrodes. The photoelectric conversion layer exhibits first and second wavelength sensitivity characteristics in a wavelength range when the voltage supply circuit applies the first and second voltages between the electrodes, respectively, and becomes insensitive to light in the wavelength range when the voltage supply circuit applies the third voltage between the electrodes.

Abstract: A camera system including an imaging device that captures a first image by a normal exposure including only one exposure and that captures a second image by a multiple exposure including a plurality of exposures; and a control circuit. The the imaging device captures the second image in a first frame period, and the control circuit determines, based on the second image captured in the first frame period, whether to capture an image by the normal exposure or capture an image by the multiple exposure in a second frame period following the first frame period.

Abstract: An imaging device includes pixels. Each of the pixels includes a counter electrode, a pixel electrode, and a photoelectric conversion layer that includes carbon nanotubes. The pixels include a first pixel and a second pixel adjacent to the first pixel. The pixel electrode of the first pixel and the pixel electrode of the second pixel are isolated from each other. Carbon nanotubes included in the photoelectric conversion layer in at least one selected from the group consisting of the first pixel and the second pixel include at least one first carbon nanotube that satisfies A<B, where A denotes length of a carbon nanotube in a direction in which the pixel electrode of the first pixel and the pixel electrode of the second pixel are arranged and B denotes length of a gap between the pixel electrode of the first pixel and the pixel electrode of the second pixel.

Abstract: An imaging device including: a semiconductor substrate including a pixel region and a peripheral region; an insulating layer that covers the pixel and peripheral regions; first electrodes located on the insulating layer above the pixel region; a photoelectric conversion layer that covers the first electrodes; a second electrode that covers the photoelectric conversion layer; detection circuitry configured to be electrically connected to the first electrodes; peripheral circuitry configured to be electrically connected to the detection circuitry, and including analog circuitry; and a third electrode electrically connected to the second electrode.

Abstract: An imaging device includes a first pixel and a second pixel adjacent to the first pixel. Each of the first pixel and the second pixel includes a first electrode, a second electrode positioned on or above the first electrode and facing the first electrode, a photoelectric conversion layer positioned between the first electrode and the second electrode, and a first charge-blocking layer positioned between the first electrode and the photoelectric conversion layer. The first charge-blocking layer of the first pixel is separated from the first charge-blocking layer of the second pixel. The photoelectric conversion layer is disposed continuously to the first pixel and the second pixel. An area of the first charge-blocking layer of the first pixel is larger than an area of the first electrode of the first pixel in plan view.

Abstract: A camera system includes an imaging device that acquires a first image by a normal exposure including only one exposure and that acquires a second image by a multiple exposure including a plurality of exposures; and an image processor that extracts a feature value of a first object in the first image and that identifies one or more locations corresponding to the feature value in the second image.

Abstract: An imaging device including a semiconductor substrate including a pixel region and a peripheral region; an insulating layer covering the pixel and peripheral regions; first electrodes located on the insulating layer above the pixel region; a photoelectric conversion layer covering the first electrodes; a second electrode that covers the photoelectric conversion layer; detection circuitry electrically connected to the first electrodes; peripheral circuitry electrically connected to the detection circuitry, and; and a third electrode located on the insulating layer.

Abstract: An imaging device including: a first pixel and a second pixel that are arranged along a first direction, the first pixel and the second pixel each including a photoelectric converter that converts light into a charge, a charge accumulator that accumulates the charge, and a first transistor one of a source and a drain of which is connected to the charge accumulator; a first line and a second line that each extend along the first direction; first voltage supply circuitry that is connected to the first transistor of the first pixel through the first line; and second voltage supply circuitry that is connected to the first transistor of the second pixel through the second line.

Abstract: An optical sensor includes: a photosensitive layer that absorbs incident light to generate a first carrier with a first polarity and a second carrier with a second polarity different from the first polarity; a channel layer that is electrically connected to the photosensitive layer and that conducts the first carrier that has moved from the photosensitive layer; a counter electrode facing the channel layer through the photosensitive layer; an insulating layer positioned between the photosensitive layer and the counter electrode; and a source electrode and a drain electrode each electrically connected to the channel layer.