Patents by Inventor Santosh Sharma
Santosh Sharma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10333327Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.Type: GrantFiled: April 24, 2018Date of Patent: June 25, 2019Assignee: Navitas Semiconductor, Inc.Inventors: Daniel Marvin Kinzer, Santosh Sharma, Ju Jason Zhang
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Patent number: 10305472Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments, a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions.Type: GrantFiled: April 24, 2018Date of Patent: May 28, 2019Assignee: Navitas Semiconductor, Inc.Inventors: Daniel Marvin Kinzer, Santosh Sharma, Ju Zhang
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Publication number: 20190158086Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments, a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions.Type: ApplicationFiled: April 24, 2018Publication date: May 23, 2019Inventors: Daniel Marvin Kinzer, Santosh Sharma, Ju Zhang
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Publication number: 20190148961Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.Type: ApplicationFiled: April 24, 2018Publication date: May 16, 2019Inventors: Daniel Marvin Kinzer, Santosh Sharma, Ju Jason Zhang
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Patent number: 10277048Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.Type: GrantFiled: December 11, 2017Date of Patent: April 30, 2019Assignee: Navitas Semiconductor, Inc.Inventors: Daniel Marvin Kinzer, Santosh Sharma, Ju Zhang
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Patent number: 10236877Abstract: A half bridge GaN circuit is disclosed. The circuit includes a low side power switch, a high side power switch, and a high side power switch controller, configured to control the conductivity of the high sigh power switch based on the one or more input signals. The high side power switch controller includes a receiver input reset circuit configured to simultaneously receive first and second signals, wherein the first signal corresponds with the high side power switch being turned on, wherein the first signal corresponds with the high side power switch controller turning on the high side power switch, wherein the second signal corresponds with the high side power switch controller turning off the high side power switch, and wherein the receiver input reset circuit is further configured, in response to the first and second signals, to prevent the high side power switch from becoming non-conductive.Type: GrantFiled: September 26, 2018Date of Patent: March 19, 2019Assignee: NAVITAS SEMICONDUCTOR, INC.Inventors: Santosh Sharma, Daniel Marvin Kinzer, Ju Zhang
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Patent number: 10224817Abstract: A half bridge circuit is disclosed. The circuit includes low side and high side power switches selectively conductive according to one or more control signals. The circuit also includes a low side power switch driver, configured to control the conductivity state of the low side power switch, and a high side power switch driver, configured to control the conductivity state of the high side power switch. The circuit also includes a controller configured to generate the one or more control signals, a high side slew detect circuit configured to prevent the high side power switch driver from causing the high side power switch to be conductive while the voltage at the switch node is increasing, and a low side slew detect circuit configured to prevent the low side power switch driver from causing the low side power switch to be conductive while the voltage at the switch node is decreasing.Type: GrantFiled: July 19, 2018Date of Patent: March 5, 2019Assignee: Navitas Semiconductor, Inc.Inventors: Santosh Sharma, Thomas Ribarich, Victor Sinow, Daniel Marvin Kinzer
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Publication number: 20190044357Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.Type: ApplicationFiled: October 4, 2018Publication date: February 7, 2019Inventors: Daniel Marvin Kinzer, Santosh Sharma, Ju Zhang
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Patent number: 10193554Abstract: A half bridge GaN circuit is disclosed. The circuit includes a low side power switch configured to be selectively conductive according to one or more input signals, a high side power switch configured to be selectively conductive according to the one or more input signals, and a high side power switch controller, configured to control the conductivity of the high sigh power switch based on the one or more input signals. The high side power switch controller includes a capacitor, and a logic circuit, wherein the capacitor is configured to capacitively couple a signal based on the input signals to the logic circuit, and the logic circuit is configured to control the conductivity of the high sigh power switch based on the capacitively coupled signal.Type: GrantFiled: November 15, 2017Date of Patent: January 29, 2019Assignee: Navitas Semiconductor, Inc.Inventors: Santosh Sharma, Marco Giandalia, Daniel Marvin Kinzer, Thomas Ribarich
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Patent number: 10170922Abstract: An electronic circuit is disclosed. The electronic circuit includes a GaN substrate, a first power supply node on the substrate, an output node, a signal node, and an output component on the substrate, where the output component is configured to generate a voltage at the output node based at least in part on a voltage at the signal node. The electronic circuit also includes a capacitor coupled to the signal node, where, the capacitor is configured to selectively cause the voltage at the signal node to be greater than the voltage of the first power supply node, such that the output component causes the voltage at the output node to be substantially equal to the voltage of the first power supply node.Type: GrantFiled: February 23, 2018Date of Patent: January 1, 2019Assignee: Navitas Semiconductor, Inc.Inventors: Daniel Marvin Kinzer, Santosh Sharma, Ju Zhang
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Patent number: 10135275Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.Type: GrantFiled: July 25, 2016Date of Patent: November 20, 2018Assignee: NAVITAS SEMICONDUCTOR INC.Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Patent number: 10110221Abstract: A half bridge GaN circuit is disclosed. The circuit includes a low side power switch, a high side power switch, and a high side power switch controller, configured to control the conductivity of the high sigh power switch based on the one or more input signals. The high side power switch controller includes a receiver input reset circuit configured to simultaneously receive first and second signals, wherein the first signal corresponds with the high side power switch being turned on, wherein the first signal corresponds with the high side power switch controller turning on the high side power switch, wherein the second signal corresponds with the high side power switch controller turning off the high side power switch, and wherein the receiver input reset circuit is further configured, in response to the first and second signals, to prevent the high side power switch from becoming non-conductive.Type: GrantFiled: February 21, 2018Date of Patent: October 23, 2018Assignee: Navitas Semiconductor, Inc.Inventors: Santosh Sharma, Daniel Marvin Kinzer, Ju Zhang
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Patent number: 10050115Abstract: Approaches for LDMOS devices are provided. A method of forming a semiconductor structure includes forming a gate dielectric including a first portion having a first uniform thickness, a second portion having a second uniform thickness different than the first uniform thickness, and a transition portion having tapered surface extending from the first portion to the second portion. The gate dielectric is formed on a planar upper surface of a substrate. The tapered surface is at an acute angle relative to the upper surface of the substrate.Type: GrantFiled: December 30, 2014Date of Patent: August 14, 2018Assignee: GLOBALFOUNDRIES INC.Inventors: Brennan J. Brown, Natalie B. Feilchenfeld, Max G. Levy, Santosh Sharma, Yun Shi, Michael J. Zierak
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Patent number: 9960620Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.Type: GrantFiled: March 24, 2015Date of Patent: May 1, 2018Assignee: Navitas Semiconductor, Inc.Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Patent number: 9960764Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments, a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions.Type: GrantFiled: February 13, 2017Date of Patent: May 1, 2018Assignee: Navitas Semiconductor, Inc.Inventors: Daniel Marvin Kinzer, Santosh Sharma, Ju Zhang
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Publication number: 20180102661Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.Type: ApplicationFiled: December 11, 2017Publication date: April 12, 2018Inventors: Daniel Marvin Kinzer, Santosh Sharma, Ju Zhang
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Patent number: 9929652Abstract: A power circuit is disclosed. The power circuit includes a power capacitor and a power resistor connected to the power capacitor. The power circuit also includes a power integrated circuit, including a GaN-based substrate, a power FET on the substrate, and a driver on the substrate. The driver is configured to charge a gate of the power FET using current from a power node. The power integrated circuit also includes a first power voltage regulator on the substrate, where the driver is configured to receive current from the capacitor through the resistor while the driver charges the gate of the power FET, and where the first power voltage regulator is configured to provide current to the capacitor while the driver does not charge the gate of the power FET.Type: GrantFiled: December 8, 2016Date of Patent: March 27, 2018Assignee: Navitas Semiconductor, Inc.Inventors: Thomas Ribarich, Santosh Sharma, Ju Zhang, Marco Giandalia, Daniel Marvin Kinzer
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Patent number: 9859732Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.Type: GrantFiled: March 24, 2015Date of Patent: January 2, 2018Assignee: Navitas Semiconductor, Inc.Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Patent number: 9831867Abstract: A half bridge GaN circuit is disclosed. The circuit includes a low side circuit, which has a low side switch, a low side switch driver configured to drive the low side switch, a first level shift circuit configured to receive a first level shift signal, and a second level shift circuit configured to generate a second level shift signal. The half bridge GaN circuit also includes a high side circuit, which has a high side switch configured to be selectively conductive according to a voltage level of a received high side switch signal, and a high side switch driver configured to generate the high side switch signal in response to the level shift signals. A transition in the voltage of the high side switch signal causes the high side switch driver to prevent additional transitions of the voltage level of the high side switch signal for a period of time.Type: GrantFiled: February 22, 2017Date of Patent: November 28, 2017Assignee: Navitas Semiconductor, Inc.Inventors: Daniel Marvin Kinzer, Santosh Sharma, Ju Zhang, Marco Giandalia, Thomas Ribarich
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Publication number: 20170324263Abstract: An electronic circuit is disclosed. The electronic circuit includes a GaN substrate, a first power supply node on the substrate, an output node, a signal node, and an output component on the substrate, where the output component is configured to generate a voltage at the output node based at least in part on a voltage at the signal node. The electronic circuit also includes a capacitor coupled to the signal node, where, the capacitor is configured to selectively cause the voltage at the signal node to be greater than the voltage of the first power supply node, such that the output component causes the voltage at the output node to be substantially equal to the voltage of the first power supply node.Type: ApplicationFiled: July 24, 2017Publication date: November 9, 2017Inventors: Daniel Marvin Kinzer, Santosh Sharma, Ju Zhang