Patents by Inventor Saptarshi DAS

Saptarshi DAS has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9809903
    Abstract: A method of forming a TMDC monolayer comprises providing a multi-layer transition metal dichalcogenide (TMDC) film. The multi-layer TMDC film comprises a plurality of layers of the TMDC. The multi-layer TMDC film is positioned on a conducting substrate. The conducting substrate is contacted with an electrolyte solution. A predetermined electrode potential is applied on the conducting substrate and the TMDC monolayer for a predetermined time. A portion of the plurality of layers of the TMDC included in the multi-layer TMDC film is removed by application of the predetermined electrode potential, thereby leaving a TMDC monolayer film positioned on the conducting substrate.
    Type: Grant
    Filed: March 4, 2016
    Date of Patent: November 7, 2017
    Assignee: UChicago Argonne, LLC
    Inventors: Saptarshi Das, Mrinal K. Bera, Andreas K. Roelofs, Mark Antonio
  • Publication number: 20170302748
    Abstract: In one aspect, a computerized method provides an online social network, wherein online social network comprises a set of nodes, wherein each node represents a user and a set of relationships between each node. The computerized method identifies a set of users that are members of the same family. The computerized method identifies each node of the set of users that are members of the same family. When a member of the set of users interacts with another member of the set of users; the computerized method determines an interaction and determines a family-relationship status between the member and the other member; and scores the interaction. The computerized method generates a family bonding index based on the family relationship status of the member and the other member and the score the interaction. The computerized method updates the set of relationships of the of social network based on the family bonding index.
    Type: Application
    Filed: November 3, 2016
    Publication date: October 19, 2017
    Inventors: ADRIS CHAKRABORTY, PIYAS DE, SAPTARSHI DAS
  • Publication number: 20170253996
    Abstract: A method of forming a TMDC monolayer comprises providing a multi-layer transition metal dichalcogenide (TMDC) film. The multi-layer TMDC film comprises a plurality of layers of the TMDC. The multi-layer TMDC film is positioned on a conducting substrate. The conducting substrate is contacted with an electrolyte solution. A predetermined electrode potential is applied on the conducting substrate and the TMDC monolayer for a predetermined time. A portion of the plurality of layers of the TMDC included in the multi-layer TMDC film is removed by application of the predetermined electrode potential, thereby leaving a TMDC monolayer film positioned on the conducting substrate.
    Type: Application
    Filed: March 4, 2016
    Publication date: September 7, 2017
    Applicant: UChicago Argonne, LLC
    Inventors: Saptarshi Das, Mrinal K. Bera, Andreas K. Roelofs, Mark Antonio
  • Publication number: 20170171889
    Abstract: A method and device for transmitting data between wireless devices includes: generating and transmitting, by a first device, a data cluster signal having a signal identifier, a completion marker, and at least one silence interval provided between the signal identifier and the completion marker; receiving, by a second device, the data cluster signal; identifying, by the second device, a signal type and a transmission completion of the signal received; and decoding, by the second device, the silence interval into the data based on the signal type and a duration of the silence interval.
    Type: Application
    Filed: December 13, 2016
    Publication date: June 15, 2017
    Inventors: Subir K. BISWAS, Dezhi FENG, Faezeh HAJIAGHAJANI MEMAR, Saptarshi DAS
  • Patent number: 9548394
    Abstract: A two-dimensional thin film transistor and a method for manufacturing a two-dimensional thin film transistor includes layering a semiconducting channel material on a substrate, providing a first electrode material on top of the semiconducting channel material, patterning a source metal electrode and a drain metal electrode at opposite ends of the semiconducting channel material from the first electrode material, opening a window between the source metal electrode and the drain metal electrode, removing the first electrode material from the window located above the semiconducting channel material providing a gate dielectric above the semiconducting channel material, and providing a top gate above the gate dielectric, the top gate formed from a second electrode material. The semiconducting channel material is made of tungsten diselenide, the first electrode material and the second electrode material are made of graphene, and the gate dielectric is made of hexagonal boron nitride.
    Type: Grant
    Filed: April 21, 2015
    Date of Patent: January 17, 2017
    Assignee: UChicago Argonne, LLC
    Inventors: Saptarshi Das, Anirudha V. Sumant, Andreas Roelofs
  • Publication number: 20160171862
    Abstract: A method and system for automatically generating dynamic virtual fences in a hazardous environment are provided. The method includes detecting a potential hazard associated with a field object in the hazardous environment. The method further includes determining a value of a risk factor of the potential hazard and area and shape of a dynamic virtual fence based on values of real-time operational parameters associated with the field object. The method includes automatically representing the dynamic virtual fence around a location of the field object on a map of the hazardous environment based on the determined area and shape and the value of the risk factor such that the dynamic virtual fence represents a hazardous zone in the hazardous environment.
    Type: Application
    Filed: December 14, 2015
    Publication date: June 16, 2016
    Inventors: Saptarshi Das, Siddharth Das, Karthik Ragunathan
  • Patent number: 9336445
    Abstract: A method for occupancy location includes capturing a spatially coded image of a scene, identifying a region of interest in the image, generating a pixel plausibility index for each image pixel in the region of interest, and classifying pixels as relating to occupancy responsive to the pixel plausibility index.
    Type: Grant
    Filed: May 22, 2014
    Date of Patent: May 10, 2016
    Assignee: OSRAM GmbH
    Inventor: Saptarshi Das
  • Publication number: 20160003652
    Abstract: A system and a method of estimating a time of flight of a signal are provided. The method includes transmitting a plurality of signals from a plurality of transmitters such that the plurality of signals travel different paths. The method also includes receiving the plurality of signals at one or more receivers. The plurality of signals are transmitted such that the plurality of signals are received at a same time instance. The method includes estimating the time of flight of a respective signal of the plurality of signals as a function of a time of reception of the plurality of signals and a respective time instance of transmission of the respective signal of the plurality of signals. The transmissions of the plurality of signals are triggered at different time instances.
    Type: Application
    Filed: February 7, 2014
    Publication date: January 7, 2016
    Inventors: Varun A V, Saptarshi Das
  • Patent number: 9190135
    Abstract: Illustrative embodiments provide a FETRAM that is significantly improved over the operation of conventional FeRAM technology. In accordance with at least one disclosed embodiment, a CMOS-processing compatible memory cell provides an architecture enabling a non-destructive read out operation using organic ferroelectric PVDF-TrFE as the memory storage unit and silicon nanowire as the memory read out unit.
    Type: Grant
    Filed: August 3, 2012
    Date of Patent: November 17, 2015
    Assignee: PURDUE RESEARCH FOUNDATION
    Inventors: Joerg Appenzeller, Saptarshi Das
  • Publication number: 20150316426
    Abstract: A method for measuring a vehicle moving on a roadway, in particular a bridge, by means of at least one sensor measuring the deformation under load of the roadway includes recording the time curve of the sensor-measured value while the vehicle moves past the sensor; repeating a minimization, in which a measure of the deviation from the recorded curve by a parametrized reference function comprising a sum of a number of rational functions is minimized by adapting the parameters thereof, wherein a different number is used in every repetition and, in fact, as often as necessary until the deviation measure falls below a limit value, and then selecting the reference function associated with this deviation measure as the selected reference function; and determining the number of rational functions of the selected reference function as the number of axles of the vehicle.
    Type: Application
    Filed: December 11, 2013
    Publication date: November 5, 2015
    Inventors: Hans Georg Feichtinger, Mario Hampejs, Saptarshi Das
  • Publication number: 20150303315
    Abstract: A two-dimensional thin film transistor and a method for manufacturing a two-dimensional thin film transistor includes layering a semiconducting channel material on a substrate, providing a first electrode material on top of the semiconducting channel material, patterning a source metal electrode and a drain metal electrode at opposite ends of the semiconducting channel material from the first electrode material, opening a window between the source metal electrode and the drain metal electrode, removing the first electrode material from the window located above the semiconducting channel material providing a gate dielectric above the semiconducting channel material, and providing a top gate above the gate dielectric, the top gate formed from a second electrode material. The semiconducting channel material is made of tungsten diselenide, the first electrode material and the second electrode material are made of graphene, and the gate dielectric is made of hexagonal boron nitride.
    Type: Application
    Filed: April 21, 2015
    Publication date: October 22, 2015
    Applicant: UCHICAGO ARGONNE, LLC
    Inventors: Saptarshi Das, Anirudha V. Suman, Andreas Roelofs
  • Publication number: 20140348386
    Abstract: A method for occupancy location includes capturing a spatially coded image of a scene, identifying a region of interest in the image, generating a pixel plausibility index for each image pixel in the region of interest, and classifying pixels as relating to occupancy responsive to the pixel plausibility index.
    Type: Application
    Filed: May 22, 2014
    Publication date: November 27, 2014
    Applicant: OSRAM GmbH
    Inventor: Saptarshi DAS
  • Patent number: 8824534
    Abstract: The invention relates to a method of estimating BEM coefficients of the Channel taps of a transmission Channel of an OFDM System having a given pilot arrangement, comprising, at the receiver side of the transmission Channel, the Steps of a) subsampling a received OFDM symbol in the frequency domain into a set of subsequences, b) inverse Fourier transforming each subsequence into a transformed subsequence, and c) estimating Fourier coefficients of a truncated Fourier series expansion model of the Channel taps from the set of transformed subsequences.
    Type: Grant
    Filed: March 4, 2011
    Date of Patent: September 2, 2014
    Assignees: Universitat Wien, Technische Universitat Wien
    Inventors: Tomasz Hrycak, Saptarshi Das, Hans Georg Feichtinger, Gerald Matz
  • Patent number: 8824602
    Abstract: A method of equalizing an OFDM signal received over a transmission channel defined by a channel matrix includes: windowing the received signal in the time domain with at least two different tapers to obtain at least two tapered received signals; stacking the tapered received signals in the form of a joint matrix equation [ y 1 ? y ? ? y ? ] = [ D 1 ? D ? ? D ? ] ? y = [ D 1 ? D ? ? D ? ] ? ( Hx + ? ) with y being the received signal, ? being the number of tapers, D? being the ?th taper in form of a diagonal matrix, y? being the ?th tapered received signal, H being the channel matrix, x being the time domain transmitted signal, ? being optional noise; and solving said joint matrix equation for x as a least squares problem.
    Type: Grant
    Filed: January 10, 2013
    Date of Patent: September 2, 2014
    Assignee: University of Vienna
    Inventors: Saptarshi Das, Tomasz Hrycak
  • Patent number: 8755429
    Abstract: A method of equalizing a signal received over transmission channel defined by BEM coefficients of a basis expansion model of its channel taps, comprising the step of approximately solving the relation (I) for x[n] by an iterative method, n being the index of time, y[n] being the received signal, x[n] being the equalized signal, Bm[n] being the mth basis function of the basis expansion model, M being the model order of the basis expansion model, and blm being the BEM coefficient of the mth of the basis function of the lth channel tap, and w[n] being optional noise.
    Type: Grant
    Filed: March 4, 2011
    Date of Patent: June 17, 2014
    Assignees: Universitat Wien, Technische Universitat Wien
    Inventors: Tomasz Hrycak, Saptarshi Das, Hans Georg Feichtinger, Gerald Matz
  • Publication number: 20120327991
    Abstract: The invention relates to a method of estimating BEM coefficients of the Channel taps of a transmission Channel of an OFDM System having a given pilot arrangement, comprising, at the receiver side of the transmission Channel, the Steps of a) subsampling a received OFDM symbol in the frequency domain into a set of subsequences, b) inverse Fourier transforming each subsequence into a transformed subsequence, and c) estimating Fourier coefficients of a truncated Fourier series expansion model of the Channel taps from the set of transformed subsequences.
    Type: Application
    Filed: March 4, 2011
    Publication date: December 27, 2012
    Inventors: Tomasz Hrycak, Saptarshi Das, Hans Georg Feichtinger, Gerald Matz
  • Publication number: 20120327994
    Abstract: A method of equalizing a signal received over transmission channel defined by BEM coefficients of a basis expansion model of its channel taps, comprising the step of approximately solving the relation (I) for x[n] by an iterative method, n being the index of time, y[n] being the received signal, x[n] being the equalized signal, Bm[n] being the mth basis function of the basis expansion model, M being the model order of the basis expansion model, and blm, being the BEM coefficient of the mth of the basis function of the /th channel tap, and w[n] being optional noise.
    Type: Application
    Filed: March 4, 2011
    Publication date: December 27, 2012
    Inventors: Tomasz Hrycak, Saptarshi Das, Hans Georg Feichtinger, Gerald Matz
  • Publication number: 20120314476
    Abstract: Illustrative embodiments provide a FETRAM that is significantly improved over the operation of conventional FeRAM technology. In accordance with at least one disclosed embodiment, a CMOS-processing compatible memory cell (see definition above) provides an architecture enabling a non-destructive read out operation using organic ferroelectric PVDF-TrFE as the memory storage unit and silicon nanowire as the memory read out unit.
    Type: Application
    Filed: August 3, 2012
    Publication date: December 13, 2012
    Applicant: PURDUE RESEARCH FOUNDATION
    Inventors: Joerg APPENZELLER, Saptarshi DAS