Abstract: A method of fabricating a device comprises forming a multi-layer stack above a first substrate, where multi-layer stack includes a non-linear polar material. In at least one embodiment, method further includes forming a first conductive layer on multi-layer stack and annealing multi-layer stack. A transistor is formed above a second substrate. In at least one embodiment, method also includes forming a second conductive layer above electrode structure and bonding first conductive layer with second conductive layer. After bonding, method includes removing at least a portion of first substrate patterning multi-layer stack to form a memory device.

Abstract: A new class of logic gates are presented that use non-linear polar material. The logic gates include multi-input majority gates. Input signals in the form of digital signals are driven to non-linear input capacitors on their respective first terminals. The second terminals of the non-linear input capacitors are coupled a summing node which provides a majority function of the inputs. In the multi-input majority or minority gates, the non-linear charge response from the non-linear input capacitors results in output voltages close to or at rail-to-rail voltage levels. In some examples, the nodes of the non-linear input capacitors are conditioned once in a while to preserve function of the multi-input majority gates.

Abstract: A process integration and patterning flow used to pattern a memory array area for an embedded memory without perturbing a fabricating process for logic circuitries. The fabrication process uses a pocket mask (e.g., a hard mask) to decouple the etching process of a memory array area and non-memory area. Such decoupling allows for a simpler fabrication process with little to no impact on the current fabrication process. The fabrication process may use multiple pocket masks to decouple the etching process of the memory array area and the non-memory area. This fabrication process (using multiple pocket masks) allows to avoid exposure of memory material into a second pocket etch chamber. The process of etching memory material is decoupled from the process of etching an encapsulation material. Examples of embedded memory include dynamic random-access memory and ferroelectric random-access memory.

Abstract: Described is a packaging technology to improve performance of an AI processing system. An IC package is provided which comprises: a substrate; a first die on the substrate, and a second die stacked over the first die. The first die includes memory and the second die includes computational logic. The first die comprises a ferroelectric RAM (FeRAM) having bit-cells. Each bit-cell comprises an access transistor and a capacitor including ferroelectric material. The access transistor is coupled to the ferroelectric material. The FeRAM can be FeDRAM or FeSRAM. The memory of the first die may store input data and weight factors. The computational logic of the second die is coupled to the memory of the first die. The second die is an inference die that applies fixed weights for a trained model to an input data to generate an output. In one example, the second die is a training die that enables learning of the weights.

Abstract: A class of complex logic gates are presented that use non-linear polar material. The logic gates include multi-input majority gates. At least one input to an individual multi-input majority gate is a fixed input. Other inputs are driven to non-linear input capacitors on their respective first terminals. The second terminals of the non-linear input capacitors are coupled a summing node, which provides a majority function of the inputs. The summing node is coupled to a CMOS logic. Leakage through the capacitors is configured such that capacitors of a majority gate have substantially equal leakage, and this leakage has a I-V behavior which is symmetric. As such, reset device(s) on the summing node are not used. The non-linear charge response from the non-linear input capacitors results in output voltages close to or at rail-to-rail voltage levels, which reduces the high leakage problem faced from majority gates that use linear input capacitors.

Abstract: To compensate switching of a dielectric component of a non-linear polar material based capacitor, an explicit dielectric capacitor is added to a memory bit-cell and controlled by a signal opposite to the signal driven on a plate-line.

Abstract: The disclosed technology generally relates to ferroelectric materials and semiconductor devices, and more particularly to semiconductor memory devices incorporating doped polar materials. In one aspect, a semiconductor device comprises a capacitor which in turn comprises a polar layer comprising a base polar material doped with a dopant. The base polar material includes one or more metal elements and one or both of oxygen or nitrogen. The dopant comprises a metal element that is different from the one or more metal elements and is present at a concentration such that a ferroelectric switching voltage of the capacitor is different from that of the capacitor having the base polar material without being doped with the dopant by more than about 100 mV. The capacitor stack additionally comprises first and second crystalline conductive oxide electrodes on opposing sides of the polar layer.

Abstract: Approaches for integrating FE memory arrays into a processor, and the resulting structures are described. Simultaneous integrations of regions with ferroelectric (FE) cells and regions with standard interconnects are also described. FE cells include FE capacitors that include a FE stack of layers, which is encapsulated with a protection material. The protection material protects the FE stack of layers as structures for regular logic are fabricated in the same die.

Abstract: A configuration for efficiently placing a group of capacitors with one terminal connected to a common node is described. The capacitors are stacked and folded along the common node. In a stack and fold configuration, devices are stacked vertically (directly or with a horizontal offset) with one terminal of the devices being shared to a common node, and further the capacitors are placed along both sides of the common node. The common node is a point of fold. In one example, the devices are capacitors. N number of capacitors can be divided in L number of stack layers such that there are N/L capacitors in each stacked layer. The N/L capacitors are shorted together with an electrode (e.g., bottom electrode). The electrode can be metal, a conducting oxide, or a combination of a conducting oxide and a barrier material. The capacitors can be planar, non-planar or replaced by memory elements.

Abstract: The memory bit-cell formed using the ferroelectric capacitor results in a taller and narrower bit-cell compared to traditional memory bit-cells. As such, more bit-cells can be packed in a die resulting in a higher density memory that can operate at lower voltages than traditional memories while providing the much sought after non-volatility behavior. The pillar capacitor includes a plug that assists in fabricating a narrow pillar.

Abstract: Embodiments herein describe techniques for a semiconductor device including a RRAM memory cell. The RRAM memory cell includes a FinFET transistor and a RRAM storage cell. The FinFET transistor includes a fin structure on a substrate, where the fin structure includes a channel region, a source region, and a drain region. An epitaxial layer is around the source region or the drain region. A RRAM storage stack is wrapped around a surface of the epitaxial layer. The RRAM storage stack includes a resistive switching material layer in contact and wrapped around the surface of the epitaxial layer, and a contact electrode in contact and wrapped around a surface of the resistive switching material layer. The epitaxial layer, the resistive switching material layer, and the contact electrode form a RRAM storage cell. Other embodiments may be described and/or claimed.

Abstract: A computer-aided design (CAD) tool is provided for logic optimization and synthesis. The CAD tool executes a process that involves optimizing power, performance, and area (PPA) of a logic circuit by minimizing a number of CMOS gates, and majority and/or minority gates in the circuit and its depth. The CAD tool implements a methodology of optimizing logic synthesis based on a mix of standard cell libraries (such as AND, OR, NAND, NOR, XOR, Multiplexer, full adder, half adder, etc.) and varying input majority and minority gates (where the number of inputs in the minority and majority gates could vary as odd numbers from 3 and above). The standard cell libraries cells may contain minority and/or majority gates.

Abstract: To compensate switching of a dielectric component of a non-linear polar material based capacitor, an explicit dielectric capacitor is added to a memory bit-cell and controlled by a signal opposite to the signal driven on a plate-line.

Abstract: A class of complex logic gates are presented that use non-linear polar material. The logic gates include multi-input majority gates. At least one input to an individual multi-input majority gate is a fixed input. Other inputs are driven to non-linear input capacitors on their respective first terminals. The second terminals of the non-linear input capacitors are coupled a summing node, which provides a majority function of the inputs. The summing node is coupled to a CMOS logic. Leakage through the capacitors is configured such that capacitors of a majority gate have substantially equal leakage, and this leakage has a I-V behavior which is symmetric. As such, reset device(s) on the summing node are not used. The non-linear charge response from the non-linear input capacitors results in output voltages close to or at rail-to-rail voltage levels, which reduces the high leakage problem faced from majority gates that use linear input capacitors.

Abstract: A method for monetizing ferroelectric process development is described. In at least one embodiment, the method comprises procuring a target material based on a model driven selection which is based on charge, mass and magnetic moment, and/or mass of the atomic constituents of the target material. The method further comprises applying the target material to a fabrication process to build a ferroelectric device. The method further comprises generating a notification indicative of procurement of the target material and application of the target material. The method further comprises electronically transmitting the notification to a customer, wherein the notification includes an invoice having a line item associated with a cost of the procuring of the target material and application of the target material.

Abstract: Described are ferroelectric device film stacks which include a templating or texturing layer or material deposited below a ferroelectric layer, to enable a crystal lattice of the subsequently deposited ferroelectric layer to template off this templating layer and provide a large degree of preferential orientation despite the lack of epitaxial substrates.

Abstract: A new class of logic gates are presented that use non-linear polar material. The logic gates include multi-input majority gates. Input signals in the form of digital signals are driven to non-linear input capacitors on their respective first terminals. The second terminals of the non-linear input capacitors are coupled a summing node which provides a majority function of the inputs. The majority node is then coupled driver circuitry which can be any suitable logic gate such as a buffer, inverter, NAND gate, NOR gate, etc. In the multi-input majority or minority gates, the non-linear charge response from the non-linear input capacitors results in output voltages close to or at rail-to-rail voltage levels. Bringing the majority output close to rail-to-rail voltage eliminates the high leakage problem faced from majority gates formed using linear input capacitors.

Abstract: To compensate switching of a dielectric component of a non-linear polar material based capacitor, an explicit dielectric capacitor is added to a memory bit-cell and controlled by a signal opposite to the signal driven on a plate-line.

Abstract: A memory is provided which comprises a capacitor including non-linear polar material. The capacitor may have a first terminal coupled to a node (e.g., a storage node) and a second terminal coupled to a plate-line. The capacitors can be a planar capacitor or non-planar capacitor (also known as pillar capacitor). The memory includes a transistor coupled to the node and a bit-line, wherein the transistor is controllable by a word-line, wherein the plate-line is parallel to the bit-line. The memory includes a refresh circuitry to refresh charge on the capacitor periodically or at a predetermined time. The refresh circuit can utilize one or more of the endurance mechanisms. When the plate-line is parallel to the bit-line, a specific read and write scheme may be used to reduce the disturb voltage for unselected bit-cells. A different scheme is used when the plate-line is parallel to the word-line.

Abstract: An apparatus is described. The apparatus includes a compute-in-memory (CIM) circuit for implementing a neural network disposed on a semiconductor chip. The CIM circuit includes a mathematical computation circuit coupled to a memory array. The memory array includes an embedded dynamic random access memory (eDRAM) memory array. Another apparatus is described. The apparatus includes a compute-in-memory (CIM) circuit for implementing a neural network disposed on a semiconductor chip. The CIM circuit includes a mathematical computation circuit coupled to a memory array. The mathematical computation circuit includes a switched capacitor circuit. The switched capacitor circuit includes a back-end-of-line (BEOL) capacitor coupled to a thin film transistor within the metal/dielectric layers of the semiconductor chip. Another apparatus is described. The apparatus includes a compute-in-memory (CIM) circuit for implementing a neural network disposed on a semiconductor chip.