Abstract: Embodiments of the invention relate to increased energy efficiency and conservation by reducing and increasing an amount of cache available for use by a processor, and an amount of power supplied to the cache and to the processor, based on the amount of cache actually being used by the processor to process data. For example, a power control unit (PCU) may monitor a last level cache (LLC) to identify if the size or amount of the cache being used by a processor to process data and to determine heuristics based on that amount. Based on the monitored amount of cache being used and the heuristics, the PCU causes a corresponding decrease or increase in an amount of the cache available for use by the processor, and a corresponding decrease or increase in an amount of power supplied to the cache and to the processor.

Abstract: Embodiments of a memory cell comprising a voltage module configured to supply a first supply voltage and a second supply voltage, a data node programming module configured to receive the first supply voltage and to program a data node based at least in part on a write data line, and a complementary data node programming module configured to receive the second supply voltage and to program a complementary data node based at least in part on a complementary write data line, wherein the voltage module is configured such that the first supply voltage is substantially different from the second supply voltage for a period of time while the memory device is being programmed. Additional variants and embodiments may also be disclosed and claimed.

Abstract: Embodiments of a memory cell comprising a voltage module configured to supply a first supply voltage and a second supply voltage, a data node programming module configured to receive the first supply voltage and to program a data node based at least in part on a write data line, and a complementary data node programming module configured to receive the second supply voltage and to program a complementary data node based at least in part on a complementary write data line, wherein the voltage module is configured such that the first supply voltage is substantially different from the second supply voltage for a period of time while the memory device is being programmed. Additional variants and embodiments may also be disclosed and claimed.

Abstract: In some embodiments, an apparatus comprising a memory array of static random access memory (SRAM) cells arranged in a plurality of rows and a plurality of columns and configured to receive a clock signal having a plurality of clock cycles; a plurality of word-lines associated with the plurality of rows of the SRAM cells; and a selected word-line driver configured during an extended write operation to drive a selected one of the plurality of word-lines with a write word-line signal having an extended duration. Other embodiments may be described and claimed.

Abstract: The amount of data that may be transferred between a processing unit and a memory may be increased by transferring information during both the high and low phases of a clock. As one example, in a graphics processor using a general purpose register file as a memory and a mathematical box as a processing unit, the amount of data that can be transferred can be increased by transferring data during both the high and low phases of a clock.

Abstract: Embodiments of a memory cell comprising a voltage module configured to supply a first supply voltage and a second supply voltage, a data node programming module configured to receive the first supply voltage and to program a data node based at least in part on a write data line, and a complementary data node programming module configured to receive the second supply voltage and to program a complementary data node based at least in part on a complementary write data line, wherein the voltage module is configured such that the first supply voltage is substantially different from the second supply voltage for a period of time while the memory device is being programmed. Additional variants and embodiments may also be disclosed and claimed.

Abstract: A high-speed memory management technique that minimizes clobber in sequentially accessed memory, including but not limited to, for example, a trace cache. The method includes selecting a victim set from a sequentially accessed memory; selecting a victim way for the selected victim set; reading a next way pointer from a trace line of a trace currently stored in the selected victim way, if the selected victim way has the next way pointer; and writing a next line of the new trace into the selected victim way over the trace line of the currently stored trace. The method also includes forcing a replacement algorithm of next set to select a victim way of the next set using the next way pointer, if the trace line of the currently stored trace is not an active trace tail line.

Abstract: A high-speed memory management technique that minimizes clobber in sequentially accessed memory, including but not limited to, for example, a trace cache. The method includes selecting a victim set from a sequentially accessed memory; selecting a victim way for the selected victim set; reading a next way pointer from a trace line of a trace currently stored in the selected victim way, if the selected victim way has the next way pointer; and writing a next line of the new trace into the selected victim way over the trace line of the currently stored trace. The method also includes forcing a replacement algorithm of next set to select a victim way of the next set using the next way pointer, if the trace line of the currently stored trace is not an active trace tail line.