Abstract: A substrate illumination and inspection system provides for illuminating and inspecting a substrate particularly the substrate edge. The system a image processor to automatically detect and characterize defects on the wafer's edge.

Abstract: A substrate illumination and inspection system provides for illuminating and inspecting a substrate particularly the substrate edge. The system uses a light diffuser with a plurality of lights disposed at its exterior or interior for providing uniform diffuse illumination of a substrate. An optic and imaging system exterior of the light diffuser are used to inspect the plurality of surfaces of the substrate including specular surfaces. The optic can be rotated radially relative to a center point of the substrate edge to allow for focused inspection of all surfaces of the substrate edge.

Abstract: An edge area of the substrate processing device is disclosed. The edge area being processed is isolated from the remainder of the substrate by directing a flow of an inert gas through a plenum near the area to be processed thus forming a barrier while directing a flow of reactive species at an angle relative to the top surface of the substrate towards the substrate edge area thus processing the substrate edge area. A flow of oxygen containing gas into the processing chamber together with a negative exhaust pressure may contribute to the biasing of reactive species and other gases away from the non-processing areas of the substrate.

Abstract: A substrate illumination and inspection system provides for illuminating and inspecting a substrate particularly the substrate edge. The system uses a light diffuser with a plurality of lights disposed at its exterior or interior for providing uniform diffuse illumination of a substrate. An optic and imaging system exterior of the light diffuser are used to inspect the plurality of surfaces of the substrate including specular surfaces. The optic can be rotated radially relative to a center point of the substrate edge to allow for focused inspection of all surfaces of the substrate edge.

Abstract: An edge area of the substrate processing device is disclosed. The edge area being processed is isolated from the remainder of the substrate by directing a flow of an inert gas through a plenum near the area to be processed thus forming a barrier while directing a flow of reactive species at an angle relative to the top surface of the substrate towards the substrate edge area thus processing the substrate edge area. A flow of oxygen containing gas into the processing chamber together with a negative exhaust pressure may contribute to the biasing of reactive species and other gases away from the non-processing areas of the substrate. A clean ignition system is used to ignite the combustion flame.

Abstract: An edge area of the substrate processing device is disclosed. The edge area being processed is isolated from the remainder of the substrate by directing a flow of an inert gas through a plenum near the area to be processed thus forming a barrier while directing a flow of reactive species at an angle relative to the top surface of the substrate towards the substrate edge area thus processing the substrate edge area. A flow of oxygen containing gas into the processing chamber together with a negative exhaust pressure may contribute to the biasing of reactive species and other gases away from the non-processing areas of the substrate.

Abstract: A method and apparatus for dry chemical processing a wafer at atmospheric pressure is disclosed. The edge area of a substrate is placed in isolation from the remainder of the substrate. According to the present teachings, a method for centering a wafer on a rotatable chuck is provided. The method includes the steps of positioning a wafer adjacent to a micrometer. The wafer is then rotated and a plurality of wafer edge locations and rotational increments are measured. A center offset value for the value of the wafer center with respect to a chuck is calculated. The wafer is then moved with respect to a center position of the chuck.

Abstract: An edge area of the substrate processing device is disclosed. The edge area being processed is isolated from the remainder of the substrate by directing a flow of an inert gas through a plenum near the area to be processed thus forming a barrier while directing a flow of reactive species at an angle relative to the top surface of the substrate towards the substrate edge area thus processing the substrate edge area. A flow of oxygen containing gas into the processing chamber together with a negative exhaust pressure may contribute to the biasing of reactive species and other gases away from the non-processing areas of the substrate. A seal arrangement is provided for the processing chamber.