Abstract: Memory cells (MC) are formed at intersections of bit lines (BL) extending in the X direction and word lines (WL) extending in the Y direction. A plurality of basic array planes sharing the word lines (WL), each formed for a group of bit lines (BL) aligned in the Z direction, are arranged side by side in the Y direction. In each basic array plane, bit lines in even layers and bit lines in odd layers are individually connected in common. Each of selection switch elements (101 to 104) controls switching of electrical connection/non-connection between the common-connected even layer bit line and a global bit line (GBL), and each of selection switch elements (111 to 114) control switching of connection/non-connection between the common-connected odd layer bit line and the global bit line (GBL).

Abstract: A resistance variable element (10), a resistance variable memory apparatus, and a resistance variable apparatus, comprise a first electrode (2), a second electrode (4), and a resistance variable layer (3) which is disposed between the first electrode (2) and the second electrode (4) and is electrically connected to the first electrode (2) and to the second electrode (4), wherein the resistance variable layer (3) contains a material having a spinel structure which is expressed as a chemical formula of (NixFe1-x) Fe2O4, X being not smaller than 0.35 and not larger than 0.

Abstract: A resistance variable element of the present invention and a resistance variable memory apparatus using the resistance variable element are a resistance variable element (10) including a first electrode, a second electrode, and a resistance variable layer (3) provided between the first electrode (2) and the second electrode (4) to be electrically connected to the first electrode (2) and the second electrode (4), wherein the resistance variable layer (3) contains a material having a spinel structure represented by a chemical formula of (ZnxFe1-x)Fe2O4, and the resistance variable element (10) has a feature that an electrical resistance between the first electrode (2) and the second electrode (4) increases by applying a first voltage pulse to between the first electrode (2) and the second electrode (4), and the electrical resistance between the first electrode (2) and the second electrode (4) decreases by applying a second voltage pulse whose polarity is the same as the first voltage pulse to between the first

Abstract: A memory element comprises a first electrode, a second electrode, and a resistance variable film 2 which is disposed between the first and second electrodes to be connected to the first and second electrodes, a resistance value of the resistance variable film 2 varying based on voltage applied between the first and second electrodes, the resistance variable film 2 includes a layer 2a made of Fe3O4 and a layer 2b made of Fe2O3 or a spinel structure oxide which is expressed as MFe2O4 (M: metal element except for Fe); and the layer 2a made of Fe3O4 is thicker than the layer 2b made of Fe2O3 or the spinel structure oxide.

Abstract: A nonvolatile memory element comprises a first electrode layer (103), a second electrode (107), and a resistance variable layer (106) which is disposed between the first electrode layer (103) and the second electrode layer (107), a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes (103), (107), wherein the resistance variable layer (106) has a first region comprising a first oxygen-deficient tantalum oxide having a composition represented by TaOx (0<x<2.5) and a second region comprising a second oxygen-deficient tantalum oxide having a composition represented by TaOy (x<y<2.5), the first region and the second region being arranged in a thickness direction of the resistance variable layer.

Abstract: A nonvolatile memory apparatus comprises a first electrode (111), a second electrode (112), a variable resistance layer (113) which is disposed between the electrodes, a resistance value of the variable resistance layer reversibly varying between a plurality of resistance states based on an electric signal applied between the electrodes, a first terminal (103) connected to the first electrode, and a second terminal (104) connected to the second terminal. The variable resistance layer comprises at least a tantalum oxide, and is configured to satisfy 0<x<2.

Abstract: A nonvolatile memory element of the present invention comprises a first electrode (103), a second electrode (105), and a resistance variable layer (104) disposed between the first electrode (103) and the second electrode (104), a resistance value of the resistance variable layer varying reversibly according to an electric signal applied between the electrodes (103),(105), and the resistance variable layer (104) comprises at least a tantalum oxide, and is configured to satisfy 0<x<2.5 when the tantalum oxide is represented by TaOx.

Abstract: A polymer electrolyte fuel cell of the present invention includes a hydrogen ion-conductive polymer electrolyte membrane, an anode and a cathode sandwiching the hydrogen ion-conductive polymer electrolyte membrane, an anode-side conductive separator plate having a gas flow channel for supplying a fuel gas to the anode, and a cathode-side conductive separator plate having a gas flow channel for supplying an oxidant gas to the cathode.

Abstract: In a piezoelectric element, a cubic or tetragonal orientation control layer (15) is provided on a first electrode layer (14), and formed on the orientation control layer (15) is a piezoelectric layer (16) having a rhombohedral or tetragonal crystalline structure and made of lead zirconate titanate to which a Pb-containing complex perovskite compound expressed by the chemical formula Pb(AaBb)O3 has been added in an amount that is from 1 mol % to 50 mol %. The piezoelectric layer (16) is formed so that the crystal grains thereof become columnar grains which extend in the thickness direction of the piezoelectric layer (16) and in which the ratio of the average cross-sectional diameter to the length is from 1/50 to 1/14.

Abstract: A piezoelectric element includes a first electrode; a piezoelectric layered film composed of a first piezoelectric film formed on the first electrode film and a second piezoelectric film that is formed on the first piezoelectric film and is controlled in crystal orientation thereof by the first piezoelectric film; and a second electrode film formed on the second piezoelectric film. Each of the first and second piezoelectric films is an aggregate of columnar grains grown unidirectionally along a thickness direction of the piezoelectric layered film. A columnar grain of the second piezoelectric film has a larger cross-sectional diameter than a columnar grain of the first piezoelectric film. A ratio l/d of the thickness l of the piezoelectric layered film to the cross-sectional diameter d of the second piezoelectric film is not less than 20 and not more than 60.

Abstract: It is difficult to realize a small fuel cell capable of being installed in mobile device by merely downsizing a conventional fuel cell without changing the configuration. The present invention provides a small fuel cell employing a polymer electrolyte thin film, by using a semiconductor process. A polymer electrolyte thin film fuel cell in accordance with the present invention comprises: a substrate having a plurality of openings; an electrolyte membrane-electrode assembly formed on the substrate so as to cover each of the openings, the assembly comprising a first catalyst electrode layer, a hydrogen ion conductive polymer electrolyte membrane and a second catalyst electrode layer which are formed successively; and fuel and oxidant supply means for supplying a fuel or an oxidant gas to the first catalyst electrode layer through the openings, and an oxidant gas or a fuel to the second catalyst electrode layer.

Abstract: A mobile telephone and an external user interface processing device are connected to a communication network. The external user interface processing device stores a plurality of user interface programs. The mobile telephone transmits key operation event information to the external user interface processing device. The external user interface processing device executes a user interface program to produce a processing result of the key operation event information. The mobile telephone receives the processing result and controls the display according to the received processing result.

Abstract: To manufacture a compact and high-performance thin-film piezoelectric bimorph element at low cost, first and second piezoelectric thin films (2, 3) are formed by sputtering on the both surfaces of a metal thin plate (1) which are opposing relation to each other along the thickness thereof, while the respective states of polarizations of the first and second piezoelectric thin films (2, 3) are controlled. A pair of electrode films (5) are formed on the respective surfaces of the first and second piezoelectric thin films (2, 3) opposite to the metal thin plate (1).

Abstract: In a piezoelectric element, a cubic or tetragonal orientation control layer (15) is provided on a first electrode layer (14), and formed on the orientation control layer (15) is a piezoelectric layer (16) having a rhombohedral or tetragonal crystalline structure and made of lead zirconate titanate to which a Pb-containing complex perovskite compound expressed by the chemical formula Pb(AaBb)O3 has been added in an amount that is from 1 mol % to 50 mol %. The piezoelectric layer (16) is formed so that the crystal grains thereof become columnar grains which extend in the thickness direction of the piezoelectric layer (16) and in which the ratio of the average cross-sectional diameter to the length is from 1/50 to 1/14.

Abstract: A head support mechanism includes a head and a slider for carrying the head, the head being caused to track by main driver, wherein the head support mechanism further includes sub-driving device including a thin film and causing the head to have a micro-movement; and the sub-driving device causes the head to have a micro-movement by utilizing flexural deformation of the thin film.

Abstract: A piezoelectric element includes a first electrode; a piezoelectric layered film composed of a first piezoelectric film formed on the first electrode film and a second piezoelectric film that is formed on the first piezoelectric film and is controlled in crystal orientation thereof by the first piezoelectric film; and a second electrode film formed on the second piezoelectric film. Each of the first and second piezoelectric films is an aggregate of columnar grains grown unidirectionally along a thickness direction of the piezoelectric layered film. A columnar grain of the second piezoelectric film has a larger cross-sectional diameter than a columnar grain of the first piezoelectric film. A ratio l/d of the thickness l of the piezoelectric layered film to the cross-sectional diameter d of the second piezoelectric film is not less than 20 and not more than 60.

Abstract: A polymer electrolyte fuel cell comprises a separator plate having a gas channel for supplying an oxidant gas or a fuel gas to an electrode, said separator plate comprising a metal plate, a conductive film formed on the surface of the metal plate, and a diffused layer resulting from diffusion of a material of the conductive film formed between the metal plate and the conductive film. The fuel cell produces stable output free from corrosion or dissolution of the metal plate even in a long-term operation.

Abstract: A first electrode layer made of a noble metal containing at least one additive selected from the group consisting of Ti, Co, Ni, Mg, Fe, Ca, Sr, Mn, Ba and Al and oxides thereof, a pyroelectric layer having a thickness of 0.5 to 5 ?m and having a perovskite crystalline structure whose chemical composition is represented as (Pb(1-y)Lay)Ti(1-y/4)O3 (0<y?0.2) or (Pb(1-y)Lay)(ZrxTi(1-x))(1-y/4)O3 (0<x?0.2 or 0.55?x<0.8, 0<y?0.2), and a second electrode layer are formed in this order on a substrate, to obtain a pyroelectric device.

Abstract: An authentication system and method uses information on a position of a card as determined, for example, by detecting a position of a user's cell phone and the position of a card reader determined from card reader identification data. If the card is used in a card reader located near the user's cell phone, and the usual card authorizations are approved, it is determined that the card use is authorized. The position information thus serves as an additional level of security against a lost or stolen card.

Abstract: A crosslinking agent for water-absorbing resins which comprises (A) at least one halohydrin compound selected between (A1) a first halohydrin compound having per molecule at least two halohydrin groups (D) represented by the general formula (I), wherein R1 represents hydrogen or alkyl and X represents chlorine or bromine and (A2) a second halohydrin compound having per molecule at least two halohydrin groups (D) represented by the formula (I) and having per molecule at least one ammonium group (M) represented by the general formula (II), wherein R2's each independently represents a C1-4 hydrocarbon group or benzyl.