Abstract: An electric four-wheel drive vehicle and a control unit for the same, which can be applied to cars of class having larger displacements than the class to which the electric four-wheel drive vehicle equipped with the DC motor is applied, without increasing the cost over that of the known mechanical four-wheel drive vehicle. Front wheels of the vehicle are driven by an engine, and rear wheels are driven by an AC motor. A generator is driven by a rotating force of the engine to output DC power. An inverter converts the DC power outputted from the generator to AC power. A control unit controls the generator such that energy Pm required for driving the AC motor is outputted from the generator.

Abstract: An angle-torque sensor has: a torque detection coil that detects a change in state quantity in a mechanism to detect a relative angle made between input axis and output axis of a torsion bar to be twisted by a torque; an angle detection coil that detects a change in state quantity in a mechanism to detect a rotation angle of a reduction axis which rotates with a rotation being transmitted from the input axis or output axis and being reduced by a reduction mechanism; a torque detection circuit that detects the relative angle from the output of the torque detection coil; and an angle detection circuit that detects the rotation angle from the output of the angle detection coil.

Abstract: In an operation range of an actuator subjected to quick acceleration and deceleration, a motor drive apparatus, an electric actuator and an electric power steering apparatus capable of continuous torque control up to the high drive speed and high torque area. A controller comprises a voltage saturation detecting means for detecting the voltage saturation of the output voltage of an inverter circuit, based on the battery voltage, and a waveform controller that converts the drive waveform of the inverter circuit into the waveform created by superimposing harmonics of high odd-numbered order on a sinusoidal wave as a fundamental wave of the modulated wave modulated by a PWN carrier wave; and continuously changes the ratio of superimposing the high-order harmonics in response to the voltage saturation detected by a voltage saturation detecting means. This arrangement allows the controller to continuously change the drive waveform of the inverter circuit.

Abstract: A catheter for artificial insemination which is a hollow cylindrical catheter having open ends at both ends, the catheter comprising a small diameter portion forming a distal end portion, a large diameter portion forming a proximal end portion and a tapered portion connecting the small diameter portion and the large diameter portion, a total inner volume of the catheter being from 0.2 to 1.0 ml.

Abstract: An angle-torque sensor has: a torque detection coil that detects a change in state quantity in a mechanism to detect a relative angle made between input axis and output axis of a torsion bar to be twisted by a torque; an angle detection coil that detects a change in state quantity in a mechanism to detect a rotation angle of a reduction axis which rotates with a rotation being transmitted from the input axis or output axis and being reduced by a reduction mechanism; a torque detection circuit that detects the relative angle from the output of the torque detection coil; and an angle detection circuit that detects the rotation angle from the output of the angle detection coil.

Abstract: An angle-torque sensor has: a torque detection coil that detects a change in state quantity in a mechanism to detect a relative angle made between input axis and output axis of a torsion bar to be twisted by a torque; an angle detection coil that detects a change in state quantity in a mechanism to detect a rotation angle of a reduction axis which rotates with a rotation being transmitted from the input axis or output axis and being reduced by a reduction mechanism; a torque detection circuit that detects the relative angle from the output of the torque detection coil; and an angle detection circuit that detects the rotation angle from the output of the angle detection coil.

Abstract: A semiconductor device for a charge pump device suitable for providing large current capacity and preventing a latch up from occurring is offered. A first and a second N-type epitaxial silicon layers are stacked on a P-type single crystalline silicon substrate, and P-type well regions are formed in the second epitaxial silicon layer. P+-type buried layers abutting on bottoms of the P-type well regions and N+-type buried layers abutting on bottoms of the P+-type buried layers and electrically isolating the P-type well regions from the single crystalline silicon substrate are formed. An MOS transistor is formed in each of the P-type well regions and a drain layer of the MOS transistor and each of the P-type well regions are electrically connected.

Abstract: A synchronous motor controlling apparatus which can be applied to the carrier synchronized position estimating method as well and have protection-related functions such as detection of inverted magnetic pole position of a motor in a simple method, and an electric motor using the synchronous motor control apparatus. A controller controls a voltage applied to an AC motor with a PWM signal. A magnetic pole position detector of the controller detects a current of the AC motor to estimate a pole position of the AC motor. A fault detector detects a fault in the estimated magnetic position of the AC motor.

Abstract: In a charge pump device, occurrence of a latch up can be prevented and current capacity can be increased. An N-type epitaxial silicon layer is formed on a P-type single crystalline silicon substrate, P-type well regions are formed in the N-type epitaxial silicon layer separated from each other, and P-type lower isolation layers and P-type upper isolation layers are formed between the P-type well regions. Then a charge transfer MOS transistor is formed in each of the P-type well regions. The P-type single crystalline silicon substrate is biased to a ground potential or a negative potential.

Abstract: A semiconductor device for a charge pump device suitable for providing large current capacity and preventing a latch up from occurring is offered. An N-type epitaxial silicon layer is formed on a P-type single crystalline silicon substrate, and a P-type well region is formed in the N-type epitaxial silicon layer. A P+-type buried layer abutting on a bottom of the P-type well region and an N+-type buried layer partially overlapping with the P+-type buried layer and electrically isolating the P-type well region from the single crystalline silicon substrate are formed. And then, an MOS transistor is formed in the P-type well region.

Abstract: A latch up in a charge pump device is prevented as well as a withstand voltage of an MOS transistor used in the charge pump device is increased with this invention. A first and a second N-type epitaxial silicon layers are stacked on a P-type single crystalline silicon substrate, and P-type well regions are formed in the second epitaxial silicon layer separated from each other. A P-type isolation layer is formed between the P-type well regions. A P+-type buried layer is formed abutting on a bottom of each of the well regions, an N+-type buried layer is formed abutting on a bottom of the P+-type buried layer, and a transistor for charge transfer is formed in each of the P-type well regions.

Abstract: A semiconductor device for a charge pump device suitable for providing large current capacity and preventing a latch up from occurring is offered. A first and a second N-type epitaxial silicon layers are stacked on a P-type single crystalline silicon substrate, and a P-type well region is formed in the second epitaxial silicon layer. A P+-type buried layer is formed abutting on a bottom of the P-type well region, and an MOS transistor is formed in the P-type well region. The MOS transistor has a first source layer N+S of high impurity concentration, a first drain layer N+D of high impurity concentration and a second source layer N?S and/or a second drain layer N?D of low impurity concentration, which is diffused deeper than the first source layer N+S of high impurity concentration and the first drain layer N+D of high impurity concentration.

Abstract: There is disclosed a semiconductor device comprising at least one capacitive element group having a plurality of unit capacitive elements. At least one lead-out electrode for bottom electrodes of the unit capacitive elements of the capacitive element group is provided along a circumference going around top electrodes as a whole of the capacitive element group. The at least one lead-out electrode is provided so as to surround the top electrodes as a whole of the capacitive element group.

Abstract: In order to propose an inexpensive and highly precise motor controller, it is structured so as to detect the position of the rotor on the basis of the difference between the real current differential vector and the reference current differential vector, thereby control the motor without using a rotation position sensor.

Abstract: A semiconductor device for a charge pump device suitable for providing large current capacity and preventing a latch up from occurring is offered. An N-type epitaxial silicon layer is formed on a P-type single crystalline silicon substrate, and a P-type well region is formed in the N-type epitaxial silicon layer. A P+-type buried layer abutting on a bottom of the P-type well region and an N+-type buried layer partially overlapping with the P+-type buried layer and electrically isolating the P-type well region from the single crystalline silicon substrate are formed. And then, an MOS transistor is formed in the P-type well region.

Abstract: Compounds of formula (I): 1

Abstract: A provide a position-sensorless motor control apparatus comprises a salient-pole AC motor 2, a PWM inverter 3 for applying voltage to the AC motor 2, and a controller 1 for controlling the PWM inverter 3 by means of PWM signals, wherein the controller 1 has a position estimation means 11 which detects motor inductance in the pre-determined direction to the vector direction of the current that flows through the AC motor 2 and estimates the AC motor's rotor position based on the motor inductance.

Abstract: An angle-torque sensor has: a torque detection coil that detects a change in state quantity in a mechanism to detect a relative angle made between input axis and output axis of a torsion bar to be twisted by a torque; an angle detection coil that detects a change in state quantity in a mechanism to detect a rotation angle of a reduction axis which rotates with a rotation being transmitted from the input axis or output axis and being reduced by a reduction mechanism; a torque detection circuit that detects the relative angle from the output of the torque detection coil; and an angle detection circuit that detects the rotation angle from the output of the angle detection coil.

Abstract: A provide a position-sensorless motor control apparatus comprises a salient-pole AC motor 2, a PWM inverter 3 for applying voltage to the AC motor 2, and a controller 1 for controlling the PWM inverter 3 by means of PWM signals, wherein the controller 1 has a position estimation means 11 which detects motor inductance in the pre-determined direction to the vector direction of the current that flows through the AC motor 2 and estimates the AC motor's rotor position based on the motor inductance.

Abstract: In order to propose an inexpensive and highly precise motor controller, it is structured so as to detect the position of the rotor on the basis of the difference between the real current differential vector and the reference current differential vector, thereby control the motor without using a rotation position sensor.