Abstract: An outdoor unit includes a housing, a heat exchanger, an electric component box, a substrate, and a heat dissipator including multiple fins. The fins each have a first end situated in a windward side of an air passage formed between adjacent ones of the fins, and the first end faces the electric component box. When the heat dissipator and the electric component box are viewed from above, a first clearance gap having a first width and a second clearance gap having a second width greater than the first width are formed between the first end and the electric component box. The second clearance gap is situated closer to a back panel than the first clearance gap.

Abstract: A communication device may include: a memory configured to store management information in which, for each of a plurality of OIDs of a MIB, the OID and a setting value are associated with each other; and a controller, wherein the controller may be configured to: receive a setting command which conforms to TCP; write the setting value included in the setting command to the management information in association with the OID included in the setting command; and send a response command which conforms to the TCP. In a case where the setting command including a first OID and a first setting value is received, the controller may be configured to: write the first setting value to the management information in association with the first OID after the response command has been sent, and send the response command before the first setting value is written to the management information.

Abstract: A foreign substance collection apparatus includes: a frame body; a photosensitive drum; a cleaning roller which collects foreign substances from a surface of the photosensitive drum; a collecting roller which further collects the foreign substances having been collected by the cleaning roller from the cleaning roller; and a scraping member which scrapes off the foreign substances from the collecting roller. A foreign substance collecting portion included in the frame body has, in a posture during use: a first inner bottom surface which is positioned below the scraping member in a gravity direction; an outer bottom surface which is positioned further below the first inner bottom surface; and a connecting surface which intersects the first inner bottom surface and the outer bottom surface and which connects the first inner bottom surface and the outer bottom surface with each other.

Abstract: In an IPM rotor, a first core sheet has a first sheet hole forming a part of an accommodation hole. The first sheet hole has an edge portion having a flat spring portion which is bent by a magnet through insertion of the magnet into the accommodation hole. A pair of recesses forming a clearance with respect to the magnet are formed at both side portions of the flat spring portion of the edge portion of the first sheet hole. A size of the clearance is set based on a relationship between a magnitude of a pressing force of the flat spring portion on the magnet and variation in pressing force.

Abstract: This performance evaluation device comprises: an acquisition unit which acquires a sampling value of a gas turbine output and a sampling value of a steam turbine output, measured at each time during the operation of a combined cycle power generation plant that generates power using the gas turbine and the steam turbine; and an output calculation unit which obtains a plant output that is a total output of the sampling value of the gas turbine output measured at a first time and the sampling value of the steam turbine that is the steam turbine output corresponding to the gas turbine output at the first time and is measured at a second time after a predetermined delay from the first time.

Abstract: A sputtering target material contains one kind or two or more kinds selected from the group consisting of Ag, As, Pb, Sb, Bi, Cd, Sn, Ni, and Fe in a range of 5 massppm or more and 50 massppm or less, in terms of a total content; and a balance consisting of Cu and an inevitable impurity. In the sputtering target material, in a case in which an average crystal grain size calculated as an area average without twins is denoted by X1 (?m), and a maximum intensity of pole figure is denoted by X2, upon an observation with an electron backscatter diffraction method, Expression (1): 2500>19×X1+290×X2 is satisfied, a kernel average misorientation (KAM) of a crystal orientation measured by an electron backscatter diffraction method is 2.0° or less, and a relative density is 95% or more.

Abstract: A sputtering target material contains one kind or two or more kinds selected from the group consisting of Ag, As, Pb, Sb, Bi, Cd, Sn, Ni, and Fe in a range of 5 massppm or more and 50 massppm or less, in terms of a total content; and a balance consisting of Cu and an inevitable impurity. In the sputtering target material, in a case in which an average crystal grain size calculated as an area average without twins is denoted by X1 (?m), and a maximum intensity of pole figure is denoted by X2, upon an observation with an electron backscatter diffraction method, Expression (1): 2500>19×X1+290×X2 is satisfied, a kernel average misorientation (KAM) of a crystal orientation measured by an electron backscatter diffraction method is 2.0° or less, and a relative density is 95% or more.

Abstract: A high purity copper sputtering target material includes Cu at a purity of 99.99998 mass % or more excluding O, H, N and C, wherein an Al content is 0.005 mass ppm or less, a Si content is 0.05 mass ppm or less, an Fe content is 0.02 mass ppm or less, a S content is 0.03 mass ppm or less, Cl content is 0.1 mass ppm or less, n O content is 1 mass ppm or less, H content is 1 mass ppm or less, a N content is 1 mass ppm or less, and a C content is 1 mass ppm or less.

Abstract: A Cu—Ga alloy sputtering target of the present invention is made of a Cu—Ga alloy, in which a carbon concentration is 30 ppm by mass or lower. In an observed structure, an area ratio of crystal grains having a grain size of 10 ?m or less is 5% to 50% and an area ratio of crystal grains having a grain size of 100 ?m or more is 1% to 30%.

Abstract: A copper alloy sputtering target is formed by a copper alloy including the content of Ca being 0.3 to 1.7% by mass, the total content of Mg and Al being 5 ppm or less by mass, the content of oxygen being 20 ppm or less by mass, and the remainder is Cu and inevitable impurities. A manufacturing method of a copper alloy sputtering target comprises steps of: preparing a copper having purity of 99.99% or more by mass; melting the copper so as to obtain a molten copper; controlling components so as to obtain a molten metal having a predetermined component composition by the addition of Ca having a purity of 98.5% or more by mass into the molten copper and by melting the Ca; casting the molten metal so as to obtain an ingot; and performing stress relieving annealing after performing hot rolling to the ingot.

Abstract: An alarm display system includes: a database configured to store a plurality of sets of predetermined events, occurrence probabilities of the events, checking situations of the events, and countermeasure policies of the events in association with the sets; an alarm information acquisition unit configured to acquire alarm information indicating that the events occur in monitoring target devices; a support information addition unit configured to add support information for supporting determination of a countermeasure for the alarm information according to information stored in the database, to the acquired alarm information; and a display unit configured to display alarm display information in which the support information is added.

Abstract: A copper ingot of the present invention which is casted by a belt-caster type continuous casting apparatus includes: 1 ppm by mass or less of carbon; 10 ppm by mass or less of oxygen; 0.8 ppm by mass or less of hydrogen; 15 ppm by mass to 35 ppm by mass of phosphorus; and a balance of Cu and inevitable impurities, and includes inclusions formed of oxides containing carbon, phosphorus, and Cu.

Abstract: An alarm display system includes: a database configured to store a plurality of sets of predetermined events, occurrence probabilities of the events, checking situations of the events, and countermeasure policies of the events in association with the sets; an alarm information acquisition unit configured to acquire alarm information indicating that the events occur in monitoring target devices; a support information addition unit configured to add support information for supporting determination of a countermeasure for the alarm information according to information stored in the database, to the acquired alarm information; and a display unit configured to display alarm display information in which the support information is added.

Abstract: A sputtering target for forming protective film which is used to form a protective film on one surface or both surfaces of a Cu wiring film contains Ni: 5.0 to 15.0% by mass, Mn: 2.0 to 10.0% by mass, Zn: 30.0 to 50.0% by mass, Al: 0.5 to 7.0% by mass, and a remainder composed of Cu and inevitable impurities. A laminated wiring film is provided with a Cu wiring film and the protective film formed on one surface or both surfaces of the Cu wiring film, and the protective film is formed by the above-described sputtering target for forming protective film.

Abstract: A sputtering target is provided for forming a protective film which is used for forming a protective film on a single surface or both surfaces of a Cu wiring film, the sputtering target including 5 to 15 mass % of Ni or Ni and Al in total (where the Ni content is 0.5 mass % or higher); 0.1 to 5.0 mass % of Mn; 0.5 to 7.0 mass % of Fe; and a balance including Cu and inevitable impurities.

Abstract: Provided are a sputtering target composed of a Cu—Ga sintered compact that has a further reduced oxygen content and can suppress abnormal discharges, and a method for producing the same. The sintered compact has a component composition containing a Ga content of 20 at % or higher and less than 30 at % with the balance being Cu and inevitable impurities, and has an oxygen content of 100 ppm or lower and an average grain size of 100 ?m or less, and exhibits the diffraction peaks assigned to the ? and ? phases of CuGa as observed in X-ray diffraction, wherein the main peak intensity of the diffraction peaks assigned to the ? phase is 10% or higher relative to that of the diffraction peaks assigned to the ? phase.

Abstract: Provided is a method of manufacturing a Cu—Ga alloy sputtering target made of a Cu—Ga alloy with a hollow portion, the method including: a calcining step of forming a calcined material by charging a raw material powder that includes at least a Cu—Ga alloy powder into a mold that includes a core and heating the raw material powder in a reducing atmosphere; and a main sintering step of forming a sintered material by removing the core from the calcined material and heating the calcined material in a reducing atmosphere, in which the core used in the calcining step is made of a material having a higher linear thermal expansion coefficient than a Cu—Ga alloy constituting the Cu—Ga alloy sputtering target, and the calcined material is formed by holding the raw material powder at a temperature of 100-600° C. for 10 minutes to 10 hours in the calcining step.

Abstract: A copper alloy sputtering target is formed by a copper alloy including the content of Ca being 0.3 to 1.7% by mass, the total content of Mg and Al being 5 ppm or less by mass, the content of oxygen being 20 ppm or less by mass, and the remainder is Cu and inevitable impurities. A manufacturing method of a copper alloy sputtering target comprises steps of: preparing a copper having purity of 99.99% or more by mass; melting the copper so as to obtain a molten copper; controlling components so as to obtain a molten metal having a predetermined component composition by the addition of Ca having a purity of 98.5% or more by mass into the molten copper and by melting the Ca; casting the molten metal so as to obtain an ingot; and performing stress relieving annealing after performing hot rolling to the ingot.

Abstract: A high purity copper sputtering target material includes Cu at a purity of 99.99998 mass % or more excluding O, H, N and C, wherein an Al content is 0.005 mass ppm or less, a Si content is 0.05 mass ppm or less, an Fe content is 0.02 mass ppm or less, a S content is 0.03 mass ppm or less, Cl content is 0.1 mass ppm or less, n O content is 1 mass ppm or less, H content is 1 mass ppm or less, a N content is 1 mass ppm or less, and a C content is 1 mass ppm or less.

Abstract: The present invention provides a sputtering target of a Cu—Ga sintered body in which the oxygen content is further reduced and the abnormal discharging can be suppressed, and a method for producing the same. The sputtering target according to the present invention is a sintered body having: a texture in which Na compound phases are dispersed in a matrix with a ? phase and a ? phase of a Cu—Ga alloy; and a component composition made of: 20 atomic % to 30 atomic % of Ga; 0.05 atomic % to 10 atomic % of Na; and the Cu balance and inevitable impurities including elements other than Na in the Na compound, wherein an average grain size of the ? phase is 30 ?m to 100 ?m, and an average grain size of the Na compound phases is equal to or less than 8.5 ?m.