Abstract: A Cu—Ga alloy sputtering target of the present invention is made of a Cu—Ga alloy, in which a carbon concentration is 30 ppm by mass or lower. In an observed structure, an area ratio of crystal grains having a grain size of 10 ?m or less is 5% to 50% and an area ratio of crystal grains having a grain size of 100 ?m or more is 1% to 30%.

Abstract: According to the present invention, a Cu—Ga alloy sputtering target which is a sintered body has a composition with 29.5 atom % to 43.0 atom % of Ga and a balance of Cu and inevitable impurities. A Cu—Ga alloy crystal particle in the sintered body has a structure in which ? phase particles are dispersed in a ?1-phase crystal particle. A method for producing the sputtering target includes a step of performing normal pressure sintering by heating a molded body formed of a powder mixture of a pure Cu powder and a Cu—Ga alloy powder in a reducing atmosphere, and a step of cooling the obtained sintered body at a cooling rate of 0.1° C./min to 1.0° C./min, at a temperature having a range of 450° C. to 650° C.

Abstract: A copper alloy sputtering target is formed by a copper alloy including the content of Ca being 0.3 to 1.7% by mass, the total content of Mg and Al being 5 ppm or less by mass, the content of oxygen being 20 ppm or less by mass, and the remainder is Cu and inevitable impurities. A manufacturing method of a copper alloy sputtering target comprises steps of: preparing a copper having purity of 99.99% or more by mass; melting the copper so as to obtain a molten copper; controlling components so as to obtain a molten metal having a predetermined component composition by the addition of Ca having a purity of 98.5% or more by mass into the molten copper and by melting the Ca; casting the molten metal so as to obtain an ingot; and performing stress relieving annealing after performing hot rolling to the ingot.

Abstract: According to the present invention, a Cu—Ga alloy sputtering target which is a sintered body has a composition with 29.5 atom % to 43.0 atom % of Ga and a balance of Cu and inevitable impurities. A Cu—Ga alloy crystal particle in the sintered body has a structure in which ? phase particles are dispersed in a ?1-phase crystal particle. A method for producing the sputtering target includes a step of performing normal pressure sintering by heating a molded body formed of a powder mixture of a pure Cu powder and a Cu—Ga alloy powder in a reducing atmosphere, and a step of cooling the obtained sintered body at a cooling rate of 0.1° C./min to 1.0° C./min, at a temperature having a range of 450° C. to 650° C.

Abstract: A sputtering target for forming protective film according to the invention is used to form protective film on one surface or both surfaces of a Cu wiring film, and includes 8.0 to 11.0% by mass of Al, 3.0 to 5.0% by mass of Fe, 0.5 to 2.0% by mass of Ni and 0.5 to 2.0% by mass of Mn with a remainder of Cu and inevitable impurities. In addition, a laminated wiring film includes a Cu wiring film and protective film formed on one surface or both surfaces of the Cu wiring film, and the protective film is formed by using the above sputtering target.

Abstract: A copper ingot of the present invention which is casted by a belt-caster type continuous casting apparatus includes: 1 ppm by mass or less of carbon; 10 ppm by mass or less of oxygen; 0.8 ppm by mass or less of hydrogen; 15 ppm by mass to 35 ppm by mass of phosphorus; and a balance of Cu and inevitable impurities, and includes inclusions formed of oxides containing carbon, phosphorus, and Cu.

Abstract: A copper alloy sputtering target is made of a copper alloy having a composition containing Ca in a range of 0.3 mass % to 1.7 mass % with a remainder of Cu and inevitable impurities, a Ca-segregated phase (10) in which Ca is segregated is dispersed in a matrix phase, and the Ca-segregated phase contains a Cu-dispersed phase (11) made of Cu.

Abstract: Provided are a sputtering target composed of a Cu—Ga sintered compact that has a further reduced oxygen content and can suppress abnormal discharges, and a method for producing the same. The sintered compact has a component composition containing a Ga content of 20 at % or higher and less than 30 at % with the balance being Cu and inevitable impurities, and has an oxygen content of 100 ppm or lower and an average grain size of 100 ?m or less, and exhibits the diffraction peaks assigned to the ? and ? phases of CuGa as observed in X-ray diffraction, wherein the main peak intensity of the diffraction peaks assigned to the ? phase is 10% or higher relative to that of the diffraction peaks assigned to the ? phase.

Abstract: The present invention provides a sputtering target of a Cu—Ga sintered body in which the oxygen content is further reduced and the abnormal discharging can be suppressed, and a method for producing the same. The sputtering target according to the present invention is a sintered body having: a texture in which Na compound phases are dispersed in a matrix with a ? phase and a ? phase of a Cu—Ga alloy; and a component composition made of: 20 atomic % to 30 atomic % of Ga; 0.05 atomic % to 10 atomic % of Na; and the Cu balance and inevitable impurities including elements other than Na in the Na compound, wherein an average grain size of the ? phase is 30 ?m to 100 ?m, and an average grain size of the Na compound phases is equal to or less than 8.5 ?m.

Abstract: A sputtering target is provided for forming a protective film which is used for forming a protective film on a single surface or both surfaces of a Cu wiring film, the sputtering target including 5 to 15 mass % of Ni or Ni and Al in total (where the Ni content is 0.5 mass % or higher); 0.1 to 5.0 mass % of Mn; 0.5 to 7.

Abstract: A copper alloy sputtering target is made of a copper alloy having a composition containing Ca in a range of 0.3 mass % to 1.7 mass % with a remainder of Cu and inevitable impurities, a Ca-segregated phase (10) in which Ca is segregated is dispersed in a matrix phase, and the Ca-segregated phase contains a Cu-dispersed phase (11) made of Cu.

Abstract: A copper alloy sputtering target is formed by a copper alloy including the content of Ca being 0.3 to 1.7% by mass, the total content of Mg and Al being 5 ppm or less by mass, the content of oxygen being 20 ppm or less by mass, and the remainder is Cu and inevitable impurities. A manufacturing method of a copper alloy sputtering target comprises steps of: preparing a copper having purity of 99.99% or more by mass; melting the copper so as to obtain a molten copper; controlling components so as to obtain a molten metal having a predetermined component composition by the addition of Ca having a purity of 98.5% or more by mass into the molten copper and by melting the Ca; casting the molten metal so as to obtain an ingot; and performing stress relieving annealing after performing hot rolling to the ingot.

Abstract: A sputtering target for forming protective film which is used to form a protective film on one surface or both surfaces of a Cu wiring film contains Ni: 5.0 to 15.0% by mass, Mn: 2.0 to 10.0% by mass, Zn: 30.0 to 50.0% by mass, Al: 0.5 to 7.0% by mass, and a remainder composed of Cu and inevitable impurities. A laminated wiring film is provided with a Cu wiring film and the protective film formed on one surface or both surfaces of the Cu wiring film, and the protective film is formed by the above-described sputtering target for forming protective film.

Abstract: A sputtering target for forming protective film according to the invention is used to form protective film on one surface or both surfaces of a Cu wiring film, and includes 8.0 to 11.0% by mass of Al, 3.0 to 5.0% by mass of Fe, 0.5 to 2.0% by mass of Ni and 0.5 to 2.0% by mass of Mn with a remainder of Cu and inevitable impurities. In addition, a laminated wiring film includes a Cu wiring film and protective film formed on one surface or both surfaces of the Cu wiring film, and the protective film is formed by using the above sputtering target.

Abstract: A method of forming a thin film interconnect in which a film is formed by sputtering method using a Cu—Ca alloy target and a thin film interconnect formed by the method, the method comprising: forming a Cu—Ca alloy film by sputtering method using a Cu—Ca alloy target that contains 0.5 atomic % or more and less than 5 atomic % of Ca, and the balance consisting of Cu and unavoidable impurities; and performing heat treatment of the Cu—Ca alloy film at a temperature of 300 to 700° C. in an inert gas atmosphere containing trace amount of oxygen defined by oxygen partial pressure in the range of 10?4 to 10?10 atm.

Abstract: This Cu alloy sputtering target includes, in terms of atomic percent: Al: 1% to 10%; and Ca: 0.1% to 2%, with the balance being Cu and 1% or less of inevitable impurities. This thin film transistor includes: a gate electrode layer joined to the surface of a glass substrate through an adhesion layer; a gate insulating layer; a Si semiconductor layer; an n-type Si semiconductor layer; a barrier layer; a wire layer composed of a drain electrode layer and a source electrode layer, both of which are mutually divided; a passivation layer; and a transparent electrode layer, wherein the barrier layer is formed by sputtering under an oxidizing atmosphere using the Cu alloy sputtering target.

Abstract: This thin-film transistor includes a drain electrode film and a source electrode film, each of which includes a composite copper alloy film including a copper alloy underlayer that is formed so as to come into contact with a barrier film and a Cu layer that is formed on the copper alloy underlayer. One aspect of the copper alloy underlayer includes a concentrated layer including 2 mol % to 30 mol % of Ca, 20 mol % to 50 mol % of oxygen, and Cu and inevitable impurities as the balance. Another aspect of the copper alloy underlayer includes a concentrated layer including 2 mol % to 30 mol % of Ca, 1 mol % to 10 mol % in total of one or more selected from the group consisting of Al, Sn, and Sb, 20 mol % to 50 mol % of oxygen, and Cu and inevitable impurities as the balance.

Abstract: This thin-film transistor includes adhesive strength enhancing films between a barrier film and electrode films. Each of the adhesive strength enhancing film is composed of two zones including (a) a pure copper zone that is formed on the electrode film side, and (b) a component concentrated zone that is formed in an interface portion contact with the barrier film, and that includes Cu, Ca, oxygen, and Si as constituents. In concentration distributions of Ca and oxygen in a thickness direction of the component concentrated zone, a maximum content of Ca of a Ca-containing peak is in a range of 5 to 20 at %, and a maximum content of oxygen of an oxygen-containing peak is in a range of 30 to 50 at %, respectively.

Abstract: To provide a means capable easily releasing twist of two or more guidewires passed through a guiding catheter without pulling out the guidewires. A twist releasing apparatus has a shaft, a first tube formed at the tip of the shaft and has a first lumen through which two or more guidewires can be passed, a second tube disposed through a gap at the tip side in the axis direction relative to the first tube and has a second lumen through the two or more guidewires can be passed, and a connection portion for connecting the first tube and the second tube so that the two or more guidewires can be passed through the first lumen and the second lumen. The second tube has a slit that is formed in an axis direction and can be elastically deformed. The connection portion can be elastically deformed into a curved shape in the axis direction.

Abstract: This Cu alloy sputtering target includes, in terms of atomic percent: Al: 1% to 10%; and Ca: 0.1% to 2%, with the balance being Cu and 1% or less of inevitable impurities. This thin film transistor includes: a gate electrode layer joined to the surface of a glass substrate through an adhesion layer; a gate insulating layer; a Si semiconductor layer; an n-type Si semiconductor layer; a barrier layer; a wire layer composed of a drain electrode layer and a source electrode layer, both of which are mutually divided; a passivation layer; and a transparent electrode layer, wherein the barrier layer is formed by sputtering under an oxidizing atmosphere using the Cu alloy sputtering target.